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BSM141 [INFINEON]

Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4;

BSM141


元器件型号：	BSM141
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 60A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4 局域网开关脉冲晶体管
PDF文件：	总2页 (文件大小：249K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM141参数

BSM150GAL100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C)

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39 ETC

BSM150GAL120DLC

IGBT Module

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45 ETC

BSM150GAL120DN2

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

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58 INFINEON

BSM150GAL120DN2E3166

IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes)

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41 INFINEON

BSM150GAL120DN2E3166

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, POWER MODULE-7

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0 INFINEON

BSM150GAR120DN2

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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0 INFINEON

BSM150GAR120DN2HOSA1

Insulated Gate Bipolar Transistor, 210A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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0 INFINEON

BSM150GB100D

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)

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101 ETC

BSM150GB100D

暂无描述

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1 INFINEON

BSM150GB120D

TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)

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83 ETC

BSM150GB120DLC

Technische Information / Technical Information

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94 EUPEC

BSM150GB120DLC

62mm C-series module with low loss IGBT2 and EmCon diode

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33 INFINEON

BSM150GB120DLCHOSA1

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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0 INFINEON

BSM150GB120DN2

IGBT Power Module

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118 EUPEC

BSM150GB120DN2

IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)

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962 INFINEON

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