BTS426L1 E3062A [INFINEON]
高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。;
| 型号： | BTS426L1 E3062A |
| 厂家： | 
Infineon |
| 描述： | 高边功率开关，集成了垂直功率 FET，提供嵌入式保护和诊断功能。 开关 |
| 文件： | 总13页 (文件大小：545K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS426L1
Smart High-Side Power Switch
Product Summary
Overvoltage protection
Vbb(AZ)
43
V
V
5.0 ... 34 V
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
bb(on)
R
60
7.0
16
m
A
ON
Features
I
I
L(ISO)
L(SCr)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
A
PG-TO263-5-2
1
)
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V protection
bb
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
3
bb
Voltage
source
Gate
Overvoltage
protection
Current
limit
protection
VLogic
OUT
Limit for
unclamped
ind. loads
Charge pump
Level shifter
Voltage
sensor
5
Temperature
sensor
Rectifier
IN
2
Open load
Short to Vbb
detection
Load
Logic
ESD
R
4
ST
O
GND
PROFET
GND
1
Load GND
Signal GND
1
)
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST connection, reverse load
GND
current limited by connected load.
Data Sheet
1
2013-10-10
BTS426L1
Pin
1
Symbol
GND
IN
Function
-
Logic ground
2
I
Input, activates the power switch in case of logical high signal
3
V
+
Positive power supply voltage,
the tab is shorted to this pin
bb
4
5
ST
S
Diagnostic feedback, low on failure
Output to the load
OUT
O
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Values
Unit
Supply voltage (overvoltage protection see page 3)
43
34
V
V
Supply voltage for short circuit protection
Tj Start=-40 ...+150°C
Vbb
2
4
)
)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
VLoad dump
60
V
3
)
RI = 2 , RL= 1.7 , td= 200 ms, IN= low or high
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
IL
self-limited
-40 ...+150
-55 ...+150
A
Tj
Tstg
Ptot
°C
Power dissipation (DC), TC 25 °C
75
W
Inductive load switch-off energy dissipation, single pulse
V =12V, Tj,start =150°C, T =150°C const.
C
bb
IL = 7.0 A, ZL = 24mH, 0 : EAS
IN: VESD
all other pins:
0.74
J
Electrostatic discharge capability (ESD)
(Human Body Model)
1.0
2.0
kV
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
VIN
IIN
IST
-10 ... +16
2.0
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
mA
5.0
Thermal Characteristics
Parameter and Conditions
Symbol
chip - case: RthJC
Values
Unit
min
--
--
typ
max
1.67
75
K/W
Thermal resistance
--
--
34
R
thJA
junction - ambient (free air):
SMD version, device on PCB5):
2
)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 resistor in the
GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated.
3
4
5
)
)
)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for V connection. PCB is vertical
bb
without blown air.
Data Sheet
2
2013-10-10
BTS426L1
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
RON
T=25 °C:
50
100
7.0
60
m
j
T=150 °C:
j
120
Nominal load current, ISO Norm (pin 3 to 5)
5.8
--
VON = 0.5 V, T = 85 °C
IL(ISO)
--
A
C
Output current (pin 5) while GND disconnected or GND pulled
IL(GNDhigh)
--
10
mA
up, V =30 V, V = 0, see diagram page 7
bb
IN
Turn-on time
Turn-off time
IN
IN
to 90% VOUT
to 10% VOUT
:
:
ton
toff
80
80
200
230
400
450
s
RL = 12 , T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 , T =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 , T =-40...+150°C
dV /dton
-dV/dtoff
0.1
0.1
--
--
1
1
V/s
V/s
j
j
Operating Parameters
6
)
Operating voltage
T =-40...+150°C: Vbb(on)
5.0
3.5
--
--
--
--
34
V
V
V
j
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(under)
j
5.0
T =-40...+25°C: Vbb(u rst)
5.0
7.0
j
T =+150°C:
j
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
--
5.6
7.0
V
T =-40...+150°C:
j
Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
--
34
33
--
0.2
--
--
43
--
V
V
V
V
V
Overvoltage shutdown
Overvoltage restart
T =-40...+150°C: Vbb(over)
j
T =-40...+150°C: Vbb(o rst)
j
--
Overvoltage hysteresis
T =-40...+150°C: Vbb(over)
T =-40...+150°C: Vbb(AZ)
j
0.5
47
--
j
7
)
Overvoltage protection
Ibb=40 mA
42
--
Standby current (pin 3)
VIN=0
Ibb(off)
IL(off)
IGND
--
--
10
12
25
28
A
A
mA
Tj=-40...+25°C:
Tj= 150°C:
--
--
12
Leakage output current (included in Ibb(off)
)
VIN=0
8
Operating current (Pin 1) ), VIN=5 V, Tj =-40...+150°C
--
1.8
3.5
6
)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
V - 2 V
bb
bb
OUT
7
)
See also V
in table of protection functions and circuit diagram page 7.
ON(CL)
8
)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Data Sheet
3
2013-10-10
BTS426L1
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Protection Functions9)
Initial peak short circuit current limit (pin 3 to 5)
IL(SCp)
Tj =-40°C:
Tj =25°C:
21
15
11
32
25
17
43
35
24
A
A
Tj =+150°C:
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
--
16
--
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 40 mA: VON(CL)
41
150
--
47
--
53
--
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 10
)
Tjt
Tjt
-Vbb
10
--
--
--
32
V
Reverse battery voltage drop (V > V
)
bb
out
IL = -4 A
T=150 °C: -VON(rev)
j
--
mV
610
--
Diagnostic Characteristics
Open load detection current
Tj=-40 °C: IL (OL)
20
10
--
--
850
750
mA
V
(on-condition)
Tj=25 ..150°C:
Open load detection voltage11 (off-condition) Tj=-40..150°C: VOUT(OL)
2
3
4
)
Internal output pull down
(pin 5 to 1), VOUT=5 V, Tj=-40..150°C
RO
4
10
30
k
9
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault
conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive
operation.
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by
the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop
across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status
currents have to be limited (see max. ratings page 2 and circuit page 7).
10
)
11
)
External pull up resistor required for open load detection in off state.
Data Sheet
4
2013-10-10
BTS426L1
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
2.5
typ
max
Input and Status Feedback12
)
Input resistance
Tj=-40..150°C, see circuit page 6
RI
3.5
6
k
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+VIN(T+)
Tj =-40..+150°C VIN(T-)
VIN(T)
1.7
1.5
--
--
--
3.5
--
V
V
0.5
--
--
V
A
Off state input current (pin 2), VIN = 0.4 V,
Tj =-40..+150°C
IIN(off)
1
50
On state input current (pin 2), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
20
50
90
A
Delay time for status with open load after switch off
td(ST OL4)
td(ST)
100
--
520
250
1000
600
s
s
(see timing diagrams, page 11), Tj =-40..+150°C
Status invalid after positive input slope
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage
ST low voltage
T =-40...+150°C, IST = +1.6 mA: VST(high)
5.4
--
--
6.1
--
--
--
0.4
0.6
V
j
T =-40...+25°C, IST = +1.6 mA: VST(low)
j
T = +150°C, IST = +1.6 mA:
j
12
)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Data Sheet
5
2013-10-10
BTS426L1
Truth Table
Input-
level
Output
level
Status
426L1
Normal
operation
Open load
L
H
L
H
L
H
L
H
L
H
L
H
L
H
H
H
13
)
14
)
H (L )
L
H
H
H
L
L
L
L
L
L
L15
)
Short circuit to
16
)
V
bb
H (L )
H
L
H
H
H
H
Overtem-
perature
Undervoltage
Overvoltage
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
Terms
Status output
I
+5V
bb
3
I
IN
V
bb
IN
R
2
I
L
V
ST(ON)
ON
ST
OUT
PROFET
I
5
ST
ST
4
V
GND
V
ST
IN
ESD-
ZD
V
1
I
bb
V
GND
OUT
R
GND
GND
ESD-Zener diode: 6.1 V typ., max 5 mA; R
< 380 at 1.6
ST(ON)
mA, ESD zener diodes are not to be used as voltage clamp at DC
conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Input circuit (ESD protection)
R
I
IN
Inductive and overvoltage output clamp
+ V
bb
ESD-ZD
I
I
I
V
Z
GND
VON
ESD zener diodes are not to be used as voltage clamp at DC
conditions. Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
OUT
PROFET
GND
V
ON
clamped to 47 V typ.
13
)
Power Transistor off, high impedance
with external resistor between pin 3 and pin 5
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset
voltage at the GND and ST pins will occur and the VST low signal may be errorious.
14
)
15
)
16
)
Low resistance to V may be detected in ON-state by the no-load-detection
bb
Data Sheet
6
2013-10-10
BTS426L1
Overvolt. and reverse batt. protection
GND disconnect
+ V
bb
V
Z2
3
RIN
RI
IN
V
bb
IN
Logic
2
4
ST
OUT
PROFET
RST
5
V
Z1
ST
PROFET
GND
1
GND
V
V
V
V
RGND
bb
IN
ST
GND
Signal GND
V
Z1
= 6.2 V typ., V = 47 V typ., R = 150 , R = 15 k,
GND ST
Z2
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+)
.
R = 3.5 k typ.
I
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN high
3
V
bb
IN
+ V
2
bb
OUT
PROFET
5
ST
4
GND
1
V
ON
ON
V
V
V
V
IN ST
GND
bb
OUT
Open load
detection
Logic
unit
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
V
disconnect with energized inductive load
bb
3
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
V
high
bb
IN
2
OUT
PROFET
5
R
ST
EXT
4
GND
1
OFF
V
OUT
V
bb
Open load
detection
Logic
unit
R
Normal load current can be handled by the PROFET itself.
O
Signal GND
Data Sheet
7
2013-10-10
BTS426L1
V
disconnect with charged external inductive
Maximum allowable load inductance for
bb
load
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12V, RL = 0
S
3
L [mH]
V
high
bb
IN
2
10000
OUT
PROFET
5
D
ST
4
GND
1
1000
100
10
V
bb
If other external inductive loads L are connected to the PROFET, additional
elements like D are necessary.
Inductive Load switch-off energy dissipation
E
bb
E
AS
E
Load
V
bb
IN
OUT
PROFET
=
1
ST
E
L
GND
2
7
12
17
L
I
[A]
Z
{
L
R
L
L
E
R
Typ. transient thermal impedance chip case
ZthJC = f(tp)ZthJC [K/W]
10
Energy stored in load inductance:
2
L
1
E = / ·L·I
L
2
While demagnetizing load inductance, the energy dissipated in
PROFET is
EAS= Ebb
ON(CL)·iL(t) dt,
+ E - E = V
L
R
1
with an approximate solution for RL 0:
IL·L
2·RL
IL·RL
|VOUT(CL)|
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.1
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
t
[s]
p
Data Sheet
8
2013-10-10
BTS426L1
Transient thermal impedance chip ambient air
ZthJA = f(tp)ZthJA [K/W]
100
10
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
1
0.1
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 1E2 1E3
t
[s]
p
Data Sheet
9
2013-10-10
BTS426L1
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: V turn on:
bb
IN
IN
V
t
d(ST)
bb
ST
*)
V
V
OUT
OUT
ST open drain
I
L
I
L(OL)
t
t
proper turn on under all conditions
*) if the time constant of load is too large, open-load-status may occur
Figure 2a: Switching a lamp,
Figure 3a: Short circuit
shut down by overtempertature, reset by cooling
IN
IN
ST
I
L
I
L(SCp)
V
I
OUT
L(SCr)
I
L
t
ST
t
Data Sheet
10
2013-10-10
BTS426L1
Heating up may require several milliseconds, depending on external conditions
Figure 5b: Open load: detection in ON-state, open load occurs in
on-state
Figure 4a: Overtemperature:
Reset if T <T
j
jt
IN
IN
t
t
d(ST OL1)
d(ST OL2)
ST
ST
V
OUT
V
OUT
normal
normal
open
I
L
T
J
t
td(ST OL1) = 20 s typ., td(ST OL2) = 10 s typ
t
Figure 5c: Open load: detection in ON- and OFF-state (with
R
EXT
), turn on/off to open load
Figure 5a: Open load: detection in ON-state, turn on/off to open
load
IN
IN
t
ST
d(ST)
t
t
d(ST OL4)
d(ST)
ST
V
V
OUT
OUT
I
L
open
I
L
t
open
t
The status delay time td(ST OL4) allows to ditinguish between
the failure modes "open load" and "overtemperature".
Data Sheet
11
2013-10-10
BTS426L1
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
V
V
V
ON(CL)
bb(over)
bb(o rst)
V
bb
bb
V
V
bb(u cp)
bb(under)
V
bb(u rst)
V
OUT
V
OUT
ST
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
V
ON(CL)
V
on
V
bb(over)
V
V
bb(o rst)
bb(u rst)
V
bb(u cp)
V
bb(under)
V
bb
charge pump starts at Vbb(ucp) =5.6 V typ.
Data Sheet
12
2013-10-10
BTS426L1
Published by
Infineon Technologies AG,
D-81726 München
Package and Ordering Code
All dimensions in mm
© Infineon Technologies AG 2013
All Rights Reserved.
PG-TO263-5-2
Ordering code
SP001104820
BTS426L1 E3062A
Attention please!
The information herein is given to describe certain components and shall
not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to
warranties of non-infringement, regarding circuits, descriptions and charts
stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and
prices please contact your nearest Infineon Technologies Office in
Germany or our Infineon Technologies Representatives worldwide (see
address list).
Warnings
Due to technical requirements components may contain dangerous
substances. For information on the types in question please contact your
nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support
devices or systems with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected
to cause the failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
Data Sheet
13
2013-10-10
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