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BSL606SNH6327XTSA1 [INFINEON]

Power Field-Effect Transistor,;

BSL606SNH6327XTSA1


元器件型号：	BSL606SNH6327XTSA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 局域网脉冲光电二极管晶体管
PDF文件：	总9页 (文件大小：450K)
下载文档：	下载PDF数据表文档文件
型号参数：BSL606SNH6327XTSA1参数

BSL802SN

OptiMOS™2 Small-Signal-Transistor

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31 INFINEON

BSL802SNH6327

Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

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0 INFINEON

BSL802SNH6327XTSA1

Small Signal Field-Effect Transistor, 7.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

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0 INFINEON

BSL806N

OptiMOS™2 Small-Signal-Transistor

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33 INFINEON

BSL806NH6327

Small Signal Field-Effect Transistor

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0 INFINEON

BSL806NH6327XTSA1

Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

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0 INFINEON

BSL806NL6327HTSA1

Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

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0 INFINEON

BSLGH

SIDE LEVER GUN+TUBE&CONNECTOR

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7 ETC

BSM05GD100D

TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 5A I(C)

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46 ETC

BSM100GAL100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 100A I(C)

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71 ETC

BSM100GAL120DLCK

IGBT-modules

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23 INFINEON

BSM100GAL120DN2

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

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121 INFINEON

BSM100GAL120DN2

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, HALF BRIDGE GAL 2, 7 PIN

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0 INFINEON

BSM100GB100D

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 100A I(C)

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149 ETC

BSM100GB100D

Insulated Gate Bipolar Transistor, 100A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-7

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4 INFINEON

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