BSS64 [INFINEON]
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage); NPN硅AF和开关晶体管（高击穿电压低集电极 - 发射极饱和电压）
| 型号： | BSS64 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX 41
NPN Silicon AF and Switching Transistor
BCX 41
BSS 64
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BCX 42, BSS 63 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCX 41
BSS 64
EKs
AMs
Q62702-C1659
Q62702-S535
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
BSS 64 BCX 41
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
80
120
5
125
125
5
V
V
V
I
I
I
I
C
800
mA
A
Peak collector current
Base current
CM
1
B
100
200
330
150
mA
Peak base current
BM
Total power dissipation, T
S
= 79 ˚C
P
tot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 285
≤ 215
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BCX 41
BSS 64
Electrical Characteristics at T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
= 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
BSS 64
BCX 41
80
125
–
–
–
–
Collector-base breakdown voltage1
= 100 µA
)
IC
BSS 64
BCX 41
120
125
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
ICB0
nA
nA
µA
µA
V
V
V
V
CB = 80 V
CB = 100 V
CB = 80 V, T
BSS 64
BCX 41
BSS 64
BCX 41
–
–
–
–
–
–
–
–
100
100
20
A
= 150 ˚C
= 150 ˚C
CB = 100 V, T
A
20
Collector cutoff current
ICE0
µA
VCE = 100 V
T
A
= 85 ˚C
= 125 ˚C
BCX 41
BCX 41
–
–
–
–
10
75
TA
Emitter cutoff current
I
EB0
–
–
100
nA
–
VEB = 4 V
DC current gain1
h
FE
)
IC
IC
IC
IC
IC
IC
IC
= 100 µA, VCE = 1 V
BCX 41
BSS 64
BSS 64
BSS 64
BSS 64
BCX 41
BCX 41
25
–
20
–
–
63
40
–
–
–
–
–
–
–
–
= 1 mA,
= 4 mA,
V
V
CE = 1 V
CE = 1 V
60
80
80
55
–
= 10 mA, VCE = 1 V
= 20 mA, VCE = 1 V
= 100 mA, VCE = 1 V
= 200 mA, VCE = 1 V
–
Collector-emitter saturation voltage1
V
CEsat
BEsat
V
)
IC
IC
IC
= 300 mA, I
= 4 mA, I
= 50 mA, I
B
= 30 mA
BCX 41
BSS 64
BSS 64
–
–
–
–
–
–
0.9
0.7
3.0
B
= 0.4 mA
= 15 mA
B
Base-emitter saturation voltage1
= 300 mA, I = 30 mA
V
–
–
1.4
)
IC
B
BCX 41
AC characteristics
Transition frequency
f
T
–
–
100
12
–
–
MHz
pF
IC
= 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
C
obo
VCB = 10 V, f= 1 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %
Semiconductor Group
2
BCX 41
BSS 64
Total power dissipation Ptot = f (T
A
*; TS
)
Collector current I
C
= f (VBE
)
* Package mounted on epoxy
VCE = 1 V
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
c
V
CE = 5 V
Semiconductor Group
3
BCX 41
BSS 64
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f(VBEsat
)
IC
= f(VCEsat)
hFE = 10
hFE = 10
Collector cutoff current ICB0 = f(T
A
)
DC current gain hFE = f (I )
C
V
CB = VCE max
VCE = 1 V
Semiconductor Group
4
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