BSC500N20NS3 G [INFINEON]
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。;
| 型号： | BSC500N20NS3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。 电机 驱动 转换器 |
| 文件： | 总11页 (文件大小：1249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC500N20NS3ꢀG
MOSFET
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
PG-TDSON-8
8
5
7
6
Features
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
6
7
5
4
8
Pin 1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
2
3
3
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
2
4
1
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 5-8
Parameter
Value
200
50
Unit
VDS
V
*1
Gate
Pin 4
RDS(on),max
ID
mΩ
A
24
Source
Pin 1-3
*1: Internal body diode
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC500N20NS3 G
PG-TDSON-8
500N20NS
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
24
17
TC=25ꢀ°C
A
Continuous drain current
ID
TC=100ꢀ°C
Pulsed drain current1)
Avalanche energy, single pulse
Reverseꢀdiodeꢀdv/dt
ID,pulse
EAS
-
-
-
-
-
-
97
120
50
20
96
A
TC=25ꢀ°C
-
mJ
ID=22ꢀA,ꢀRGS=25ꢀΩ
dv/dt
VGS
-
kV/µs -
Gate source voltage
Power dissipation
-20
-
V
-
Ptot
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
1.3
K/W
K/W
-
-
Thermal resistance, junction - ambient,
minimal footprint
-
-
-
-
75
50
Thermal resistance, junction - ambient,
6 cm2 cooling area2)
RthJA
K/W
-
1) See figure 3
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
200
2
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=60ꢀµA
3
4
-
-
0.1
10
1
100
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=160ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
IDSS
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
IGSS
RDS(on)
RG
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
42
1.9
37
50
-
mΩ VGS=10ꢀV,ꢀID=22ꢀA
-
Ω
-
Transconductance
gfs
19
-
S
|VDS|>2|ID|RDS(on)max,ꢀID=22ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
1190 1580 pF
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=100ꢀV,ꢀf=1ꢀMHz
90
5
120
-
pF
pF
Reverse transfer capacitance
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=12ꢀA,
RG,ext=6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
14
5
-
-
-
-
ns
ns
ns
ns
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=12ꢀA,
RG,ext=6ꢀΩ
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=12ꢀA,
RG,ext=6ꢀΩ
Turn-off delay time
Fall time
28
7
VDD=100ꢀV,ꢀVGS=10ꢀV,ꢀID=12ꢀA,
RG,ext=6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
5
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=100ꢀV,ꢀID=12ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=12ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=12ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=12ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀID=12ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=100ꢀV,ꢀVGS=0ꢀV
Qgd
2
-
Qsw
Qg
4
-
15
4.4
35
20
-
Vplateau
Qoss
47
nC
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
24
97
1.2
-
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.9
110
399
V
VGS=0ꢀV,ꢀIF=22ꢀA,ꢀTj=25ꢀ°C
VR=100ꢀV,ꢀIF=12A,ꢀdiF/dt=100ꢀA/µs
VR=100ꢀV,ꢀIF=12A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
ns
nC
Qrr
-
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
30
80
60
40
20
0
20
10
0
0
50
100
150
200
0
50
100
150
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
100
10-1
100
10 µs
0.5
100 µs
1 ms
0.2
0.1
10 ms
0.05
10-1
0.02
0.01
DC
single pulse
10-2
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
60
80
10 V
4.5 V
70
60
50
40
30
20
10
0
50
5 V
7 V
40
7 V
10 V
5 V
30
20
10
0
4.5 V
0
1
2
3
4
5
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
40
80
70
60
50
40
30
20
10
0
30
20
10
150 °C
25 °C
0
0
2
4
6
8
0
25
50
75
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
140
4.0
3.5
120
100
600 µA
3.0
60 µA
2.5
80
98%
2.0
1.5
1.0
0.5
0.0
60
typ
40
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=22ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
25°C, 98%
150°C, 98%
Ciss
103
102
101
100
102
101
100
Coss
Crss
0
25
50
75
100
125
150
175
200
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
8
6
160 V
100 V
25 °C
40 V
101
100 °C
4
2
0
125 °C
100
100
101
102
103
0
4
8
12
16
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=12ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
230
220
210
200
190
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U08
MILLIMETERS
DIMENSIONS
MIN.
0.90
0.34
0.15
4.80
3.90
0.00
5.70
4.05
MAX.
1.20
0.54
0.35
5.35
4.40
0.22
6.10
4.25
A
b
c
D
D1
D2
E
E1
e
1.27
L
0.45
0.45
0.65
0.65
L1
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2023-05-31
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ200ꢀV
BSC500N20NS3ꢀG
RevisionꢀHistory
BSC500N20NS3 G
Revision:ꢀ2023-05-31,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update POD and footnotes
2.1
2023-05-31
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TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2023-05-31
相关型号：
BSC520N15NS3GATMA1
Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC520N15NS3GXT
Power Field-Effect Transistor, 21A I(D), 150V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC600N25NS3 G
英飞凌 250V OptiMOS™ 产品采用性能先进标杆技术，完全适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON
BSC882N03MSG
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC882N03MSGATMA1
Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC883N03LSG
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC883N03LSGATMA1
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC883N03MSG
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC883N03MSGATMA1
Power Field-Effect Transistor, 19A I(D), 34V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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