BSZ440N10NS3 G [INFINEON]
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。;
| 型号： | BSZ440N10NS3 G |
| 厂家： | 
Infineon |
| 描述： | 英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。 |
| 文件： | 总12页 (文件大小：1996K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOSTM
OptiMOS™3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
S3O8
1ꢀꢀꢀꢀꢀDescription
8
7
6
5
Features
•ꢀVeryꢀlowꢀgateꢀchargeꢀforꢀhighꢀfrequencyꢀapplications
•ꢀOptimizedꢀforꢀdc-dcꢀconversion
•ꢀN-channel,ꢀnormalꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ150ꢀ°Cꢀoperatingꢀtemperature
1
2
3
4
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
S 2
S 3
G 4
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
100
44
Unit
6 D
5 D
VDS
V
RDS(on),max
ID
mΩ
A
18
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSZ440N10NS3 G
PG-TSDSON-8
440N10N
-
1) J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTjꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
at 25 °C
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
-
-
-
-
-
-
18
11
5.3
TC=25ꢀ°C
Continuous drain current
ID
A
TC=100ꢀ°C
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W1)
Pulsed drain current2)
Avalanche energy, single pulse
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
72
17
20
29
A
TC=25ꢀ°C
-
mJ
V
ID=12ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case
RthJC
RthJA
-
4.3
K/W
K/W
-
-
Thermal resistance, junction - ambient,
6 cm2 cooling area1)
-
-
50
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) see figure 3
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2
Typ.
-
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=12ꢀµA
2.7
3.5
-
-
0.01
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
38
48
44
86
VGS=10ꢀV,ꢀID=12ꢀA
VGS=6ꢀV,ꢀID=6ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.5
15
-
-
Ω
-
Transconductance
8
S
|VDS|>2|ID|RDS(on)max,ꢀID=12ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
480
87
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
640
120
-
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
pF
pF
pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
Reverse transfer capacitance
6
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=6ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
4.3
1.8
9.1
2.0
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=6ꢀA,
RG=1.6ꢀΩ
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=6ꢀA,
RG=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=6ꢀA,
RG=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
2.2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=6ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=6ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=6ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=6ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=6ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀVGS=0ꢀV
Qgd
1.3
-
Qsw
Qg
2.0
-
6.8
9.1
-
Vplateau
Qoss
4.5
9.0
12
nC
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
18
72
1.2
-
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
1
V
VGS=0ꢀV,ꢀIF=18ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=6ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=6ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
44
61
ns
nC
Qrr
-
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
40
20
30
20
10
0
15
10
5
0
0
40
80
120
160
0
40
80
120
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
102
101
100
10-1
100 ns
0.5
1 µs
10 µs
0.2
100
100 µs
0.1
1 ms
DC
0.05
0.02
0.01
single pulse
10-1
10-1
100
101
102
103
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
50
70
5 V
5.5 V
60
50
40
30
20
10
0
6 V
40
10 V
7 V
7 V
30
6 V
10 V
20
5.5 V
5 V
10
4.5 V
0
0
1
2
3
0
10
20
30
40
50
60
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
40
30
25
20
15
10
5
30
20
10
150 °C
25 °C
0
0
0
2
4
6
0
5
10
15
20
25
30
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
90
4.0
80
70
60
3.5
3.0
120 µA
2.5
12 µA
98 %
50
2.0
1.5
1.0
0.5
0.0
typ
40
30
20
10
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=12ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
25 °C, 98%
150 °C, 98%
103
102
101
100
Ciss
102
101
100
Coss
Crss
0
20
40
60
80
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
8
6
4
2
0
80 V
50 V
20 V
25 °C
101
100 °C
125 °C
100
10-1
100
101
102
103
0
2
4
6
8
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=6ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
110
105
100
95
90
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TSDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2015-02-06
OptiMOSª3ꢀPower-Transistor,ꢀ100ꢀV
BSZ440N10NS3ꢀG
RevisionꢀHistory
BSZ440N10NS3 G
Revision:ꢀ2015-02-06,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
2.1
Subjects (major changes since last revision)
Insert pin numbered package drawing and trr and Qrr values
2015-02-06
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2015-02-06
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INFINEON
BSZ900N15NS3 G
与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。
INFINEON
BSZ900N15NS3GXT
Power Field-Effect Transistor, 13A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
BSZ900N20NS3 G
英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-直流转换器、不间断电源 (UPS) 和直流电机驱动逆变器中用于异步整流。
INFINEON
BSZ900N20NS3GATMA1
Power Field-Effect Transistor, 15.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
INFINEON
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