BTS410E2E3062ANTMA1 [INFINEON]
Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, MOS, PSSO4, TO-220AB, 5 PIN;
| 型号： | BTS410E2E3062ANTMA1 |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 1 Driver, 1.8A, MOS, PSSO4, TO-220AB, 5 PIN 驱动 接口集成电路 驱动器 |
| 文件： | 总15页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS410E2
Smart High-Side Power Switch
Product Summary
Overvoltage protection
Vbb(AZ)
65
V
V
4.7 ... 42 V
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
bb(on)
Features
R
220
1.8
5
m
A
ON
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
I
I
L(ISO)
L(SCr)
A
PG-TO263-5-2
1
)
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V protection
bb
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
3
5
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
VLogic
OUT
Limit for
unclamped
ind. loads
Charge pump
Level shifter
Voltage
sensor
Temperature
sensor
Rectifier
IN
2
4
Open load
detection
Load
Logic
ESD
ST
Short circuit
detection
PROFET
GND
1
Load GND
Signal GND
1
)
With external current limit (e.g. resistor R
=150 ) in GND connection, resistors in series with IN and ST
GND
connections, reverse load current limited by connected load.
Data Sheet
1
2013-10-15
BTS410E2
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Values
65
Unit
V
Supply voltage (overvoltage protection see page 3)
2
4
)
)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V VLoad dump
100
V
3
)
RI = 2 , RL= 6.6 , td= 400 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
Tstg
Ptot
°C
Power dissipation (DC), TC 25 °C
50
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.
IL = 1.8 A, ZL = 2.3H, 0 : EAS
IN: VESD
all other pins:
4.5
J
Electrostatic discharge capability (ESD)
(Human Body Model)
1
2
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
VIN
IIN
IST
-0.5 ... +6
5.0
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
mA
5.0
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
typ
Unit
min
--
max
2.5
75
K/W
Thermal resistance
--
--
35
R
--
--
junction - ambient (free air):
SMD version, device on PCB5):
thJA
--
2
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
4
5
)
)
)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for V
connection. PCB is vertical without blown air.
bb
Data Sheet
2
2013-10-15
BTS410E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
RON
IL = 1.6 A
T=25 °C:
j
190
390
220
440
m
T=150 °C:
j
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, T = 85 °C
IL(ISO)
1.6
--
1.8
--
--
1
A
C
Output current (pin 5) while GND disconnected or
IL(GNDhigh)
mA
GND pulled up, V =30 V, V = 0, see diagram
bb
IN
page 7, T =-40...+150°C
j
Turn-on time
Turn-off time
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
12
5
--
--
125
85
s
RL = 12 , T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 , T =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , T =-40...+150°C
dV /dton
-dV/dtoff
--
--
--
--
3 V/s
6 V/s
j
j
Operating Parameters
Operating voltage 6
T =-40...+150°C: Vbb(on)
4.7
2.9
2.7
--
--
--
42
V
V
)
j
Undervoltage shutdown
T =25°C: Vbb(under)
4.5
4.7
j
T =-40...+150°C:
j
Undervoltage restart
T =-40...+150°C: Vbb(u rst)
--
--
--
4.9
6.0
V
V
j
Undervoltage restart of charge pump
see diagram page 13
Vbb(ucp)
5.6
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
--
0.1
--
V
Overvoltage shutdown
Overvoltage restart
T =-40...+150°C: Vbb(over)
42
40
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
Overvoltage hysteresis
T =-40...+150°C: Vbb(over)
0.1
70
--
j
7
)
Overvoltage protection
Ibb=4 mA
T =-40...+150°C: Vbb(AZ)
j
65
--
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj= 150°C:
--
--
10
18
15
25
A
A
IL(off)
--
--
20
Leakage output current (included in Ibb(off)
VIN=0
)
6
)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
V - 2 V
bb
bb
OUT
7
)
Meassured without load. See also V
in table of protection functions and circuit diagram page 7.
ON(CL)
Data Sheet
3
2013-10-15
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
--
typ
max
8
Operating current (Pin 1) ), VIN=5 V,
IGND
1
2.1 mA
Tj =-40...+150°C
Protection Functions9)
10
)
Initial peak short circuit current limit (pin 3 to 5) ,
( max 450 s if VON > VON(SC)
IL(SCp)
)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
9
--
4
--
12
--
23
--
15
A
Repetitive overload shutdown current limit
VON= 8 V, Tj = Tjt (see timing diagrams, page 11)
Short circuit shutdown delay after input pos. slope
IL(SCr)
--
--
5
--
A
VON > VON(SC)
,
Tj =-40..+150°C: td(SC)
--
450
s
min value valid only, if input "low" time exceeds 60 s
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)
61
--
68
--
73
75
V
IL= 1 A, Tj =-40..+150°C:
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
Tjt
--
150
--
8.5
--
--
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 11
)
Tjt
-Vbb
10
--
--
--
32
V
Diagnostic Characteristics
Open load detection current
IL (OL)
mA
(on-condition)
Tj=-40 ..150°C:
2
--
150
8
)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
9
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
11
)
)
Short circuit current limit for max. duration of t
=450 s, prior to shutdown
d(SC) max
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
Data Sheet
4
2013-10-15
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Input and Status Feedback12
)
Input turn-on threshold voltage
Tj VIN(T+)
1.5
1.0
--
--
--
2.4
--
V
Input turn-off threshold voltage
Tj =-40. VIN(T-)
VIN(T)
IIN(off)
V
Input threshold hysteresis
0.5
--
--
V
A
A
s
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Status invalid after positive input slope
1
30
70
450
IIN(on)
10
--
25
--
td(ST SC)
(short circuit)
T =-40 ... +150°C:
j
Status invalid after positive input slope
td(ST)
300
-- 1400
s
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +50 uA: VST(high)
5.0
--
6
--
--
0.4
V
j
ST low voltage T =-40...+150°C, IST = +1.6 mA: VST(low)
j
12
)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Data Sheet
5
2013-10-15
BTS410E2
Truth Table
Input-
level
Output
level
Status
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
Open load
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
L
H
H
L
L
H
L
H
H
H
L
H
L
H
H
H
L
H
L
H
H
H
L
H
H
H
H
H
L
H
H
L
L
H
L
H
13
)
H
L
L
H
H
L
L
L
L
L
L
Short circuit
to GND
Short circuit
H
H
14
)
14)
14)
to V
bb
H (L )
H (L
)
H (L
)
Overtem-
perature
Under-
voltage
Overvoltage
L
L
L
L
H
H
H
H
L
L
H
H
H
H
L
L
L
L15
H
H
H
H
15)
)
15)
15)
L
L
L
L
L
L
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Status output
I
+5V
bb
3
I
IN
V
bb
IN
R
2
I
L
V
ST(ON)
ON
ST
OUT
PROFET
I
5
ST
ST
4
V
GND
V
ST
IN
ESD-
ZD
V
1
I
bb
V
GND
OUT
R
GND
GND
ESD-Zener diode: 6 V typ., max 5 mA;
< 250 at 1.6 mA, ESD zener diodes are not
R
ST(ON)
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Input circuit (ESD protection)
R
I
IN
ESD-
ZDI1 ZDI2
I
I
GND
ZD 6 V typ., ESD zener diodes are not to be used as
I1
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
13
)
Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14
15
)
)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
No current sink capability during undervoltage shutdown
Data Sheet
6
2013-10-15
BTS410E2
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V
bb
+ V
bb
V
ON
OUT
V
ON
Short circuit
detection
Logic
unit
ON
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V
bb
V
Z
GND disconnect
VON
OUT
3
PROFET
GND
V
bb
IN
2
OUT
PROFET
V
ON
clamped to 68 V typ.
5
ST
4
GND
1
Overvolt. and reverse batt. protection
V
V
V
V
bb
IN
ST
GND
+ V
bb
V
Z2
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+)
.
RIN
IN
Due to VGND >0, no VST = low signal available.
Logic
GND disconnect with GND pull up
ST
RST
V
Z1
3
PROFET
V
GND
bb
IN
2
RGND
OUT
PROFET
5
Signal GND
ST
4
V
Z1
= 6.2 V typ., V = 70 V typ., R
= 150 , R ,
GND IN
Z2
GND
1
R
= 15 k
ST
V
V
V
V
IN ST
GND
bb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Data Sheet
7
2013-10-15
BTS410E2
with an approximate solution for RL 0:
V
disconnect with energized inductive
bb
load
IL·L
2·RL
IL·RL
|VOUT(CL)|
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
3
Maximum allowable load inductance for
a single switch off
V
high
bb
IN
2
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
OUT
PROFET
5
L [mH]
ST
4
GND
1
10000
V
bb
Normal load current can be handled by the PROFET
itself.
1000
100
10
V
disconnect with charged external
bb
inductive load
S
3
V
high
IN
bb
2
OUT
PROFET
5
D
ST
4
GND
1
V
bb
1
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
2
3
4
5
6
I
[A]
L
Inductive Load switch-off energy
dissipation
E
bb
E
AS
E
Load
V
bb
IN
OUT
PROFET
=
ST
E
L
GND
L
Z
{
R
L
L
E
R
Energy stored in load inductance:
2
L
1
E = / ·L·I
L
2
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
Data Sheet
8
2013-10-15
BTS410E2
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
10
1
D=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
[s]
t
p
Data Sheet
9
2013-10-15
BTS410E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 in GND connection, protection against loss of
ground
Type
BTS 412 B2 410D2 410E2 410F2 410G2 410H2 307
308
Logic version
B
D
E
F
G
H
Overtemperature protection with hysteresis
T >150 °C, latch function16 17
X
X
X
X
X
X
)
)
j
X
X
X
T >150 °C, with auto-restart on cooling
j
Short circuit to GND protection
switches off when V >3.5 V typ. and Vbb> 7 V
typ (when first turned on after approx. 150 s)
X
X
ON
)
16
16)
switches off when V >8.5 V typ.
(when first turned on after approx. 150 s)
X
X
X
X
X
X
X
X
ON
X
X
Achieved through overtemperature protection
X
X
Open load detection
in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart18
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
)
Status feedback for
overtemperature
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
X
X
X
-
X
X
X
X
-
short circuit to GND
X
19)
X
X
19)
-
19)
19
)
short to V
bb
-
-
-
-
open load
X
X
X
X
-
X
-
X
-
undervoltage
overvoltage
Status output type
CMOS
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to V - V
bb ON(CL)
X
X
X
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
X
X
X
X
X
X
X
X
16
)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and t
With latch function. Reseted by a) Input low, b) Undervoltage
No auto restart after overvoltage in case of short circuit
.
d(SC)
17
18
19
)
)
)
Low resistance short V to output may be detected in ON-state by the no-load-detection
bb
Data Sheet
10
2013-10-15
BTS410E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
t
d(bb IN)
t
d(ST)
V
ST
bb
*)
V
OUT
V
OUT
A
I
L
ST open drain
I
L(OL)
t
t
A
in case of too early V =high the device may not turn on (curve A)
td(bb IN) approx. 150 s
*) if the time constant of load is too large, open-load-status may
occur
IN
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
V
V
OUT
OUT
t
d(SC)
I
I
L
L
t
t
Data Sheet
11
2013-10-15
BTS410E2
t
approx. -- s if Vbb - VOUT > 8.5 V typ.
d(SC)
Figure 4a: Overtemperature:
Figure 3b: Turn on into overload,
Reset if T <T
j
jt
IN
IN
ST
I
L
I
L(SCp)
I
L(SCr)
V
OUT
T
J
ST
t
t
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
t
d(ST)
ST
ST
V
OUT
V
OUT
I
L
open
I
L
**)
t
t
**) current peak approx. 20 s
Data Sheet
12
2013-10-15
BTS410E2
Figure 5b: Open load: detection in ON-state, open
Figure 6b: Undervoltage restart of charge pump
load occurs in on-state
V
ON(CL)
V
on
IN
t
t
d(ST OL1)
d(ST OL2)
ST
V
bb(over)
V
OUT
V
V
bb(o rst)
bb(u rst)
V
normal
bb(u cp)
normal
open
I
L
V
bb(under)
V
bb
t
charge pump starts at Vbb(ucp) =5.6 V typ.
td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ
Figure 7a: Overvoltage:
Figure 6a: Undervoltage:
IN
IN
V
V
V
ON(CL)
bb(over)
bb(o rst)
V
bb
V
bb
V
V
V
bb(u cp)
bb(under)
bb(u rst)
V
OUT
V
OUT
ST
ST open drain
t
t
Data Sheet
13
2013-10-15
BTS410E2
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
bb
V
bb(o rst)
Output short to GND
V
OUT
short circuit shutdown
I
L
ST
t
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
Data Sheet
14
2013-10-15
BTS410E2
Package and Ordering Code
Published by
Infineon Technologies AG,
D-81726 München
© Infineon Technologies AG 2013
All Rights Reserved.
All dimensions in mm
PG-TO263-5-2
Ordering code
SP001104816
BTS410E2 E3062A
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
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Infineon Technologies Components may only be used in life-
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components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
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assume that the health of the user or other persons may be
endangered.
Data Sheet
15
2013-10-15
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