BTS50025-1TEA_技术文档

BTS50025-1TEA

Smart High-Side Power Switch

1

Overview

Features

•

One channel device

Low Stand-by current

Current controlled input

Reverse battery protection

Electrostatic discharge protection (ESD)

Optimized Electromagnetic Compatibility (EMC)

Compatible to cranking pulses (Severe cold start E11 in LV124)

Embedded diagnostic functions

Embedded protection functions

Green Product (RoHS compliant)

Applications

•

Suitable for resistive, inductive and capacitive loads

Replaces electromechanical relays, fuses and discrete circuits

Most suitable for application with high current loads, such heating system, fan and pump

PWM applications with low frequency

Product validation

Qualified for automotive applications. Product validation according to AEC-Q100.

Description

The BTS50025-1TEA is a 2.5mΩ single channel Smart High-Side Power Switch, embedded in a PG-TO-252-5-11

package, providing protective functions and diagnosis. It contains Infineon® ReverSave™ functionality. The

power transistor is built by an N-channel MOSFET with charge pump. It is specially designed to drive high

current loads up to 65A, for application like heaters, glow plugs, fan and pump in the harsh automotive

environment.

Data Sheet

www.infineon.com

1

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Overview

Table 1

Product Summary

Parameter

Symbol

V_S(OP)

Values

5.8 V … 18 V

3.1 V ...27 V

5 mΩ

Operating Voltage

Extended supply voltage range

V_S(EXT)

R_DS(ON)

I_L(NOM)

dk_ILIS

Maximum ON-State Resistance (T_j= 150 °C)

Nominal Load Current (T_A= 85°C)

Typical current sense differential ratio

Minimum short circuit current threshold

Maximum reverse battery voltage

Maximum Stand-by Current at T_j= 25 °C

24 A

18000

65 A

I_CL(0)

-V_S(REV)

I_vs(off)

-16 V

4 µA

Embedded Diagnostic Functions

•

Proportional load current sense

Short circuit / Overtemperature detection

Latched status signal after short circuit or overtemperature detection

Embedded Protection Functions

•

Infineon^®ReverSave™: Reverse battery protection by self turn ON of power MOSFET

Short circuit protection with latch

Overtemperature protection with latch

Enhanced short circuit operation

Infineon^®SMART CLAMPING

Type

Package

Marking

BTS50025-1TEA

PG-TO-252-5-11

S50025A

Data Sheet

2

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Table of Contents

1

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2

3

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3.1

3.2

3.3

Pin Assignment 8

Pin Definitions and Functions 8

Voltage and Current Definition 9

4

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4.1

4.2

4.3

Absolute Maximum Ratings 10

Functional Range 13

Thermal Resistance 14

5

5.1

Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Power Stage 15

5.1.1

5.1.2

5.1.3

5.1.3.1

5.1.3.2

5.1.4

5.1.5

5.2

Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Switching Resistive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Switching Inductive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Output Clamping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Maximum Load Inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

PWM Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Advanced switch-off behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Input Pins 19

5.2.1

5.3

Input Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Protection Functions 19

5.3.1

5.3.1.1

5.3.1.2

5.3.1.3

5.3.2

5.4

Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Activation of the Switch into Short Circuit (Short Circuit Type 1) . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Short Circuit Appearance when the Device is already ON (Short Circuit Type 2) . . . . . . . . . . . . 20

Over-power shutdown (PSD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Temperature Limitation in the Power DMOS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Diagnostic Functions 22

5.4.1

5.4.2

5.4.3

5.4.3.1

5.4.3.2

5.4.3.3

5.4.3.4

IS Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

SENSE Signal in Different Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

SENSE Signal in the Nominal Current Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

SENSE Signal Variation and Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

SENSE Signal Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

SENSE Signal in Case of Short Circuit to V_S. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

SENSE Signal in Case of Over Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Data Sheet

3

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

6

Electrical Characteristics BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

6.1

6.2

Electrical Characteristics Table 29

Typical Performance Characteristics 35

7

Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

7.1

Further Application Information 41

8

9

Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Data Sheet

4

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

List of Tables

Table 1

Table 2

Table 3

Table 4

Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Table 5-1 Sense Signal, Function of Operation Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Table 6-1 Electrical Characteristics: BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table 7-1 Bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

Data Sheet

5

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

List of Figures

Figure 2-1 Block Diagram for the BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 2-2 Internal diode diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 3-1 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 3-2 Voltage and Current Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 1

Figure 2

Figure 3

Maximum Energy Dissipation for Inductive Switch OFF, E_AS/ARvs. I_Lat V_S= 13.5 V . . . . . . . . . . . . 12

Maximum Energy Dissipation Repetitive Pulse temperature derating. . . . . . . . . . . . . . . . . . . . . . . 12

Typical Transient Thermal Impedance Z_th(JA)= f(time) for Different PCB Conditions . . . . . . . . . . 14

Figure 5-1 Switching a Resistive Load: Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 5-2 Output Clamp. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 5-3 Switching an Inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 5-4 Switching in PWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 5-5 Input Pin Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 5-6 Diagram of Diagnosis & Protection Block . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 5-7 Over Power Shutdown behavior at low voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 5-8 Behavior of the BTS50025-1TEA during PWM operation above F_INmax . . . . . . . . . . . . . . . . . . . . . 21

Figure 5-9 Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 5-10 Diagnostic Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 5-11 Current Sense for Nominal and Overload Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Figure 5-12 I_IL0and I_ISOdefinition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 5-13 Improved Current Sense Accuracy after 2-Point Calibration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Figure 5-14 Fault Acknowledgement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 7-1 Application Diagram with BTS50025-1TEA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Figure 8-1 PG-TO-252-5-11 (RoHS-Compliant) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Data Sheet

6

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Block Diagram

2

Block Diagram

VS

voltage sensor

over

temperature

Smart clamp

gate control

&

charge

pump

driver

logic

over current

switch OFF

IN

ESD

protection

OUT

load current sense

IS

Figure 2-1 Block Diagram for the BTS50025-1TEA

VCC

2mA

75V

35V

OUT

IFB

IN

Figure 2-2 Internal diode diagram

Data Sheet

7

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Pin Configuration

3

Pin Configuration

3.1

Pin Assignment

3

1 2

4 5

Figure 3-1 Pin Configuration

3.2

Pin Definitions and Functions

1

Symbol Function

OUT

IN

OUTput; Protected high side power output channel¹⁾

INput; Digital signal to switch ON channel with Bipolar or Mosfet (active “low”)

Supply Voltage; Battery voltage

2

3, Cooling tab VS

4

5

IS

Sense; Analog/Digital signal for diagnosis, if not used: left open

OUTput; Protected high side power output channel¹⁾

OUT

1) All output pins are internally connected and they also have to be connected together on the PCB. Not shorting all

outputs on PCB will considerably increase the ON-state resistance and decrease the current sense / overcurrent

tripping accuracy. PCB traces have to be designed to withstand the maximum current.

Exact path resistance matching on both outputs to common point is needed also for short circuit robustness and

reliability at high current.

Data Sheet

8

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Pin Configuration

3.3

Voltage and Current Definition

Figure 3-2 shows all terms used in this data sheet, with associated convention for positive values.

I _VS

V_S

VS

I _IN

IN

V _DS

I_OUT

OUT

V_IN

V_OUT

I_IS

V _IS

IS

Figure 3-2 Voltage and Current Definition

Data Sheet

9

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Table 2

Absolute Maximum Ratings¹⁾

T_j= -40°C to +150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Supply Voltages

Supply Voltage

V_S

-0.3

0

–

35

18

V

–

2)

P_4.1.1

P_4.1.2

Reverse Polarity Voltage

-V_S(REV)

V =0 V

in

T_A= 25°C

R_L≥ 0.68 Ω

t < 5 min.

Load Dump Voltage

V_S(LD)

–

45

V

Suppressed

Load Dump acc.

to ISO16750-2

R_I= 2 Ω

P_4.1.3

td=200ms

Us=100V

R_L= 0.68 Ω

R_IS= 1 kΩ

V

_S(LD)= U_S*

Short Circuit Capability

Supply Voltage for Short Circuit V_S(SC)

Protection

3.1

–

27

V

In accordance to P_4.1.4

AEC Q100-012,

Figure-1 Test

Circuit.

Input Pin

Voltage at IN pin

V_s- V_in

I_IN

-16

-50

–

75

V

–

P_4.1.6

Current through IN pin

Maximum Input Frequency

50

mA

Hz

P_4.1.20

F_in

200

5.8V<V_S- V_IN<27V P_4.1.7

– P_4.1.8

Maximum Retry Cycle Rate in

Fault Condition

F_fault

–

Data Sheet

10

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

General Product Characteristics

Table 2

Absolute Maximum Ratings¹⁾(cont’d)

T_j= -40°C to +150°C; (unless otherwise specified)

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Sense Pin

Voltage at IS pin

Current through IS Pin

Power Stage

V_s- V_is

-0.3

-50

–

75

50

V

–

P_4.1.9

I_IS

mA

–

P_4.1.10

Maximum Energy Dissipation by E_AS

Switching Off Inductive Load

Single Pulse over Lifetime

–

600

130

80

mJ

V

V_S= 13.5 V

I_L= 19 A

T_J(0)≤ 150°C

See Figure 1

³⁾V_S= 13.5 V

I_L= 19A

P_4.1.11

P_4.1.12

P_4.1.13

P_4.1.14

Maximum Energy Dissipation

Repetitive Pulse

E_AR

T_J(0)≤ 105°C

See Figure 1

³⁾V_S= 13.5 V

I_L=40 A

Maximum Energy Dissipation

Repetitive Pulse

E_AR

T_J(0)≤ 105°C

See Figure 1

Voltage at OUT Pin

Temperatures

V_S- V_OUT-0.3

35

–

Junction Temperature

T_J

-40

–

150

60

°C

K

–

P_4.1.15

P_4.1.16

Dynamic Temperature Increase ∆T_J

while Switching

Storage Temperature

ESD Susceptibility

T_STG

-55

–

150

°C

–

P_4.1.17

ESD Susceptibility (all Pins)

V_ESD(HBM)-2

–

2

kV

V

HBM⁴⁾

CDM⁵⁾

P_4.1.18

P_4.1.19

P_4.1.21

P_4.1.22

ESD Susceptibility OUT Pin vs. V_SV_ESD(HBM)-4

ESD Susceptibility (all Pins) V_ESD(CDM)-500

ESD Susceptibility (corner Pins) V_ESD(CD-750

4

500

750

V

1) Not subject to production test, specified by design.

2) The device is mounted on a FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection.

3) Setup with repetitive EAR and superimposed TC conditions (like AEC-Q100-PTC, ≤ 10⁶pulses with E ≤ E_AR, ≤10³passive

temperature cycles), parameter drift within datasheet limits possible

4) ESD susceptibility, Human Body Model “HBM” according to AEC Q100-002.

5) ESD susceptibility, Charged Device Model “CDM” according to AEC Q100-011.

Notes

1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

Data Sheet

11

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

General Product Characteristics

2.0

1.5

1.0

0.5

0.0

Eas - TJ(0)<150°C

Ear - TJ(0)<105°C

0

10

20

I_L(0)[A]

30

40

50

60

Figure 1

Maximum Energy Dissipation for Inductive Switch OFF, E_AS/ARvs. I_Lat V_S= 13.5 V

100%

80%

60%

40%

20%

0%

100

110

120

130

140

150

T_j(0)[°C]

Figure 2

Maximum Energy Dissipation Repetitive Pulse temperature derating

Data Sheet

12

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

General Product Characteristics

4.2

Functional Range

Table 3

Functional Range

Parameter

Symbol

V_S(NOM)

V_S(EXT)

Values

Typ.

–

Unit Note or

Test Condition

Number

Min.

Max.

Supply Voltage Range for

Nominal Operation

5.8

18

V

–

P_4.2.1

P_4.2.2

Supply Voltage Range for

Extended Operation

3.1

–

27

V

¹⁾Parameter

deviation possible

1) Protection functions still operative

Note:

Within the functional or operating range, the IC operates as described in the circuit description. The

electrical characteristics are specified within the conditions given in the Electrical Characteristics

table.

Data Sheet

13

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

General Product Characteristics

4.3

Thermal Resistance

Note:

This thermal data was generated in accordance with JEDEC JESD51 standards. For more

information, go to www.jedec.org.

Table 4

Thermal Resistance

Parameter

Symbol

Values

Typ.

–

Unit Note or

Test Condition

Number

Min.

Max.

0.8

–

1)

Junction to Case

R_thJC

–

K/W

P_4.3.1

P_4.3.2

P_4.3.3

1)2)

1)3)

Junction to Ambient

R_thJA(2s2p)

R_{thJA(1s0p/600}

mm2)

22

35

–

1) Not subject to production test, specified by design.

2) Specified R_thJAvalue is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product

(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm

Cu). Where applicable a thermal via array under the exposed pad contacted the first inner copper layer. T_A= 25°C.

Device is dissipating 2 W power.

3) Specified R_thJAvalue is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 1s0p board; the Product

(Chip+Package) was simulated on a 76.2 × 114.3 × 1.5 mm board with only one top copper layer 1 × 70 µm. T_A= 25°C.

Device is dissipating 2 W power.

Figure 3 is showing the typical thermal impedance of BTS50025-1TEA mounted according to JEDEC JESD51-

2,-5,-7 at natural convection on FR4 1s0p and 2s2p boards.

100

JEDEC 1s0p / 600mm²

JEDEC 1s0p / 300mm²

JEDEC 1s0p / footprint

10

JEDEC 2s2p

1

0.1

0.01

0.0001

0.001

0.01

0.1

time [sec]

1

10

100

1000

Figure 3

Typical Transient Thermal Impedance Z_th(JA)= f(time) for Different PCB Conditions

Data Sheet

14

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

5

Functional Description

5.1

Power Stage

The power stage is built by a N-channel power MOSFET (DMOS) with a charge pump.

5.1.1

Output ON-State Resistance

The ON-state resistance R_DS(ON)depends on the supply voltage as well as the junction temperature T_J. Page 35

shows the dependencies in terms of temperature and supply voltage, for the typical ON-state resistance. The

behavior in reverse polarity is described in Chapter 5.2.1.

A LOW signal (see Chapter 5.1.2) at the input pin causes the power DMOS to switch ON with a dedicated slope,

which is optimized in terms of EMC emission.

5.1.2

Switching Resistive Loads

Figure 5-1 shows the typical timing when switching a resistive load. The power stage has a defined switching

behavior. Defined slew rates results in lowest EMC emission at minimum switching losses.

V_OUT

80%V_S

50

V

%

S

dV_OFF/dt

dV_ON/dt

V

IN

25%V_S

V

S

20%

t_{OFF( DELAY)}

t _F

V

IN

t_{ON DELAY)}

t _R

(

Figure 5-1 Switching a Resistive Load: Timing

5.1.3

Switching Inductive Loads

5.1.3.1 Output Clamping

When switching OFF inductive loads with high side switches, the voltage V_OUTdrops below ground potential,

because the inductance intends to continue driving the current. To prevent the destruction of the device due

to high voltages, there is a Infineon^®SMART CLAMPING mechanism implemented that keeps negative output

voltage to a certain level (V_S- V_DS(CL)). Please refer to Figure 5-2 and Figure 5-3 for details. Nevertheless, the

maximum allowed load inductance remains limited.

Data Sheet

15

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

VS

V_IN

Smart

Clamp

V_DS

IN

LOGIC

I_L

V_S

OUT

V_OUT

L, R_L

Figure 5-2 Output Clamp

V

IN

t

V_OUT

V_S

Gnd

V_S- V_{DS(Fast off)}

V_S-V_DS(CL)

I_OUT

t

T

j

T_J0

Figure 5-3 Switching an Inductance

The BTS50025-1TEA provides Infineon^®SMART CLAMPING functionality. To increase the energy capability, the

clamp voltage V_DS(CL)increases with junction temperature T_Jand with load current I_L. Refer to Page 37.

Data Sheet

16

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

5.1.3.2 Maximum Load Inductance

During demagnetization of inductive loads, energy must be dissipated in the BTS50025-1TEA. This energy can

be calculated with following equation:

L

R_L

V_S− V_DS(CL)

R_L× I_L

E = V_DS(CL)

×

[

× ln

(

1 −

) + I_L]

R_L

V_S− V_DS(CL)

(5.1)

Following equation simplifies under the assumption of R_L= 0 Ω.

1

V_S

E = × L × I_L²×

2

(

1 −

)

V_S− V_DS(CL)

(5.2)

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 1 for

the maximum allowed energy dissipation as function of the load current.

Data Sheet

17

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

5.1.4

PWM Switching

The switching losses during this operation should be properly considered (see following equation):

P_TOTAL= (switching_ON_energy + switching_OFF_energy + I_L²× R_DS(ON)× t_DC) / period

In the event of a fault condition it has to be ensured, that the PWM frequency will not exceed a maximum retry

frequency of f_FAULT(parameter P_4.1.9). With this measure the short circuit robustness n_RSC1(parameter

P_4.1.4) can be utilized. Operation at nominal PWM frequency can only be restored, once the fault condition

is overcome.

V_S-V _IN

V_{IN_H}

V_{IN_L}

t

P

P_TOT

t

t_DC

Figure 5-4 Switching in PWM

5.1.5

Advanced switch-off behavior

In order to reduce device stress when switching OFF Inductive and critical loads, the device provides an

advanced switch off functionality which results in a faster switch off behavior. This fast switch off functionality

is triggered by one the following conditions:

•

The device is commanded off by applying V_IN(L)at the IN pin. During the switch OFF operation the OUT pins’

voltage in respect to VS pin drops below V_{ds(fast off)}. See Figure 5-3.

•

The device is commanded on or is already in on-state. The device then detects a short circuit condition

(I_L≥ I_CL(0)) and initiates a protective switch off. Please refer to Chapter 5.3.1.1 and Chapter 5.3.1.2 for

details.

•

The device is commanded on or is already in on-state. The device then detects an over-temperature

condition.

Data Sheet

18

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

5.2

Input Pins

5.2.1

Input Circuitry

The input circuitry is referenced to VS. To turn on the device V_S- V_INmust be higher than V_IN(H)and lower than

V_IN(L)to turn off the device. The most common way is to use a bipolar transistor to connect the input pin to the

ground. When the device is latched in protection mode V_S- V_INmust be lower than V_IN(L)and I_inlower than I_IN(L)

in order to reset the latch. The device provides Infineon® ReverSave™ functionality which turns on the power

mosfet in reverse polarity. This functionality required to have a diode in parallel of the bipolar transistor.

Figure 5-5 shows the electrical equivalent input circuitry.

VS

2mA

75V

IN

RIN

Figure 5-5 Input Pin Circuitry

5.3

Protection Functions

The device provides embedded protective functions. Integrated protection functions are designed to prevent

the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as

“outside” normal operating range. Protection functions are designed neither for continuous nor for repetitive

operation.

Figure 5-6 describes the typical functionality of the diagnosis and protection block.

Data Sheet

19

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

V_S

V_DS

V_b,IS

VS

ESD

protection

IN

current

sense

Driver

I_IS(fault)

Over-

current

I_L

IS

1

0

(I_L/dk_ILIS

)

I_IS0

OUT

V_IS

t_IN(RESET

DELAY)

I_IS

&

R

S

Q

R_IS

I_L>I_CL

1

&

FAULT

Q

T_J>T_J(TRIP)

driver logic Power Shutdown (PSD)

GND

Figure 5-6 Diagram of Diagnosis & Protection Block

5.3.1

Overload Protection

In case of overload, high inrush current or short circuit to ground, the BTS50025-1TEA offers several protection

mechanisms. Any protective switch OFF latches the output. To restart the device, it is necessary to set V_s- V_in

< V_in(l)and I_inlower than I_IN(L)for t > t_{IN(RESETDELAY)}. This is a latch behavior. Figure 5-9 gives a sketch of the

situation.

5.3.1.1 Activation of the Switch into Short Circuit (Short Circuit Type 1)

When the switch is activated into short circuit, the current will raise. When the output current reaches I_CL(0)

value, the device is latched and will turn off after t_OFF(TRIP)regardless the output current value. For overload

(short circuit or overtemperature), the maximum retry cycle (f_fault) under fault condition must be considered.

5.3.1.2 Short Circuit Appearance when the Device is already ON (Short Circuit Type 2)

When the device is in ON state and a short circuit to ground appears at the output (SC2) with an overcurrent

higher than I_CL(0), the device automatically turns OFF and latches the device.

5.3.1.3 Over-power shutdown (PSD)

The BTS50025-1TEA integrates an over-power shutdown protection in order to limit the power dissipation.

This protection intends to limit the maximum junction temperaturee in case of soft short circuit(IL < I_CL(0)),

repetitive short circuit or short circuit at low voltage.

In case of a short circuit at low voltage with high resistor or inductor in the battery line, Vs can drop below V_VS-

_VIN(PSD)and the load current will not reach the I_CL(0). In such condition the over-power shutdown protection will

be activated and will latch the device after t_PSD(UV)

.

Data Sheet

20

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

V_IN

V_S

t

V_VS-VIN(PSD

)

V_INL

I_CL(0)

I_OUT

V_DS

V_DS(PSD)

t_PSD(UV)

Figure 5-7 Over Power Shutdown behavior at low voltage

It also limits the maximum PWM frequency below F_IN. See Figure 5-8

Input frequency < Fin max

Input frequency > Fin max

Vin-Gnd

t

Vout-Gnd

Vifb

t

Missing pulses – Part is latched

Normal operation

Figure 5-8 Behavior of the BTS50025-1TEA during PWM operation above F_INmax

5.3.2

Temperature Limitation in the Power DMOS

The BTS50025-1TEA incorporates a temperature sensor. Triggering the over-temperature (T_J(TRIP)) will switch

OFF the Power Mosfet to prevent destruction and latches the device.

Data Sheet

21

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

t_{IN (RESETDELAY)}

IN

I_L

t

t_{OFF( TRIP)}

I_CL(1)

I_CL(0)

T

J

T_{J( TRIP)}

T_A

t

I_IS

I_IS(

FAULT)

0

Figure 5-9 Overload Protection

The current sense exact signal timing can be found in the Chapter 5.4.3.2. It is represented here only for

device’s behavior understanding.

5.4

Diagnostic Functions

For diagnosis purposes, the BTS50025-1TEA provides a combination of digital and analog signal at pin IS.

5.4.1

IS Pin

The BTS50025-1TEA provides an enhanced current sense signal called I_ISat pin IS. As long as no “hard” failure

mode occurs (short circuit to GND / overcurrent / overtemperature) and the condition V_IS≤ V_OUT- 3.5 V is

fulfilled, a proportional signal to the load current is provided. The complete IS pin and diagnostic mechanism

is described in Figure 5-10. The accuracy of the sense current depends on temperature and load current. In

case of failure, a fixed I_IS(FAULT)is provided. In order to get the fault current in the specified range, the condition

V_S- V_IS≥ 3.5 V must be fulfilled.

Data Sheet

22

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

VS

I_{IS( FAULT)}

(I_L/dk _ILIS) I_IS(0)

Z

IS(AZ)

FAULT

1

0

IS

Figure 5-10 Diagnostic Block Diagram

5.4.2

SENSE Signal in Different Operation Modes

Table 5-1 Sense Signal, Function of Operation Mode¹⁾

Operation mode

Input Level

Output Level V_OUTDiagnostic Output (IS)²⁾

Normal operation

Short circuit to GND

Overtemperature

Short circuit to VS

Open Load

HIGH (OFF)

GND

V_S

I_IS(OFF)

Z

I_IS(OFF)

Normal operation

Short circuit to GND

Overtemperature (after the event)

Short circuit to VS

LOW (ON)

~ V_S

GND

V_S

I_IS= (I_L/ dk_ILIS) ± I_IS0

I_IS(FAULT)

I_IS< I_L/ dk_ILIS± I_IS0

I_IS0

Open Load

V_S

1) Z = High Impedance

2) See Chapter 5.4.3 for Current Sense Range and Improved Current Sense Accuracy.

5.4.3

SENSE Signal in the Nominal Current Range

Figure 5-11 and Figure 5-13 show the current sense as function of the load current in the power DMOS.

Usually, a pull-down resistor R_ISis connected to the current sense pin IS. A typical value is 1 kΩ. The dotted

curve represents the typical sense current, assuming a typical dk_ILISfactor value. The range between the two

solid curves shows the sense accuracy range that the device is able to provide, at a defined current.

I_L

dk_ILIS

I_IS

=

+ I_IS0with (I_IS≥ 0)

(5.3)

Data Sheet

23

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

where the definition of dk_ILISis:

I_L3

-

I_L1

I_IS1

dk_ILIS

=

I_IS3

(5.4)

(5.5)

(5.6)

the definition of I_IS0is:

I_L1

dk_ILIS

I_IS0= I_IS1

−

and the definition of I_L0is:

I_IL0= I_IL1

−

I_S1× dk_ILIS

5

4.5

4

dK_ILISmin.

dK_ILIStyp.

dK_ILISmax.

3.5

3

2.5

2

1.5

1

0.5

0

20

40

60

80

I_L[A]

Figure 5-11 Current Sense for Nominal and Overload Condition

Data Sheet

24

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

0.02

0.015

0.01

dk_ILIS(min)

dk_ILIS(typ)

I_IS0(max)

dk_ILIS(max)

0.005

0

I_IL0(min)

I_IL0(max)

-0.005

-0.01

-0.015

-0.02

I_IS0(min)

-0.5

-0.4

-0.3

-0.2

-0.1

0

0.1

0.2

0.3

0.4

0.5

I_L[A]

Figure 5-12 I_IL0and I_ISOdefinition

5.4.3.1 SENSE Signal Variation and Calibration

In some applications, an enhanced accuracy is required around the device nominal current range I_L(NOM). To

achieve this accuracy requirement, a calibration on the application is possible. After two point calibration, the

BTS50025-1TEA will have a limited I_ISvalue spread at different load currents and temperature conditions. The

I_ISvariation can be described with the parameters ∆(dk_ILIS(cal)) and the ∆I_IS0(cal). The blue solid line in

Figure 5-13 is the current sense ratio after the two point calibration at a given temperature. The slope of this

line is defined as follows:

I_IS(cal)2− I_IS(cal)1

1

=

dk_ILIS(cal)I_L(cal)2− I_L(cal)1

(5.7)

The offset is defined as follows:

I_L(cal)1

dk_ILIS(cal)

I_L(cal)2

dk_ILIS(cal)

I_IS0(cal)= I_IS(cal)1

−

= I_IS(cal)2

−

(5.8)

The bluish area in Figure 5-13 is the range where the current sense ratio can vary across temperature and load

current after performing the calibration. The accuracy of the load current sensing is improved and, given a

sense current value I_IS(measured in the application), the load current can be calculated as follow, using the

absolute value for ∆(dk_ILIS(cal)) instead of % values:

I_L= dk_ILIS(cal)

×

(1 + ∆(dk_ILIS(cal)

)

×

(

I_IS− I_IS0(cal)− ∆I_IS0(cal)

)

(5.9)

Data Sheet

25

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

where dk_ILIS(cal)is the current sense ratio measured after two-points calibration (defined in Equation (5.7)),

I_IS0(cal)is the current sense offset (calculated after two points calibration, see Equation (5.8)), and ∆I_IS0(cal)is

the additional variation of the individual offset over life time and temperature. For a calibration at 25°C ∆I_IS0(cal)

varies over temperature and life time for all positive ∆I_IS0(cal)within the differences of the temperature

dependent Max. limits. All negative ∆I_IS0(cal)vary within the differences of the temperature dependent Min.

limits.

For positive I_IS0(cal)values (I_IS0(cal)> 0):

Max I_IS0(@T_J= 150°C)

−

Max I_IS0(@T_J= 25°C) ≤ ∆I_IS0(cal)≤ Max I_IS0(@T_J= -40°C)

−

Max I_IS0(@T_J= 25°C)

(5.10)

For negative I_IS0(cal)values (I_IS0(cal)< 0):

Min I_IS0(@T_J= 150°C)

−

Min I_IS0(@T_J= 25°C) ≥ ∆I_IS0(cal)≥ Min I_IS0(@T_J= -40°C)

−

Min I_IS0(@T_J= 25°C)

(5.11)

Equation (5.9) actually provides four solutions for load current, considering that ∆(dk_ILIS(cal)) and ∆I_IS0(cal)can

be both positive and negative. The load current I_Lfor any sense current I_ISwill spread between a minimum I_L

value resulting from the combination of lowest ∆(dk_ILIS(cal)) value and highest ∆I_IS0(cal)and a maximum I_Lvalue

resulting from the combination of highest ∆(dk_ILIS(cal)) value and lowest ∆I_IS0(cal)

.

I_IS

1/dk_ILIS(min)

Δdk_ILIS(cal)

1/dk_ILIS(cal)

Δdk_ILIS(cal)

1/dk_ILIS(max)

I_IS(cal)2

I_IS

I_IS(cal)1

ΔI_IS0(cal)

I_IS0(cal)

Max I_L

Min I_LTyp I_L

I_L

I_L(cal)1

I_L(cal)2

ΔI_IS0(cal)

Figure 5-13 Improved Current Sense Accuracy after 2-Point Calibration

Data Sheet

26

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

5.4.3.2 SENSE Signal Timing

Figure 5-14 shows the timing during settling and disabling of the sense.

t_OFF<t_{IN( RESETDELAY)}

V

IN

t_OFF>t

IN( RESETDELAY)

Short/

t

Overtemp./

PSD

V_OUT

I_IS

_IS(fault)t

I

I_IS

t

latch

no

reset

V

IN

V

IN

t

Short

circuit

t

t_ON

I_L

80 % of

I_Lstatic

t

V_OUT

t_sIS(ON)

t_{sIS(ON)_90}

t

I_IS

90 % of

I_Sstatic

I_IS

I_{IS( fault)}

I_IS

t_sIS(LC)

t

t_{pIS( FAULT)}

Figure 5-14 Fault Acknowledgement

5.4.3.3 SENSE Signal in Case of Short Circuit to V_S

In case of a short circuit between OUT and VS, a major part of the load current will flow through the short

circuit. As a result, a lower current compared to the nominal operation will flow through the DMOS of the

BTS50025-1TEA, which can be recognized at the current sense signal.

5.4.3.4 SENSE Signal in Case of Over Load

An over load condition is defined by a current flowing out of the DMOS reaching the current over load I_CLor the

junction temperature reaches the thermal shutdown temperature T_J(TRIP). Please refer to Chapter 5.3.1 for

details. In that case, the SENSE signal will be I_IS(FAULT)when the IN pin stays LOW.

Data Sheet

27

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Functional Description

This is a device with latch functionality. The state of the device will remain and the sense signal will remain on

I_IS(FAULT)until a reset signal comes from the IN pin. For example, when a thermal shutdown occurs, even when

the over temperature condition has disappeared, the DMOS can only be reactivated when a reset signal is sent

to the IN pin.

Data Sheet

28

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

6

Electrical Characteristics BTS50025-1TEA

6.1

Electrical Characteristics Table

Table 6-1 Electrical Characteristics: BTS50025-1TEA

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Operating and Standby Currents

Standby Current for Whole I_VS(OFF)

Device with Load

–

1

4

µA

¹⁾V_S= 18 V

V_OUT= 0 V

V_in= V_s

T_J≤ 85°C

See Page 35

P_6.1.1

Maximum Standby Current I_VS(OFF)

for Whole Device with Load

–

10

100

V_S= 18 V

V_OUT= 0 V

V_in= V_s

T_J≤ 150°C

See Παγε 35

P_6.1.2

P_6.1.3

Power Stage

ON-State Resistance in

Forward Condition

R_DS(ON)

4.4

5

mΩ

I_L= 20 A

V_s- V_in≥ 5.8 V

T_J= 150°C

See Παγε 35

ON-State Resistance in

Forward Condition

R_DS(ON)

–

2.7

6

–

mΩ

¹⁾I_L= 20 A

V_s- V_in≥ 5.8 V

T_J= 25°C

P_6.1.4

P_6.1.5

P_6.1.6

ON-State Resistance in

Forward Condition, Low

Battery Voltage

20

–

I_L= 12 A

V_s- V_in≥ 3.1 V

T_J= 150°C

¹⁾I_L= 12 A

V_s- V_in≥ 3.1 V

T_J= 25°C

ON-State Resistance in

Forward Condition, Low

Battery Voltage

3.5

Nominal Load Current

I_L(NOM)

V_DS(CL)

24

30

26

35

–

A

V

²⁾T_A= 85°C

T_J≤ 150°C

P_6.1.7

P_6.1.8

Drain to Source Smart

Clamp Voltage V_DS(CL)= V_S-

V_OUT

45

I_DS= 10 mA

T_J= 25°C

See Page 37

Drain to Source Smart

Clamp Voltage V_DS(CL)= V_S-

V_OUT

V_DS(CL)

35

–

39

50

–

V

I_DS= 10 mA

T_J= 150°C

See Page 37

¹⁾See Page 16

P_6.1.9

Fast turn off detection

voltage

V_DS(FAST)

28

P_6.1.10

Data Sheet

29

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

0.6

Unit Note or

Test Condition

Number

Min.

Max.

Body diode Forward voltage V_F

–

0.8

V

I_OUT= -20A

P_6.1.11

P_6.1.12

T_J= 150°C

Output Leakage Current

I_L(OFF)

–

1

4

µA

¹⁾V_S= 18 V

V_OUT= 0 V

V_in= V_s

T_J≤ 85°C

( 10ms after

V_S= V_IN

)

I_L(OFF)

10

100

µA

V_S= 18 V

V_OUT= 0 V

V_in= V_s

P_6.1.13

T_J≤ 150°C

( 10ms after

V_S= V_IN

)

Turn ON Slew Rate

V_OUT= 25% to 50% V_S

dV_ON/dt

-dV_OFF/dt

t_r

0.05

10

0.25

50

1

V/µs R_L= 0.68 Ω

V_S= 13.5 V

P_6.1.14

P_6.1.15

P_6.1.16

P_6.1.17

P_6.1.18

P_6.1.19

P_6.1.20

See Figure 5-1

See Page 36

Turn OFF Slew Rate

V_OUT= 50% to 25% V_S

1

V/µs

Rising time during turn on

V_OUTfrom 20% to 80% of V_S

150

250

450

–

µs

Falling time during turn off t_f

V_OUTfrom 80% to 20% of V_S

10

50

µs

Turn ON Time to

V_OUT= 20% of V_S

t_ON(DELAY)

t_OFF(DELAY)

E_ON

10

50

µs

Turn OFF Time to

V_OUT= 80% of V_S

50

150

5.5

µs

Switch ON Energy

–

mJ

¹⁾R_L= 0.68 Ω

V_S= 13.5 V

See Page 37

Switch OFF Energy

E_OFF

–

4

–

mJ

¹⁾R_L= 0.68 Ω

V_S= 13.5 V

P_6.1.21

See Page 37

Data Sheet

30

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Input Pin

LOW Level Input Voltage

HIGH Level Input Voltage

Input Voltage Hysteresis

On stage Input Current

V_VS-VIN(L)

V_VS-VIN(H)

V_VS-VIN(HYS)

I_IN(ON)

2.3

4

2.7

4.8

2.1

2

3.1

5.8

2.5

4

V

P_6.1.22

P_6.1.23

P_6.1.24

P_6.1.25

V

1.7

1

V

mA

V_S- V_IN= 18 V,

V_S= 18V

LOW Level Input Current

Input resistor

I_IN(L)

R_in

100

115

–

µA

V_IN= V_in(L)

P_6.1.26

P_6.1.27

200

300

Ω

Built-in

Protection: Reverse Polarity

ON-State Resistance in

Reverse Polarity

R_DS(REV)

–

5

4

10

–

mΩ

V_S= 0 V

V_S- V_IN= -16 V

I_L= -20 A

T_J= 150°C

¹⁾V_S= 0 V

P_6.1.28

ON-State Resistance in

Reverse Polarity

R_DS(REV)

–

P_6.1.29

V_S- V_IN= -16 V

I_L= -20 A

T_J= 25°C

See Page 37

Protection: Overload

Current Trip Detection Level I_CL(0)

65

82

100

A

5.8V < V_S- V_IN<

27V

P_6.1.30

See Figure 5-9

Current Trip Detection Level I_{CL(0_UV)}

at low voltage

12

65

–

82

120

140

–

A

V_S= 3.1V

P_6.1.32

P_6.1.33

Current Trip Maximum Level I_CL(1)

92

A

dI_L/dt = 1 A/µs

See Figure 5-9

¹⁾See Figure 5-9 P_6.1.34

Overload Shutdown Delay

Time

t_OFF(TRIP)

T_J(TRIP)

7

µs

°C

Thermal Shutdown

Temperature

150

175¹⁾

200¹⁾

See Figure 5-9

3.1V < V_S- V_IN<

27V

P_6.1.35

Over Power Shutdown

Detection Level

V_DS(PSD)

650

3.8

10

900

4.3

50

1100

5

mV

V

¹⁾See Figure 5-7 P_6.1.36

Over Power Shutdown

Activation Level

V_VS-VIN(PSD)

¹⁾See Figure 5-7 P_6.1.37

Over Power Shutdown Time t_PSD(UV)

300

µs

See Figure 5-7

P_6.1.38

Data Sheet

31

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Diagnostic Function: Sense Pin

Sense Signal Current in Fault I_IS(FAULT)

Condition

5

12

18

mA

V_S- V_IS≥ 3.5 V

Typ. and Max.

value: V_S-

V_IS≥ 8 V

¹⁾V_S- V_IS≥ 3.5 V P_6.1.40

P_6.1.39

Sense Signal Saturation

Current

I_IS(LIM)

4.4

6.5

–

Data Sheet

32

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Diagnostic Function: Current Sense Ratio Signal in the Nominal Area, Stable Current Load Condition

Current Sense Differential

Ratio

dk_ILIS

15500 18000 20500

–

I_L3= 60 A

P_6.1.41

I_L1= 0.2 A

V_S- V_IS≥ 3.5 V

See

Equation (5.4)

Calculated Sense Offset load I_L0

Current

I_S= 0 A, Tj=-40°C

-0.15

-0.13

-0.105

-7

0

0.15

0.13

0.105

9.7

A

³⁾V_S- V_IS≥ 3.5 V P_6.1.42

See Figure 5-11

Calculated Sense Offset load I_L0

Current

I_S= 0 A, Tj=25°C

A

³⁾V_S- V_IS≥ 3.5 V P_6.1.60

See Figure 5-11

Calculated Sense Offset load I_L0

Current

I_S= 0 A, Tj=150°C

A

³⁾V_S- V_IS≥ 3.5 V P_6.1.61

See Figure 5-11

Calculated Sense Offset

Current

I_L= I_L0= 0 A, Tj=-40°C

I_IS0

µA

³⁾V_S- V_IS≥ 3.5 V P_6.1.43

Tj=-40°C

See Figure 5-11

³⁾V_S- V_IS≥ 3.5 V P_6.1.58

Tj=25°C

See Figure 5-11

Calculated Sense Offset

Current

I_L= I_L0= 0 A, Tj=25°C

-5.95

-4.9

8.25

6.8

Calculated Sense Offset

Current

³⁾V_S- V_IS≥ 3.5 V P_6.1.59

Tj=150°C

I_L= I_L0= 0 A, Tj=150°C

See Figure 5-11

Sense Current

I_L= I_L1= 0.2 A

I_IS1

I_IS2

I_IS3

2.3

10.8

1.08

3.24

0

22.6

1.3

µA

mA

%

V_S- V_IS≥ 3.5 V

See Figure 5-11

P_6.1.44

P_6.1.45

P_6.1.46

P_6.1.47

Sense Current

I_L= I_L2= 20 A

0.92

2.78

V_S- V_IS≥ 3.5 V

See Figure 5-11

Sense Current

I_L= I_L3= 60 A

3.88

+1.5

V_S- V_IS≥ 3.5 V

See Figure 5-11

¹⁾(dk_{ILIS(cal)(40°C)}

dk_{ILIS(cal)(25°C)})/

dk_{ILIS(cal)(25°C)}

Current Sense Ratio Spread ∆(dk_ILIS(cal)(--1.5

between -40°C and 25°C for

Repetitive Operation

-

)

40°C)

See Figure 5-13

Current Sense Ratio Spread ∆(dk_{ILIS(cal)(150}-3.5

-0.8

+2

%

¹⁾(dk_{ILIS(cal)(150°C)}

dk_{ILIS(cal)(25°C)})/

dk_{ILIS(cal)(25°C)}

-

P_6.1.48

between 150°C and 25°C for

Repetitive Operation

)

°C)

See Figure 5-13

Data Sheet

33

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Table 6-1 Electrical Characteristics: BTS50025-1TEA (cont’d)

V_S=5.8 V to 18 V, T_j= -40°C to +150°C (unless otherwise specified)

For a given temperature or voltage range, typical values are specified at V_S= 13.5 V, T_J= 25°C

Parameter

Symbol

Values

Typ.

Unit Note or

Test Condition

Number

Min.

Max.

Diagnostic Function: Diagnostic Timing in Normal Condition

Current Sense Settling Time t_{sIS(ON)_90}

until 90% and 110% of I_IS

Stable after turn on

–

5

700

1500

1

µs

µA

µs

V_S= 13.5 V

R_L= 0.68 Ω

See Figure 5-14

P_6.1.49

P_6.1.50

P_6.1.51

P_6.1.52

Current Sense Settling Time t_sIS(ON)

to I_ISStable after turn on

V_S= 13.5 V

R_L= 0.68 Ω

See Figure 5-14

I_ISLeakage Current when IN I_IS(OFF)

Disabled

V_IN= V_S

R_IS= 1k Ω

T_J≤ 150°C

¹⁾I_L≥ 0.2 A

Current Sense Settling Time t_sIS(LC)

–

after Load Change

Diagnostic Function: Diagnostic Timing in Overload Condition

Fault Propagation Time for t_pIS(FAULT)

Short Circuit Detection

–

6

3

20

µs

See Figure 5-14 P_6.1.53

1)

Fault Propagation Time for t_FAULT(OT)

Over temperature Detection

100

–

P_6.1.55

Delay Time to Reset Fault

t_{IN(RESETDELAY)}

5000

See Figure 5-14 P_6.1.54

Pin after Turning OFF V_IN

1) Not subject to production test, specified by design.

2) Value is calculated from the parameters typ. R_thJA(2s2p), with 65 K temperature increase, typ. and max. R_DS(ON)

.

3) Value is calculated from the parameters dk_ILISand I_IS1

.

Data Sheet

34

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

6.2

Typical Performance Characteristics

Standby Current for Whole Device with Load,

I_VS(OFF)= f(V_S, T_J), -40°C, 85°C, 150°C

I_VS(OFF)= f(T_J) at V_S= 13.5 V

10.0

30.0

Vs=13,5V

9.0

-40°C

25.0

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

85°C

20.0

150°C

15.0

10.0

5.0

0.0

0

5

10

15

20

25

30

-40 -20

0

20 40 60 80 100 120 140 160

V_S[V]

Temperature [°C]

ON State Resistance

R_DS(ON)= f(V_S- V_IN, T_J), I_L= 10 A ... I_CL(0) min; -40°C, R_DS(ON)= f(T_J),V_S- V_IN= 13.5 V, I_L= 10 A ... I_CL(0) min

25°C, 150°C

10

9

8

7

6

5

4

3

2

1

0

6.0

5.0

4.0

3.0

2.0

1.0

0.0

-40°C

25°C

150°C

3

8

13

18

23

28

-40 -20

0

20 40 60 80 100 120 140 160

V_S- V_IN[V]

Temperature [°C]

Data Sheet

35

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Turn ON Time

Turn OFF Time

t_ON= f(V_S, T_J), R_L= 0.68 Ω

t_OFF= f(V_S, T_J), R_L= 0.68 Ω

100

300

250

200

150

100

50

-40°C

25°C

-40°C

150°C

25°C

75

150°C

50

25

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S- V_IN[V]

Slew Rate at Turn ON

Slew Rate at Turn OFF

dV_ON/ dt = f(V_S, T_J), R_L= 0.68 Ω

dV_OFF/ dt = f(V_S, T_J), R_L= 0.68 Ω

0.6

-40°C

25°C

-40°C

25°C

0.5

0.4

0.3

0.2

0.1

0

150°C

0.4

0.3

0.2

0.1

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S- V_IN[V]

Data Sheet

36

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Switch ON Energy

Switch OFF Energy

E_ON= f(V_S, T_J), R_L= 0.68 Ω

E_OFF= f(V_S, T_J), R_L= 0.68 Ω

30.0

-40°C

25°C

25.0

150°C

20.0

15.0

10.0

5.0

15.0

10.0

5.0

0.0

0

5

10

15

20

25

30

0

5

10

15

20

25

30

V_S- V_IN[V]

Drain to Source Clamp Voltage

Resistance in ReverSave™

V_DS(CL)= f(T_J), I_L= 10 mA

R_DS(REV)= f(V_S, T_J), I_L= -20 A

40.0

38.0

36.0

34.0

32.0

30.0

20.0

15.0

10.0

5.0

-40°C

25°C

150°C

0.0

-40 -20

0

20 40 60 80 100120140160

0

5

10

15

20

T_J[°C]

V_S- V_IN[V]

Data Sheet

37

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

Input Current

Time to Shutdown

I_IN= f(V_S, T_J)

t_SHUTDOWNVs I_L, R_thJA(2s2p)

4

100

10

1

-40°C

25°C

150°C

3

2

1

0

-40°C

25°C

150°C

0.1

0

5

10

15

20

25

30

0

10 20 30 40 50 60 70 80

V_S- V_IN[V]

I_L[A]

V_IS(FAULT)min. Vs V_S; R_IS= 500Ω, 1 kΩ, 2.2 kΩ

dK_ILISVs T_J

25

18500

18400

18300

18200

18100

18000

17900

17800

17700

17600

17500

Ris=500ohm

Ris=1kohm

Ris=2.2kohm

20

15

10

5

0

-40 -20

0

20 40 60 80 100120140160

0

5

10

15

20

25

30

T_J[°C]

V_S[V]

Data Sheet

38

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Electrical Characteristics BTS50025-1TEA

I_CL(0)= f(V_S, T_J)

-40°C

150°C

25°C

112

102

92

82

72

62

52

42

32

22

12

0

5

10

15

20

25

30

V_S- V_IN[V]

Data Sheet

39

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Application Information

7

Application Information

Note: The following information is given as a hint for the implementation of the device only and shall not be

regarded as a description or warranty of a certain functionality, condition or quality of the device.This is

a very simplified example of an application circuit. The function must be verified in the real application.

V_BAT

R/L cable

C_VS

V_DD

VDD

A/D IN

VS

OUT

R

IS_PROT

IS

IN

R/ L cable

Micro controller

R

IS

C_SENSE

R

IN

GPIO

VSS

D

Load

Figure 7-1 Application Diagram with BTS50025-1TEA

Data Sheet

40

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Application Information

Table 7-1 Bill of material

Reference

Value

Purpose

R_IN

4.7 kΩ

Protection of the microcontroller during reverse polarity and during loss of

ground

R_IS

1 kΩ

Sense resistor

R_{IS_PROT}

10 kΩ

Protection of the microcontroller during fault condition

Protection of the BTS50025-1TEA and the microcontroller during reverse

polarity

C_SENSE

C_VS

10 nF

Sense signal filtering

100 nF

Improved EMC behavior (in layout, pls. place close to the pins)

To turn on the Power Mosfet during reverse polarity

D

7.1

Further Application Information

•

Please contact us for information regarding the pin FMEA

For further information you may contact http://www.infineon.com/

Data Sheet

41

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Package Information

8

Package Information

Figure 8-1 PG-TO-252-5-11 (RoHS-Compliant)¹⁾

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant

with government regulations the device is available as a green product. Green products are RoHS-Compliant

(i.e. Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

1) Dimensions in mm

Data Sheet

42

Rev.1.1

2019-09-30

BTS50025-1TEA

Smart High-Side Power Switch

Revision History

9

Revision History

Revision

Date

Changes

1.1

2019-09-30 Chapter “Electrical Characteristics”

•

Change P_6.1.30 and P_6.1.33 minimum limit from 60A to 65A

Change P_6.1.30 and P_6.1.32 typical value from 80A to 82A

Change P_6.1.33 typical value from 87A to 92A

1.0

2018-08-16 Datasheet created

Data Sheet

43

Rev.1.1

2019-09-30

Please read the Important Notice and Warnings at the end of this document

Trademarks of Infineon Technologies AG

µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,

DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,

HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OPTIGA™,

OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,

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Trademarks updated November 2015

Other Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on technology, delivery terms

Edition 2019-09-30

Published by

Infineon Technologies AG

81726 Munich, Germany

event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest

characteristics ("Beschaffenheitsgarantie").

Infineon Technologies Office (www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information regarding

the application of the product, Infineon Technologies

hereby disclaims any and all warranties and liabilities

of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any

third party.

In addition, any information given in this document is

subject to customer's compliance with its obligations

stated in this document and any applicable legal

requirements, norms and standards concerning

customer's products and any use of the product of

Infineon Technologies in customer's applications.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer's technical departments to

evaluate the suitability of the product for the intended

application and the completeness of the product

information given in this document with respect to

such application.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

Except as otherwise explicitly approved by Infineon

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Infineon Technologies’ products may not be used in

any applications where a failure of the product or any

consequences of the use thereof can reasonably be

expected to result in personal injury.


型号：	BTS50025-1TEA
厂家：	Infineon
描述：	It features Reverse ON functionality protecting the device in reverse polarity condition (reverse battery). The power transistor is built by an N-channel MOSFET with charge pump. It is specially designed to drive high current nominal loads up to 24 A, for application like heaters, glow plugs, fan and pump in the harsh automotive environment. 驱动接口集成电路
文件：	总44页 (文件大小：1309K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BTS50025-1TEA [INFINEON]

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