BSS127I [INFINEON]
N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 VDS = 600 V、RDS(on)最大 = 500 Ohm。;型号: | BSS127I |
厂家: | Infineon |
描述: | N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 VDS = 600 V、RDS(on)最大 = 500 Ohm。 |
文件: | 总10页 (文件大小:1557K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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