BSS606N [INFINEON]
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control.;
| 型号： | BSS606N |
| 厂家： | 
Infineon |
| 描述： | Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control. |
| 文件： | 总9页 (文件大小：410K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS606N
OptiMOS™-3 Small-Signal-Transistor
Features
Product Summary
VDS
60
60
90
3.2
V
• N-channel
RDS(on),max
VGS=10 V
VGS=4.5 V
mW
• Enhancement mode
• Logic level (4.5V rated)
ID
A
• Avalanche rated
• Qualified according to AEC Q101
• 100%lead-free; Halogen-free; RoHS compliant
PG-SOT-89
4
1
2
3
Type
Package
Tape and Reel Information
Marking
KE
Halogen-free
Yes
Package
Non-dry
BSS606N
PG-SOT-89 H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
3.2
2.6
A
I D,pulse
Pulsed drain current
12.8
E AS
I D=3.2 A, R GS=25 W
Avalanche energy, single pulse
14
6
mJ
I D=3.2 A, V DS=48 V,
di /dt =100 A/µs,
T j,max=150 °C
Reverse diode dv /dt
dv /dt
kV/µs
V GS
Gate source voltage
±20
1.0
V
Power dissipation 1)
P tot
T A=25 °C
W
°C
T j, T stg
Operating and storage temperature
ESD Class
-55 ... 150
JESD22-A114 -HBM
class 0 (< 250V)
260 °C
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1) Value refers to minimum footprint
55/150/56
Rev 2.2
page 1
2013-04-03
BSS606N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - case
R thJC
-
-
10
K/W
R thJA
SMD version, device on PCB
minimal footprint
-
-
-
-
125
70
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=0 V, I D=15 µA
Drain-source breakdown voltage
Gate threshold voltage
60
-
-
V
1.3
1.8
2.3
V DS=60 V, V GS=0 V,
T j=25 °C
I DSS
Drain-source leakage current
-
-
-
-
1
mA
V DS=60 V, V GS=0 V,
T j=150 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
100 nA
R DS(on) V GS=4.5 V, I D=2.6 A
V GS=10 V, I D=3.2 A
Drain-source on-state resistance
66
47
90
60
mW
|V DS|>2|I D|R DS(on)max
I D=2.6 A
,
g fs
Transconductance
-
6
-
S
2) Performed on 40mmx40mmx1.5mm epoxy FR4 PCB with 6cm2 (one layer, 70μm thick) copper area for drain
connectio. PCB is vertical without blown air.
Rev 2.2
page 2
2013-04-03
BSS606N
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
494
131
10.2
5.6
2.6
13
657 pF
174
V GS=0 V, V DS=25 V,
f =1 MHz
C oss
Crss
t d(on)
t r
15.3
-
-
-
-
ns
V DD=30 V, V GS=10 V,
I D=3.2 A, R G,ext=6 W
t d(off)
t f
Turn-off delay time
Fall time
2.1
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
1.6
1.0
3.7
3.2
2.1
1.4
5.6
-
nC
Q gd
V DD=48 V, I D=3.2 A,
V GS=0 to 5 V
Q g
V plateau
Gate plateau voltage
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.9
T A=25 °C
I S,pulse
12.8
V GS=0 V, I F=3.2 A,
T j=25 °C
V SD
Diode forward voltage
-
0.8
1.1
V
t rr
Reverse recovery time
-
-
22
11
-
-
ns
V R=30 V, I F=3.2 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
Rev 2.2
page 3
2013-04-03
BSS606N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
1.2
1
3.6
3.2
2.8
2.4
2
0.8
0.6
0.4
0.2
0
1.6
1.2
0.8
0.4
0
0
40
80
120
160
0
20
40
60
80 100 120 140 160
TA [°C]
TA [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
102
103
1 µs
10 µs
101
102
0.5
100 µs
1 ms
0.2
0.1
10 ms
100
101
0.05
DC
0.02
0.01
10-1
100
single pulse
10-2
10-1
10-1
100
101
102
10-5 10-4 10-3 10-2 10-1 100 101 102 103
VDS [V]
tp [s]
Rev 2.2
page 4
2013-04-03
BSS606N
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
10
150
3 V
4 V
10 V
9
3.3 V
4.5 V
3.5 V
8
7
6
5
4
3
2
1
0
100
4 V
3.5 V
3.3 V
4.5 V
10 V
50
3 V
2.8 V
0
0
2
4
6
8
0
2
4
6
8
10
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
10
9
12
10
8
8
7
6
5
6
4
4
3
150 °C
25 °C
2
1
0
2
0
0
1
2
3
4
5
0
2
4
6
8
10
VGS [V]
ID [A]
Rev 2.2
page 5
2013-04-03
BSS606N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=15 µA
parameter: I D
R DS(on)=f(T j); I D=3.2 A; V GS=10 V
120
100
80
2.8
2.4
2
max
typ
1.6
max
60
min
1.2
typ
40
0.8
0.4
0
20
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
103
101
Ciss
100
10-1
10-2
25 °C
150 °C
Coss
102
150 °C, 98%
25 °C, 98%
Crss
101
10-3
0
0
10
20
30
0.4
0.8
1.2
1.6
VDS [V]
VSD [V]
Rev 2.2
page 6
2013-04-03
BSS606N
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=3.2 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
101
7
6
5
4
3
2
1
0
25 °C
30 V
48 V
100
12 V
100 °C
125 °C
10-1
10-2
100
101
102
103
0
1
2
3
4
5
Qgate [nC]
tAV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
65
64
63
62
61
60
59
58
57
56
55
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev 2.2
page 7
2013-04-03
BSS606N
SOT-89
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev 2.2
page 8
2013-04-03
BSS606N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.2
page 9
2013-04-03
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