BSS806NE [INFINEON]
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control.;
| 型号： | BSS806NE |
| 厂家： | 
Infineon |
| 描述： | Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N- and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED Lighting, ADAS, body control units, SMPS and motor control. |
| 文件： | 总9页 (文件大小：566K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS806NE
OptiMOS™2 Small-Signal-Transistor
Features
Product Summary
VDS
20
57
82
2.3
V
• N-channel
RDS(on),max
VGS=2.5 V
VGS=1.8 V
mW
• Enhancement mode
• Ultra Logic level (1.8V rated)
ID
A
• ESD protected
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-SOT23
3
1
2
Type
Package
SOT23
Tape and Reel
Marking
YIs
Halogen Free
Yes
Packing
Non dry
BSS806NE
H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
2.3
1.9
9.3
A
I D,pulse
Pulsed drain current
E AS
I D=2.3 A, R GS=25 W
Avalanche energy, single pulse
10.8
6
mJ
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
Reverse diode dv /dt
dv /dt
kV/µs
V GS
Gate source voltage
±8
0.5
V
Power dissipation1)
P tot
T A=25 °C
W
°C
T j, T stg
Operating and storage temperature
ESD Class
-55 ... 150
1C(1kV to 2kV)
260 °C
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Rev 2.01
page 1
2014-01-16
BSS806NE
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
Thermal resistance,
junction - ambient
minimal footprint 1)
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D= 250 µA
V GS(th) V DS=VGS , I D=11 µA
Drain-source breakdown voltage
Gate threshold voltage
20
0.3
-
-
0.55
-
-
0.75
1
V
V DS=20 V, V GS=0 V,
I DSS
Drain-source leakage current
mA
T j=25 °C
V DS=20 V, V GS=0 V,
T j=150 °C
-
-
100
I GSS
V GS=8 V, V DS=0 V
Gate-source leakage current
-
-
-
-
6
µA
R DS(on) V GS=1.8 V, I D=1.3 A
V GS=2.5 V, I D=2.3 A
Drain-source on-state resistance
57
41
82
57
mW
|V DS|>2|I D|R DS(on)max
I D=1.9 A
,
g fs
Transconductance
9
-
S
1) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.01
page 2
2014-01-16
BSS806NE
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
370
118
20
529 pF
169
V GS=0 V, V DS=10 V,
f =1 MHz
C oss
Crss
t d(on)
t r
29
7.5
9.9
12.0
3.7
-
-
-
-
ns
V DD=10 V, V GS=2.5 V,
I D=2.3A, R G,ext=6 W
t d(off)
t f
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.55
0.58
1.7
-
-
-
-
nC
Q gd
V DD=10 V, I D=2.3 A,
V GS=0 to 2.5 V
Q g
V plateau
Gate plateau voltage
1.5
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.5
9.3
T A=25 °C
I S,pulse
V GS=0 V, I F=2.3 A,
T j=25 °C
V SD
Diode forward voltage
-
0.82
1.1
V
t rr
Reverse recovery time
-
-
11
-
-
ns
V R=10 V, I F=2.3 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
3.3
nC
Rev 2.01
page 3
2014-01-16
BSS806NE
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥2.5 V
2.5
2.0
1.5
1.0
0.5
0.0
0.5
0.375
0.25
0.125
0
0
40
80
120
160
0
20
40
60
80 100 120 140 160
TA [°C]
TA [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
102
103
101
10 µs
0.5
102
100 µs
1 ms
0.2
10 ms
0.1
100
0.05
101
0.02
10-1
10-2
10-3
0.01
DC
single pulse
100
10-1
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
101
102
VDS [V]
tp [s]
Rev 2.01
page 4
2014-01-16
BSS806NE
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4
120
1.3 V
2.5 V
1.8 V
1.4 V
1.6 V
1.5 V
100
1.6 V
3
2
1
0
80
60
40
20
0
1.5 V
1.8 V
2 V
2.5 V
1.4 V
1.3 V
1.2 V
1.1 V
0
1
2
3
4
0.0
0.4
0.8
1.2
1.6
2.0
VDS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
4
3
2
20
16
12
8
25 °C
150 °C
1
0
4
0
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
VGS [V]
ID [A]
Rev 2.01
page 5
2014-01-16
BSS806NE
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D
R DS(on)=f(T j); I D=2.3 A; V GS=2.5 V
100
80
1.2
0.8
98 %
98 %
60
typ
0.4
2 %
typ
40
0
20
0
-0.4
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
103
101
Ciss
25 °C
100
10-1
10-2
150 °C, 98%
Coss
102
150 °C
25 °C, 98%
Crss
101
10-3
0
0
5
10
15
20
0.4
0.8
1.2
1.6
VDS [V]
VSD [V]
Rev 2.01
page 6
2014-01-16
BSS806NE
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=2.3 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
101
5
4.5
4
3.5
100
25 °C
10 V
3
2.5
2
100 °C
16 V
4 V
125 °C
10-1
1.5
1
100
101
102
103
0.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
24
23
22
21
20
19
18
17
16
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev 2.01
page 7
2014-01-16
BSS806NE
SOT23
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev 2.01
page 8
2014-01-16
BSS806NE
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.01
page 9
2014-01-16
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