BTS409L1 E3062A [INFINEON]

高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。;


型号：	BTS409L1 E3062A
厂家：	Infineon
描述：	高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。开关
文件：	总13页 (文件大小：391K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PROFET BTS409L1

Smart High-Side Power Switch

Product Summary

Overvoltage protection

V_bb(AZ)

5.0 ... 34 V

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

bb(on)

200

2.3

m

Features

L(ISO)

L(SCr)



Overload protection

Current limitation

Short circuit protection

Thermal shutdown

Overvoltage protection (including load dump)

Fast demagnetization of inductive loads

Reverse battery protection

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

PG-TO263-5-2

)



Open drain diagnostic output

Open load detection in ON-state

CMOS compatible input

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

Green Product (RoHS compliant)

AEC Qualified

Application



C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic



feedback, monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection

functions.

+ V

Voltage

source

Gate

Overvoltage

protection

Current

limit

protection

V_Logic

OUT

Limit for

unclampe

ind. loads

Voltage

sensor

Charge

Level

Temperature

sensor

Rectifier

Open load

Short to Vbb

detection

Load

Logic

ESD

GND



PROFET

GND

Load GND

Signal GND

With external current limit (e.g. resistor R

=150 ) in GND connection, resistor in series with ST

GND

connection, reverse load current limited by connected load.

Data Sheet

2013-10-10

BTS409L1

Symbol

GND

Function

Logic ground

Input, activates the power switch in case of logical high signal

Positive power supply voltage,

the tab is shorted to this pin

Diagnostic feedback, low on failure

Output to the load

OUT

(Load, L)

Data Sheet

2013-10-10

BTS409L1

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 4)

V_bb

Supply voltage for short circuit protection

T_{j Start}=-40 ...+150°C

Load dump protection²⁾V_LoadDump= U_A+ V_s, U_A= 13.5 V V_{Load dump}

R_I³⁾= 2 , R_L= 5.3 , t_d= 200 ms, IN= low or high

Load current (Short circuit current, see page 5)

Operating temperature range

Storage temperature range

I_L

self-limited

-40 ...+150

-55 ...+150

T_j

T_stg

P_tot

°C

Power dissipation (DC), T_C 25 °C

Inductive load switch-off energy dissipation, single pulse

V_bb=12V, T_j,start=150°C, T_C=150°C const.

I_L= 2.3 A, Z_L= 98mH, 0 : E_AS

IN: V_ESD

all other pins:

335

Electrostatic discharge capability (ESD)

(Human Body Model)

1.0

2.0

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993

Input voltage (DC)

V_IN

I_IN

I_ST

-10 ... +16

2.0

Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 7

5.0

Thermal Characteristics

Parameter and Conditions

Symbol

chip - case: R_thJC

Values

typ

Unit

min

max

K/W

Thermal resistance

junction - ambient (free air):

SMD version, device on PCB⁵⁾:

thJA

Supply voltages higher than V_bb(AZ)require an external current limit for the GND and status pins, e.g. with a

150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the

protection of the input is integrated.

R = internal resistance of the load dump test pulse generator

V_{Load dump}is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm²(one layer, 70m thick) copper area for V

connection. PCB is vertical without blown air.

Data Sheet

2013-10-10

BTS409L1

Electrical Characteristics

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5)

R_ON

I_L= 1.8 A

T=25 °C:

160

320

2.3

200

400

m

T=150 °C:

Nominal load current, ISO Norm (pin 3 to 5)

1.8

V_ON= 0.5 V, T = 85 °C

I_L(ISO)

Output current (pin 5) while GND disconnected or

I_L(GNDhigh)

GND pulled up, V =30 V, V = 0, see diagram

page 8

Turn-on time

Turn-off time

to 90% V_OUT: t_on

to 10% V_OUT: t_off

200

400

s

R_L= 12 , T =-40...+150°C

Slew rate on

10 to 30% V_OUT, R_L= 12 , T =-40...+150°C

Slew rate off

70 to 40% V_OUT, R_L= 12 , T =-40...+150°C

dV /dt_on

-dV/dt_off

0.1

1 V/s

Operating Parameters

Operating voltage⁶⁾

Undervoltage shutdown

Undervoltage restart

T =-40...+150°C: V_bb(on)

5.0

3.5

T =-40...+150°C: V_bb(under)

5.0

T =-40...+25°C: V_{bb(u rst)}

5.0

7.0

T =+150°C:

Undervoltage restart of charge pump

V_bb(ucp)

5.6

0.2

7.0

see diagram page 12

T =-40...+150°C:

Undervoltage hysteresis

V_bb(under)= V_{bb(u rst)}- V_bb(under)

V_bb(under)

Overvoltage shutdown

Overvoltage restart

Overvoltage hysteresis

Overvoltage protection⁷⁾

I_bb=40 mA

T =-40...+150°C: V_bb(over)

T =-40...+150°C: V_{bb(o rst)}

T =-40...+150°C: V_bb(over)

0.5

T =-40...+150°C: V_bb(AZ)

Standby current (pin 3)

V_IN=0

I_bb(off)

A

T_j=-40...+25°C:

T_j= 150°C:

At supply voltage increase up to V = 5.6 V typ without charge pump, V

V - 2 V

OUT

See also V

in table of protection functions and circuit diagram page 8.

ON(CL)

Data Sheet

2013-10-10

BTS409L1

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

typ

max

I_L(off)

I_GND

A

Leakage output current (included in I_bb(off)

VIN=0

)

Operating current (Pin 1)⁸⁾, V_IN=5 V,

_Tj=-40...+150°C

1.8

3.5

Protection Functions⁹⁾

Initial peak short circuit current limit (pin 3 to 5)

I_L(SCp)

T_j=-40°C:

5.5

4.5

9.5

7.5

T_j=25°C:

T_j=+150°C:

Repetitive short circuit shutdown current limit

I_L(SCr)

T_j= T_jt(see timing diagrams, page 10)

Output clamp (inductive load switch off)

at V_OUT= V_bb- V_ON(CL)

I_L= 40 mA: V_ON(CL)

150

°C

Thermal overload trip temperature

T_jt

Thermal hysteresis

Reverse battery (pin 3 to 1) ¹⁰⁾

T_jt

-V_bb

Diagnostic Characteristics

Open load detection current

T_j=-40 °C: I_{L (OL)}

200

150

(on-condition)

T_j=25 ..150°C:

Open load detection voltage¹¹⁾(off-condition)

T_j=-40..150°C:

V_OUT(OL)

Internal output pull down

(pin 5 to 1), V_OUT=5 V, T_j=-40..150°C

R_O

k

Add I , if I > 0, add I , if V >5.5 V

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not

designed for continuous repetitive operation.

Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal

operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature

protection is not active during reverse current operation! Input and Status currents have to be limited (see

max. ratings page 2 and circuit page 8).

10)

11)

External pull up resistor required for open load detection in off state.

Data Sheet

2013-10-10

BTS409L1

Parameter and Conditions

Symbol

Values

Unit

at Tj = 25 °C, V = 12 V unless otherwise specified

min

2.5

typ

max

Input and Status Feedback¹²⁾

Input resistance

see circuit page 7

R_I

3.5

k

Input turn-on threshold voltage

Input turn-off threshold voltage

Input threshold hysteresis

T_j=-40..+150°C: V_IN(T+)

T_j=-40..+150°C: V_IN(T-)

 V_IN(T)

1.7

1.5

3.5

0.5

V

Off state input current (pin 2), V_IN= 0.4 V,

T_j=-40..+150°C

I_IN(off)

A

s

On state input current (pin 2), V_IN= 3.5 V,

T_j=-40..+150°C

I_IN(on)

Delay time for status with open load after switch

t_{d(ST OL4)}

100

400

800

off

(see timing diagrams, page 11), T_j=-40..+150°C

Status invalid after positive input slope

t_d(ST)

250

600

s

(open load)

T =-40 ... +150°C:

Status output (open drain)

Zener limit voltage T =-40...+150°C, I_ST= +1.6 mA: V_ST(high)

5.4

6.1

0.4

0.6

ST low voltage

T =-40...+25°C, I_ST= +1.6 mA: V_ST(low)

T = +150°C, I_ST= +1.6 mA:

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Data Sheet

2013-10-10

BTS409L1

Truth Table

Input-

level

Output Status

level

Normal

operation

Open load

14)

)

H (L

)

15)

Short circuit

to V

16)

H (L

)

Overtem-

perature

Under-

voltage

Overvoltage

L = "Low" Level

H = "High" Level

X = don't care

Z = high impedance, potential depends on external circuit

Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)

Terms

Status output

+5V

ST(ON)

OUT

PROFET

ESD-

GND

ESD-Zener diode: 6.1 V typ., max 5 mA;

< 380  at 1.6 mA, ESD zener diodes are not

GND

OUT

ST(ON)

GND

to be used as voltage clamp at DC conditions.

Operation in this mode may result in a drift of the zener

voltage (increase of up to 1 V).

Input circuit (ESD protection)

Inductive and overvoltage output clamp

+ V

ESD-ZD

GND

OUT

ESD zener diodes are not to be used as voltage clamp

at DC conditions. Operation in this mode may result in

a drift of the zener voltage (increase of up to 1 V).

PROFET

GND

clamped to 47 V typ.

13)

Power Transistor off, high impedance

with external resistor between pin 3 and pin 5

14)

15)

An external short of output to V_bb, in the off state, causes an internal current from output to ground. If R_GND

is used, an offset voltage at the GND and ST pins will occur and the V_{ST low}signal may be errorious.

16)

Low resistance to V may be detected in ON-state by the no-load-detection

Data Sheet

2013-10-10

BTS409L1

GND disconnect

Overvolt. and reverse batt. protection

+ V

OUT

PROFET

Logic

GND

PROFET

GND

Any kind of load. In case of Input=high is V_OUT V_IN- V_IN(T+)

Signal GND

Due to V_GND>0, no V_ST= low signal available.

= 6.2 V typ., V = 47 V typ., R

= 15 k, R = 3.5 k typ.

= 150 ,

GND

GND disconnect with GND pull up

Open-load detection

ON-state diagnostic condition: V_ON< R_ON* I_L(OL); IN

high

OUT

PROFET

+ V

GND

OUT

Any kind of load. If V_GND> V_IN- V_IN(T+)device stays off

Open load

detection

Logic

unit

Due to V_GND>0, no V_ST= low signal available.

disconnect with energized inductive

load

OFF-state diagnostic condition: V_OUT> 3 V typ.; IN low

high

OUT

PROFET

EXT

GND

OFF

OUT

Open load

detection

Logic

unit

Normal load current can be handled by the PROFET

itself.

Signal GND

Data Sheet

2013-10-10

BTS409L1

disconnect with charged external

Maximum allowable load inductance for

inductive load

a single switch off

L = f (I_L); T_j,start= 150°C,T_C= 150°C const.,

V_bb= 12 V, R_L= 0 

L [mH]

high

10000

OUT

PROFET

GND

1000

100

If other external inductive loads L are connected to the PROFET,

additional elements like D are necessary.

Inductive Load switch-off energy

dissipation

Load

OUT

PROFET

GND

[A]

{

Transient thermal impedance chip case

Z_thJC= f(t_p)Z_thJC[K/W]

Energy stored in load inductance:

E = / ·L·I

While demagnetizing load inductance, the energy

dissipated in PROFET is

E_AS= E_bb+ E_L- E_R= V_ON(CL)·i_L(t) dt,



with an approximate solution for R_L 0:

I_L·L

2·R_L

I_L·R_L

|V_OUT(CL)|

E =

·(V_bb+|V_OUT(CL)|)· ln (1+

)

0.5

0.2

0.1

0.05

0.02

0.01

0.1

0.01

1E-5 1E-4

1E-3 1E-2

1E-1

1E0

1E1

1E2

[s]

Data Sheet

2013-10-10

BTS409L1

Timing diagrams

Figure 1a: V turn on:

Figure 2b: Switching an inductive load

d(ST)

OUT

ST open drain

L(OL)

proper turn on under all conditions

*) if the time constant of load is too large, open-load-status may

occur

Figure 2a: Switching a lamp,

Figure 3a: Short circuit

shut down by overtempertature, reset by cooling

L(SCp)

OUT

L(SCr)

Heating up may require several milliseconds, depending on

external conditions

Data Sheet

2013-10-10

BTS409L1

Figure 4a: Overtemperature:

Figure 5b: Open load: detection in ON-state, open

load occurs in on-state

Reset if T <T

d(ST OL1)

d(ST OL2)

OUT

normal

open

t_{d(ST OL1)}= 30 s typ., t_{d(ST OL2)}= 20 s typ

Figure 5a: Open load: detection in ON-state, turn

Figure 5c: Open load: detection in ON- and OFF-state

on/off to open load

(with R

), turn on/off to open load

EXT

d(ST OL4)

d(ST)

OUT

open

The status delay time t_{d(ST OL4)}allows to ditinguish between

the failure modes "open load" and "overtemperature".

Data Sheet

2013-10-10

BTS409L1

Figure 6a: Undervoltage:

Figure 7a: Overvoltage:

ON(CL)

bb(over)

bb(o rst)

bb(u cp)

bb(under)

bb(u rst)

OUT

ST open drain

Figure 6b: Undervoltage restart of charge pump

V_ON(CL)

V_on

V _bb(over)

V_{bb(u rst)}

bb(o rst)

bb(u cp)

bb(under)

V_bb

charge pump starts at V_bb(ucp)=5.6 V typ.

Data Sheet

2013-10-10

BTS409L1

Published by

Infineon Technologies AG,

Bereichs Kommunikation

D-81726 München

Package and Ordering Code

All dimensions in mm

PG-TO263-5-2

Ordering code

SP001104814

BTS409L1 E3062A

Attention please!

The information herein is given to describe certain

components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change

reserved.

We hereby disclaim any and all warranties, including

but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated

herein.

Infineon Technologies is an approved CECC

manufacturer.

Information

For further information on technology, delivery terms

and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our

Infineon Technologies Representatives worldwide (see

address list).

Warnings

Due to technical requirements components may

contain dangerous substances. For information on the

types in question please contact your nearest Infineon

Technologies Office.

Infineon Technologies Components may only be used

in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to

cause the failure of that life-support device or system,

or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended

to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life.

If they fail, it is reasonable to assume that the health of

the user or other persons may be endangered.

Data Sheet

2013-10-10

BTS409L1 E3062A [INFINEON]

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