BTF6070-2ERV_技术文档

PROFET™+ 24V

BTF6070-2ERV

Smart High-Side Power Switch Dual Channel, 60 mΩ

Package PG-TDSO-14

Marking 6070-2ERV

1

Overview

Application

•

Suitable for 12 V and 24 V Trucks and Transportation Systems

Specially designed to drive Valve Applications

Can be used for PWM frequencies up to 1.5 kHz

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

V_BAT

Voltage Regulator

T₁

OUT

VS

GND

D_Z

C_VDD

C_VS

VS

VDD

GPIO

R_DEN

DEN

IN0

R_IN

OUT0

IN1

IS0

GPIO

R_IN

C_OUT

Valve

ADC IN

R_SENSE

Micro-

controller

C_SENSE

OUT1

C_OUT

IS1

R_SENSE

ADC IN

GND

Bulb

C_SENSE

D

Page-1.emf

Application Diagram with BTF6070-2ERV

Datasheet

www.infineon.com

1

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Overview

Basic Features

•

Dual channel device

Fast switching device

For 12 V and 24 V grounded loads

Very low stand-by current

3.3 V and 5 V compatible logic inputs

Electrostatic discharge protection (ESD)

Optimized electromagnetic compatibility

Logic ground independent from load ground

Very low power DMOS leakage current in OFF state

Green product (RoHS compliant)

AEC qualified

Description

The BTF6070-2ERV is a 60 mΩ dual channel Smart High-Side Power Switch, embedded in a PG-TDSO-14,

Exposed Pad package, providing protective functions and diagnosis. The power transistor is built by a

N-channel vertical power MOSFET with charge pump. The device is integrated in Smart6 HV technology. It is

specially designed to drive Valve Applications in the harsh automotive environment. For lighting applications

the nominal bulb load of P10W+P5W 24 V or P10W 12 V is considered.

Table 1

Product Summary

Parameter

Symbol

V_S(OP)

Value

5 V ... 36 V

65 V

Operating voltage range

Maximum supply voltage

V_S(LD)

Maximum ON state resistance at T_J= 150°C per channel

Nominal load current (one channel active)

Nominal load current (all channels active)

Typical current sense ratio

R_DS(ON)

I_L(NOM)1

I_L(NOM)2

k_ILIS

135 mΩ

3 A

2.3 A

1730

Minimum current limitation

I_L5(SC)

9 A

Maximum standby current with load at T_J= 25°C

I_S(OFF)

500 nA

Diagnostic Functions

•

Proportional load current sense for the 2 channels

Open load detection in ON and OFF

Short circuit to battery and ground indication

Overtemperature switch off detection

Stable diagnostic signal during short circuit

Enhanced k_ILISdependency with temperature and load current

Protection Functions

•

Stable behavior during undervoltage

Reverse polarity protection with external components

Secure load turn-off during logic ground disconnection with external components

Datasheet

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BTF6070-2ERV

Overview

•

Overtemperature protection with latch

Overvoltage protection with external components

Enhanced short circuit operation

Datasheet

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BTF6070-2ERV

Block Diagram

2

Block Diagram

Channel 0

VS

voltage sen sor

int ern al

power

supply

over

temperatu re

T

clamp for

ind uctive load

gate control

&

charge p ump

IN 0

driver

logic

over current

switch limit

DEN

ESD

protection

load current sense and

open load detection

OUT 0

IS0

forward voltage drop detection

V_S

Channel 1

T

IN1

IS1

Cont rol and pro tec tion ci rcuit equi valent to channel 0

OUT 1

Block diagramDxS.emf

GND

Figure 1

Block Diagram for the BTF6070-2ERV

Datasheet

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BTF6070-2ERV

Pin Configuration

3

Pin Configuration

3.1

Pin Assignment

GND

1

2

14

13

OUT0

IN0

DEN

IS0

3

4

5

12

11

10

OUT0

NC

OUT1

6

7

9

8

OUT1

IN1

IS1

Pinout dual SO14.vsd

Figure 2

Pin Configuration

3.2

Pin Definitions and Functions

Table 2

Pin Definition and Functions

Symbol

GND

IN0

Function

1

GrouND; Ground connection

2

INput channel 0; Input signal for channel 0 activation

Diagnostic ENable; Digital signal to enable/disable the diagnosis of the device

Sense 0; Sense current of the channel 0

3

DEN

IS0

4

5, 11

NC

Not Connected; No internal connection to the chip

INput channel 1; Input signal for channel 1 activation

Sense 1; Sense current of the channel 1

6

IN1

7

IS1

8, 9, 10

12, 13, 14

OUT1

OUT0

OUTput 1; Protected high side power output channel 1¹⁾

OUTput 0; Protected high side power output channel 0¹⁾

Voltage Supply; Battery voltage

Cooling Tab VS

1) All output pins of a given channel must be connected together on the PCB. All pins of an output are internally

connected together. PCB traces have to be designed to withstand the maximum current which can flow.

Datasheet

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BTF6070-2ERV

Pin Configuration

3.3

Voltage and Current Definition

Figure 3 shows all terms used in this data sheet, with associated convention for positive values.

I_VS

V_S

V_DS0

VS

I_IN0

I_OUT0

IN0

IN1

OUT0

OUT1

V_IN0

V_DS1

V_OUT0

V_IN1

I_DEN

DEN

IS0

I_OUT1

V_DEN

V_IS0

I_IS1

V_OUT1

IS1

GND

V_IS1

I_GND

voltage and current convention.vsd

Figure 3

Voltage and Current Definition

Datasheet

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PROFET™+ 24V

BTF6070-2ERV

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Table 3

Absolute Maximum Ratings ¹⁾

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit

Note or

Test Condition

Number

Min.

Max.

Supply Voltages

Supply voltage

V_S

-0.3

0

-

48

28

V

-

P_4.1.1

P_4.1.2

Reverse polarity voltage

-V_S(REV)

t < 2 min

T_A= 25°C

R_L≥ 25 Ω

Supply voltage for short circuit V_BAT(SC)

0

-

36

V

R_ECU= 30 mΩ

P_4.1.3

protection

R

_Supply= 10 mΩ

L_Supply= 5 µH

_Cable= 7 mΩ/m

_Cable= 1 µH/m,

R

L

l = 0 to 40 m

See Chapter 6

and Figure 29

Supply voltage for Load dump

protection

V_S(LD)

-

65

V

²⁾R_I= 2 Ω

R_L= 25 Ω

P_4.1.12

P_4.1.4

Short Circuit Capability

3)

Permanent short circuit

IN pin toggles

n_RSC1

100

k cycles

V

= 28 V

Supply

R

_ECU= 20 mΩ

_Supply= 10 mΩ

L_Supply= 5 µΗ

R

_Cable= 0 mΩL_Cable

= < 1 µΗ

3)

Permanent short circuit

IN pin toggles

n_{RSC_highL}

-

100

k cycles

V

= 28 V

P_4.1.5

Supply

R_ECU= 30 mΩ

_Supply= 10 mΩ

_Supply= 5 µΗ

R_Cable= 280 mΩ

R

L

L_Cable= 40 µΗ

Input Pins

Voltage at INPUT pins

Current through INPUT pins

Voltage at DEN pin

V_IN

-0.3

-

6

7

2

6

7

2

V

-

P_4.1.13

P_4.1.6

V_IN

V

t < 2 min

I_IN

-2

mA

V

-

P_4.1.14

P_4.1.15

P_4.1.50

P_4.1.16

V_DEN

I_DEN

-0.3

-

Voltage at DEN pin

V

t < 2 min

Current through DEN pin

-2

-

mA

-

Datasheet

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PROFET™+ 24V

BTF6070-2ERV

General Product Characteristics

Table 3

Absolute Maximum Ratings ¹⁾

T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit

Note or

Test Condition

Number

Min.

Max.

Sense Pin

Voltage at IS pin

Current through IS pin

Power Stage

V_IS

I_IS

-0.3

-25

-

V_S

V

-

P_4.1.19

P_4.1.20

50

mA

Load current

| I_L|

-

I_L(LIM)

A

-

P_4.1.21

P_4.1.22

Power dissipation (DC)

P_TOT

1.8

W

T_A= 85°C

T_J< 150°C

Maximum energy dissipation

repetitive pulse (one channel)

E_{AR_2A}

-

40

mJ

20 Mio. cycles

P_4.1.24

P_4.1.35

I_L(0)= 2 A

T

_J(0)= 105°C

1)

Negative voltage slope at output -dV_OUT/dt

-20

V/µs

V

= 28 V

OUT

(inductive clamping)

to 28 V - V_DS(AZ)V_IN

= 0 V

1)

Positive voltage slope at output dV_OUT/dt

-

20

65

V/µs

V

= 0 V to 28 V P_4.1.36

OUT

V_IN= 0 V

Voltage at power transistor

Currents

V_DS

-

P_4.1.26

Current through ground pin

Temperatures

I _GND

-20

-

20

mA

-

P_4.1.27

P_4.1.7

-150

t < 2 min

Junction temperature

Storage temperature

ESD Susceptibility

T_J

-40

-55

-

150

°C

-

P_4.1.28

P_4.1.30

T_STG

ESD susceptibility (all pins)

V_ESD

-2

-5

-

2

5

kV

⁴⁾HBM

P_4.1.31

P_4.1.32

ESD susceptibility OUT Pin vs.

GND and V_Sconnected

ESD susceptibility

V_ESD

-500

-750

-

500

750

V

⁵⁾CDM

P_4.1.33

P_4.1.34

ESD susceptibility pin (corner

pins)

1) Not subject to production test. Specified by design

2) V_S(LD)is setup without the DUT connected to the generator per ISO 7637-1

3) Threshold limit for short circuit failures: 100 ppm. Please refer to the legal disclaimer for short-circuit capability on

the Back Cover of this document

4) ESD susceptibility, Human Body Model “HBM” according to AEC Q100-002

5) ESD susceptibility, Charged Device Model “CDM” according to AEC Q100-011

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Datasheet

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PROFET™+ 24V

BTF6070-2ERV

General Product Characteristics

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

4.2

Functional Range

Table 4

Functional Range T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

28

Unit Note or

Test Condition

Number

Min.

Max.

36

Nominal operating voltage

Extended operating voltage

V_NOM

8

5

V

-

1)3)

P_4.2.1

P_4.2.2

V_S(OP)

-

48

V_IN= 4.5 V

R_L= 25 Ω

V_DS< 0.5 V

2)

Minimum functional supply

voltage

V_{S(OP)_MIN}

3.8

3

4.3

3.5

5

V

= 4.5 V

P_4.2.3

P_4.2.4

IN

R_L= 25 Ω

From I_OUT= 0 A

to V_DS< 0.5 V;

see Figure 16

2)

Undervoltage shutdown

V_S(UV)

4.1

V = 4.5 V

IN

V_DEN= 0 V

R_L= 25 Ω

From V_DS< 1 V

to I_OUT= 0 A

See Figure 16

3)

Undervoltage shutdown

hysteresis

V_{S(UV)_HYS}

I_{GND_1}

-

850

5

-

mV

mA

-

P_4.2.13

P_4.2.5

Operating current

One channel active

7

V_IN= 5.5 V

V

_DEN= 5.5 V

Device in R_DS(ON)

V_S= 36 V

Operating current

All channels active

I_{GND_2}

-

8.3

0.1

12

mA

µA

V_IN= 5.5 V

P_4.2.6

P_4.2.7

V_DEN= 5.5 V

Device in R_DS(ON)

V_S= 36 V

²⁾V_S= 36 V

V_OUT= 0 V

Standby current for whole device I_S(OFF)

with load (ambient)

0.5

V

_INfloating

_DENfloating

T_J≤ 85°C

Datasheet

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PROFET™+ 24V

BTF6070-2ERV

General Product Characteristics

Table 4

Functional Range T_J= -40°C to 150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

-

Unit Note or

Test Condition

Number

Min.

Max.

Maximum standby current for

whole device with load

I_{S(OFF)_150}

-

10

µA

V_S= 36 V

_OUT= 0 V

V_INfloating

_DENfloating

P_4.2.10

V

T_J= 150°C

Standby current for whole device I_{S(OFF_DEN)}

-

1.15

-

mA

³⁾V_S= 36 V

P_4.2.8

with load, diagnostic active

V

_OUT= 0 V

V_INfloating

_DEN= 5.5 V

V

1) Parameter deviation possible: R_DSON, I_IS(FAULT)& timing parameters. Protection functions are working.

2) Test at T_J= -40°C only

3) Not subject to production test. Specified by design.

Note:

Within the functional range the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the related electrical characteristics

table.

4.3

Thermal Resistance

Table 5

Thermal Resistance

Parameter

Symbol

Values

Typ.

2

Unit Note or

Test Condition

Number

Min.

Max.

1)

Junction to case

R_thJC

R_thJA

-

K/W

P_4.3.1

P_4.3.2

1)2)

Junction to ambient

All channels active

27

1) Not subject to production test. Specified by design.

2) Specified R_thJAvalue is according to JEDEC JESD51-2,-5,-7 at natural convection on FR4 2s2p board with 1 W power

dissipation equally dissipated for both channels at T_A=105°C ; The product (chip + package) was simulated on a 76.4

x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Where applicable, a thermal via array

under the exposed pad contacts the first inner copper layer. Please refer to Figure 4.

Datasheet

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BTF6070-2ERV

General Product Characteristics

4.3.1

PCB Set-up

70µm

1.5mm

35µm

PCB 2s2p.emf

0.3mm

Figure 4

2s2p PCB Cross Section

Figure 5

1s0p PCB Cross Section

PCB bottom view

PCB top view

1

2

3

4

5

6

7

14

13

12

11

10

9

COOLIN

G

TAB

V_S

8

PCBcooling.emf

Figure 6

PC Board Top and Bottom View for Thermal Simulation with 600 mm2 Cooling Area

Datasheet

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BTF6070-2ERV

General Product Characteristics

4.3.2

Thermal Impedance

BTF6070-2ERV

100

10

1

2s2p

1s0p - 600 mm²

1s0p - 300 mm²

1s0p - footprint

0,1

0,0001

0,001

0,01

0,1

1

10

100

1000

Time (s)

Figure 7

Typical Thermal Impedance. Both channels active. T_A= 85°C.

PCB set-up according Figure 4 / Figure 5

BTT6070-2ERV

100

1s0p - Tambient = 105°C

90

80

70

60

50

40

30

0

100

200

300

400

500

600

Cooling area (mm²)

Figure 8

Typical Thermal Resistance. Both channels active. T_A=85°C. PCB set-up 1s0p

Datasheet

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BTF6070-2ERV

Power Stage

5

Power Stage

The power stages are built using an N-channel vertical power MOSFET (DMOS) with charge pump.

5.1

Output ON-State Resistance

The ON-state resistance R_DS(ON)depends on the supply voltage as well as the junction temperature T_J. Figure 9

shows the dependencies in terms of temperature and supply voltage for the typical ON-state resistance. The

behavior in reverse polarity is described in Chapter 6.4.

240

220

200

180

160

140

120

100

80

120

110

100

90

T

= 150°C

= 25°C

= -40°C

J

T

J

T

J

80

70

60

50

60

40

30

-40

-20

0

20

40

60

80

100

120

140

160

0

5

10

15

20

25

30

35

Junction Temperature T [°C]

Supply Voltage V [V]

J

S

Figure 9

Typical ON-State Resistance

A high signal at the input pin (see Chapter 8) causes the power DMOS to switch ON with a dedicated slope,

which is optimized in terms of EMC emission.

5.2

Turn ON/OFF Characteristics with Resistive Load

Figure 10 shows the typical timing when switching a resistive load.

IN

V_{IN_H}

V_{IN_L}

t

V_OUT

dV/dt _ON

dV/dt _OFF

t_ON

90% V_S

t_{OFF_delay}

70% V_S

30% V_S

10% V_S

t_{ON_delay}

t_OFF

t

Switchingtimes.emf

Figure 10 Switching a Resistive Load Timing

Datasheet

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BTF6070-2ERV

Power Stage

5.3

Inductive Load

5.3.1

Output Clamping

When switching OFF inductive loads with high side switches, the voltage V_OUTdrops below ground potential,

because the inductance intends to continue driving the current. To prevent the destruction of the device by

avalanche due to high voltages, there is a voltage clamp mechanism Z_DS(AZ)implemented that limits negative

output voltage to a certain level (V_S- V_DS(AZ)). Please refer to Figure 11 and Figure 12 for details. Nevertheless,

the maximum allowed load inductance is limited.

VS

Z_DS(AZ)

V_DS

INx

LOGIC

I_L

V_BAT

GND

Z_GND

OUTx

V_OUT

V_INx

L, R_L

Output_clamp.vsd

Figure 11 Output Clamp

IN

t

V_OUT

V_S

V_DS(AZ)

t

V_S-V_DS(AZ)

I_L

t

Switchingan inductance.emf

Figure 12 Switching an Inductive Load Timing

Datasheet

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BTF6070-2ERV

Power Stage

5.3.2

Maximum Load Inductance

During demagnetization of inductive loads, energy has to be dissipated in the BTF6070-2ERV. This energy can

be calculated with following equation:

R_LI_L

V_S– V_DS(AZ)

----- ------------------------------

L

R_L

⎛

⎞

⎠

------------------------------

V_S– V_DS(AZ)

E = V_DS(AZ)

ln 1 –

+ I_L

(5.1)

⎝

R_L

Following equation simplifies under the assumption of R_L= 0 Ω.

V_S

L I²1 –

(5.2)

1

--

⎛

⎞

⎠

------------------------------

V_S– V_DS(AZ)

E =

⎝

2

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 13 for

the maximum allowed energy dissipation as a function of the load current.

1000

100

10

1

0

1

2

3

4

5

6

7

IL(A)

Figure 13 Maximum Energy Dissipation Single Pulse, T_{J_START}= 150°C

Datasheet

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BTF6070-2ERV

Power Stage

5.4

Inverse Current Capability

In case of inverse current, meaning a voltage V_INVat the OUTput higher than the supply voltage V_S, a current

I_INVwill flow from output to V_Spin via the body diode of the power transistor (please refer to Figure 14). The

output stage follows the state of the IN pin, except if the IN pin goes from OFF to ON during inverse.In that

particular case, the output stage is kept OFF until the inverse current disappears. Nevertheless, the current I_INV

should not be higher than I_L(INV). I_L(INV)can be considered as 3 A.

If the channel is OFF, the diagnostic will detect an open load at OFF. If the affected channel is ON, the

diagnostic will detect open load at ON (the overtemperature signal is inhibited). At the appearance of V_INV, a

parasitic diagnostic can be observed. After, the diagnosis is valid and reflects the output state. At V_INV

vanishing, the diagnosis is valid and reflects the output state. During inverse current, no protection functions

are available.

V_BAT

VS

Gate

driver

Device

logic

V_INV

INV

Comp.

I_L(INV)

OUT

GND

Z_GND

inverse current.vsd

Figure 14 Inverse Current Circuitry

Datasheet

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BTF6070-2ERV

Power Stage

5.5

Electrical Characteristics Power Stage

Table 6

Electrical Characteristics: Power Stage

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

120

Unit Note or

Test Condition

Number

Min.

R_{DS(ON)_150}90

Max.

ON-state resistance per

channel

135

mΩ I_L= I_L4= 4 A

V_IN= 4.5 V

P_5.5.1

T_J= 150°C

See Figure 9

ON-state resistance per

channel

R_{DS(ON)_25}

I_L(NOM)1

-

60

3

-

mΩ ¹⁾T_J= 25°C

P_5.5.21

P_5.5.2

P_5.5.3

Nominal load current

One channel active

-

A

¹⁾T_A= 85°C

T_J< 150°C

Nominal load current

All channels active

I_L(NOM)2

-

2.3

10

70

0.1

-

A

Output voltage drop limitation V_DS(NL)

at small load currents

-

22

75

0.5

mV

V

I_L= I_L0= 50 mA P_5.5.4

Drain to source clamping

voltage V_DS(AZ)= (V_S- V_OUT

V_DS(AZ)

I_L(OFF)

65

-

I_DS= 20 mA

See Figure 12

2)

P_5.5.5

P_5.5.6

)

Output leakage current per

µA

V floating

IN

channel T_J≤ 85°C

V_OUT= 0 V

T_J≤ 85°C

Output leakage current per

channel T_J= 150°C

I_{L(OFF)_150}

-

1

8

µA

V_INfloating

V_OUT= 0 V

T_J= 150°C

P_5.5.8

Slew rate

30% to 70% V_S

dV/dt_ON

-dV/dt_OFF

ΔdV/dt

1

2.4

0

4.5

0.5

V/µs R_L= 25 Ω

V_S= 28 V

P_5.5.11

P_5.5.12

P_5.5.13

See Figure 10

Slew rate

70% to 30% V_S

1

V/µs

Slew rate matching

-0.5

V/µs

dV/dt_ON- dV/dt_OFF

Turn-ON time to V_OUT= 90% V_St_ON

Turn-OFF time to V_OUT= 10% V_St_OFF

5

28

5

70

20

µs

P_5.5.14

P_5.5.15

P_5.5.16

5

Turn-ON / OFF matching

Δt_SW

-20

t_OFF- t_ON

Turn-ON time to V_OUT= 10% V_St_{ON_delay}

Turn-OFF time to V_OUT= 90% V_St_{OFF_delay}

-

17

40

µs

P_5.5.17

P_5.5.18

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Power Stage

Table 6

Electrical Characteristics: Power Stage (cont’d)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

115

Unit Note or

Test Condition

Number

Min.

Max.

Switch ON energy

E_ON

-

µJ

¹⁾R_L= 25 Ω

_OUT= 90% V_S

P_5.5.19

V

V_S= 36 V

Switch OFF energy

E_OFF

-

173

-

µJ

¹⁾R_L= 25 Ω

P_5.5.20

V

_OUT= 10% V_S

V_S= 36 V

1) Not subject to production test, specified by design.

2) Test at T_J= -40°C only

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Protection Functions

6

Protection Functions

The device provides integrated protection functions. These functions are designed to prevent the destruction

of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside”

normal operating range. Protection functions are designed for neither continuous nor repetitive operation.

6.1

Loss of Ground Protection

In case of loss of the module ground and the load remains connected to ground, the device protects itself by

automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN

pins.

In case of loss of device ground, it’s recommended to use input resistors between the microcontroller and the

BTF6070-2ERV to ensure switching OFF of channels.

In case of loss of module or device ground, a current (I_OUT(GND)) can flow out of the DMOS. Figure 15 sketches

the situation.

Z_GNDis recommended to be a resistor in series to a diode.

Z_IS(AZ)

VS

Z_D(AZ)

V_BAT

Z_DS(AZ)

ISx

R_SENSE

DEN

INx

LOGIC

R_DEN

R_IN

I_OUT(GND)

OUTx

Loss of ground protection.emf

Valve

ZD_ESD

GND

R_IS

Z_GND

Figure 15 Loss of Ground Protection with External Components

6.2

Undervoltage Protection

Between V_S(UV)and V_S(OP), the undervoltage mechanism is triggered. V_S(OP)represents the minimum voltage

where the switching ON and OFF can takes place. V_S(UV)represents the minimum voltage the switch can hold

ON. If the supply voltage is below the undervoltage mechanism V_S(UV), the device is OFF (turns OFF). As soon as

the supply voltage is above the undervoltage mechanism V_S(OP), then the device can be switched ON. When the

switch is ON, protection functions are operational. Nevertheless, the diagnosis is not guaranteed until V_Sis in

the V_NOMrange. Figure 16 sketches the undervoltage mechanism.

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Protection Functions

V_OUT

V_S

V_S(UV)

V_S(OP)

Undervoltage behavior.emf

Figure 16 Undervoltage Behavior

6.3

Overvoltage Protection

There is an integrated clamp mechanism for overvoltage protection (Z_D(AZ)). To guarantee this mechanism

operates properly in the application, the current in the Zener diode has to be limited by a ground resistor.

Figure 17 shows a typical application to withstand overvoltage issues. In case of supply voltage higher than

V_S(AZ), the power transistor switches ON and in addition the voltage across the logic section is clamped. As a

result, the internal ground potential rises to V_S- V_S(AZ). Due to the ESD Zener diodes, the potential at pin INx and

DEN rises almost to that potential, depending on the impedance of the connected circuitry. In the case the

device was ON, prior to overvoltage, the BTF6070-2ERV remains ON. In the case the BTF6070-2ERV was OFF,

prior to overvoltage, the power transistor can be activated. In the case the supply voltage is in above V_BAT(SC)

and below V_DS(AZ), the output transistor is still operational and follows the input. If at least one channel is in the

ON state, parameters are no longer guaranteed and lifetime is reduced compared to the nominal supply

voltage range. This especially impacts the short circuit robustness, as well as the maximum energy E_AS

capability. The values for Z_IS(A), Z_D(AZ)and Z_DS(AZ)are included in the parameter P_6.6.3. Z_GNDis recommended

to be a resistor in series to a diode.

I_SOV

Z_IS(AZ)

V_S

Z_D(AZ)

V_BAT

Z_DS(AZ)

ISx

R_SENSE

DEN

INx

LOGIC

R_DEN

R_IN

OUTx

ZD_ESD

Overvoltage protection.emf

Valve

GND

R_IS

Z_GND

Figure 17 Overvoltage Protection with External Components

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Protection Functions

6.4

Reverse Polarity Protection

In case of reverse polarity, the intrinsic body diodes of the power DMOS causes power dissipation. The current

in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the

logic pins has to be limited to the maximum current described in Chapter 4.1 with an external resistor.

Figure 18 shows a typical application. R_GNDresistor is used to limit the current in the Zener protection of the

device. Resistors R_DEN, and R_INare used to limit the current in the logic of the device and in the ESD protection

stage. R_SENSEis used to limit the current in the sense transistor which behaves as a diode. The recommended

value for R_DEN= R_IN= 10 kΩ. Z_GNDis recommended to be a resistor in series to a diode.

During reverse polarity, no protection functions are available.

Microcontroller

protection diodes

Z_IS(AZ)

V_S

Z_D(AZ)

Z_DS(AZ)

ISx

R_SENSE

V_DS(REV)

DEN

INx

R_DEN

LOGIC

-V_S(REV)

0 I N

R_IN

OUTx

ZD_ESD

Reversepolarity.emf

GND

Valve

IS

Z_GND

R_IS

Figure 18 Reverse Polarity Protection with External Components

6.5

Overload Protection

In case of overload, such as high inrush of cold lamp filament, or short circuit to ground, the BTF6070-2ERV

offers several protection mechanisms.

6.5.1

Current Limitation

At first step, the instantaneous power in the switch is maintained at a safe value by limiting the current to the

maximum current allowed in the switch I_L(SC). During this time, the DMOS temperature is increasing, which

affects the current flowing in the DMOS.

6.5.2

Temperature Limitation in the Power DMOS

Each channel incorporates both an absolute (T_J(SC)) and a dynamic (T_J(SW)) temperature sensor. Activation of

either sensor will cause an overheated channel to switch OFF to prevent destruction. Any protective switch

OFF latches the output until the temperature has reached an acceptable value. Figure 19 gives a sketch of the

situation.

No retry strategy is implemented such that when the DMOS temperature has cooled down enough, the switch

is switched ON again. Only the IN pin signal toggling can re-activate the power stage (latch behavior).

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Protection Functions

INx

t

I_Lx

LOAD CURRENT BELOW

LIMITATION PHASE

LOAD CURRENT LIMITATION PHASE

I_L(x)SC

I_L(NOM)

t

T_DMOSx

T_J(SC)

Cool DownPhase

ΔT_J(SW)

T_A

t

t_sIS(FAULT)

t_{sIS(OC_blank)}

I_ISx

I_IS(FAULT)

I_L(NOM)/ k_ILIS

0A

V_DEN

t

t_{sIS(OF F)}

0V

Hard start.emf

Figure 19 Overload Protection

Note:

For better understanding, the time scale is not linear. The real timing of this drawing is application

dependant and cannot be described.

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Protection Functions

6.6

Electrical Characteristics for the Protection Functions

Table 7

Electrical Characteristics: Protection

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Unit Note or

Test Condition

Number

Min. Typ. Max.

Loss of Ground

Output leakage current while I_OUT(GND)

-

0.1

-

µA

¹⁾²⁾V_S= 45 V

P_6.6.1

P_6.6.2

GND disconnected

See Figure 15

Reverse Polarity

Drain source diode voltage

during reverse polarity

V_DS(REV)

400

650

700

mV

I_L= - 2 A

T_J= 150°C

See Figure 18

Overvoltage

Overvoltage protection

V_S(AZ)

65

70

75

V

I_SOV= 5 mA

See Figure 17

P_6.6.3

P_6.6.4

Overload Condition

3)

Load current limitation

I_L5(SC)

∆T_J(SW)

T_J(SC)

9

11

80

14

-

A

K

V = 10 V

DS

See Figure 19

^{4) 3)}See Figure 19 P_6.6.8

Dynamic temperature

increase while switching

-

Thermal shutdown

temperature

150

-

170 ⁴⁾200 ⁴⁾°C

30

⁵⁾See Figure 19

²⁾See Figure 19

P_6.6.10

P_6.6.11

Thermal shutdown hysteresis ∆T_J(SC)

-

K

1) All pins are disconnected except VS and OUT.

2) Not Subject to production test, specified by design

3) Test at T_J= -40°C only

4) Functional test only

5) Test at T_J= +150°C only

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Diagnostic Functions

7

Diagnostic Functions

For diagnosis purpose, the BTF6070-2ERV provides a combination of digital and analog signals at the IS Pins

(IS0 and IS1). These signals are called SENSE. In case the diagnostic is disabled via DEN, pins IS become high

impedance. In case DEN is activated, the sense current of both channels is enabled. Table 8 gives the truth

table.

Table 8

Diagnostic Truth Table

DEN

IS0

IS1

0

1

Z

Sense output 0 I_IS(0)

Sense output 1 I_IS(1)

7.1

IS Pins

The BTF6070-2ERV provides a sense signal called I_ISat pins ISx. As long as no “hard” failure mode occurs (short

circuit to GND / current limitation / overtemperature / excessive dynamic temperature increase or open load

at OFF) a proportional signal to the load current (ratio k_ILIS= I_L/ I_IS) is provided. The complete IS pins and

diagnostic mechanism is described on Figure 20. The accuracy of the sense current depends on temperature

and load current. Due to the ESD protection, in connection to V_S, it is not recommended to share the IS pins

with other devices if these devices are using another battery feed. The consequence is that the unsupplied

device would be fed via the IS pin of the supplied device.

VS

I_IS(FAULT)

I_IS0= I_L0/ k_ILIS

Z_IS(AZ)

I_IS(FAULT)

I_IS1

I_L1/ k_ILIS

=

1

0

1

IS0

DEN

IS1

1

0

1

0

Sense schematics.emf

Figure 20 Diagnostic Block Diagram

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Diagnostic Functions

7.2

SENSE Signal in Different Operating Modes

Table 9 gives a quick reference for the state of the IS pins during device operation.

Table 9

Sense Signal, Function of Operation Mode

Operation Mode

Normal operation

Short circuit to GND

Overtemperature

Short circuit to V_S

Open Load

Input level Channel X DEN

OFF H

Output Level Diagnostic Output at ISx

Z

~ GND

Z

V_S

I_IS(FAULT)

< V_OL(OFF)

> V_OL(OFF)

Z

1)

I_IS(FAULT)

Inverse current

~ V_INV

~ V_S

< V_S

~ GND

Z

I_IS(FAULT)

I_IS= I_L/ k_ILIS

I_IS(FAULT)

Normal operation

Current limitation

Short circuit to GND

ON

Overtemperature T_J(SW)

event

Short circuit to V_S

Open Load

V_S

I_IS< I_L/ k_ILIS

I_IS< I_IS(OL)

2)

~ V_S

3)

Inverse current

Underload

~ V_INV

I_IS< I_IS(OL)

4)

~ V_S

I_IS(OL)< I_IS< I_L/ k_ILIS

Don’t care

L

Don’t care

Z

1) Stable with additional pull-up resistor.

2) The output current has to be smaller than I_L(OL)

.

3) After maximum t_INV

.

4) The output current has to be higher than I_L(OL)

.

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Diagnostic Functions

7.3

SENSE Signal in the Nominal Current Range

Figure 21 and Figure 22 show the current sense as a function of the load current in the power DMOS. Usually

a pull-down resistor R_ISis connected to the current sense IS pin. This resistor has to be higher than 560 Ω to

limit the power losses in the sense circuitry. A typical value is 1.8 kΩ. The blue curve represents the ideal sense

current, assuming an ideal k_ILISfactor value. The red curves shows the accuracy the device provides across full

temperature range at a defined current.

4

3.5

3

2.5

2

1.5

1

0.5

min/max Sense Current

typical Sense Current

0

1

2

3

4

5

6

I_L[A]

BTF6070-2EKV

BTF6070-2ERV

Figure 21 Current Sense for Nominal Load

7.3.1

SENSE Signal Variation as a Function of Temperature and Load Current

In some applications a better accuracy is required at smaller currents. To achieve this accuracy requirement,

a calibration on the application is possible. To avoid multiple calibration points at different load and

temperature conditions, the BTF6070-2ERV allows limited derating of the k_ILISvalue, at a given point

(T_J= +25°C). This derating is described by the parameter Δk_ILIS. Figure 22 shows the behavior of the sense

current, assuming one calibration point at nominal load at +25°C.

The blue line indicates the ideal k_ILISratio.

The red lines indicate the derating on the parameter across temperature and voltage, assuming one

calibration point at nominal temperature and nominal battery voltage.

The black lines indicate the k_ILISaccuracy without calibration.

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Diagnostic Functions

3000

2500

2000

1500

1000

calibrated k _ILIS

min/max k_ILIS

typical k_ILIS

500

0

1

2

3

4

5

6

I_L[A]

BTF6070-2EKV

BTF6070-2ERV

Figure 22 Improved Current Sense Accuracy with One Calibration Point

7.3.2

SENSE Signal Timing

Figure 23 shows the timing during settling and disabling of the SENSE.

V_INx

t

I_Lx

t_ON

t_OFF

t_ON

90% of

I_Lstatic

t

V_DEN

t

I_ISx

t_sIS(LC)

t_sIS(ON)

t_sIS(OFF)

t_{sIS(ON_DEN)}

90% of

_ISstatic

I

current sensesettlingdisablingtime.emf

Figure 23 Current Sense Settling / Disabling Timing

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Diagnostic Functions

7.3.3

SENSE Signal in Open Load

7.3.3.1 Open Load in ON Diagnostic

If the channel is ON, a leakage current can still flow through an open load, for example due to humidity. The

parameter I_L(OL)gives the threshold of recognition for this leakage current. If the current I_Lflowing out the

power DMOS is below this value, the device recognizes a failure, if the DEN is selected. In that case, the SENSE

current is below I_IS(OL). Otherwise, the minimum SENSE current is given above parameter I_IS(OL). Figure 24

shows the SENSE current behavior in this area. The red curve shows a typical product curve. The blue curve

shows the ideal current sense.

I_ISx

I_IS(OL)

Sense for OL.emf

I_Lx

I_L(OL)

Figure 24 Current Sense Ratio for Low Currents

7.3.3.2 Open Load in OFF Diagnostic

For open load diagnosis in OFF-state, an external output pull-up resistor (R_OL) is recommended. For the

calculation of pull-up resistor value, the leakage currents and the open load threshold voltage V_OL(OFF)have to

be taken into account. Figure 25 gives a sketch of the situation. I_leakagedefines the leakage current in the

complete system, including I_L(OFF)(see Chapter 5.5) and external leakages, e.g, due to humidity, corrosion,

etc... in the application.

To reduce the stand-by current of the system, an open load resistor switch S_OLis recommended. If the channel

x is OFF, the output is no longer pulled down by the load and V_OUTvoltage rises to nearly V_S. This is recognized

by the device as an open load. The voltage threshold is given by V_OL(OFF). In that case, the SENSE signal is

switched to the I_IS(FAULT)

.

An additional R_PDresistor can be used to pull V_OUTto 0 V. Otherwise, the OUT pin is floating. This resistor can

be used as well for short circuit to battery detection, see Chapter 7.3.4.

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Diagnostic Functions

V_bat

S_OL

VS

I_IS(FAULT)

OL

comp.

OUTx

ISx

I_LOFF

I_leakage

GND

Valve

V_OL(OFF)

Z_GND

Open Load in OFF.emf

Figure 25 Open Load Detection in OFF Electrical Equivalent Circuit

7.3.3.3 Open Load Diagnostic Timing

Figure 26 shows the timing during either Open Load in ON or OFF condition when the DEN pin is HIGH. Please

note that a delay t_{sIS(FAULT_OL_OFF)}has to be respected after the falling edge of the input, when applying an open

load in OFF diagnosis request, otherwise the diagnosis can be wrong.

Load is present

Open load

V_IN

V_OUT

t

V_S-V_OL(OFF)

R_DS(ON)x I_L

shutdown with load

t

I_OUT

t_{sIS(FAULT_OL_ON_OFF)}

I_IS

t_sIS(LC)

Error Settling Disabling Time.emf

t

Figure 26 Sense Signal in Open Load Timing

7.3.4

SENSE Signal with OUT in Short Circuit to V_S

In case of a short circuit between the OUTput-pin and the V_Spin, all or portion (depending on the short circuit

impedance) of the load current will flow through the short circuit. As a result, a lower current compared to the

normal operation will flow through the DMOS of the BTF6070-2ERV, which can be recognized at the current

sense signal. The open load at OFF detection circuitry can also be used to distinguish a short circuit to V_S. In

that case, an external resistor to ground R_{SC_VS}is required. Figure 27 gives a sketch of the situation.

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Diagnostic Functions

V_bat

VS

I_IS(FAULT)

V_BAT

OL

comp.

ISx

OUTx

V_OL(OFF)

GND

Valve

IS

Z_GND

R_IS

R_{SC_VS}

Sh or t c irc uit to VS .em f

Figure 27 Short Circuit to Battery Detection in OFF Electrical Equivalent Circuit

7.3.5

SENSE Signal in Case of Overload

An overload condition is defined by a current flowing out of the DMOS reaching the current limitation and / or

the absolute dynamic temperature swing T_J(SW)is reached, and / or the junction temperature reaches the

thermal shutdown temperature T_J(SC). Please refer to Chapter 6.5 for details.

In that case, the SENSE signal given is by I_IS(FAULT)when the diagnostic is selected.

The device has a thermal latch behavior, such that when the overtemperature or the exceed dynamic

temperature condition has disappeared, the DMOS is reactivated only when the IN is toggled LOW to HIGH. If

the DEN pin is activated the SENSE follows the output stage. If no reset of the latch occurs, the device remains

in the latching phase and I_S(FAULT)at the IS pin, even though the DMOS is OFF.

7.3.6

SENSE Signal in Case of Inverse Current

In the case of inverse current, the sense signal of the affected channel will indicate open load in OFF state and

indicate open load in ON state. The unaffected channels indicate normal behavior as long as the I_INVcurrent is

not exceeding the maximum value specified in Chapter 5.4.

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Diagnostic Functions

7.4

Electrical Characteristics Diagnostic Functions

Table 10 Electrical Characteristics: Diagnostics

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test Condition Number

Min.

Load Condition Threshold for Diagnostic

Max.

Open load detection

threshold in OFF state

V_S- V_OL(OFF)

4

-

6

V

V_IN= 0 V

_DEN= 4.5 V

See Figure 26

P_7.5.1

P_7.5.2

P_7.5.36

V

Open load detection

threshold in ON state

I_L(OL)

5

35

50

mA V_IN= V_DEN= 4.5 V

I_IS(OL)= 10 µA

See Figure 24

Open load detection

threshold in ON state

(10 mA)

I_L2(OL)

10

mA V_IN= V_DEN= 4.5 V

I_IS(OL)= 16 µA

Sense Pin

IS pin leakage current

when sense is disabled

I_{IS_(DIS)}

-

0.02

-

1

µA V_IN= 4.5 V

P_7.5.4

P_7.5.6

V

_DEN= 0 V

I_L= I_L4= 4 A

Sense signal saturation

voltage

V_S- V_IS(RANGE)1.5

3.5

V

V_IN= 0 V

V

_OUT= V_S> 10 V

V_DEN= 4.5 V

I_IS= 6 mA

Sense signal maximum

current in fault condition

I_IS(FAULT)

6

12.5

70

30

75

mA V_IS= V_IN= 0 V

P_7.5.7

P_7.5.3

V

_OUT= V_S> 10 V

_DEN= 4.5 V

See Figure 20

Sense pin maximum

voltage

V_IS(AZ)

65

V

I_IS= 5 mA

See Figure 20

Current Sense Ratio Signal in the Nominal Area, Stable Load Current Condition

Current sense ratio

I_L0= 50 mA

k_ILIS0

k_ILIS1

k_ILIS2

k_ILIS3

k_ILIS4

-50% 1900

-22% 1730

-12% 1730

+50%

+22%

+12%

+8%

V_IN= 4.5 V

V_DEN= 4.5 V

See Figure 21

T_J= -40°C; 150°C

P_7.5.8

P_7.5.9

P_7.5.10

P_7.5.11

P_7.5.12

Current sense ratio

I_L1= 0.5 A

Current sense ratio

I_L2= 1 A

Current sense ratio

I_L3= 2 A

-8%

-7%

1730

Current sense ratio

+7%

I_L4= 4 A

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Diagnostic Functions

Table 10 Electrical Characteristics: Diagnostics (cont’d)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

0

Unit Note or Test Condition Number

Min.

Max.

1)

k_ILISderating with current Δk_ILIS

and temperature

-5

+5

%

k

versus k_ILIS2

P_7.5.17

P_7.5.37

ILIS3

See Figure 22

1)

k_ILISderating with current Δk_ILIS

and temperature

-8

-

0

+8

90

k

versus k_ILIS1

ILIS2

(k_ILIS2-k_ILIS1

)

Diagnostic Timing in Normal Condition

2)3)

Current sense settling to

90% of I_ISstatic after

positive input slope on

both INput and DEN

t_sIS(ON)

-

µs

V_DEN= V_IN= 0 to 4.5 V P_7.5.18

V_S= 28 V

R_IS= 1.8 kΩ

C_SENSE< 100 pF

R_L= 25 Ω

See Figure 23

Current sense settling time t_{sIS(ON_DEN)}

with load current stable

and transition of the DEN

-

10

20

V_IN= 4.5 V

P_7.5.19

P_7.5.20

V

_DEN= 0 to 4.5 V

R_IS= 1.8 kΩ

_SENSE< 100 pF

C

I_L= I_L3= 2 A

See Figure 23

1)

Current sense settling time t_sIS(LC)

to I_ISstable after positive

input slope on current load

V = 4.5 V

IN

V_DEN= 4.5 V

R_IS= 1.8 kΩ

C

_SENSE< 100 pF

I_L= I_L3= 2 A to I_L= I_L4= 4 A

See Figure 23

Diagnostic Timing in Open Load Condition

Current sense settling time t_{sIS(FAULT_OL_}

-

90

µs

V_IN= 0 V

P_7.5.22

P_7.5.23

for open load detection in

V_DEN= 0 to 4.5 V

R_IS= 1.8 kΩ

C_SENSE< 100 pF

OFF)

OFF state

V

1)

_OUT= V_S= 28 V

Current sense settling time t_{sIS(FAULT_OL_}

-

200

350

V = 4.5 to 0V

IN

for open load detection in

V_DEN= 4.5 V

ON_OFF)

ON-OFF transition

R_IS= 1.8 kΩ

C_SENSE< 100 pF

V

_OUT= V_S= 28 V

See Figure 26

Datasheet

32

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Diagnostic Functions

Table 10 Electrical Characteristics: Diagnostics (cont’d)

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or Test Condition Number

Min.

Diagnostic Timing in Overload Condition

Max.

2)3)

Current sense settling time t_sIS(FAULT)

-

90

µs

V =V_DEN= 0 to 4.5 V P_7.5.24

IN

for overload detection

V_S=13.5 V

R_IS= 1.8 kΩ

C

_SENSE< 100 pF

V_DS= 10 V

See Figure 19

1)

Current sense over current t_{sIS(OC_blank)}

blanking time

-

350

-

µs

V

= V_DEN= 4.5 V

P_7.5.32

P_7.5.25

IN

R_IS= 1.8 kΩ

_SENSE< 100 pF

C

V_DS= 5 V to 0 V

See Figure 19

1)

Diagnostic disable time

DEN transition to

I_IS< 50% I_L/ k_ILIS

t_sIS(OFF)

-

20

V = 4.5 V

IN

V

_DEN= 4.5 V to 0 V

R_IS= 1.8 kΩ

C_SENSE< 100 pF

I_L= I_L3= 2 A

See Figure 23

1) Not subject to production test, specified by design

2) Test at T_J= -40°C only

3) Production test for functionality within parameter limits

Datasheet

33

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Input Pins

8

Input Pins

8.1

Input Circuitry

The input circuitry is compatible with 3.3 and 5 V microcontrollers. The concept of the input pin is to react to

voltage thresholds. An implemented Schmitt trigger avoids any undefined state if the voltage on the input pin

is slowly increasing or decreasing. The output is either OFF or ON but cannot be in a linear or undefined state.

The input circuitry is compatible with PWM applications. Figure 28 shows the electrical equivalent input

circuitry. In case the pin is not needed, it must be left opened, or must be connected to device ground (and not

module ground) via an 10 kΩ input resistor.

IN

Input circuitry.emf

GND

Figure 28 Input Pin Circuitry

8.2

DEN Pin

The DEN pin enable and disable the diagnostic functionality of the device. The pins have the same structure

as the INput pins, please refer to Figure 28.

8.3

Input Pin Voltage

The IN and DEN use a comparator with hysteresis. The switching ON / OFF takes place in a defined region, set

by the thresholds V_IN(L)Max. and V_IN(H)Min. The exact value where the ON and OFF take place are unknown and

depends on the process, as well as the temperature. To avoid cross talk and parasitic turn ON and OFF, a

hysteresis is implemented. This ensures a certain immunity to noise.

Datasheet

34

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Input Pins

8.4

Electrical Characteristics

Table 11 Electrical Characteristics: Input Pins

V_S= 8 V to 36 V, T_J= -40°C to 150°C (unless otherwise specified).

Typical values are given at V_S= 28 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

INput Pins Characteristics

Low level input voltage

range

V_IN(L)

V_IN(H)

-0.3

2

-

0.8

6

V

P_8.4.1

P_8.4.2

High level input voltage

range

1)

Input voltage hysteresis

Low level input current

High level input current

DEN Pin

V_IN(HYS)

I_IN(L)

-

250

10

-

mV

µA

P_8.4.3

P_8.4.4

P_8.4.5

1

2

25

V_IN= 0.8 V

V_IN= 5.5 V

I_IN(H)

10

Low level input voltage

range

V_DEN(L)

V_DEN(H)

-0.3

2

-

0.8

6

V

-

P_8.4.6

P_8.4.7

High level input voltage

range

-

1)

Input voltage hysteresis

Low level input current

High level input current

V_DEN(HYS)

I_DEN(L)

-

250

10

-

mV

µA

P_8.4.8

P_8.4.9

P_8.4.10

1

25

V_DEN= 0.8 V

V_DEN= 5.5 V

I_DEN(H)

2

10

1) Not subject to production test, specified by design

Datasheet

35

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Application Information

9

Application Information

Note:

The following information is given as a hint for the implementation of the device only and shall not

be regarded as a description or warranty of a certain functionality, condition or quality of the device.

V_BAT

Voltage Regulator

T₁

OUT

VS

GND

D_Z

C_VDD

C_VS

VS

VDD

GPIO

R_DEN

DEN

IN0

R_IN

OUT0

IN1

IS0

GPIO

R_IN

C_OUT

Valve

ADC IN

R_SENSE

Micro-

controller

C_SENSE

OUT1

C_OUT

IS1

R_SENSE

ADC IN

GND

Bulb

C_SENSE

D

Page-1.emf

Figure 29 Application Diagram with BTF6070-2ERV

Note:

This is a very simplified example of an application circuit. The function must be verified in the real

application.

Table 12 Bill of Material

Reference Value

Purpose

R_IN

10 kΩ

Protection of the microcontroller during overvoltage, reverse polarity

Guarantee BTF6070-2ERV channels OFF during loss of ground

R_DEN

R_PD

10 kΩ

47 kΩ

Protection of the microcontroller during overvoltage, reverse polarity

Polarization of the output for short circuit to V_Sdetection

Improve BTF6070-2ERV immunity to electromagnetic noise

R_OL

1.5 kΩ

Ensures polarization of the BTF6070-2ERV output during open load in OFF

diagnostic

Datasheet

36

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Application Information

Table 12 Bill of Material (cont’d)

Reference Value

Purpose

R_IS

1.8 kΩ

4.7 kΩ

Sense resistor

R_SENSE

Overvoltage, reverse polarity, loss of ground. Value to be tuned with

microcontroller specification.

C_SENSE

C_OUT

T1

100 pF

Sense signal filtering.

10 nF

Protection of the device during ESD and BCI

Switch the battery voltage for open load in OFF diagnostic

Protection of the BTF6070-2ERV during overvoltage

Protection of the BTF6070-2ERV during reverse polarity

Protection of the device during overvoltage

Filtering of voltage spikes at the battery line

Dual NPN/PNP

27 Ω

R_GND

D

BAS21

Z

58 V Zener diode

100 nF

C_VS

9.1

Further Application Information

•

Please contact us to get the pin FMEA

Existing App. Notes

For further information you may visit www.infineon.com

Datasheet

37

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Package Outlines

10

Package Outlines

1)

3.9 0.1

1)

8.65 0.1

14x

SEATING COPLANARITY

PLANE

0.67 0.25

6 0.2

2)

0.4 0.05

14x

BOTTOM VIEW

14

8

7

14

1

7

1

INDEX

MARKING

6.4 0.1

1.27

All dimensions are in units mm

The drawing is in compliance with ISO 128-30, Projection Method 1[

]

1)

2)

Does not Include plastic or metal protrusion of 0.15 max. per side

Dambar protrusion shall be maximum 0.1mm total in excess of width lead width

Figure 30 PG-TDSO-14¹⁾(Plastic Dual Small Outline Package) (RoHS-Compliant)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant

with government regulations the device is available as a green product. Green products are RoHS-Compliant

(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Legal Disclaimer for Short-Circuit Capability

Infineon disclaims any warranties and liablilities, whether expressed or implied, for any short-circuit failures

below the threshold limit.

Further information on packages

https://www.infineon.com/packages

1) Dimensions in mm

Datasheet

38

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Revision History

11

Revision History

Version

Date

Changes

Rev. 1.00 2019-04-25

Creation of the document

Datasheet

39

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

Table of Contents

1

2

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3.1

3.2

3.3

4

4.1

4.2

4.3

4.3.1

4.3.2

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PCB Set-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5

Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Turn ON/OFF Characteristics with Resistive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Inductive Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Inverse Current Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Electrical Characteristics Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

5.1

5.2

5.3

5.3.1

5.3.2

5.4

5.5

6

Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Undervoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Electrical Characteristics for the Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

6.1

6.2

6.3

6.4

6.5

6.5.1

6.5.2

6.6

7

7.1

7.2

7.3

Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

IS Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

SENSE Signal in Different Operating Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

SENSE Signal Variation as a Function of Temperature and Load Current . . . . . . . . . . . . . . . . . . . . . 26

SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

SENSE Signal in Open Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Open Load in ON Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Open Load in OFF Diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

Open Load Diagnostic Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

SENSE Signal with OUT in Short Circuit to V_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

SENSE Signal in Case of Overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

SENSE Signal in Case of Inverse Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Electrical Characteristics Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

7.3.1

7.3.2

7.3.3

7.3.3.1

7.3.3.2

7.3.3.3

7.3.4

7.3.5

7.3.6

7.4

8

Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Datasheet

40

Rev. 1.00

2019-04-25

PROFET™+ 24V

BTF6070-2ERV

8.1

8.2

8.3

8.4

Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

DEN Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Input Pin Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

9

Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36

9.1

Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

10

11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Datasheet

41

Rev. 1.00

2019-04-25

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on technology, delivery terms

Edition 2019-04-25

Published by

Infineon Technologies AG

81726 Munich, Germany

event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest

characteristics ("Beschaffenheitsgarantie").

Infineon Technologies Office (www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer's compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer's products and any use of the product of

Infineon Technologies in customer's applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer's technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to

such application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized representatives of Infineon Technologies,

Infineon Technologies’ products may not be used in

any applications where a failure of the product or any

consequences of the use thereof can reasonably be

expected to result in personal injury.

Document reference

BTF6070-2ERV


型号：	BTF6070-2ERV
厂家：	Infineon
描述：	The BTF6070-2ERV is especially designed for applications with higher safety requirements, such as braking systems (ABS, ESP) and therefore ISO26262 qualified (ASIL B, Safety manual is available).
文件：	总42页 (文件大小：1340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTF6070-2ERV [INFINEON]

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