BTS118DXT [INFINEON]
Buffer/Inverter Based Peripheral Driver, 15A, MOS, PSSO2, GREEN, PLASTIC, TO-252, 3 PIN;
| 型号： | BTS118DXT |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 15A, MOS, PSSO2, GREEN, PLASTIC, TO-252, 3 PIN 驱动 接口集成电路 |
| 文件： | 总11页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Smart Low Side Power Switch
Power HITFET BTS 118D
Product Summary
Features
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
42
V
S Logic Level Input
DS
R
100 mꢀ
S Input Protection (ESD)
S Thermal shutdown with auto restart
• Green product (RoHS compliant)
S Overload protection
DS(on)
I
2.4
2
A
J
D(Nom)
E
AS
S Short circuit protection
S Overvoltage protection
S Current limitation
P / PG-TO252-3-11
S Analog driving possible
Application
S All kinds of resistive, inductive and capacitive loads in switching
or linear applications
S µC compatible power switch for 12 V DC applications
S Replaces electromechanical relays and discrete circuits
General Description
ꢁ
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
M
Drain
ꢀ
HITFET
Pin 2 and 4 (TAB)
Current
Limitation
Overvoltage-
Protection
In
Gate-Driving
Unit
Pin 1
Over-
temperature
Protection
Overload
Protection
Short circuit
Protection
ESD
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Maximum Ratings at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Value
42
Unit
V
Drain source voltage
V
DS
Supply voltage for full short circuit protection
V
42
bb(SC)
1)
2)
-0.2 ... +10
Continuous input voltage
V
IN
2)
Continuous input current
I
IN
mA
-0.2V ? V ? 10V
IN
self limited
V < -0.2V or V > 10V
IN IN
| I | ? 2
IN
°C
W
Operating temperature
Storage temperature
T
-40 ...+150
-55 ... +150
j
T
stg
5)
Power dissipation
P
tot
T = 85 °C
C
21
2
6cm cooling area , T = 85 °C
1.1
A
2)
J
Unclamped single pulse inductive energy
E
2
AS
2)3)
58
V
Load dump protection V
= V + V
A
V
LoadDump
S
LD
V = 0 and 10 V, td = 400 ms, R = 2 ꢀ,
IN I
R = 6 ꢀ, V = 13.5 V
A
L
2)
Electrostatic discharge voltage (Human Body Model)
2
kV
V
ESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
Thermal resistance
junction - case:
3
K/W
R
thJC
SMD: junction - ambient
@ min. footprint
R
thJA
115
55
2
@ 6 cm cooling area
4)
1
For input voltages beyond these limits I has to be limited.
IN
2
3
not subject to production test, specified by design
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
4
2 (one layer, 70µm thick) copper area for drain
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB mounted vertical without blown air.
5
not subject to production test, calculated by R
and R
thJA
ds(on)
Datasheet
2
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T = 25°C, unless otherwise specified
j
min.
Characteristics
42
-
55
V
Drain source clamp voltage
T = - 40 ...+ 150, I = 10 mA
V
DS(AZ)
j
D
µA
Off-state drain current
I
DSS
T = -40...+85 °C, V = 32 V , V = 0 V
IN
-
-
1.5
4
8
j
DS
T = 150 °C
j
12
V
Input threshold voltage
V
IN(th)
I = 0.6 mA, T = 25 °C
1.3
0.8
-
1.7
-
2.2
-
D
j
I = 0.6 mA, T = 150 °C
D
j
10
30
µA
On state input current
I
IN(on)
On-state resistance
R
mꢀ
DS(on)
V = 5 V, I = 2.2 A, T = 25 °C
j
-
-
90
120
240
IN
D
V = 5 V, I = 2.2 A, T = 150 °C
j
160
IN
D
On-state resistance
V = 10 V, I = 2.2 A, T = 25 °C
R
DS(on)
-
-
70
130
3.2
100
200
-
IN
D
j
V = 10 V, I = 2.2 A, T = 150 °C
j
IN
D
5)
2.4
A
Nominal load current
I
D(Nom)
1)
T < 150°C, V = 10 V, T = 85 °C, SMD
A
j
IN
5)
3.5
10
5
-
Nominal load current
I
D(ISO)
V = 10 V, V = 0.5 V, T = 85 °C, T < 150°C
C
IN
DS
j
2)
15
20
Current limit (active if V >2.5 V)
DS
I
D(lim)
V = 10 V, V = 12 V, t = 200 µs
IN
DS
@ 6 cm cooling area
Device switched on into existing short circuit (see diagram Determination of I
m
1
2
2
). If the device is in on condit
D(lim)
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5
not subject to production test, calculated by R
and R
thJA
ds(on)
Datasheet
3
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Electrical Characteristics
Parameter
Symbol
Values
Unit
at T = 25°C, unless otherwise specified
j
min.
typ. max.
Dynamic Characteristics
-
-
-
-
40
70
100
100
1.5
1.5
Turn-on time
V to 90% I :
IN D
t
µs
on
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V
bb
L
IN
Turn-off time
V to 10% I :
IN D
t
off
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V
bb
L
IN
0.4
0.6
Slew rate on
70 to 50% V :
bb
-dV /dt
V/µs
DS on
R = 4.7 ꢀ, V = 0 to 10 V, V = 12 V
bb
L
IN
Slew rate off
50 to 70% V :
bb
dV /dt
DS off
R = 4.7 ꢀ, V = 10 to 0 V, V = 12 V
bb
L
IN
1)
Protection Functions
150
175
10
-
-
°C
K
Thermal overload trip temperature
T
jt
2)
-
-
Thermal hysteresis
ꢂT
jt
Input current protection mode
I
100
300 µA
IN(Prot)
T = 150 °C
j
2)
2
-
-
J
Unclamped single pulse inductive energy
E
AS
I = 2.2 A, T = 25 °C, V = 12 V
bb
D
j
Inverse Diode
V
Inverse diode forward voltage
V
-
1.0
1.5
SD
I = 10.9 A, t = 250 µs, V = 0 V,
IN
F
m
t = 300 µs
P
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design
Datasheet
4
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Block diagram
Inductive and overvoltage
output clamp
Terms
R
L
D
V
Z
2
I
I
IN
D
IN
1
V
V
D
bb
DS
HITFET
3
S
S
V
IN
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
Datasheet
5
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
1 Maximum allowable power dissipation
2 On-state resistance
P
P
= f(T ) resp.
C
R
= f(T ); I =2.2A; V =10V
j D IN
tot
tot
ON
= f(T ) @ R
A
=55 K/W
thJA
3
225
mꢀ
max.
W
Rthjc = 3 K/W
175
2
150
125
100
75
SMD @ 6cm2
typ.
1.5
1
50
0.5
25
0
-50 -25
0
-50 -25
°C
0
25
50
75 100
150
°C
0
25 50 75 100 125
175
T ;T
A
T
C
j
3 On-state resistance
4 Typ. input threshold voltage
R
= f(T ); I =2.2A; V =5V
j D IN
V
= f(T ); I = 0.3 mA; V = 12V
D
ON
IN(th)
j
DS
250
2
max.
mꢀ
V
200
1.6
1.4
1.2
1
175
150
125
100
75
typ.
0.8
0.6
0.4
0.2
0
50
25
0
-50 -25
°C
0
25 50 75 100 125
175
°C
-50 -25
0
25
50
75 100
150
T
T
j
j
Datasheet
6
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
5 Typ. transfer characteristics
6 Typ. short circuit current
= f(T ); V =12V
I =f(V ); V =12V; T
D
=25°C
I
j
IN
DS
Jstart
D(lim)
DS
Parameter: V
IN
24
16
A
A
12
10
8
20
18
16
14
12
6
Vin=10V
5V
4
2
0
1
10
-50 -25
V
°C
2
3
4
5
6
7
8
10
0
25 50 75 100 125
175
V
Tj
IN
7 Typ. output characteristics
8 Off-state drain current
I =f(V ); T
DS
=25°C
I
= f(T )
j
D
Jstart
IN
DSS
Parameter: V
20
A
13
Vin=10V
µA
max.
7V
11
10
9
16
14
12
10
8
6V
5V
4V
8
7
6
5
typ.
6
4
3V
3
4
2
2
1
0
0
0
-50 -25
V
1
2
3
4
6
°C
0
25 50 75 100 125
175
V
DS
T
j
Datasheet
7
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
9 Typ. overload current
10 Typ. transient thermal impedance
2
=f(t ) @ 6 cm cooling area
I
= f(t), V =12 V, no heatsink
bb
Z
thJA
D(lim)
p
Parameter: T
Parameter: D=t /T
p
10 2
jstart
25
K/W
D=0.5
A
-40°C
10 1
0.2
0.1
0.05
0.02
25°C
10 0
15
10
5
0.01
85°C
10 -1
+150°C
10 -2
Single pulse
10 -3
10 -810 -710 -610 -510 -410 -310 -210 -110 0 10 110 2
0
0
10 4
s
ms
0.5
1
1.5
2
2.5
3
3.5
4
5
t
p
t
11 Determination of I
D(lim)
I
= f(t); t = 200µs
m
D(lim)
Parameter: T
Jstart
25
A
-40°C
25°C
15
10
5
85°C
150°C
0
0
ms
0.1
0.2
0.3
0.4
0.6
t
Datasheet
8
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Package Outlines
1
Package Outlines
+±.15
6.5
5.4
-±.±5
+±.±5
A
2.3
-±.1±
±±.1
+±.±8
B
(5)
±.5
-±.±4
+±.2±
-±.±1
±.9
±...±.15
±.15 MAX.
per side
3x
+±.±8
-±.±4
±.5
±±.1
±.75
2.28
±.1 B
4.57
M
±.25
A B
All metal surfaces tin plated,
except area of cut.
GPT±9277
Figure 1
PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
Datasheet
9
Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 118D
Revision History
2
Revision History
Version
Date
Changes
Rev. 1.3
2006-12-22
released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
Rev. 1.2
2006-12-11
AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1
Rev. 1.0
2006-08-08
2004-03-05
released non automotive green version (ITS)
released production version
Datasheet
10
Rev. 1.3, 2006-12-22
Edition 2006-12-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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