BSS125E6288 [INFINEON]
Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN;
| 型号： | BSS125E6288 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN 晶体管 |
| 文件： | 总7页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS 125
®
SIPMOS Small-Signal Transistor
• N channel
• Enhancement mode
• V
= 1.5 ...2.5 V
GS(th)
Pin 1
G
Pin 2
D
Pin 3
S
Type
V
I
R
Package
Marking
DS
D
DS(on)
Ω
BSS 125
600 V
0.1 A
45
TO-92
SS125
Type
Ordering Code
Q62702-S021
Q67000-S008
Q67000-S233
Tape and Reel Information
BSS 125
BSS 125
BSS 125
E6288
E6296
E6325
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
600
V
DS
DGR
Ω
R
= 20 k
600
GS
Gate source voltage
V
V
± 14
GS
±
Gate-source peak voltage,aperiodic
Continuous drain current
20
gs
I
A
D
T = 35 °C
0.1
0.4
1
A
DC drain current, pulsed
I
Dpuls
T = 25 °C
A
Power dissipation
P
W
tot
T = 25 °C
A
Semiconductor Group
1
12/05/1997
BSS 125
Maximum Ratings
Parameter
Symbol
Values
Unit
Chip or operating temperature
Storage temperature
T
-55 ... + 150 °C
-55 ... + 150
j
T
stg
1)
Thermal resistance, chip to ambient air
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤ 125
K/W
thJA
E
55 / 150 / 56
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
= 0 V, I = 0.25 mA, T = 25 °C
V
V
V
(BR)DSS
GS(th)
DSS
V
600
1.5
-
-
GS
D
j
Gate threshold voltage
=V
I = 1 mA
V
2
2.5
GS DS, D
Zero gate voltage drain current
I
I
V
V
= 600 V, V
= 600 V, V
= 0 V, T = 25 °C
-
-
10
8
100
50
nA
µA
nA
DS
DS
GS
GS
j
= 0 V, T = 125 °C
j
Gate-source leakage current
= 20 V, V = 0 V
GSS
V
-
-
10
30
100
45
GS
DS
Drain-Source on-state resistance
= 10 V, I = 0.1 A
R
Ω
DS(on)
V
GS
D
Semiconductor Group
2
12/05/1997
BSS 125
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
S
fs
V
≥ 2 I
R I = 0.1 A
0.06
0.17
95
9
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
V
-
-
-
130
14
6
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
4
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 0.21 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R = 50
-
-
-
-
5
8
G
Rise time
= 30 V, V = 10 V, I = 0.21 A
r
V
DD
GS
D
Ω
R = 50
10
16
15
15
21
20
G
Turn-off delay time
= 30 V, V = 10 V, I = 0.21 A
d(off)
V
DD
GS
D
Ω
R = 50
G
Fall time
f
V
= 30 V, V = 10 V, I = 0.21 A
GS D
DD
R = 50 Ω
G
Semiconductor Group
3
12/05/1997
BSS 125
Electrical Characteristics,
Parameter
= 25°C, unless otherwise specified
at T
j
Symbol
Values
Unit
min.
typ.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
0.1
0.4
1.3
A
Inverse diode direct current,pulsed
I
SM
T = 25 °C
-
A
Inverse diode forward voltage
V
V
SD
V
= 0 V, I = 0.2 A
0.8
GS
F
Semiconductor Group
4
12/05/1997
BSS 125
Power dissipation
Drain current
ƒ
ƒ
T
D = (
P
T
I
tot = (
)
)
A
A
≥
V
parameter:
10 V
GS
1.2
W
0.11
A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.09
ID
Ptot
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.1
0.0
0.00
0
0
20
40
60
80 100 120 °C 160
TA
20
40
60
80 100 120 °C 160
TA
I
V
DS
D=f(
)
Safe operating area
Drain-source breakdown voltage
D
T
ƒ
parameter : = 0.01, C=25°C
V
T
(BR)DSS = ( )
j
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
5
12/05/1997
BSS 125
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
ID
VDS
RDS (on)
ID
)
=
)
=
t
T
t
T
parameter: p = 80 µs ,
= 25 °C
parameter: p = 80 µs, j = 25 °C
j
0.24
140
P
tot = 1W
a
b
k
i
Ω
A
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
h
f
l
g
j
d
e
120
V
[V]
GS
a
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
9.0
ID
R
DS (on)110
b
c
d
e
f
100
90
80
70
60
50
40
30
c
g
h
i
c
j
b
k
d
e
f
l
10.0
g
h
i
j
k
20
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
k
a
0.02
0.00
10
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0
0
4
8
12
16
V
24
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14
A
0.18
VDS
ID
I = f V
g
Typ. forward transconductance
fs
f I
= ( )
Typ. transfer characteristics
(
)
D
GS
D
t
t
p
parameter: = 80 µs
parameter: = 80 µs,
p
V
I
R
V
I
R
x
DS(on)max
≥ 2 x
x
≥2 x
DS
D
DS(on)max
DS
D
0.25
0.22
A
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
S
0.15
0.10
ID
gfs
0.05
0.00
0.00
0
1
2
3
4
5
6
7
8
V
10
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16
A
0.20
VGS
ID
Semiconductor Group
6
12/05/1997
BSS 125
Drain-source on-resistance
Gate threshold voltage
ƒ
ƒ
T
GS (th) = ( )
j
R
T
V
DS (on) = ( )
j
I
V
V
V I
, D = 1 mA
DS
parameter: D = 0.1 A, GS = 10 V
parameter:
=
GS
110
4.6
V
Ω
4.0
90
RDS (on)
VGS(th)
3.6
80
70
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
98%
typ
60
98%
50
2%
40
30
20
typ
10
0
0.0
-60
-60
-20
20
60
100
°C
Tj
160
-20
20
60
100
°C
Tj
160
Typ. capacitances
C f V
Forward characteristics of reverse diode
ƒ
= (
)
I
V
F = (
)
DS
SD
T , t
parameter:
p = 80 µs
V
f
=0V, = 1 MHz
parameter:
j
GS
10 3
10 0
pF
A
C
IF
10 2
10 -1
Ciss
10 1
10 -2
Coss
T
T
T
T
j = 25 °C typ
j = 150 °C typ
j = 25 °C (98%)
j = 150 °C (98%)
Crss
10 0
0
10 -3
0.0
5
10
15
20
25
30
V
VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
3.0
7
12/05/1997
Semiconductor Group
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