BTM7700G [INFINEON]
TrilithIC; TrilithIC
| 型号： | BTM7700G |
| 厂家： | 
Infineon |
| 描述： | TrilithIC |
| 文件： | 总18页 (文件大小：753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet, Rev. 1.0, June 2007
BTM7700G
TrilithIC
Automotive Power
BTM7700G
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1
2
2.1
2.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4
Circuit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Undervoltage Lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status Flag . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.1
4.2
4.3
4.4
4.5
4.6
5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.1
5.2
5.3
5.4
6
7
8
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Data Sheet
1
Rev. 1.0, 2007-06-12
TrilithIC
BTM7700G
1
Overview
Features
•
•
•
•
Quad D-MOS switch driver
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
Low RDS ON
High side: 110 mΩ typ. @ 25°C, 280 mΩ max. @ 150°C
Low side: 80 mΩ typ. @ 25°C, 200 mΩ max. @ 150°C
Peak current: typ. 9.5 A @ 25 °C
Very low quiescent current: typ. 5 µA @ 25 °C
Small outline, enhanced power PG-DSO-package
Operates up to 40 V
•
•
•
•
•
•
•
•
•
•
•
•
•
PG-DSO-28-22
PWM frequencies up to 1 kHz
Load and GND-short-circuit-protection
Overtemperature shut down with hysteresis
Undervoltage detection with hysteresis
Status flag diagnosis
Internal clamp diodes
Isolated sources for external current sensing
Green Product (RoHS compliant)
AEC Qualified
Description
The BTM7700G is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7700G can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS® technology which combines low
RDS ON vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
R
DS ON and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.
Type
Package
Marking
BTM7700G
PG-DSO-28-22
BTM7700G
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
Description
2
Pin Configuration
2.1
Pin Assignment
DL1 1
IL1 2
28 DL1
27 SL1
26 SL1
25 DL1
24 DHVS
23 SH1
22 SH1
21 SH2
20 SH2
19 DHVS
18 DL2
17 SL2
16 SL2
15 DL2
DL1 3
N.C. 4
DHVS 5
GND 6
IH1 7
LS-Leadframe
HS-Leadframe
LS-Leadframe
ST 8
IH2 9
DHVS 10
N.C. 11
DL2 12
IL2 13
DL2 14
Figure 1
Pin Assignment BTM7700G (Top View)
Data Sheet
2
Rev. 1.0, 2007-06-12
BTM7700G
Description
Table 1
Pin No.
1, 3, 25, 28
2
Pin Definitions and Functions
Symbol Function
DL1
IL1
Drain of low-side switch1, leadframe 11)
Analog input of low-side switch1
4
N.C.
not connected
5, 10, 19, 24 DHVS
6
Drain of high-side switches and power supply voltage, leadframe 21)
Ground
GND
7
8
9
11
IH1
ST
IH2
N.C.
Digital input of high-side switch1
Status of high-side switches; open Drain output
Digital input of high-side switch2
not connected
12, 14, 15, 18 DL2
13
16,17
20,21
22,23
26,27
Drain of low-side switch2, leadframe 31)
Analog input of low-side switch2
Source of low-side switch2
IL2
SL2
SH2
SH1
SL1
Source of high-side switch2
Source of high-side switch1
Source of low-side switch1
1) To reduce the thermal resistance these pins are direct connected via metal bridges to the leadframe.
Pins written in bold type need power wiring.
Data Sheet
3
Rev. 1.0, 2007-06-12
BTM7700G
Description
2.2
Terms
VS=12V
IS
CS
CL
470nF
100µF
IFH1,2
DHVS
5,10,19,24
IST LK
IST
VDSH2
VDSH1
8
7
ST
-VFH2
-VFH1
Diagnosis
Biasing and Protection
VST
VSTL
VSTZ
IIH1
IH1
Gate
Driver
ISH2
IDL2
IDL LK 2
ISH1
IDL1
IDL LK 1
RO1
RO2
SH2
DL2
20,21
IIH1
IH2
9
6
Gate
VIH1
Driver
12,14,15,18
GND
VUVON
VUVOFF
VIH2
SH1
DL1
IGND
ILKCL
22,23
1,3,25,28
IIL1
2
IL1
IL2
IIL2
13
VIL1
VIL th 1
26,27
VIL2
VIL th 2
16,17
VDSL1
-VFL1
VDSL2
SL2
SL1
-VFL2
ISCP L 1
ISCP L 2
ISL1
ISL2
Figure 2
Table 2
Terms BTM7700G
HS-Source-Current
Named during Short Circuit
Named during Leakage-Cond.
ISH1,2
ISCP H
IDL LK
Data Sheet
4
Rev. 1.0, 2007-06-12
BTM7700G
Description
3
Block Diagram
DHVS
5,10,19,24
8
ST
Diagnosis
Biasing and Protection
7
IH1
Driver
IN OUT
0 0 L L
0 1 L H
1 0 H L
1 1 H H
RO1
RO2
20,21
SH2
DL2
9
IH2
12,14,15,18
6
GND
22, 23
SH1
DL1
1,3,25,28
2
IL1
13
IL2
26, 27
16, 17
SL1
SL2
Figure 3
Block Diagram BTM7700G
Data Sheet
5
Rev. 1.0, 2007-06-12
BTM7700G
4
Circuit Description
4.1
Input Circuit
The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are
driven by these stages and convert the logic signal into the necessary form for driving the power output stages.
The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard
N-channel vertical power-MOS-FETs.
4.2
Output Stages
The output stages consist of an low RDSON Power-MOS H-bridge. In H-bridge configuration, the D-MOS body
diodes can be used for freewheeling when communicating inductive loads. If the high-side switches are used as
single switches, positive and negative voltage spikes which occur when driving inductive loads are limited by
integrated power clamp diodes.
4.3
Short Circuit Protection
The outputs are protected against short circuit to ground and short circuit over load
An internal OP-Amp controls the Drain-Source-Voltage by comparing the DS-Voltage-Drop with an internal
reference voltage. Above this trip point the OP-Amp reduces the output current depending on the junction
temperature and the drop voltage.
4.4
Overtemperature Protection
The high-side switches also incorporate an over temperature protection circuit with hysteresis which switches off
the output transistors and sets the status output to low.
4.5
Undervoltage Lockout
When VS reaches the switch-on voltage VUVON the IC becomes active with a hysteresis. The high-side output
transistors are switched off if the supply voltage VS drops below the switch off value VUVOFF
.
4.6
Status Flag
The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the
application circuit in Figure 4 “Application Example BTM7700G” on Page 15. Various errors as listed in the
table “Diagnosis” are reported by switching the open drain output ST to low.
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
Table 3
Flag
Truth table and Diagnosis (valid only for the High-Side-Switches)
IH1 IH2 SH1 SH2 ST Remarks
Inputs Outputs
0
0
L
L
1
1
1
1
stand-by mode
Normal operation;
identical with functional truth table
0
1
1
1
0
1
L
H
switch2 active
H
H
L
H
switch1 active
both switches active
Overtemperature high-side switch1
Overtemperature high-side switch2
Overtemperature both high-side switches
0
1
X
X
0
X
1
X
X
0
1
0
1
X
L
L
X
X
L
L
L
X
X
L
L
L
L
L
1
0
1
0
1
0
0
detected
detected
detected
detected
Under voltage
X
X
L
L
1
not detected
Inputs:
Outputs:
Status:
0 = Logic LOW
1 = Logic HIGH
X = don’t care
Z = Output in tristate condition
L = Output in sink condition
H = Output in source condition
X = Voltage level undefined
1 = No error
0 = Error
Data Sheet
2
Rev. 1.0, 2007-06-12
BTM7700G
5
Electrical Characteristics
5.1
Absolute Maximum Ratings
Absolute Maximum Ratings1)
– 40 °C < Tj < 150 °C
Pos.
Parameter
Symbol
Limit Values
Unit Remarks
min.
max.
High-Side-Switches (Pins DHVS, IH1,2 and SH1,2)
5.1.1
5.1.2
Supply voltage
VS
VS(SCP)
– 0.3
–
42
28
V
V
–
Supply voltage for full short circuit
protection
3)
5.1.3
5.1.4
5.1.5
HS-drain current2)
HS-input current
HS-input voltage
IS
IIH
VIH
– 7
– 5
– 10
A
TA = 25°C; tP < 100 ms
5
16
mA Pin IH1 and IH2
V
Pin IH1 and IH2
Status Output ST
5.1.6
Status pull up voltage
VST
IST
– 0.3
– 5
5.4
5
V
5.1.7+ Status Output current
mA Pin ST
5.1.8
5.1.9
Low-Side-Switches (Pins DL1,2, IL1,2 and SL1,2)
Drain-Source-Clamp voltage
VDSL
55
–
V
VIL = 0 V; ID ≤ 1 mA
Tj = 25°C
5.1.10
5.1.11
5.1.12
5.1.13
LS-drain current2)
IDL
– 7
–
–
6
8
18
20
A
A
A
V
TA = 25°C; tP < 100 ms
TA = 25°C; tP < 10 ms
TA = 25°C; tP < 1 ms
Pin IL1 and IL2
LS-input voltage
VIL
– 20
Temperatures
5.1.14
Junction temperature
Storage temperature
Tj
Tstg
– 40
– 55
150
150
°C
°C
–
–
5.1.15
ESD Protection4)
5.1.16
5.1.17
5.1.18
5.1.19
Input LS-Switch
Input HS-Switch
Status HS-Switch
Output LS and HS-Switch
VESD
VESD
VESD
VESD
–
–
–
–
0.3
1
2
kV
kV
kV
8
kV all other pins connected
to Ground
1) Not subject to production test; specified by design
2) Single pulse
3) Internally limited
4) ESD susceptibility HBM according to EIA/JESD22-A114-B (1.5kΩ, 100pF)
Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
3
Rev. 1.0, 2007-06-12
BTM7700G
5.2
Functional Range
Pos.
5.2.20
Parameter
Symbol Limit Values
Unit
Remarks
min.
max.
Supply voltage
VS
VUVOFF
42
V
After VS rising above
VUVON
5.2.21
5.2.22
5.2.23
5.2.24
Input voltage HS
Input voltage LS
Status output current
Junction temperature
VIH
VIL
IST
Tj
– 0.3
– 0.3
0
15
20
2
V
V
mA
°C
–
–
–
–
– 40
150
Note:Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table
5.3
Thermal Resistance
Pos.
Parameter
Symbol
Limit Values
Typ. Max.
Unit
Conditions
Min.
5.3.25 LS-junction to soldering point1)
5.3.26 HS-junction to soldering point1)
5.3.27 Junction to Ambient1)
RthJSP
RthJSP
RthJA
–
–
–
–
20
20
–
K/W
K/W
K/W
measured to pin 3 or 12
–
measured to pin 19
2)
36
R
thJA = Tj(HS) / (P(HS)+ P(LS))
1) Not subject to production test, specified by design.
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Data Sheet
4
Rev. 1.0, 2007-06-12
BTM7700G
5.4
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Current Consumption HS-switch
5.4.28
Quiescent current
IS
–
5
9
µA
µA
IH1 = IH2 = 0 V
Tj = 25 °C
–
–
–
1
13
2.5
IH1 = IH2 = 0 V
5.4.29
5.4.30
5.4.31
5.4.32
Supply current;
one HS-switch active
Supply current;
both HS-switches active
Leakage current of
high-side switch
IS
mA IH1 or IH2 = 5 V
VS = 12 V
IS
–
–
–
2
–
–
5
mA IH1 and IH2 = 5 V
VS = 12 V
VIH = VS = 0 V
VS = 12 HV
ISH LK
6
µA
Leakage current through logic GND ILKCL = IFH +
in free wheeling condition ISH
Current Consumption LS-switch
10
mA
IFH = 3 A
VS = 12 V
5.4.33
Input current
IIL
–
–
10
–
100
10
nA
VIL = 20 V;
V
DSL = 0V
5.4.34
Leakage current of low-side switch IDL LK
µA
VIL = 0 V
V
DSL = 40V
Under Voltage Lockout HS-switch
5.4.35
5.4.36
5.4.37
Switch-ON voltage
Switch-OFF voltage
Switch ON/OFF hysteresis
VUVON
VUVOFF
VUVHY
–
1.8
–
–
–
1
4.8
3.5
–
V
V
V
VS increasing
VS decreasing
VUVON – VUVOFF
Output stages
5.4.38
5.4.39
5.4.40
Inverse diode of high-side switch;
VFH
VFL
–
–
–
–
–
–
0.8
0.8
110
200
80
1.2
1.2
–
V
IFH = 3 A
IFL = 3 A
Forward-voltage
Inverse diode of low-side switch;
Forward-voltage
V
Static drain-source on-resistance of RDS ON H
mΩ
mΩ
mΩ
mΩ
I
SH = 1 A; VS = 12 V
Tj = 25 °C
SH = 1 A; VS = 12 V
Tj = 150 °C
SL = 1 A; VIL = 5 V
Tj = 25 °C
high-side switch
280
–
I
5.4.41
Static drain-source
on-resistance of low-side switch
RDS ON L
I
140
200
ISL = 1 A; VIL = 5 V
Tj = 150 °C
Data Sheet
5
Rev. 1.0, 2007-06-12
BTM7700G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Short Circuit of high-side switch to GND
5.4.42 Initial peak SC current
del = 100 µs; VS = 12 V; VDSH = 12V
ISCP H
9
–
5.5
11
9.5
7
13
–
9
A
A
A
Tj = – 40 °C
Tj = + 25 °C
Tj = + 150 °C
t
Short Circuit of high-side switch to VS
5.4.43 Output pull-down-resistor
Thermal Shutdown1)
RO
12
22
50
kΩ
VDSL = 3 V
5.4.44
5.4.45
5.4.46
Thermal shutdown junction
Tj SD
Tj SO
∆Τ
155
150
–
180
170
10
190
180
–
°C
°C
°C
–
temperature
Thermal switch-on junction
temperature
Temperature hysteresis
–
∆Τ = TjSD – TjSO
Status Flag Output ST of high-side switch
5.4.47
5.4.48
5.4.49
Low output voltage
Leakage current
VST L
IST LK
VST Z
–
–
5.4
0.2
–
–
0.6
10
–
V
µA
V
IST = 1.6 mA
VST = 5 V
IST = 1.6 mA
Zener-limit-voltage
Switching times of high-side switch1)
5.4.50
5.4.51
5.4.52
5.4.53
Turn-ON-time to 90% VSH
Turn-OFF-time to 10% VSH
Slew rate on 10 to 30% VSH
Slew rate off 70 to 40% VSH
tON
tOFF
dV/dtON
-dV/dtOFF
–
–
–
–
75
60
–
160
160
1.9
2.7
µs
µs
V/µs
V/µs
RLoad = 12 Ω
VS = 12 V
–
Switching times of low-side switch1)
Turn-ON Delay Time
ns
ns
ns
ns
resistive load
5.4.54
5.4.55
5.4.56
5.4.57
td(on)
tr
td(off)
tf
–
–
–
–
5
–
–
–
–
ISL= 3A; VDSL=12V
Rise Time
22
13
18
VIL = 5V; RG = 16Ω
Switch-OFF Delay Time
Fall Time
Gate charge of low-side switch1)
Input to source charge
Input to drain charge
Input charge total
QIS
QID
QI
–
–
–
1
3
7
–
nC
nC
nC
I
I
I
SL = 3 A; VDSL=12 V
SL = 3 A; VDSL=12 V
SL = 3 A; VDSL=12 V
5.4.58
5.4.59
5.4.60
–
15
VIL = 0 to 5 V
Input plateau voltage
V(plateau)
–
2.8
-
V
ISL = 3 A; VDSL=12 V
5.4.61
1)Not subject to production test; specified by design
Data Sheet
6
Rev. 1.0, 2007-06-12
BTM7700G
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V
unless otherwise specified
Pos.
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ.
max.
Control Inputs of high-side switches IH 1, 2
5.4.62
5.4.63
5.4.64
5.4.65
5.4.66
5.4.67
5.4.68
H-input voltage
L-input voltage
Input voltage hysteresis
H-input current
L-input current
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
–
1
–
15
5
–
–
0.3
30
–
2.5
–
–
60
20
5.5
–
V
V
V
µA
µA
kΩ
V
–
–
–
VIH = 5 V
VIH = 0.4 V
–
Input series resistance
Zener limit voltage
2.7
5.4
4
–
VIH Z
IIH = 1.6 mA
Control Inputs IL1, 2
5.4.69 Gate-threshold-voltage
1) Not subject to production test; specified by design
VIL th
0.9
1.7
2.35
V
IDL = 0.5 mA
Note:The listed characteristics are ensured over the operating range of the integrated circuit. Typical
characteristics specified mean values expected over the production spread. If not otherwise specified,
typical characteristics apply at TA = 25 °C and the given supply voltage.
Data Sheet
7
Rev. 1.0, 2007-06-12
BTM7700G
6
Application Information
Note:The following simplified application examples are given as a hint for the implementation of the device only
and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the
device. The function of the described circuits must be verified in the real application
Watchdog
I
TLE
Reset
VS=12V
4278G
Q
D
RQ
100 k
CQ
CS
D01
Z39
CD
Ω
22µF
10µF
47nF
WD
R
VCC
DHVS
5,10,19,24
8
7
RS
10 k
ST
Ω
Diagnosis
Biasing and Protection
IH1
Gate
Driver
RO1
RO2
SH2
DL2
20,21
IH2
9
6
Gate
Driver
12,14,15,18
GND
XC866
M
SH1
DL1
22,23
1,3,25,28
2
IL1
IL2
13
26,27
16,17
SL2
GND
SL1
Figure 4
Application Example BTM7700G
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
Green Product (RoHS compliant)
7
Package Outlines
0.35 x 45˚
1)
7.6 -0.2
+0.09
0.23
8˚ max
0.4 +0.8
1.27
0.3
0.35 +0.152)
10.3
0.1
0.2 28x
28
15
14
1
1)
18.1-0.4
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max rer side
2) Does not include dambar protrusion of 0.05 max per side
GPS05123
Figure 5
PG-DSO-28-22 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.
Dimensions in mm
Data Sheet
1
Rev. 1.0, 2007-06-12
BTM7700G
8
Revision History
Rev. Date
Changes
1.0
2007-06-12
Initial Version
Data Sheet
1
Rev. 1.0, 2007-06-12
Edition 2007-06-12
Published by
Infineon Technologies AG
81726 Munich, Germany
© 6/25/07 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
相关型号：
BTM7700GXUMA1
Buffer/Inverter Based Peripheral Driver, 9.5A, PDSO28, GREEN, PLASTIC, 28 PIN
INFINEON
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