BSC220N20NSFD [INFINEON]
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.;
| 型号： | BSC220N20NSFD |
| 厂家： | 
Infineon |
| 描述： | Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. |
| 文件： | 总11页 (文件大小：943K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC220N20NSFD
MOSFET
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
TSON-8-3
8
7
6
5
5
6
Features
7
8
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀ175ꢀ°Cꢀrated
Pin 1
2
4
3
3
2
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
4
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtestsꢀof
JEDEC47/20/22
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
200
22
Unit
6 D
5 D
VDS
V
RDS(on),max
ID
mΩ
A
52
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC220N20NSFD
TSON-8-3
220N20F
-
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
52
41
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
ID,pulse
EAS
-
-
-
-
208
214
A
TC=25ꢀ°C
Avalanche energy, single pulse
mJ
ID=38ꢀA,ꢀRGS=25ꢀΩ
ID=52ꢀA,ꢀVDS=100ꢀV,
di/dt=1500ꢀA/µs,ꢀTj,max=175ꢀ°C
Reverseꢀdiodeꢀpeakꢀdv/dt
dv/dt
-
-
60
kV/µs
Gate source voltage
Power dissipation
VGS
Ptot
-20
-
-
-
20
V
-
214
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tj=25 °C, unless otherwise specified
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
0.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
0.7
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
75
50
Thermal resistance, junction - ambient,
6 cm2 cooling area2)
RthJA
K/W
-
1) See Diagram 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
200
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3
4
VDS=VGS,ꢀID=137ꢀµA
-
-
0.1
10
1
100
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
IGSS
RDS(on)
RG
-
1
100
22
5.5
-
VGS=20ꢀV,ꢀVDS=0ꢀV
-
17.7
3.7
88
mΩ VGS=10ꢀV,ꢀID=52ꢀA
-
Ω
-
Transconductance
gfs
44
S
|VDS|>2|ID|RDS(on)max,ꢀID=52ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
2770 3680 pF
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
210
5.7
279
10
pF
pF
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=17ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
7
-
-
-
-
ns
ns
ns
ns
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=17ꢀA,
RG,ext=1.6ꢀΩ
7
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=17ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
28
10
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=17ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
13.1
4.4
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=100ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=52ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀVGS=0ꢀV
Qgd
7
Qsw
Qg
9.2
-
34
43
-
Vplateau
Qoss
4.7
84
111
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
52
Diode continous forward current
Diode pulse current1)
Diode hard commutation current2)
IS
-
-
-
-
-
A
A
A
V
TC=25ꢀ°C
IS,pulse
IS,hard
VSD
-
208
52
TC=25ꢀ°C
-
TC=25ꢀ°C,ꢀdiF/dt=1500ꢀA/µs
VGS=0ꢀV,ꢀIF=52ꢀA,ꢀTj=25ꢀ°C
Diode forward voltage
1.0
1.2
VR=100ꢀV,ꢀIF=12.5ꢀA,
diF/dt=100ꢀA/µs
Reverse recovery time3)
trr
-
-
89
-
-
ns
VR=100ꢀV,ꢀIF=12.5ꢀA,
diF/dt=100ꢀA/µs
Reverse recovery charge3)
Qrr
195
nC
1) Diode pulse current is defined by thermal and/or package limits
2) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
3) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
250
60
50
40
30
20
10
0
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS>=10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
100
10-1
10 µs
100 µs
1 ms
10 ms
100
0.5
0.2
DC
10-1
0.1
0.05
0.02
0.01
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
60
60
7 V
10 V
50
50
40
40
5 V
4.5 V
30
20
10
0
30
4.5 V
5 V
7 V
10 V
20
10
0
0
1
2
3
4
5
0
10
20
30
40
50
60
70
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
80
110
100
90
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
175 °C
25 °C
0
2
4
6
8
0
25
50
75
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
120
4.0
3.5
100
80
1370 µA
3.0
2.5
2.0
1.5
1.0
0.5
0.0
137 µA
60
40
98%
typ
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=55ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
175 °C
25°C, 98%
175°C, 98%
Ciss
103
102
101
102
101
100
Coss
Crss
100
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
8
6
160 V
25 °C
100 V
40 V
101
4
2
0
100 °C
150 °C
100
100
101
102
103
0
10
20
30
40
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=55ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
230
220
210
200
190
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00187559
MILLIMETERS
DIMENSION
REVISION
MIN.
MAX.
1.10
0.54
0.05
01
A
b
-
0.34
-
SCALE 10:1
b1
c
0.20
0
1
2mm
D
4.90
4.25
5.90
4.00
3.14
0.20
5.10
4.45
6.10
4.20
3.34
0.40
D1
E
EUROPEAN PROJECTION
E1
E2
E3
e
1.27
(0.37)
K2
L
0.60
0.43
0.80
0.63
ISSUE DATE
14.12.2017
L1
L2
(0.25)
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTSON-8-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2018-03-14
OptiMOSTM3ꢀPower-Transistor,ꢀ200ꢀV
BSC220N20NSFD
RevisionꢀHistory
BSC220N20NSFD
Revision:ꢀ2018-03-14,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2018-03-14
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
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documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2018-03-14
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