BSC160N15NS5SC [INFINEON]
OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.;
| 型号： | BSC160N15NS5SC |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. |
| 文件： | 总11页 (文件大小：1079K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC160N15NS5SC
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
PG-WSON-8
Features
•ꢀDual-sideꢀcooledꢀpackageꢀwithꢀlowestꢀjunction-topꢀthermalꢀresistance
•ꢀN-channel,ꢀnormalꢀlevel
tab
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
5
6
7
8
4
3
2
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
Productꢀvalidation
Drain
Pin 5-8
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Gate
Pin 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
16
Unit
Source
Pin 1-3, tab
VDS
V
RDS(on),max
mΩ
A
ID
56
Qrr
26
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC160N15NS5SC
PG-WSON-8
160N15SC
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
56
40
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
Continuous drain current1)
ID
A
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
224
43
A
TC=25ꢀ°C
-
mJ
V
ID=45ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
20
-
Power dissipation
115
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.78
0.47
-
1.3
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
0.94
50
Thermal resistance, junction - ambient,
6 cm2 cooling area4)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=60ꢀµA
3.8
4.6
-
-
0.1
10
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
13.7
15.1
16
18.5
VGS=10ꢀV,ꢀID=28ꢀA,
VGS=8ꢀV,ꢀID=14ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.0
40
1.5
-
Ω
-
Transconductance
20
S
|VDS|>2|ID|RDS(on)max,ꢀID=28ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
1370 1820 pF
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
341
9.6
454
17
pF
pF
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=28ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
9.6
3
-
-
-
-
ns
ns
ns
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=28ꢀA,
RG,ext=3ꢀΩ
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=28ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
10.8
2.6
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=28ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
8
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=75ꢀV,ꢀID=28ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=28ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=28ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=28ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=28ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀVGS=0ꢀV
Qgd
4
5.9
-
Qsw
Qg
7.8
19
23.1
-
Vplateau
Qoss
5.8
51
68.2
nC
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
56
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
224
1.2
60
A
TC=25ꢀ°C
Diode forward voltage
0.88
30
26
V
VGS=0ꢀV,ꢀIF=28ꢀA,ꢀTj=25ꢀ°C
VR=75ꢀV,ꢀIF=28ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=75ꢀV,ꢀIF=28ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
52
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
120
60
100
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
10 µs
100
100 µs
1 ms
0.5
0.2
0.1
10-1
10 ms
0.05
100
10-1
10-2
0.02
0.01
DC
10-2
single pulse
10-3
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
240
40
10 V
35
30
200
9 V
160
8 V
6 V
25
7 V
120
20
8 V
10 V
15
10
5
7 V
80
40
6 V
5 V
5.5 V
0
0
0
1
2
3
4
5
0
20
40
60
80
100
120
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
150
100
125
100
75
80
60
40
20
0
50
25
175 °C
25 °C
0
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
120
140
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDS
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
5
2.0
1.6
1.2
0.8
0.4
0.0
600 µA
4
60 µA
3
2
1
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=28ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
103
102
101
100
102
101
100
Coss
Crss
0
25
50
75
100
125
150
0.00
0.40
0.80
1.20
1.60
2.00
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
120 V
8
6
4
2
0
75 V
30 V
25 °C
101
100 °C
150 °C
100
10-1
10-1
100
101
102
103
0.0
2.5
5.0
7.5
10.0 12.5 15.0 17.5 20.0
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=28ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
160
158
156
154
152
150
148
146
144
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00184589
MILLIMETERS
DIMENSION
REVISION
03
MIN.
MAX.
0.75
0.05
0.45
A
A1
b
-
-
SCALE 10:1
0.35
c
0.203
3.03
2mm
0
1
D
4.95
4.11
5.05
4.31
D1
D2
E
EUROPEAN PROJECTION
5.95
3.66
6.05
3.86
E1
E2
e
4.11
1.27
L1
L2
aaa
ddd
0.675
0.625
0.775
0.825
ISSUE DATE
03.06.2019
0.05
0.10
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC160N15NS5SC
RevisionꢀHistory
BSC160N15NS5SC
Revision:ꢀ2022-10-07,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update "Features"
2022-09-17
2022-10-07
Trademarks
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Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-10-07
相关型号：
BSC16DN25NS3 G
英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON
BSC16DN25NS3GATMA1
Power Field-Effect Transistor, 10.9A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC190N12NS3 G
120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实现卓越性能。120V OptiMOS™ 技术带来全新可能性，帮助实现优化解决方案。
INFINEON
BSC190N12NS3GATMA1
Power Field-Effect Transistor, 8.6A I(D), 120V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC190N15NS3 G
与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。
INFINEON
BSC190N15NS3GATMA1
Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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