BSZ160N10NS3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | BSZ160N10NS3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总10页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS™ꢀPower-Transistor,ꢀ100V
OptiMOS™ꢀ3ꢀPowerꢀTransistor
BSZ160N10NS3
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
BSZ160N10NS3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
100
16
V
VDS
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R DS(on) product (FOM)
RDS(on),max
ID
mW
A
40
PG-TSDSON-8
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ160N10NS3 G
PG-TSDSON-8
160N10N
Maximum ratings, at T A=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
40
28
A
V GS=10 V, T A=25 °C,
R thJA=60 K/W2)
8
Pulsed drain current3)
I D,pulse
E AS
T C=25 °C
160
80
Avalanche energy, single pulse4)
Gate source voltage
I D=20 A, R GS=25 W
mJ
V
V GS
20
1) J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Rev. 2.1
page 1
2015-09-17
BSZ160N10NS3 G
Maximum ratings, at T A=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
63
W
T A=25 °C,
R thJA=60 K/W2)
2.1
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
Device on PCB
-
-
-
-
-
-
2.1
62
60
K/W
R thJA
minimal footprint
6 cm2 cooling area2)
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=33 µA
Drain-source breakdown voltage
Gate threshold voltage
100
2
-
-
V
2.8
3.5
V DS=100 V, V GS=0 V,
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
T j=25 °C
V DS=100 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
10
14
18
1.4
100 nA
R DS(on) V GS=10 V, I D=20 A
V GS=6 V, I D=10 A
R G
Drain-source on-state resistance
16
33
-
mW
Gate resistance
W
|V DS|>2|I D|R DS(on)max
,
g fs
Transconductance
16
33
-
S
I D=20 A
Rev. 2.1
page 2
2015-09-17
BSZ160N10NS3 G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
1300
240
11
1700 pF
V GS=0 V, V DS=50 V,
C oss
Crss
t d(on)
t r
320
-
f =1 MHz
13.0
10.0
22.0
5.0
-
-
-
-
ns
V DD=50 V, V GS=10 V,
I D=10 A, R G,ext=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
-
5.7
3.8
3.4
5.3
19
-
-
nC
Q g(th)
Q gd
-
V DD=50 V, I D=10 A,
V GS=0 to 10 V
Q sw
-
Q g
Gate charge total
25
-
V plateau
Q oss
Gate plateau voltage
Output charge
4.2
25
V
V DD=40 V, V GS=0 V
33
nC
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
40
A
V
T C=25 °C
I S,pulse
160
V GS=0 V, I F=20 A,
T j=25 °C
V SD
Diode forward voltage
-
0.9
1.2
t rr
Reverse recovery time
-
-
73
52
-
-
ns
V R=50 V, I F=10A ,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2015-09-17
BSZ160N10NS3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
70
60
50
40
30
20
10
0
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC=f(t p)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
102
10 µs
1
0.5
0.2
DC
100 µs
101
0.1
0.05
0.1
1 ms
0.02
100
0.01
10 ms
single pulse
0
0
0
0
0
0
1
0.01
10-1
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
102
103
tp [s]
VDS [V]
Rev. 2.1
page 4
2015-09-17
BSZ160N10NS3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
100
40
36
32
7 V
9 V
10 V
8 V
6 V
80
60
40
20
0
5 V
28
24
5.5 V
5.5 V
6 V
20
16
12
8
7 V
8 V
5 V
9 V
10 V
4.5 V
4
0
0
1
2
3
4
5
0
20
40
60
80
100
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
80
60
40
20
40
30
20
10
0
150 °C
25 °C
0
0
1
2
3
4
5
6
7
0
10
20
30
40
50
VGS [V]
ID [A]
Rev. 2.1
page 5
2015-09-17
BSZ160N10NS3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
40
35
30
25
4
3
330 µA
33 µA
20
2
1
0
98%
15
Typ
10
5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
102
101
100
150 °C
100
25 °C, max
Coss
25 °C
150 °C, max
10
Crss
1
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDS [V]
VSD [V]
Rev. 2.1
page 6
2015-09-17
BSZ160N10NS3 G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=10 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
50 V
20 V
80 V
10
6
25 °C
100 °C
125 °C
4
2
1
0
0.1
1
10
tAV [µs]
100
1000
0
5
10
15
20
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
105
100
95
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
90
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2015-09-17
BSZ160N10NS3 G
Package Outline: PG-TSDSON-8
Footprint
Dimensions in mm
Rev. 2.1
page 8
2015-09-17
OptiMOS™ꢀ3ꢀPowerꢀTransistor
BSZ160N10NS3
RevisionꢀHistory
BSZ160N10NS3
Revision:ꢀ2015-10-05,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Update Id condition for Vgs(th) and Tj to Ta condition for "Maximum ratings"
2015-10-05
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10
Rev.ꢀ2.1,ꢀꢀ2015-10-05
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