BSZ010NE2LS5 [INFINEON]
N-通道功率MOSFET;
| 型号： | BSZ010NE2LS5 |
| 厂家： | 
Infineon |
| 描述： | N-通道功率MOSFET |
| 文件： | 总11页 (文件大小：1069K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ010NE2LS5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
TSDSON-8ꢀFL
(enlarged source interconnection)
Features
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀbuckꢀconverters
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
6 D
5 D
Parameter
Value
Unit
VDS
25
V
RDS(on),max
ID
1
mΩ
A
212
30
Qoss
nC
nC
QG(0V..4.5V)
21
Typeꢀ/ꢀOrderingꢀCode
Package
PG-TSDSON-8 FL
Marking
RelatedꢀLinks
BSZ010NE2LS5
10NE2L5
-
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTA=25ꢀ°C,
RTHJA=60ꢀ°C/W2)
-
-
-
-
-
-
-
-
212
134
118
32
Continuous drain current1)
ID
A
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
848
160
16
A
TC=25ꢀ°C
-
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-16
-
-
-
-
-
69
2.1
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=60ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
1.8
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
20
60
Device on PCB,
6 cm² cooling area
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
25
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=16ꢀV,ꢀVDS=0ꢀV
-
-
0.8
1.0
1
1.3
VGS=10ꢀV,ꢀID=20ꢀA
VGS=4.5ꢀV,ꢀID=20ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
0.7
1.2
-
Ω
-
Transconductance
90
180
S
|VDS|≥2|ID|RDS(on)max,ꢀID=20ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
3000 3900 pF
1300 1700 pF
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz
98
-
-
pF
ns
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
12.6
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
6
-
-
-
ns
ns
ns
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
19.3
7.2
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
6.7
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Gate charge total1)
Output charge1)
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=12ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
4.8
-
4.1
-
Qsw
Qg
6.1
-
21
29.0
-
Vplateau
Qg
2.3
44.5
30
60
40
nC
nC
Qoss
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
76
848
1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
A
TC=25ꢀ°C
Diode forward voltage
0.76
20
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=12ꢀV,ꢀIF=20ꢀA,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
-
nC
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
70
240
60
50
40
30
20
10
0
200
160
120
80
40
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
single pulse
0.01
0.02
0.05
10 µs
102
101
0.1
0.2
0.5
100 µs
100
10-1
10-2
10 ms
1 ms
DC
100
10-1
10-2
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
2.4
10 V
2.8 V
2.8 V
5 V
140
4 V
2.0
1.6
1.2
0.8
0.4
0.0
3.5 V
120
3 V
3 V
100
3.5 V
80
60
40
20
0
4 V
4.5 V
5 V
10 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
160
2.4
140
120
100
80
2.0
1.6
150 °C
1.2
60
25 °C
0.8
40
25 °C
150 °C
0.4
0.0
20
0
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=20ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
1.6
2.00
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
2500 µA
250 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
5
10
15
20
25
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
5 V
12 V
20 V
8
6
4
2
0
101
25 °C
100 °C
125 °C
100
10-1
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
28
27
26
25
24
23
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
TSDSON-8-25/-26
m
j
MILLIMETERS
DIM
INCHES
MIN
0.90
0.24
0.10
0.24
3.20
2.19
1.54
0.21
3.20
2.01
0.10
MAX
1.10
0.44
0.30
0.44
3.40
2.39
1.74
0.41
3.40
2.21
0.30
MIN
MAX
0.043
0.017
0.012
0.017
0.134
0.094
0.069
0.016
0.134
0.087
0.012
A
b
0.035
0.009
0.004
0.009
0.126
0.086
0.061
0.008
0.126
0.079
0.004
b1
b2
D=D1
D2
D3
D4
E
DOCUMENT NO.
Z8B00158553
0
E4
E6
e
SCALE
0.65 (BSC)
0.026 (BSC)
8
2.5
N
8
0
2.5
L
0.30
0.40
0.50
0.51
0.70
0.70
0.012
0.016
0.020
0.020
L1
L2
aaa
F1
F2
F3
F4
F5
F6
F7
F8
F9
0.028
0.028
5mm
0.25
3.90
2.29
0.31
0.34
0.80
1.00
2.51
1.64
0.50
0.010
0.154
0.090
0.012
0.013
0.031
0.039
0.099
0.065
0.020
EUROPEAN PROJECTION
ISSUE DATE
27-12-2010
REVISION
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2020-05-12
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSZ010NE2LS5
RevisionꢀHistory
BSZ010NE2LS5
Revision:ꢀ2020-05-12,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
Update "Features"
2019-02-04
2019-05-06
2020-05-12
Update current rating
Trademarks
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2020-05-12
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