BSO303SPNTMA1
更新时间：2024-09-18 18:02:32
品牌：INFINEON
描述：Power Field-Effect Transistor, 8.9A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
概述
规格参数
数据手册
替代型号BSO303SPNTMA1 概述
Power Field-Effect Transistor, 8.9A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 功率场效应晶体管
BSO303SPNTMA1 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.29.00.95 |
| 风险等级： | 5.72 | 其他特性： | AVALANCHE RATED,LOGIC LEVEL COMPATIBLE |
| 雪崩能效等级（Eas）： | 97 mJ | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 30 V | 最大漏极电流 (ID)： | 8.9 A |
| 最大漏源导通电阻： | 0.021 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PDSO-G8 | 元件数量： | 1 |
| 端子数量： | 8 | 工作模式： | ENHANCEMENT MODE |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | SMALL OUTLINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 最大脉冲漏极电流 (IDM)： | 35.6 A |
| 表面贴装： | YES | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
BSO303SPNTMA1 数据手册
通过下载BSO303SPNTMA1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Preliminary data
BSO303SP
OptiMOS -P Small-Signal-Transistor
Product Summary
Feature
V
-30
21
V
DS
• P-Channel
R
mΩ
A
DS(on)
• Enhancement mode
• Logic Level
I
-8.9
D
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
1
2
3
4
8
7
6
5
S
S
S
G
D
D
D
D
Top View
SIS00062
Type
Package
Ordering Code
BSO303SP
SO 8
Q67042-S4129
Maximum Ratings,at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
A
Continuous drain current
I
D
T =25°C
-8.9
-7.1
A
T =70°C
A
-35.6
Pulsed drain current
I
D puls
T =25°C
A
97
-6
mJ
Avalanche energy, single pulse
E
AS
I =-8.9 A , V =-25V, R =25Ω
D
DD
GS
kV/µs
Reverse diode dv/dt
dv/dt
I =-8.9A, V =-24V, di/dt=200A/µs, T
DS jmax
=150°C
S
V
Gate source voltage
Power dissipation
V
P
±20
GS
tot
2.35
W
T =25°C
A
°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +150
55/150/56
j
stg
Page 1
2002-01-08
Preliminary data
BSO303SP
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
35
K/W
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min footprint, t < 10s
R
thJS
R
thJA
-
-
-
-
110
53
2
@ 6 cm cooling area 1)
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
-30
-1
typ. max.
Static Characteristics
-
-
V
Drain-source breakdown voltage
V
V
(BR)DSS
GS(th)
V
=0, I =-250µA
D
GS
-1.5
-2
Gate threshold voltage, V = V
GS
DS
I =-100µA
D
µA
Zero gate voltage drain current
I
DSS
V
=-30V, V =0, T =25°C
GS
-
-
-
-0.1
-10
-10
-1
DS
j
V
=-30V, V =0, T =150°C
GS
-100
DS
j
-100 nA
Gate-source leakage current
I
GSS
V
=-20V, V =0
DS
GS
-
-
24
15
31
21
Drain-source on-state resistance
R
mΩ
DS(on)
V
=-4.5V, I =-7.3A
D
GS
Drain-source on-state resistance
R
DS(on)
V
=-10V, I =-8.9A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air; t≤10 sec.
Page 2
2002-01-08
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
BSO303SP
j
Parameter
Symbol
Conditions
Values
typ. max.
Unit
min.
Dynamic Characteristics
çV ç≥2*çI ç*R
DS(on)max
12
24
-
S
Transconductance
g
DS
D
fs
I =-7.1A
D
V
=0, V =-25V,
DS
-
-
-
-
-
-
-
1754
465
389
10.3
12.5
53
-
-
-
pF
Input capacitance
Output capacitance
C
GS
f=1MHz
iss
C
oss
rss
Reverse transfer capacitance C
V
=-15V, V =-10V,
GS
15.5 ns
19
Turn-on delay time
Rise time
t
d(on)
DD
I =-1A, R =6Ω
t
D
G
r
80
Turn-off delay time
Fall time
t
d(off)
40.3
60.5
t
f
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
V
=-24V, I =-8.9A
-
-
-
-4.1
-15.8
-46
-6.2 nC
-26
Q
Q
Q
DD
D
gs
gd
g
V
=-24V, I =-8.9A,
-69
Gate charge total
DD
D
V
=0 to -10V
GS
V
=-24V, I =-8.9A
-
-2.4
-
V
A
Gate plateau voltage
V
DD
D
(plateau)
Reverse Diode
T =25°C
-
-
-
-
-3.5
Inverse diode continuous
forward current
I
S
A
-35.6
Inverse diode direct current,
pulsed
I
SM
V
=0, |I | = |I |
-
-
-
-0.87 -1.09 V
Inverse diode forward voltage V
GS
F
D
SD
V =-15V, |I | = |l |,
R
25
37
ns
Reverse recovery time
t
rr
F
D
di /dt=100A/µs
11.7
17.6 nC
Reverse recovery charge
Q
rr
F
Page 3
2002-01-08
Preliminary data
BSO303SP
1 Power dissipation
= f (T )
2 Drain current
I = f (T )
P
tot
A
D
A
parameter: |V |≥ 10 V
GS
BSO303SP
BSO303SP
-10
2.6
W
A
2.2
2
-8
-7
-6
-5
-4
-3
-2
-1
0
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
°C
°C
T
T
A
A
3 Safe operating area
I = f ( V
4 Transient thermal impedance
= f (t )
)
DS
Z
D
thJS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
-10 2
BSO303SP
BSO303SP
10 2
K/W
t
= 76.0µs
100 µs
p
A
10 1
-10 1
1 ms
10 0
10 -1
10 -2
10 ms
-10 0
-10 -1
-10 -2
D = 0.50
0.20
0.10
0.05
0.02
DC
10 -3
0.01
single pulse
10 -4
-10 -1
-10 0
-10 1
-10 2
V
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
V
DS
t
p
Page 4
2002-01-08
Preliminary data
BSO303SP
5 Typ. output characteristic
I = f (V ); T =25°C
6 Typ. drain-source on resistance
= f (I )
R
D
DS
j
DS(on)
D
parameter: t = 80 µs
parameter: V
p
GS
0.1
30
Vgs = - 3V
Vgs = - 3.5V
Vgs = - 4V
Vgs = - 4.5V
Vgs= - 5V
Vgs = - 5.5V
Vgs = - 6V
Vgs = - 8V
Vgs = - 10V
Ω
Vgs= - 3.5V
A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
Vgs= - 4V
Vgs= - 4.5V
Vgs= - 5V
Vgs= - 6V
Vgs= - 10V
20
15
10
5
Vgs= -3V
Vgs= -2.5V
0
0
1
2
3
4
5
6
7.5
0
2
4
6
8
10 12 14 16
20
V
A
- V
- I
D
DS
7 Typ. transfer characteristics
8 Typ. forward transconductance
g = f(I ); T =25°C
I = f ( V ); |V |≥ 2 x |I | x R
D
GS
DS
D
DS(on)max
fs
D
j
parameter: t = 80 µs
parameter: t = 80 µs
p
p
40
40
A
S
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0.5
1
1.5
2
2.5
3
4
0
5
10
15
20
25
30
40
V
A
- V
- I
D
GS
Page 5
2002-01-08
Preliminary data
BSO303SP
9 Drain-source on-resistance
= f(T )
10 Typ. gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter: I = -8.9 A, V = -10 V
parameter: V = V
GS DS
D
GS
2.5
30
mΩ
max
typ
98%
25
22.5
20
1.5
1
typ.
min
17.5
15
0.5
0
12.5
10
°C
-60
-20
20
60
100
160
-60
-20
20
60
100
160
T
j
11 Typ. capacitances
C = f (V )
12 Forward character. of reverse diode
I = f (V )
DS
F
SD
parameter: V =0, f=1 MHz
parameter: T , tp = 80 µs
GS
j
10 4
-10 2
BSO303SP
A
pF
C
iss
-10 1
10 3
C
C
oss
rss
-10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 2
-10 -1
V
0
5
10
15
20
30
0
-0.4 -0.8 -1.2 -1.6
-2
-2.4
-3
V
- V
V
DS
SD
Page 6
2002-01-08
Preliminary data
BSO303SP
13 Typ. avalanche energy
14 Typ. gate charge
= f (Q
E
V
= f (T ), par.: I = -8.9 A
V
)
Gate
AS
DD
j
D
GS
= -25 V, R = 25 Ω
parameter: I = -8.9 A pulsed
GS
D
BSO303SP
100
-16
mJ
V
80
70
60
50
40
30
20
10
0
-12
-10
-8
-6
-4
-2
0
0.2 VDS max
0.5 VDS max
0.8 VDS max
nC
25
50
75
100
150
0
10
20
30
40
50
70
°C
T
|Q
|
j
Gate
15 Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BSO303SP
-36
V
-34
-33
-32
-31
-30
-29
-28
-27
-60
-20
20
60
100
180
°C
T
j
Page 7
2002-01-08
Preliminary data
BSO303SP
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 8
2002-01-08
BSO303SPNTMA1 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BSO303SPHXUMA1 | INFINEON | Power Field-Effect Transistor, 7.2A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Me | 功能相似 |
|
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