BSL211SPH6327XTSA1 [INFINEON]

Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TSOP-6;


型号：	BSL211SPH6327XTSA1
厂家：	Infineon
描述：	Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TSOP-6
文件：	总8页 (文件大小：348K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Rev 2.0

BSL211SP

OptiMOS -P Small-Signal-Transistor

Feature

Product Summary

-20

• P-Channel

mΩ

DS(on)

• Enhancement mode

• Super Logic Level (2.5 V rated)

• 150°C operating temperature

• Avalanche rated

-4.7

P-TSOP6-6

• dv/dt rated

• Pb-free lead plating; RoHS compliant

• Qualified according to AEC Q101

• Halogen free according to IEC61249221

Drain

pin 1,2,

5,6

Gate

pin 3

Type

Package

Tape and reel

Marking

Source

pin 4

BSL211SP

P-TSOP6-6

H6327: 3000pcs/r.

sPB

Maximum Ratings,at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

-4.7

-3.8

T =70°C

-18.8

Pulsed drain current

D puls

T =25°C

-6

Avalanche energy, single pulse

I =-4.7 A , V =-10V, R =25Ω

kV/µs

Reverse diode dv/dt

dv/dt

I =-4.7A, V =-16V, di/dt=200A/µs, T

DS jmax

=150°C

Gate source voltage

Power dissipation

±12

tot

T =25°C

°C

Operating and storage temperature

stg

-55... +150

55/150/56

IEC climatic category; DIN IEC 68-1

ESD Class

Class 0

JESD22-A114-HBM

Page 1

2014-01-09

Rev 2.0

BSL211SP

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

K/W

Thermal resistance, junction - soldering point

SMD version, device on PCB:

@ min. footprint

thJS

thJA

230

@ 6 cm cooling area ¹⁾

62.5

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

-20

typ. max.

Static Characteristics

Drain-source breakdown voltage

(BR)DSS

GS(th)

=0V, I =-250µA

-0.6

-0.9

-1.2

Gate threshold voltage, V = V

I =-25µA

µA

Zero gate voltage drain current

DSS

=-20V, V =0, T =25°C

-0.1

-10

-1

=-20V, V =0, T =150°C

-100

-100 nA

Gate-source leakage current

GSS

=-12V, V =0

110

Drain-source on-state resistance

mΩ

DS(on)

=-2.5V, I =-3.7A

Drain-source on-state resistance

DS(on)

=-4.5, I =-4.7A

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air; t≤ 5 sec.

Page 2

2014-01-09

Rev 2.0

Electrical Characteristics, at T = 25 °C, unless otherwise specified

BSL211SP

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

Dynamic Characteristics

çV ç≥2*çI ç*R

DS(on)max

6.2

12.4

Transconductance

I =-3.8A

=0, V =-15V,

654

241

197

8.7

Input capacitance

Output capacitance

f=1MHz

iss

oss

rss

Reverse transfer capacitance C

=-10V, V =-4.5V,

37.3

Turn-on delay time

Rise time

d(on)

I =-1A, R =6Ω

13.9

Turn-off delay time

Fall time

d(off)

23.3

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

=-10V, I =-4.7A

-1.3

-4.7

-8.3

-2

-7

=-10V, I =-4.7A,

-12.4

Gate charge total

=0 to -4.5V

=-10V, I =-4.7A

-2

Gate plateau voltage

(plateau)

Reverse Diode

T =25°C

-2

Inverse diode continuous

forward current

-18.8

-1.4

Inverse diode direct current,

pulsed

=0, |I | = |I |

-0.94

20.6

6.3

Inverse diode forward voltage V

V =-10V, |I | = |l |,

25.8 ns

7.9 nC

Reverse recovery time

di /dt=100A/µs

Reverse recovery charge

Page 3

2014-01-09

Rev 2.0

BSL211SP

1 Power dissipation

= f (T )

2 Drain current

I = f (T )

tot

parameter: |V |≥ 4.5 V

BSL211SP

2.2

-5.5

1.8

1.6

1.4

1.2

-4.5

-4

-3.5

-3

-2.5

-2

0.8

0.6

0.4

0.2

-1.5

-1

-0.5

80 100 120

160

80 100 120

160

°C

3 Safe operating area

I = f ( V

4 Transient thermal impedance

Z = f (t )

thJS

)

parameter : D = 0 , T = 25 °C

parameter : D = t /T

-10 ²

BSL211SP

10 ²

K/W

= 41.0µs

10 ¹

-10 ¹

100 µs

1 ms

10 ⁰

10 ^-1

10 ^-2

10 ms

-10 ⁰

-10 ^-1

-10 ^-2

D = 0.50

0.20

0.10

0.05

single pulse

0.02

10 ^-3

0.01

10 ^-4

-10 ^-1

-10 ⁰

-10 ¹

-10 ²

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

Page 4

2014-01-09

Rev 2.0

BSL211SP

5 Typ. output characteristic

I = f (V ); T =25°C

6 Typ. drain-source on resistance

= f (I )

DS(on)

parameter: t = 80 µs

parameter: V

0.2

Vgs = -3.5V

Vgs = -2.3V

Vgs = -2.5V

Vgs = -3V

Ω

Vgs = -3.5V

Vgs = -4V

Vgs = - 4V

0.15

0.125

0.1

Vgs = -4.5V

Vgs = -5.5V

Vgs = -7V

Vgs = - 4.5V

Vgs= - 5.5V

Vgs = - 7V

Vgs = -3V

0.075

0.05

0.025

Vgs = -2.5V

Vgs = -2.3V

Vgs = -2V

- V

- I

7 Typ. transfer characteristics

I = f ( V ); |V |≥ 2 x|I | x R

8 Typ. forward transconductance

g = f(I ); T =25°C

DS(on)max

parameter: t = 80 µs

0.4 0.8 1.2 1.6

2.4 2.8

3.6

- V

- I

Page 5

2014-01-09

Rev 2.0

BSL211SP

9 Drain-source on-resistance

= f(T )

10 Gate threshold voltage

V = f (T )

GS(th)

DS(on)

parameter: I = -4.7 A, V = -4.5 V

parameter: V = V , I = -25 µA

1.4

mΩ

98%

typ.

0.8

0.6

0.4

0.2

98%

typ.

°C

-60

-20

100

160

-60

-20

100

160

11 Typ. capacitances

C = f (V )

12 Forward character. of reverse diode

I = f (V )

parameter: V =0, f=1 MHz

parameter: T , tp = 80 µs

10 ³

-10 ²

BSL211SP

Ciss

-10 ¹

Coss

-10 ⁰

T_j= 25 °C typ

Crss

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

10 ²

-10 ^-1

-0.4 -0.8 -1.2 -1.6

-2

-2.4

-3

- V

Page 6

2014-01-09

Rev 2.0

BSL211SP

13 Typ. avalanche energy

14 Typ. gate charge

|V | = f (Q

= f (T ), par.: I = -4.7 A

)

Gate

= -10 V, R = 25 Ω

parameter: I = -4.7 A pulsed

0.2 VDS max.

0.5 VDS max.

0.8 VDS max.

°C

100

150

10 12 14

Gate

15 Drain-source breakdown voltage

= f (T )

(BR)DSS

BSL211SP

-24.5

-23.5

-23

-22.5

-22

-21.5

-21

-20.5

-20

-19.5

-19

-18.5

-18

-60

-20

100

180

°C

Page 7

2014-01-09

BSL211SP

BSS308P

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

page 8

2014-01-09

BSL211SPH6327XTSA1 [INFINEON]

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