BSF110N06NT3GXUMA1 [INFINEON]
Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3;
| 型号： | BSF110N06NT3GXUMA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 11A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, CANPAK-3 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：784K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSF110N06NT3 G
OptiMOS™3 Power-MOSFET
Product Summary
Features
VDS
60
11
47
V
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
RDS(on),max
ID
mW
A
• Superior thermal resistance
CanPAK™ S
MG-WDSON-2
• Dual sided cooling
• Low parasitic inductance
• Low profile (<0.7mm)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Compatible with DirectFET® package ST footprint and outline2)
Type
Package
Outline
ST
Marking
0306
BSF110N06NT3 G
MG-WDSON-2
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
47
30
A
V GS=10 V, T A=25 °C,
R thJA=58 K/W3)
11
Pulsed drain current4)
I D,pulse
E AS
T C=25 °C
188
100
±20
Avalanche energy, single pulse5)
I D=30 A, R GS=25 W
mJ
V
V GS
Gate source voltage
1) J-STD20 and JESD22
2) DirectFET® is a trademark of International Rectifier Corporation
BSF110N06NT3 G uses DirectFET® technology licensed from International Rectifier Corporation
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4) See figure 3 for more detailed information
5) See figure 13 for more detailed information
Rev. 2.0
page 1
2012-07-05
BSF110N06NT3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
38
W
T A=25 °C,
R thJA=58 K/W3)
2.2
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-40 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
1.0
-
K/W
top
-
-
3.3
58
6 cm2 cooling area3)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=33 µA
Drain-source breakdown voltage
Gate threshold voltage
60
2
-
-
V
3
4
V DS=30 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
10
µA
V DS=60 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
-
-
-
10
8.6
0.5
100 nA
R DS(on) V GS=10 V, I D=30 A
11
-
mW
R G
W
|V DS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
23
46
-
S
Rev. 2.0
page 2
2012-07-05
BSF110N06NT3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
2800
800
22
11
2
3700 pF
1060
V GS=0 V, V DS=30 V,
f =1 MHz
C oss
Crss
t d(on)
t r
33
-
-
-
-
ns
V DD=30 V, V GS=10 V,
I D=30 A, R G=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
17
2
Gate Charge Characteristics6)
Gate to source charge
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
15
3
-
-
nC
Q gd
V DD=30 V, I D=30 A,
V GS=0 to 10 V
Q sw
Q g
9
-
Gate charge total
34
5.2
28
46
-
V plateau
Q oss
Gate plateau voltage
Output charge
V
V DD=30 V, V GS=0 V
37
nC
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
30
A
T C=25 °C
I S,pulse
120
V GS=0 V, I F=30 A,
T j=25 °C
V SD
Diode forward voltage
Reverse recovery time
Reverse recovery charge
-
-
-
0.9
41
56
1.2
V
t rr
-
-
ns
nC
V R=30 V, I F=I S,
di F/dt =400 A/µs
Q rr
6) See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2012-07-05
BSF110N06NT3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
35
30
25
20
15
10
5
60
50
40
30
20
10
0
0
0
40
80
120
160
0
25
50
75
100
125
150
175
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
101
100
10-1
10-2
0.5
100 µs
1
0.2
1 ms
0.1
10 ms
DC
0.05
0.02
0.01
0.1
single pulse
0.01
0.00001 0.0001
0.001
tp [s]
0.01
0.1
1
10-1
100
101
102
VDS [V]
Rev. 2.0
page 4
2012-07-05
BSF110N06NT3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
225
24
6 V
5 V 5.5 V
7 V
200
10 V
20
16
12
8
8 V
175
150
125
100
75
7 V
8 V
10 V
6 V
50
5.5 V
5 V
4
25
0
0
0
1
2
3
0
25 50 75 100 125 150 175 200 225
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
80
100
80
60
40
20
0
60
40
20
150 °C
25 °C
0
0
2
4
6
8
0
40
80
120
VGS [V]
ID [A]
Rev. 2.0
page 5
2012-07-05
BSF110N06NT3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
18
16
4
330 µA
14
3
2
1
0
max
12
33 µA
10
typ
8
6
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
100
Ciss
103
102
101
Coss
150°C 98%
10
150 °C
Crss
25 °C
25°C 98%
1
0
10
20
30
VDS [V]
40
50
60
0.0
0.5
1.0
1.5
2.0
VSD [V]
Rev. 2.0
page 6
2012-07-05
BSF110N06NT3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
30 V
12V
48 V
25 °C
10
6
100 °C
125 °C
4
2
1
0
1
10
100
1000
10000
0
8
16
24
32
40
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
66
64
62
60
58
56
54
V GS
Q g
V gs(th)
Q g(th)
Q sw
Q gd
Q gate
Q gs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.0
page 7
2012-07-05
BSF110N06NT3 G
Package Outline
CanPAK™ S
MG-WDSON-2
Rev. 2.0
page 8
2012-07-05
BSF110N06NT3 G
CanPAK™ S
MG-WDSON-2
Dimensions in mm
Rev. 2.0
page 9
2012-07-05
BSF110N06NT3 G
CanPAK™ S
MG-WDSON-2
Dimensions in mm
Recommended stencil thickness 150 mm
Rev. 2.0
page 10
2012-07-05
BSF110N06NT3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 11
2012-07-05
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