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BSP52H6327TR [INFINEON]

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-223, 4 PIN;
BSP52H6327TR
型号： BSP52H6327TR
厂家： Infineon    Infineon
描述：

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-223, 4 PIN
文件： 总8页 (文件大小：564K)
中文：  中文翻译
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BSP50-BSP52  
NPN Silicon Darlington Transistors  
• High collector current  
4
3
• Low collector-emitter saturation voltage  
• Complementary types: BSP60 - BSP62 (PNP)  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
2
1
Type  
Marking  
Pin Configuration  
Package  
SOT223  
SOT223  
SOT223  
BSP50  
BSP51  
BSP52  
BSP50 1=B 2=C 3=E  
BSP51 1=B 2=C 3=E  
BSP52 1=B 2=C 3=E  
4=C  
4=C  
4=C  
-
-
-
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BSP50  
BSP51  
V
V
V
CEO  
45  
60  
80  
BSP52  
Collector-base voltage  
BSP50  
BSP51  
CBO  
EBO  
60  
80  
90  
BSP52  
5
1
Emitter-base voltage  
Collector current  
A
I
C
2
Peak collector current, t ≤ 10 ms  
I
CM  
p
100  
1.5  
mA  
W
Base current  
Total power dissipation-  
I
B
P
tot  
T ≤ 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
stg  
-65 ... 150  
1
2011-10-05  
BSP50-BSP52  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
≤ 17  
Unit  
K/W  
1)  
R
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
V
Collector-emitter breakdown voltage  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 10 mA, I = 0 , BSP50  
45  
60  
80  
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BSP51  
C
B
I = 10 mA, I = 0 , BSP52  
C
B
Collector-base breakdown voltage  
I = 100 µA, I = 0 , BSP50  
60  
80  
90  
-
-
-
-
-
-
C
E
I = 100 µA, I = 0 , BSP51  
C
E
I = 100 µA, I = 0 , BSP52  
C
E
Emitter-base breakdown voltage  
I = 100 µA, I = 0  
5
-
-
-
-
E
C
-
10  
10  
Collector-emitter cutoff current  
= V , V = 0  
I
µA  
µA  
-
CES  
V
CE  
BE  
CE0max  
-
Emitter-base cutoff current  
I
EBO  
V
EB  
= 4 V, I = 0  
C
2)  
DC current gain  
h
FE  
I = 150 mA, V = 10 V  
1000  
2000  
-
-
-
-
C
CE  
I = 500 mA, V = 10 V  
C
CE  
2)  
Collector-emitter saturation voltage  
I = 500 mA, I = 0.5 mA  
V
V
CEsat  
-
-
-
-
1.3  
1.8  
C
B
I = 1 A, I = 1 mA  
C
B
2)  
Base emitter saturation voltage  
I = 500 mA, I = 0.5 mA  
V
BEsat  
-
-
-
-
1.9  
2.2  
C
B
I = 1 mA, I = 1 A  
C
B
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
Pulse test: t < 300µs; D < 2%  
2
2
2011-10-05  
BSP50-BSP52  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
-
200  
-
MHz  
ns  
Transition frequency  
f
T
I = 100 mA, V = 5 V, f = 100 MHz  
C
CE  
Tum-on time  
t
-
-
400  
-
-
(on)  
I = 500 mA, I = I = 0.5 mA  
C
B1  
B2  
Tum-off time  
t
1500  
(off)  
I = 500 mA, I = I = 0.5 mA  
C
B1  
B2  
3
2011-10-05  
BSP50-BSP52  
Switching time test circuit  
Switching time waveform  
4
2011-10-05  
BSP50-BSP52  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 10 V  
I = ƒ(V  
), I = Parameter  
CE  
C
CEsat  
B
BSP 50...52  
EHP00661  
BSP 50...52  
EHP00663  
103  
mA  
105  
5
hFE  
ΙC  
5
ΙB = 0.5 mA  
104  
5
4 mA  
102  
5
103  
5
102  
101  
10 1  
10 2  
10 3  
mA 10 4  
0
1
V
2
Ι C  
VCE sat  
Base-emitter saturation voltage  
I = ƒ(V ), I = Parameter  
Transition frequency f = ƒ(I )  
T C  
V
= 5 V, f = 100 MHz  
C
BEsat  
B
CE  
BSP 50...52  
EHP00662  
103  
MHz  
BSP 50...52  
EHP00664  
103  
mA  
fT  
ΙC  
5
Ι
B = 0.5 mA  
4 mA  
102  
5
102  
5
101  
101  
10 1  
5
10 2  
10 3  
0
1
2
V
3
mA  
VBE sat  
Ι C  
5
2011-10-05  
BSP50-BSP52  
Collector-base capacitance C = ƒ(V )  
Total power dissipation P = ƒ(T )  
tot S  
cb  
CB  
Emitter-base capacitance C = ƒ(V )  
eb  
EB  
1650  
mW  
28  
pF  
24  
22  
20  
18  
16  
14  
12  
10  
8
CEB  
1350  
1200  
1050  
900  
750  
600  
450  
300  
150  
0
6
4
CCB  
22  
2
0
V
0
4
8
12  
16  
0
15 30 45 60 75 90 105 120  
150  
°C  
T
S
V
(V  
CB EB  
Permissible Pulse Load  
External resistance R = ƒ (T )**  
BE A  
P
/P  
= ƒ(t )  
V
= V  
totmax totDC  
p
CB  
CEmax  
** R  
for thermal stability  
BEmax  
BSP 50...52  
EHP00943  
BSP 50...52  
EHP00660  
103  
107  
Ptotmax  
PtotDC  
Ω
t p  
5
t p  
T
RBE  
D
=
5
T
102  
5
D
=
0
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
106  
5
101  
5
100  
105  
10-6 10-5 10-4 10-3 10-2  
10-1  
t p  
s
100  
0
50  
100  
˚C 150  
TA  
6
2011-10-05  
Package SOT223  
BSP50-BSP52  
Package Outline  
0.1  
1.6  
0.2  
6.5  
A
0.1  
0.1 MAX.  
3
B
4
3
1
2
2.3  
0.1  
0.7  
0.28  
0.0  
4
4.6  
0...10˚  
M
0.25  
A
M
0.25  
B
Foot Print  
3.5  
1.2 1.1  
Marking Layout (Example)  
Manufacturer  
2005, 24 CW  
Date code (YYWW)  
BCP52-16  
Type code  
Pin 1  
Packing  
Reel ø180 mm = 1.000 Pieces/Reel  
Reel ø330 mm = 4.000 Pieces/Reel  
0.3 MAX.  
8
1.75  
6.8  
Pin 1  
7
2011-10-05  
BSP50-BSP52  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
8
2011-10-05  

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