BSS127I [INFINEON]

N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 VDS = 600 V、RDS(on)最大 = 500 Ohm。;
BSS127I
型号: BSS127I
厂家: Infineon    Infineon
描述:

N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 VDS = 600 V、RDS(on)最大 = 500 Ohm。

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