BSZ050N03MS G [INFINEON]
极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6）;
| 型号： | BSZ050N03MS G |
| 厂家： | 
Infineon |
| 描述： | 极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6） 通信 电池 栅 数据通信 服务器 电脑 栅极 调节器 |
| 文件： | 总11页 (文件大小：1558K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSZ050N03MSꢀG
MOSFET
S3O8
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
Features
•ꢀOptimizedꢀforꢀ5Vꢀdriverꢀapplicationꢀ(Notebook,ꢀVGA,ꢀPOL)
•ꢀLowꢀFOMSWꢀforꢀHighꢀFrequencyꢀSMPS
•ꢀ100%ꢀavalancheꢀtested
•ꢀN-channel
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀSuperiorꢀthermalꢀresistance
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
VDS
30
V
RDS(on),max,ꢀVGS=10V
4.5
mΩ
mΩ
A
RDS(on),max,ꢀVGS=4.5V 5.7
ID
80
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSZ050N03MS G
PG-TSDSON-8
050N03M
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
80
51
71
45
15
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=60ꢀK/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
320
20
A
TC=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
70
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
-20
20
-
-
-
-
-
48
2.1
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=60ꢀK/W2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
2.5
K/W
K/W
-
-
Device on PCB,
-
-
60
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
30
1
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=30ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=16ꢀV,ꢀVDS=0ꢀV
-
-
4.6
3.8
5.7
4.5
VGS=4.5ꢀV,ꢀID=20ꢀA
VGS=10ꢀV,ꢀID=20ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
0.7
38
1.4
75
2.5
-
Ω
-
Transconductance
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
2700 3600 pF
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=15ꢀV,ꢀf=1ꢀMHz
800
55
1100 pF
Reverse transfer capacitance
-
-
pF
ns
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
6.7
4.2
26
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
-
-
-
ns
ns
ns
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=15ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
3.2
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
7.8
4.2
3.8
7.3
17
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
10
5.6
6.2
11
22
-
Gate to source charge1)
Gate charge at threshold1)
Gate to drain charge1)
Switching charge1)
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=15ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
Qsw
Gate charge total1)
Qg
Gate plateau voltage
Gate charge total1)
Gate charge total, sync. FET1)
Output charge1)
Vplateau
Qg
2.9
34
46
19
28
-
Qg(sync)
Qoss
14
nC
-
21
VDD=15ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
45
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
320
1.1
20
A
TC=25ꢀ°C
Diode forward voltage
Reverse recovery charge1)
0.83
-
V
VGS=0ꢀV,ꢀIF=20ꢀA,ꢀTj=25ꢀ°C
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
nC
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
60
100
50
40
30
20
10
0
80
10 V
60
40
20
0
4.5 V
0
40
80
120
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀparameter:ꢀVGS
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
100 µs
102
0.5
1 ms
100
0.2
0.1
10 ms
101
0.05
DC
10-1
0.02
0.01
100
single pulse
10-1
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
180
10
4.5 V
5 V
10 V
150
3 V
8
6
4
2
0
4 V
3.2 V
120
3.5 V
4 V
90
4.5 V
5 V
6 V
3.5 V
10 V
60
3.2 V
30
0
3 V
2.8 V
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
180
160
150
120
90
120
80
40
0
60
30
150 °C
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
9
2.4
8
7
6
2.0
1.6
1.2
0.8
0.4
0.0
5
4
3
2
1
0
98 %
typ
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=20ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
150 °C, max
Ciss
103
102
101
102
101
100
Coss
Crss
0
10
20
30
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
15 V
24 V
10
8
6 V
101
6
25 °C
100 °C
125 °C
4
2
100
0
100
101
102
103
0
10
20
30
40
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
34
32
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-07-21
OptiMOSª3ꢀM-SeriesꢀPower-MOSFET,ꢀꢀV
BSZ050N03MSꢀG
RevisionꢀHistory
BSZ050N03MS G
Revision:ꢀ2020-07-21,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update current rating and footnotes
2.0
2020-07-21
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
WeꢀListenꢀtoꢀYourꢀComments
Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously
improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:
erratum@infineon.com
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2020ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-07-21
相关型号：
BSZ050N03MSGATMA1
Power Field-Effect Transistor, 40A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ0589NSATMA1
Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8
INFINEON
BSZ058N03LSGATMA1
Power Field-Effect Transistor, 40A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ063N04LS6
The OptiMOS™ 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies (SMPS) in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance (RDS(on)) and figure of merits (FOM - RDS(on) x Qg and Qgd) enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
INFINEON
BSZ065N06LS5
英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低，降低开关损耗，而不影响导通损耗。改进品质因数，支持在高开关频率下运行。此外，逻辑电平驱动提供低栅极阈值电压 (V GS(th))，使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。
INFINEON
BSZ067N06LS3 G
OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
©2020 ICPDF网 联系我们和版权申明