BSP316E-6327 [INFINEON]
Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN;
| 型号： | BSP316E-6327 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSP 316
®
SIPMOS Small-Signal Transistor
• P channel
• Enhancement mode
• Logic Level
• V
= -0.8...-2.0 V
GS(th)
Pin 1
G
Pin 2
D
Pin 3
Pin 4
D
S
Type
Package
Marking
VDS
ID
RDS(on)
Ω
BSP 316
-100 V
-0.65 A
2.2
SOT-223
BSP 316
Type
Ordering Code
Tape and Reel Information
BSP 316
Q67000-S92
E6327
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
-100
V
DS
V
DGR
Ω
R
= 20 k
-100
GS
±
20
Gate source voltage
V
GS
Continuous drain current
I
A
D
T = 24 ˚C
-0.65
-2.6
1.8
A
DC drain current, pulsed
I
Dpuls
T = 25 ˚C
A
Power dissipation
P
W
tot
T = 25 ˚C
A
Data Sheet
1
05.99
BSP 316
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150
-55 ... + 150
˚C
j
T
stg
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤
≤
70
10
K/W
thJA
R
thJS
E
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = -0.25 mA, T = 25 ˚C
V
V
I
V
(BR)DSS
GS(th)
V
-100
-0.8
-
-
GS
D
j
Gate threshold voltage
I = -1 mA
V
=V
GS DS, D
-1.1
-2
Zero gate voltage drain current
DSS
V
V
V
= -100 V, V = 0 V, T = 25 ˚C
-
-0.1
-10
-
-1
µA
DS
DS
DS
GS
j
= -100 V, V = 0 V, T = 125 ˚C
-
-
-100
-100
GS
j
= -60 V, V = 0 V, T = 25 ˚C
nA
nA
GS
j
Gate-source leakage current
= -20 V, V = 0 V
I
GSS
V
-
-
-10
1.4
-100
2.2
GS
DS
Ω
Drain-Source on-state resistance
= -10 V, I = -0.65 A
R
DS(on)
V
GS
D
Data Sheet
2
05.99
BSP 316
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Dynamic Characteristics
Transconductance
g
S
fs
V
≥
2 I
R I = -0.65 A
0.25
0.45
280
75
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
t
pF
iss
V
-
370
110
40
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
rss
V
-
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
V
25
GS
DS
Turn-on delay time
ns
d(on)
V
R
= -30 V, V = -10 V, I = -0.29 A
GS D
DD
= 50
Ω
-
-
-
-
8
12
GS
Rise time
t
t
t
r
V
= -30 V, V = -10 V, I = -0.29 A
GS D
DD
GS
R
= 50
Ω
30
80
95
45
Turn-off delay time
d(off)
V
R
= -30 V, V = -10 V, I = -0.29 A
GS D
DD
= 50
Ω
110
130
GS
Fall time
f
V
R
= -30 V, V = -10 V, I = -0.29 A
GS D
DD
= 50
Ω
GS
Data Sheet
3
05.99
BSP 316
Electrical Characteristics,
Parameter
at T = 25˚C, unless otherwise specified
j
Symbol
min.
Values
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
I
I
A
S
T = 25 ˚C
-
-
-
-
-0.65
-2.6
A
Inverse diode direct current,pulsed
SM
T = 25 ˚C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = -1.3 A, T = 25 ˚C
-1
-1.3
GS
F
j
Data Sheet
4
05.99
BSP 316
Power dissipation
Drain current
ƒ
ƒ
I = (T )
D A
P
= (T )
tot
A
≥
parameter: V
-10 V
GS
2.0
W
-0.70
A
-0.60
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Ptot
ID
-0.55
-0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0.0
0
20
40
60
80 100 120
˚C
160
0
20
40
60
80 100 120
˚C
160
TA
TA
Safe operating area ID=f(VDS
)
Transient thermal impedance
parameter : D = 0, TC=25˚C
ƒ
= (t )
p
Z
th JA
parameter: D = t / T
p
10 2
K/W
10 1
ZthJC
10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
single pulse
10 -3
0.01
10 -4
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Data Sheet
5
05.99
BSP 316
Typ. output characteristics
Typ. drain-source on-resistance
ƒ(
ƒ(
I = V
)
R
= I )
D
DS
DS (on)
D
parameter: t = 80 µs
parameter: t = 80 µs, T = 25 ˚C
p
p
j
7.0
-1.5
P
tot = 2W
Ω
a
b
c
d
e
f
A
-1.3
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
l
i
k
j
h
g
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
[V]
GS
a
ID
RDS (on)
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
-6.0
-7.0
-8.0
-9.0
-10.0
b
c
d
e
f
f
e
g
h
i
g
h
d
j
k
l
c
a
i
j
k
l
V
[V] =
b
GS
a
b
c
d
e
f
g
h
i
j
k
l
0.5
0.0
-0.1
0.0
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0.0
-1.0
-2.0
-3.0
-4.0
V
-6.0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
A
-1.3
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
GS
fs
D
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
-3.0
A
0.75
S
-2.6
0.65
ID
-2.4
-2.2
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
gfs
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
-0.2
0.0
0.05
0.00
0
-1 -2 -3 -4 -5 -6 -7 -8
V
VGS
-10
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
A
ID
-2.6
Data Sheet
6
05.99
BSP 316
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
= (T )
GS (th) j
R
= (T )
V
DS (on)
j
parameter: I = -0.65 A, V = -10 V
parameter: V = V , I = -1 mA
GS DS D
D
GS
7.0
-4.6
V
Ω
-4.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
RDS (on)
VGS(th)
-3.6
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
98%
98%
typ
typ
2%
-0.4
0.0
0.5
0.0
-60
-20
20
60
100
˚C
Tj
160
-60
-20
20
60
100
˚C
Tj
160
Typ. capacitances
C = f (V
Forward characteristics of reverse diode
ƒ
)
I = (V
)
SD
DS
F
parameter: T , t = 80 µs
parameter:V =0V, f = 1 MHz
j
p
GS
10 4
-10 1
pF
A
C
IF
10 3
10 2
10 1
-10 0
-10 -1
-10 -2
Ciss
Tj = 25 ˚C typ
Coss
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
Crss
0
-5
-10 -15 -20 -25 -30
V
VDS
-40
0.0
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
VSD
Data Sheet
7
05.99
BSP 316
Safe operating area ID=f(VDS
)
Drain-source breakdown voltage
ƒ
parameter : D = 0.01, TC=25˚C
V
= (T )
(BR)DSS
j
-120
V
-116
-114
V(BR)DSS
-112
-110
-108
-106
-104
-102
-100
-98
-96
-94
-92
-90
-60
-20
20
60
100
˚C
Tj
160
Data Sheet
8
05.99
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