BSC096N10LS5 [INFINEON]
逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷，可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5（BSC096N10LS5）功率 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用;
| 型号： | BSC096N10LS5 |
| 厂家： | 
Infineon |
| 描述： | 逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷，可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5（BSC096N10LS5）功率 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用 开关 栅 驱动 控制器 电信 微控制器 栅极 |
| 文件： | 总12页 (文件大小：1085K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC096N10LS5
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀIdealꢀforꢀhigh-frequencyꢀswitching
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀOptimizedꢀforꢀchargers
4
3
1
2
2
3
1
4
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
100
9.6
72
Unit
VDS
V
RDS(on),max
ID
mΩ
A
Qoss
30
nC
nC
QG(0V..4.5V)
12
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC096N10LS5
PG-TDSON-8
096N10LS
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C1)
VGS=10ꢀV,ꢀTC=100ꢀ°C
-
-
-
-
-
-
72
51
14
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=25ꢀ°C,
RTHJA=50ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
287
45
A
TA=25ꢀ°C
-
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
20
-
-
-
-
-
83
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=50ꢀ°C/W3)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
1.1
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.8
°C/W -
°C/W -
Device on PCB,
-
-
50
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher Tcase please refer to Diagram 2. De-rating will be required based on the actual environmental
conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
1.1
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=36ꢀµA
1.7
2.3
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
8.0
10.3
9.6
12.5
VGS=10ꢀV,ꢀID=20ꢀA
VGS=4.5ꢀV,ꢀID=10ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.2
44
1.8
-
Ω
-
22
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
1600 2100 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
250
12
320
21
pF
pF
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
4.7
3.5
15
5
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=3ꢀΩ
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
4.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=50ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
2.6
-
4.1
6.1
Qsw
6.1
-
Gate charge total1)
Qg
12
14.6
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
3.0
-
19
-
nC
nC
30
40
VDS=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
76
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
287
1.1
60
A
TC=25ꢀ°C
Diode forward voltage
0.85
30
26
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
52
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
80
70
60
50
40
30
20
10
0
80
60
40
20
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
102
101
10 µs
100
10-1
10-2
100 µs
1 ms
10 ms
DC
100
10-1
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
25
10 V
5 V
140
2.8 V
3 V
4.5 V
20
15
10
5
3.5 V
120
100
80
60
40
20
0
4 V
4 V
4.5 V
5 V
10 V
3.5 V
3 V
2.8 V
0
0
1
2
3
4
5
0
10
20
30
40
50
60
70
80
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
25
140
120
100
80
20
15
10
25 °C
175 °C
175 °C
60
25 °C
40
5
20
0
0
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.4
2.0
1.6
1.2
0.8
0.4
0.0
2.0
1.6
1.2
0.8
0.4
0.0
360 µA
36 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
100
102
101
100
Coss
Crss
0
20
40
60
80
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
20 V
50 V
80 V
8
6
4
2
0
101
25 °C
100
100 °C
150 °C
10-1
100
101
102
103
0
4
8
12
16
20
24
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2019-09-02
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC096N10LS5
RevisionꢀHistory
BSC096N10LS5
Revision:ꢀ2019-09-02,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2019-04-02
2019-09-02
Update "Continuous drain current"
Trademarks
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productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2019-09-02
相关型号：
BSC098N10NS5
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
INFINEON
BSC0993NDATMA1
Power Field-Effect Transistor, 17A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON-8
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BSC100N03LSGATMA1
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC100N03MSGATMA1
Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC100N06LS3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
BSC100N06LS3GATMA1
Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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