BSP296NL6327HTSA1 [INFINEON]
Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4;
| 型号： | BSP296NL6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 光电二极管 |
| 文件： | 总9页 (文件大小：569K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP296N
OptiMOS™ Small-Signal-Transistor
Features
Product Summary
VDS
100
0.6
0.8
1.2
V
• N-channel
RDS(on),max
VGS=10 V
W
• Enhancement mode
• Logic level (4.5V rated)
VGS=4.5 V
ID
A
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-SOT223
Type
Package
Tape and Reel Information
Marking
Halogen-Free
Packing
BSP296N
SOT223
H6327: 1000 pcs/ reel
BSP296N
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
1.2
0.9
4.6
A
I D,pulse
Pulsed drain current
E AS
I D=1.2 A, R GS=25 W
Avalanche energy, single pulse
15.0
6
mJ
I D=1.2 A, V DS=80 V,
di /dt =200 A/µs,
T j,max=150 °C
Reverse diode dv /dt
dv /dt
kV/µs
V GS
Gate source voltage
±20
V
P tot
T A=25 °C
1.8
Power dissipation
W
°C
T j, T stg
Operating and storage temperature
ESD Class
-55 ... 150
0 (<250V)
260 °C
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Rev 2.0
page 1
2013-04-04
BSP296N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - soldering point
R thJS
-
-
25
K/W
Thermal resistance
junction - ambient
R thJA
minimal footprint
-
-
-
-
110
70
6 cm2 cooling area1)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=Vgs V, I D=100 µA
Drain-source breakdown voltage
Gate threshold voltage
100
0.8
-
-
V
1.4
1.8
V DS=100 V, V GS=0 V,
T j=25 °C
I DSS
Drain-source leakage current
-
-
0.1
mA
V DS=100 V, V GS=0 V,
T j=150 °C
-
-
-
-
-
10
10
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
nA
R DS(on) V GS=4.5 V, I D=0.95 A
V GS=10 V, I D=1.2 A
Drain-source on-state resistance
371
329
2.66
800
600
-
mW
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
S
I D=0.9 A
1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 2.0
page 2
2013-04-04
BSP296N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
114.8
19.7
9.8
152.7 pF
26.3
V GS=0 V, V DS=25 V,
f =1 MHz
C oss
Crss
t d(on)
t r
14.7
3.5
5.3
5.7
ns
3.8
V DD=50 V, V GS=10 V,
I D=1.2 A, R G,ext=6 W
t d(off)
t f
Turn-off delay time
Fall time
18.4
5.2
27.6
7.8
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.27
1.45
4.5
0.4
2.2
6.7
-
nC
Q gd
V DD=50 V, I D=1.2 A,
V GS=0 to 10 V
Q g
V plateau
Gate plateau voltage
2.4
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
1.2
4.6
T A=25 °C
I S,pulse
V GS=0 V, I F=1.2 A,
T j=25 °C
V SD
Diode forward voltage
-
0.85
1.1
V
t rr
Reverse recovery time
-
-
27
30
40.5 ns
V R=50 V, I F=1.2 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
45
nC
Rev 2.0
page 3
2013-04-04
BSP296N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
2
1.8
1.6
1.4
1.2
1
1.25
1
0.75
0.5
0.25
0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
102
10
1 µs
10 µs
100 µs
0.5
0.2
1
1 ms
10 ms
101
0.1
0.1
DC
0.05
0.02
0.01
0.01
single pulse
100
0.001
10-4
10-3
10-2
10-1
100
101
102
1
10
VDS [V]
100
1000
tp [s]
Rev 2.0
page 4
2013-04-04
BSP296N
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4.8
1000
3.3 V
4 V
3.5 V
10 V
2.8 V
3 V
4.4
4
3.6
3.2
2.8
2.4
2
750
500
250
0
3 V
3.3 V
3.5 V
2.8 V
4 V
4.5 V
1.6
1.2
0.8
0.4
0
10 V
0
2
4
6
8
0
0.8
1.6
2.4
ID [A]
3.2
4
4.8
VDS [V]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
4.8
4
6
5
4
3
2
1
0
25 °C
150 °C
3.2
2.4
1.6
0.8
0
0
1
2
3
4
0.0
0.8
1.6
2.4
3.2
4.0
4.8
VGS [V]
ID [A]
Rev 2.0
page 5
2013-04-04
BSP296N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=100 µA
parameter: I D
R DS(on)=f(T j); I D=1.2 A; V GS=10 V
1400
1200
1000
2.4
2
max
1.6
typ
800
max
1.2
600
min
0.8
400
typ
0.4
0
200
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
-60
-10
40
Tj [°C]
90
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
103
101
25 °C
Ciss
102
100
150 °C
25 °C, 98%
Coss
101
10-1
Crss
150 °C, 98%
100
10-2
0
0
10 20 30 40 50 60 70 80 90 100
VDS [V]
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
VSD [V]
Rev 2.0
page 6
2013-04-04
BSP296N
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=1.2 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
101
10
9
8
7
6
5
4
3
2
1
0
50 V
80 V
20 V
100
25 °C
125 °C
100 °C
10-1
0
1
2
3
4
5
tAV [µs]
Qgate [nC]
100
101
102
103
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
120
116
112
108
104
100
96
V GS
Qg
V gs(th)
92
88
Qg(th)
Qsw
Qgd
Qgate
84
Qgs
80
-60
-20
20
60
100
140
180
Tj [°C]
Rev 2.0
page 7
2013-04-04
BSP296N
SOT223
Package Outline:
F
Di
Rev 2.0
page 8
2013-04-04
BSP296N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.0
page 9
2013-04-04
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