BTS247Z E3062A [INFINEON]
TEMPFET™ | Automotive Low-Side Temperature Switch;
| 型号： | BTS247Z E3062A |
| 厂家： | 
Infineon |
| 描述： | TEMPFET™ | Automotive Low-Side Temperature Switch |
| 文件： | 总13页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Speed TEMPFET
BTS247Z
Speed TEMPFET®
N-Channel
Enhancement mode
1
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with
thyristor characteristics
5
PG-TO263-5-2
Overtemperature protection
Avalanche rated
•ꢀGreen Product (RoHS Compliant)
•ꢀAEC Qualified
V
Type
Package
R
DS
DS(on)
BTS247Z E3062A
PG-TO263-5-2
55 V 18 m
D
Pin 3 and TAB
G
A
Pin 1
Pin 2
Temperature
Sensor
K
Pin 4
S
Pin 5
Pin
1
Symbol Function
G
A
D
K
S
Gate
2
Anode Temperature Sensor
Drain
3
4
Cathode Temperature Sensor
Source
5
Data Sheet
1
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain source voltage
55
55
V
V
V
DS
Drain-gate voltage, R = 20 k
Gate source voltage
GS
DGR
GS
V
20
Nominal load current (ISO 10483)
A
I
D(ISO)
V
V
= 4.5 V, V
0.5 V, T = 85 °C
12
19
GS
GS
DS
C
= 10 V, V
0.5 V, T = 85 °C
DS
C
1)
33
Continuous drain current
T = 100 °C, V = 4.5V
I
D
C
GS
Pulsed drain current
180
1.3
I
D puls
Avalanche energy, single pulse
J
E
AS
I = 12 A, R = 25
D
GS
120
W
°C
Power dissipation
P
T
tot
T = 25 °C
C
2)
-40 ...+175
200
Operating temperature
Peak temperature ( single event )
Storage temperature
j
T
jpeak
-55 ... +150
E
T
stg
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
40/150/56
1
2
current limited by bond wire
Note: Thermal trip temperature of temperature sensor is below 175°C
Data Sheet
2
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
junction - case:
-
-
-
-
-
1.25 K/W
R
thJC
Thermal resistance @ min. footprint
62
40
R
th(JA)
2
1)
33
Thermal resistance @ 6 cm cooling area
R
th(JA)
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
at T = 25°C, unless otherwise specified
j
Static Characteristics
Drain-source breakdown voltage
55
-
-
V
V
(BR)DSS
V
= 0 V, I = 0.25 mA
D
GS
Gate threshold voltage, V = V
V
GS
DS
GS(th)
1.2
-
1.6
1.65
2
-
I = 90 μA
D
I = 250 μA
D
Zero gate voltage drain current
μA
I
DSS
V
V
V
= 50 V, V = 0 V, T = -40 °C
-
-
-
-
0.1
-
0.1
1
100
DS
DS
DS
GS
j
= 50 V, V = 0 V, T = 25 °C
GS
j
= 50 V, V = 0 V, T = 150 °C
GS
j
Gate-source leakage current
nA
m
I
GSS
V
V
= 20 V, V = 0 V, T = 25 °C
-
-
10
20
100
100
GS
GS
DS
j
= 20 V, V = 0 V, T = 150 °C
DS
j
Drain-Source on-state resistance
R
DS(on)
V
V
= 4.5 V, I = 12 A
-
-
22
15
28
18
GS
GS
D
= 10 V, I = 12 A
D
1
2 (one layer, 70μm thick) copper area for drain
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB mounted vertical without blown air.
Data Sheet
3
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
at T = 25°C, unless otherwise specified
j
Dynamic Characteristics
Forward transconductance
10
-
-
-
S
g
fs
V
>2*I *R
, I = 33 A
DS
D
DS(on)max D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
1380 1730 pF
C
iss
V
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
-
410
230
15
515
290
25
C
oss
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
-
C
rss
V
GS
DS
Turn-on delay time
= 30 V, V = 4.5 V, I = 45 A,
-
ns
t
d(on)
V
DD
GS
D
R = 3.6
G
Rise time
-
-
-
30
30
20
45
45
30
t
r
V
= 30 V, V = 4.5 V, I = 45 A,
GS D
DD
R = 3.6
G
Turn-off delay time
= 30 V, V = 4.5 V, I = 45 A,
t
d(off)
V
DD
GS
D
R = 3.6
G
Fall time
t
f
V
= 30 V, V = 4.5 V, I = 45 A,
GS D
DD
R = 3.6
G
Gate Charge Characteristics
Gate charge at threshold
-
-
-
-
2
3
55
90
-
nC
Q
Q
Q
g(th)
V
= 40 V, I = 0.1 A, V = 0 to 1 V
D GS
DD
Gate charge at 5.0 V
= 40 V, I = 45 A, V = 0 to 5 V
35
60
4.5
g(5)
V
DD
D
GS
Gate charge total
= 40 V, I = 45 A, V = 0 to 10 V
g(total)
V
DD
D
GS
Gate plateau voltage
= 40 V, I = 45 A
V
V
(plateau)
V
DD
D
Data Sheet
4
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
at T = 25°C, unless otherwise specified
j
Reverse Diode
Inverse diode continuous forward current
33
-
-
-
-
A
I
S
T = 25 °C
C
Inverse diode direct current,pulsed
180
I
FM
T = 25 °C
C
Inverse diode forward voltage
-
-
-
1.1
75
0.15
1.7
V
V
SD
V
= 0 V, I = 90 A
F
GS
Reverse recovery time
V = 30 V, I =I , di /dt = 100 A/μs
115 ns
t
rr
R
F
S
F
Reverse recovery charge
V = 30 V, I =I , di /dt = 100 A/μs
0.25 μC
Q
rr
R
F
S
F
Sensor Characteristics
For temperature sensing, i.e. temperature protection, please consider application note
"Temperature sense concept - Speed TEMPFET.
For short circuit protection please consider application note "Short circuit behaviour of
the Speed TEMPFET family.
All application notes are available athttp://www.infineon.com/tempfet/
Forward voltage
= 5 mA, T = -40...+150 °C
V
V
AK(on)
I
-
-
1.3
-
1.4
0.9
AK(on)
j
I
= 1.5 mA, T = 150 °C
j
AK(on)
Sensor override
t = 100 μs, T = -40...+150 °C
-
-
-
-
-
-
10
P
j
Forward current
T = -40...+150 °C
j
5
mA
I
AK(on)
Sensor override
600
t = 100 μs, T = -40...+150 °C
P
j
Data Sheet
5
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
-
typ.
max.
at T = 25°C, unless otherwise specified
Sensor Characteristics
Temperature sensor leakage current
j
-
-
4
-
μA
μs
I
AK(off)
T = 150 °C
j
1)
100
Min. reset pulse duration
t
reset
T = -40...+150 °C, I
= 0.3 mA,
j
AK(on)
V
V
<0.5V
AK(Reset)
Recovery time
1)2)
-
-
150
t
AK
recovery
T = -40...+150 °C, I
= 0.3 mA
j
AK(on)
Characteristics
Holding current, V
= 5V
mA
I
AK(off)
AK(hold)
T = 25 °C
0.05
0.05
-
-
0.5
0.3
j
T = 150 °C
j
Thermal trip temperature
= 5V
150
0.5
0.5
160
170 °C
T
TS(on)
V
TS
Turn-off time (Pin G+A and K+S connected)
= 5V, I = 2 mA
-
-
2.5 μs
t
off
V
TS
TS(on)
Reset voltage
T = -40...+150°C
-
V
V
AK(reset)
j
Sensor recovery behaviour:
S e n s o r R E S E T
tre s e t
V A K [V ]
5
4
0
tre c o v e ry
S e n s o r O N R e s e t
O F F
1
See diagram Sensor recovery behaviour
2
Time after reset pulse until V
reaches 4V again
AK
Data Sheet
6
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
1 Maximum allowable power dissipation
2 Drain current
I = f(T ); V 4.5V
P
= f(T )
tot
C
D
C
GS
130
W
40
A
110
100
90
80
70
60
50
40
30
20
10
30
25
20
15
10
5
0
0
°C
°C
-40
0
40
80
120
180
0
20 40 60 80 100 120 140
180
T
T
C
C
3 Typ. transient thermal impedance
4 Transient thermal impedance
Z = f (t )
thJC
2
Z
=f(t ) @ 6 cm cooling area
thJA
p
p
Parameter: D=t /T
parameter : D = t /T
p
p
10 1
10 2
K/W
K/W
10 0
D=0.5
D=0.5
10 1
0.2
0.1
10 -1
0.2
0.05
0.1
0.02
0.01
10 -2
0.05
10 0
0.02
10 -3
0.01
Single pulse
Single pulse
10 -1
10 -4
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1
10 3
10 2
s
s
t
p
t
p
Data Sheet
7
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
5 Safe operating area
I =f(V ); D=0.01; T =25°C
6 Typ. output characteristic
I = f(V ); T =25°C
D
DS
C
D
DS
j
Parameter: V
GS
10 3
120
7V
10V
A
A
6V
5V
Rdson=Vds/Id
tp=10μs
100μs
10 2
80
60
40
20
4.5V
4V
1ms
10 1
10ms
3.5V
3V
10 0
10 0
0
0
10 1
10 2
1
2
4
V
V
V
V
DS
DS
7 On-state resistance
= f(T ); I =12A; V = 4.5V
8 On-state resistance
R = f(T ); I =12A; V = 10V
ON
R
ON
j
D
GS
j
D
GS
60
40
m
m
max
max
50
45
40
35
30
25
20
15
10
5
30
25
20
15
10
5
typ.
typ.
0
0
°C
°C
-50 -25
0
25 50 75 100 125
175
-50 -25
0
25 50 75 100 125
175
T
j
T
j
Data Sheet
8
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
9 Typ. transfer characteristics
10 Typ. input threshold voltage
I = f(V ); V = 12V; T = 25°C
V
= f(Tj); V =V
DS GS
D
GS
DS
j
GS(th)
Parameter: I
D
70
A
2.4
V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
40
30
20
10
0
90mA
9mA
0.9mA
90μA
0.0
V
0
1
2
3
5
°C
-50 -25
0
25 50 75 100 125
175
V
T
GS
j
11 Typ. capacitances
12 Typ. forward charcteristics of
reverse diode I = f(V
C = f(V ); V =0 V, f=1 MHz
)
SD
DS
GS
F
t = 80μs (spread); Parameter: T
p
j
10 1
10 2
A
150°C
nF
25°C
10 1
10 0
10 -1
Ciss
10 0
Coss
Crss
10 -1
V
V
0
4
8
12 16 20 24 28 32
40
DS
0.0
0.2
0.4
0.6
0.8
1.0
1.4
V
V
SD
Data Sheet
9
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
13 Typ. gate charge
= f(Q ); I
14 Drain-source break down voltage
V
= 45 A
Gate D puls
V
= f(T )
GS
(BR)DSS
j
BTS 247 Z
16
V
66
V
12
10
8
62
60
58
56
54
52
V
0,2
DS max
0,8 VDS max
6
4
2
0
50
0
10 20 30 40 50 60 70 80
100
°C
-40
0
40
80
120
180
nC
Q
T
Gate
j
Data Sheet
10
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Package Outlines
1
Package Outlines
4.4
±0.2
10
±0.1
1.27
B
0...0.3
A
8.5 1)
0.05
2.4
0.1
0...0.15
4 x 1.7
±0.1
5 x 0.8
M
0.25
A B
0.1 B
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
GPT09062
Figure 1
PG-TO263-5-2
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
For further information on alternative packages, please visit our website:
Dimensions in mm
http://www.infineon.com/packages.
Data Sheet
11
Rev.1.4, 2013-07-26
Speed TEMPFET
BTS247Z
Revision History
2
Revision History
Revision
Date
Changes
1.4
2013-07-26
page 1, 11: updated package name and package drawing:
PG-TO220-5-62 to PG-TO263-5-2 (SMD)
page 1, 11/12: removed packages: PG-TO220-5-3 (THD, staggered leads) and
PG-TO220-5-43 (THD, straight leads);
page 1: added sales name;
page 8: updated description figure 5
1.3
1.2
1.1
2009-12-04
2009-07-31
2008-11-10
updated package drawing of PG-TO220-5-62
removed 100ms and DC line in SOA diagram
all pages:
added new Infineon logo
Initial version of RoHS-compliant derivate of the BTS247Z
Page 1 and 12: added RoHS compliance statement and Green product feature
Page 1, 11 and 12: Package changed to RoHS compliant version
page 13: added Revision history
page 14: update of disclaimer
Data Sheet
12
Rev.1.4, 2013-07-26
Edition 2013-07-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
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