BSO613SPV G [INFINEON]
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.;
| 型号： | BSO613SPV G |
| 厂家： | 
Infineon |
| 描述： | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| 文件： | 总9页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSO613SPV G
SIPMOS Power-Transistor
Features
Product Summary
P-Channel
Drain source voltage
V
-60
0.13
-3.44
V
A
DS
Enhancement mode
Avalanche rated
dv/dt rated
Drain-source on-state resistance R
DS(on)
Continuous drain current
I
D
1
2
3
4
8
7
6
5
S
S
D
D
D
D
° Qualified according to AEC Q101
S
° Halogenfree according to IEC61249221
G
Top View
SIS00062
Type
Package
Lead free
BSO613SPV G
PG-SO 8
Yes
Maximum Ratings,at
T
= 25 °C, unless otherwise specified
j
Parameter
Symbol
Value
Unit
Continuous drain current
= 25 °C
I
D
-3.44
A
T
A
Pulsed drain current
I
-13.8
150
D puls
T = 25 °C
A
Avalanche energy, single pulse
E
E
mJ
AS
AR
I = -3.44 A , V = -25 V, R = 25
D
DD
GS
Avalanche energy, periodic limited by
Reverse diode d /d
= -3.44 A, = -48 V, di/dt = 200 A/µs,
T
0.25
6
jmax
v
t
d
v/d
t
kV/µs
I
V
S
DS
T
= 150 °C
jmax
Gate source voltage
Power dissipation
V
P
±20
2.5
V
GS
tot
W
T = 25 °C
A
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T , T
-55... +150
55/150/56
°C
j
stg
Rev.2.0
Page 1
20190730
BSO613SPV G
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
R
-
-
25
K/W
thJS
SMD version, device on PCB:
@ min. footprint; t 10 sec.
R
thJA
-
-
-
-
100
50
2
1)
@ 6 cm cooling area ; t 10 sec.
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
-60
max.
Static Characteristics
Drain- source breakdown voltage
V
V
-
-
V
(BR)DSS
GS(th)
V
= 0 V, I = -250 µA
D
GS
Gate threshold voltage, V = V
-2.1
-3
-4
GS
DS
I = 1 mA
D
Zero gate voltage drain current
I
µA
DSS
V
V
= -60 V, V = 0 V, T = 25 °C
-
-
-0.1
-10
-1
DS
DS
GS
j
= -60 V, V = 0 V, T = 125 °C
-100
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
-
-10
-100 nA
GSS
V
GS
DS
Drain-source on-state resistance
R
-
0.11
0.13
DS(on)
V
= -10 V, I = -3.44 A
D
GS
1
2
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.0
Page 2
2019-07-30
BSO613SPV G
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
2.2
4.4
700
235
95
-
S
fs
V
2*I *R
, I = -3.44 A
DS(on)max D
DS
D
Input capacitance
= 0 V, V = -25 V, f = 1 MHz
C
-
-
-
-
875 pF
295
iss
V
GS
DS
Output capacitance
= 0 V, V = -25 V, f = 1 MHz
C
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = -25 V, f = 1 MHz
C
120
rss
V
GS
DS
Turn-on delay time
= -30 V, V = -10 V, I = -3.44 A,
t
10
15
16.5
48
ns
d(on)
V
DD
GS
D
R = 2.7
G
Rise time
t
-
-
-
11
32
12
r
V
= -30 V, V = -10 V, I = -3.44 A,
GS D
DD
R = 2.7
G
Turn-off delay time
= -30 V, V = -10 V, I = -3.44 A,
t
d(off)
V
DD
GS
D
R = 2.7
G
Fall time
t
18
f
V
= -30 V, V = -10 V, I = -3.44 A,
GS D
DD
R = 2.7
G
Rev.2.0
Page 3
2019-07-30
BSO613SPV G
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Gate to source charge
Q
Q
-
-
-
-
1.6
10
2.4
15
30
-
nC
gs
V
= -48 V, I = -3.44 A
D
DD
Gate to drain charge
= -48 V, I = -3.44 A
gd
V
DD
D
Gate charge total
= -48 V, I = -3.44 A, V = 0 to -10 V
Q
20
g
V
DD
D
GS
Gate plateau voltage
= -48 V , I = -3.44 A
V
-3.74
V
(plateau)
V
DD
D
Parameter
Symbol
Values
typ.
Unit
min.
max.
-3.44
-13.8
Reverse Diode
Inverse diode continuous forward current
I
-
-
-
-
-
-
-
A
S
T = 25 °C
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
A
Inverse diode forward voltage
V
-0.87 -1.16
V
SD
V
= 0 V, I = -3.44 A
F
GS
Reverse recovery time
V = -30 V, I =I , di /dt = 100 A/µs
t
56
38
84
57
ns
nC
rr
R
F
S
F
Reverse recovery charge
Q
rr
V = -30 V, I =l , di /dt = 100 A/µs
R
F S
F
Rev.2.0
Page 4
2019-07-30
BSO613SPV G
Power Dissipation
Drain current
I = f (T )
P
= f (T )
A
tot
D
A
parameter: V
10 V
GS
BSO613SPV
BSO613SPV
-3.8
A
2.8
W
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
P
I
°C
°C
0
20
40
60
80 100 120
160
0
20
40
60
80 100 120
160
T
T
A
A
Safe operating area
I = f ( V
Transient thermal impedance
Z = f (t )
thJC
)
D
DS
p
parameter : D = 0 , T = 25 °C
parameter : D = t /T
A
p
BSO613SPV
BSO613SPV
-10 2
10 2
K/W
10 1
A
t
= 550.0µs
1 ms
p
I
-10 1
V
R
10 0
I
Z
10 ms
-10 0
-10 -1
-10 -2
D = 0.50
0.20
10 -1
0.10
0.05
0.02
single pulse
10 -2
0.01
DC
V
10 -3
-10 -1
-10 0
-10 1
-10 2
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
10 3
Rev.2.0
Page 5
2019-07-30
BSO613SPV G
Typ. output characteristic
I = f (V ); T =25°C
Typ. drain-source-on-resistance
= f (I )
D
DS
j
R
DS(on)
D
parameter: t = 80 µs
p
parameter: V
GS
BSO613SPV
BSO613SPV
-8.5
A
P
tot = 2.50W
0.42
b
c
d
e
f
j
V
[V]
GS
a
i
h
g
0.36
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-3.0
-3.5
-3.7
-4.0
-4.2
-4.5
-4.7
-5.0
-5.5
-10.0
-7.0
-6.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
b
c
d
e
f
f
I
R
g
h
i
e
d
b
j
g
c
a
h
i
j
V
[V] =
c
GS
b
d
e
f
g
h
i
j
-3.5 -3.7 -4.0 -4.2 -4.5 -4.7 -5.0 -5.5 -10.0
V
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
-5.0
DS
A
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-7.0
V
I
D
Typ. transfer characteristics I = f ( V
)
Typ. forward transconductance
g = f(I ); T =25°C
D
GS
V
2 x I x R
D DS(on)max
DS
fs
D
j
parameter: t = 80 µs
parameter: g
p
fs
-10
7
A
S
-8
-7
5
I
g
-6
4
-5
-4
-3
-2
-1
0
3
2
1
0
0
-1
-2
-3
-4
-6
0
-1 -2 -3 -4 -5 -6 -7 -8
-10
V
GS
Rev.2.0
Page 6
2019-07-30
BSO613SPV G
Drain-source on-state resistance
= f (T )
Gate threshold voltage
V = f (T )
GS(th)
R
DS(on)
j
j
parameter : I = -3.44 A, V = -10 V
parameter: V = V , I = 1 mA
GS DS D
D
GS
BSO613SPV
-5.0
0.34
V
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
98%
V
R
typ.
2%
98%
typ
°C
-60
-20
20
60
100
180
-60
-20
20
60
100
180
°C
T
T
j
j
Typ. capacitances
C = f (V )
Forward characteristics of reverse diode
I = f (V )
DS
F
SD
parameter: V =0V, f=1 MHz
parameter: T , tp = 80 µs
j
GS
BSO613SPV
10 4
-10 2
pF
A
10 3
-10 1
C
iss
I
C
C
C
oss
rss
10 2
-10 0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 1
-10 -1
0.0
V
0
-5
-10 -15 -20 -25 -30
-40
DS
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
-3.0
V
Rev.2.0
Page 7
2019-07-30
BSO613SPV G
Avalanche energy
= f (T )
Typ. gate charge
= f (Q
E
V
)
Gate
AS
j
GS
para.: I = -3.44 A , V = -25 V, R = 25
parameter: I = -3.44 A pulsed
D
DD
GS
D
BSO613SPV
160
-16
mJ
V
120
100
80
60
40
20
0
-12
-10
E
V
-8
V
V
DS max
0,2
0,8
DS max
-6
-4
-2
0
25
45
65
85
105
125
165
0
4
8
12
16
20
24
30
°C
nC
T
j
Q
Gate
Drain-source breakdown voltage
V
= f (T )
(BR)DSS
j
BSO613SPV
-72
V
-68
-66
-64
-62
-60
-58
-56
-54
V
°C
-60
-20
20
60
100
180
Rev.2.0
Page 8
2019-07-30
SIPMOSꢀPower-Transistor
BSO613SPV
RevisionꢀHistory
BSO613SPV
Revision:ꢀ2019-07-31,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-07-31
Trademarks
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Publishedꢀby
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81726ꢀMünchen,ꢀGermany
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(“Beschaffenheitsgarantie”)ꢀ.
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
9
Rev.ꢀ2.0,ꢀꢀ2019-07-31
相关型号：
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