BSC080N12LS G [INFINEON]
逻辑电平 OptiMOS™ 3 功率 MOSFET 特别适用于 充电、 适配器 和 电信等应用。该器件栅极电荷低，可降低开关损耗，而不影响导通损耗。逻辑电平 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。;
| 型号： | BSC080N12LS G |
| 厂家： | 
Infineon |
| 描述： | 逻辑电平 OptiMOS™ 3 功率 MOSFET 特别适用于 充电、 适配器 和 电信等应用。该器件栅极电荷低，可降低开关损耗，而不影响导通损耗。逻辑电平 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。 开关 栅 驱动 控制器 电信 微控制器 栅极 |
| 文件： | 总13页 (文件大小：1772K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC080N12LS
MOSFET
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
PG-TDSON-8
8
5
7
6
Features
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ150ꢀ°Cꢀoperatingꢀtemperature
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
6
7
5
4
8
Pin 1
2
3
3
2
4
1
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 5-8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1
Gate
Pin 4
Parameter
Value
120
8.0
99
Unit
Source
Pin 1-3
VDS
V
*1: Internal body diode
RDS(on),max
ID
mΩ
A
Qoss
79
nC
nC
QG(0V..10V)
79
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC080N12LS
PG-TDSON-8
080N12LS
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
99
77
12
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTA=25°C,RthJA=45°C/W1)
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
394
377
20
A
TA=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
156
W
TC=25ꢀ°C
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
RthJA
-
0.45
0.8
°C/W -
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
-
-
-
-
18
62
45
Thermal resistance, junction - ambient,
minimal footprint
Thermal resistance, juntion - ambient,
6 cm² cooling area2)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
120
1.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.85
2.4
VDS=VGS,ꢀID=112ꢀµA
-
-
0.01
1
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
6.5
7.8
8.0
9.5
VGS=10ꢀV,ꢀID=50ꢀA
VGS=4.5ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
0.85
120
-
-
Ω
-
Transconductance
60
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
5600 7400 pF
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=60ꢀV,ꢀf=1ꢀMHz
590
28
770
42
pF
pF
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
11
9
-
-
-
-
ns
ns
ns
ns
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
37
13
VDD=60ꢀV,ꢀVGS=10ꢀV,ꢀID=25ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
17.5
12.9
20.1
79
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀID=25ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=60ꢀV,ꢀVGS=0ꢀV
Qgd
Qsw
Qg
Vplateau
Qoss
3.1
79
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
109
394
1.2
-
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.88
107
220
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=60ꢀV,ꢀIF=25ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
-
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
100
140
120
100
80
80
60
40
20
0
60
40
20
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
0.02
1 µs
0.05
0.1
0.2
10 µs
102
0.5
1 ms
100 µs
100
10-1
10-2
101
100
10-1
10-2
DC
10 ms
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
500
20.0
10 V
17.5
400
5 V
15.0
3 V
3.5 V
12.5
300
200
100
0
4 V
4.5 V
10.0
4.5 V
5 V
10 V
7.5
5.0
2.5
0.0
4 V
3.5 V
3 V
2.8 V
0
1
2
3
4
5
0
40
80
120
160
200
240
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
20.0
25 °C
350
300
250
200
150
100
50
17.5
15.0
12.5
10.0
150 °C
150 °C
7.5
25 °C
5.0
2.5
0.0
0
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
1120 µA
112 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
103
102
101
102
101
100
Coss
Crss
0
20
40
60
80
100
120
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
24 V
60 V
96 V
8
6
4
2
0
25 °C
101
100 °C
125 °C
100
10-1
100
101
102
103
0
10
20
30
40
50
60
70
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=25ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
131
129
127
125
123
121
119
117
115
113
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U08
MILLIMETERS
DIMENSIONS
MIN.
0.90
0.34
0.15
4.80
3.90
0.00
5.70
4.05
MAX.
1.20
0.54
0.35
5.35
4.40
0.22
6.10
4.25
A
b
c
D
D1
D2
E
E1
e
1.27
L
0.45
0.45
0.65
0.65
L1
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
Dimension in mm
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(TDSON-8)
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2022-11-09
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ120ꢀV
BSC080N12LS
RevisionꢀHistory
BSC080N12LS
Revision:ꢀ2022-11-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2019-11-25
2022-11-09
Release of final version
Bug fix, update outline drawing and footnotes
Trademarks
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2022-11-09
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BSC080P03LSGAUMA1
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