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BSM191/F [INFINEON]

Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4;

BSM191/F


元器件型号：	BSM191/F
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Power Field-Effect Transistor, 28A I(D), 1000V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMOPAC-4 局域网开关晶体管
PDF文件：	总2页 (文件大小：249K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM191/F参数

BSM191F

SIMOPAC Module (Power module Single switch FREDFET N channel Enhancement mode)

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20 INFINEON

BSM191F(C)

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 28A I(D)

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22 ETC

BSM200GA100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 200A I(C)

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50 ETC

BSM200GA100D

Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel, POWER MODULE-4

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0 INFINEON

BSM200GA120D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 200A I(C)

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120 ETC

BSM200GA120DLC

Technische Information / Technical Information

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80 EUPEC

BSM200GA120DLCS

Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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1 INFINEON

BSM200GA120DN2

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

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382 ETC

BSM200GA120DN2

IGBT Power Module

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106 EUPEC

BSM200GA120DN2S

IGBT Power Module

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27 EUPEC

BSM200GA120DN2S

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

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128 ETC

BSM200GA160D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 275A I(C)

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111 ETC

BSM200GA170DLC

IGBT Module

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55 ETC

BSM200GA170DLC

IGBT-Modules

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39 EUPEC

BSM200GA170DN2

IGBT Power Module

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35 EUPEC

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