首页 > BSP123L6327

BSP123L6327

更新时间：2024-09-18 14:22:32

品牌：INFINEON

描述：Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

PDF下载

中文翻译

PCB计价

概述
规格参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

BSP123L6327 概述

Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 MOS管功率场效应晶体管

BSP123L6327 规格参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	GREEN, PLASTIC PACKAGE-4	针数：	4
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.13
Is Samacsys：	N	其他特性：	LOGIC LEVEL COMPATIBLE
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	0.37 A
最大漏极电流 (ID)：	0.37 A	最大漏源导通电阻：	6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.79 W	最大脉冲漏极电流 (IDM)：	1.48 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	MATTE TIN
端子形式：	GULL WING	端子位置：	DUAL
晶体管元件材料：	SILICON	Base Number Matches：	1

BSP123L6327 数据手册

通过下载BSP123L6327数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

Rev. 1.5

BSP123

SIPMOS Small-Signal-Transistor

Feature

Product Summary

100

· N-Channel

· Enhancement mode

· Logic Level

· dv/dt rated

DS(on)

0.37

PG-SOT223

Pb-free lead plating; RoHS compliant

•

• Qualified according to AEC Q101

Type

Package

Tape and Reel Information

L6433: 4000 pcs/reel

L6327: 1000 pcs/reel

Marking Packaging

PG-SOT223

Non dry

BSP123

Maximum Ratings, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T =25°C

0.37

0.3

T =70°C

1.48

Pulsed drain current

D puls

T =25°C

kV/µs

Reverse diode dv/dt

dv/dt

I =0.37A, V =80V, di/dt=200A/µs, T =150°C

jmax

Gate source voltage

±20

tot

ESD Class JESD22-A114-HBM

Power dissipation

0 (<250V)

1.79

T =25°C

°C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T , T

-55... +150

55/150/56

stg

Page 1

2010-06-22

Rev. 1.5

BSP123

Thermal Characteristics

Parameter

Symbol

Values

typ. max.

Unit

min.

Characteristics

K/W

Thermal resistance, junction - soldering point

(Pin 4)

thJS

thJA

SMD version, device on PCB:

@ min. footprint

100

115

@ 6 cm cooling area

Electrical Characteristics, at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

100

0.8

typ. max.

Static Characteristics

Drain-source breakdown voltage

(BR)DSS

=0, I =250µA

1.4

1.8

Gate threshold voltage, V = V

GS(th)

I =50µA

µA

Zero gate voltage drain current

DSS

=100V, V =0, T =25°C

0.01

=100V, V =0, T =150°C

Gate-source leakage current

GSS

=20V, V =0

Drain-source on-state resistance

4.8

3.5

DS(on)

=2.8V, I =15mA

Drain-source on-state resistance

=4.5V, I =0.3A

Drain-source on-state resistance

=10V, I =0.37A

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (single layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

2010-06-22

Rev. 1.5

Electrical Characteristics, at T = 25 °C, unless otherwise specified

BSP123

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

Dynamic Characteristics

³ 2*I *R ,

DS(on)max

0.13

0.27

Transconductance

I =0.3A

=0, V =25V,

11.3

4.4

Input capacitance

Output capacitance

iss

f=1MHz

oss

rss

3.5

3.3

3.2

8.7

9.4

Reverse transfer capacitance C

=50V, V =10V,

Turn-on delay time

Rise time

d(on)

I =0.37A, R =6W

4.8

Turn-off delay time

Fall time

d(off)

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

=80V, I =0.37A

0.09

0.8

0.13 nC

1.2

=80V, I =0.37A,

1.6

2.4

=0 to 10V

=80V, I = 0.37 A

3.61

Gate plateau voltage

(plateau)

Reverse Diode

T =25°C

0.37 A

1.48

Inverse diode continuous

forward current

Inv. diode direct current, pulsedI

=0, I = I

0.9

1.2

Inverse diode forward voltage V

V =50V, I =l ,

52.7

17.8

Reverse recovery time

F S

di /dt=100A/µs

Reverse recovery charge

Page 3

2010-06-22

Rev. 1.5

BSP123

1 Power dissipation

2 Drain current

I = f (T )

= f (T )

tot

parameter: V ³ 10 V

BSP123

0.4

1.9

1.6

1.4

1.2

0.32

0.28

0.24

0.2

0.8

0.6

0.4

0.2

0.16

0.12

0.08

0.04

80 100 120

160

80 100 120

160

°C

3 Safe operating area

I = f ( V

4 Transient thermal impedance

Z = f (t )

thJA

)

parameter : D = 0 , T = 25 °C

parameter : D = t /T

10 ¹

BSP123

10 ³

K/W

10 ²

= 21.0ms

10 ⁰

10 ^-1

10 ^-2

10 ¹

10 ⁰

10 ^-1

D = 0.50

0.20

0.10

0.05

0.02

10 ^-2

0.01

single pulse

10 ^-3

10 ⁰

10 ¹

10 ²

10 ³

10 ^-510 ^-410 ^-310 ^-210 ^-110 ⁰10 ¹

10 ³

Page 4

2010-06-2

Rev. 1.5

BSP123

5 Typ. output characteristic

I = f (V )

6 Typ. drain-source on resistance

= f (I )

DS(on)

parameter: T = 25 °C, V

parameter: Tj = 25 °C, V

0.7

10V

2.3V

2.9V

3.1V

3.5V

3.7V

3.9V

4.1V

4.5V

5.0V

10V

4.5V

4.1V

0.55 3.9V

3.7V

0.6

0.5

3.5V

3.1V

2.9V

2.3V

0.45

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0.5

1.5

2.5

3.5

0.1

0.2

0.3

0.4

0.5

0.7

7 Typ. transfer characteristics

8 Typ. forward transconductance

g = f(I )

I = f ( V ); V ³ 2 x I x R

DS(on)max

parameter: Tj = 25 °C

0.7

0.4

0.3

0.25

0.2

0.5

0.4

0.3

0.2

0.1

0.15

0.1

0.05

0.5

1.5

2.5

3.5

0.1

0.2

0.3

0.4

0.5

0.7

Page 5

2010-06-22

Rev. 1.5

BSP123

9 Drain-source on-state resistance

= f (T )

10 Typ. gate threshold voltage

V = f (T )

GS(th)

DS(on)

parameter : I = 0.37 A, V = 10 V

parameter: V = V ; I =50µA

GS DS D

BSP123

2.2

98%

typ.

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

98%

typ

°C

-60

-20

100

180

-60

-20

100

160

°C

11 Typ. capacitances

C = f (V )

12 Forward character. of reverse diode

I = f (V )

parameter: V =0, f=1 MHz, Tj = 25 °C

parameter: T

10 ³

10 ¹

BSP123

10 ²

10 ⁰

iss

oss

10 ¹

10 ^-1

T_j= 25 °C typ

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

rss

10 ⁰

10 ^-2

12 16 20 24 28

0.4

0.8

1.2

1.6

2.4

Page 6

2010-06-22

Rev. 1.5

14 Drain-source breakdown voltage

BSP123

13 Typ. gate charge

= f (Q ); parameter: V

= f (T )

(BR)DSS

I = 0.37 A pulsed, T = 25 °C

BSP123

120

114

112

110

108

106

104

102

100

0.2 V_{DS max}

0.5 V_{DS max}

0.8 V_{DS max}

0.4

0.8

1.2

1.6

2.8

-60

-20

100

180

°C

Page 7

2010-06-22

Rev. 1.5

BSP123

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Page 8

2010-06-22

BSP123L6327 替代型号

型号	制造商	描述	替代类型	文档
BSP123	INFINEON	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	功能相似
BSP123E6327	INFINEON	Power Field-Effect Transistor, 0.38A I(D), 100V, 10ohm, 1-Element, N-Channel, Silicon, Met	功能相似

BSP123L6327 相关器件

型号	制造商	描述	价格	文档
BSP123L6327HTSA1	INFINEON	Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	获取价格
BSP123L6327XT	INFINEON	Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	获取价格
BSP123L6433	INFINEON	Power Field-Effect Transistor, 0.37A I(D), 100V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4	获取价格
BSP123_10	INFINEON	SIPMOS Small-Signal-Transistor	获取价格
BSP124	NXP	TRANSISTOR 0.25 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	获取价格
BSP124	PHILIPS	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	获取价格
BSP124-T	NXP	TRANSISTOR 0.25 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	获取价格
BSP124-TAPE-13	NXP	TRANSISTOR 0.25 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	获取价格
BSP124-TAPE-7	NXP	TRANSISTOR 0.25 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	获取价格
BSP124/T1	NXP	TRANSISTOR 0.25 A, 250 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN, FET General Purpose Power	获取价格