BTS500601EGAAUMA1中文资料_数据手册_规格书

Datasheet, V1.0, April 2009

BTS50060-1EGA

Smart High-Side Power Switch

PROFET™

Automotive

Smart High-Side Power Switch

BTS50060-1EGA

1

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2

2.1

2.2

Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3

3.1

3.2

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Assignment BTS50060-1EGA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

4

General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1

4.2

4.3

4.4

5

Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Switching losses for resistive loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Output Inductive Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Inverse Operation Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Undervoltage shutdown and restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Electrical Characteristics: Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

5.1

5.2

5.3

5.4

5.5

5.6

5.7

5.8

6

Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Short Circuit Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Over Temperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Infineon® INTELLIGENT LATCH - fault acknowledge and latch reset . . . . . . . . . . . . . . . . . . . . . . . . 19

Reverse Polarity Protection - ReverSave^TM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Loss of Load Protection, Loss of Vbb Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Electrical Characteristics: Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

6.1

6.2

6.3

6.4

6.5

6.6

6.7

6.8

6.9

7

Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Diagnosis Enable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Diagnosis during ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Diagnosis during OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

Diagnosis Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Electrical Characteristics: Diagnostic Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28

7.1

7.2

7.3

7.4

7.5

8

8.1

8.2

Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Hints for PCB layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

9

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

10

Datasheet

2

V1.0, 2009-04-06

Smart High-Side Power Switch

PROFET™

BTS50060-1EGA

1

Overview

Features

•

Part of scalable product family

3.3 and 5V compatible, ground referenced CMOS compatible inputs

Optimized electromagnetic compatibility (EMC)

Very low standby current

Stable behavior at under-voltage

Secure load turn-off while device ground disconnected

ReverSave^TM- Reverse battery protection without external components

Inverse load current capability

PG-DSO-12-16



Infineon INTELLIGENT LATCH

Green Product (RoHS compliant)

AEC qualified

Extended operating voltage range

V_bb(ext)

V_DS(CL)

R_DS(ON)

I_L(nom)

6 .. 28V

42 V

6 mΩ

12 mΩ

15 A

Minimum power stage over-voltage protection

Typical on-state resistance at T_j= 25°C

Maximum on-state resistance at T_j= 150°C

Typical nominal load current

Minimum short circuit shutdown Threshold (SCT)

Maximum stand-by current for whole device with load for T_j≤ 85°C I_bb(OFF)

I_L(SC)high

100 A

10 µA

Description

The BTS50060-1EGA is a single channel high-side power switch in PG-DSO-12-16 package providing embedded



protective functions including ReverSave^TMand Infineon INTELLIGENT LATCH.

The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on

Smart power chip on chip technology.

The BTS50060-1EGA has ground referenced CMOS compatible inputs.

ReverSave^TMis a protection feature that causes the power transistor to switch on in case of reverse polarity. As

a result, the power dissipation is reduced.



Infineon INTELLIGENT LATCH ensures a latched switch-off and reporting in case of fault condition.



The Infineon ENHANCED SENSE pin IS provides a sophisticated diagnostic feedback signal including current

sense functionality, open load in ON-state (via sense signal) and open load and short to battery in OFF-state.

Diagnostic reporting can be enabled and disabled by the DEN-Pin in ON-state and OFF-state. In OFF-state, open

load detection can also be disabled by the DEN-Pin to optimize stand-by current.

Type

Package

Marking

BTS50060-1EGA

PG-DSO-12-16

BTS 50060A

Datasheet

3

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Overview

Protective Functions

•

Short circuit protection with latch

Thermal shutdown with latch



Infineon INTELLIGENT LATCH - reset able latch resulting from protective switch-off

ReverSave^TM- Reverse battery protection by self turn on of power MOSFET

Inverse load current capability - Inverse operation function

Under voltage shutdown with restart

Over voltage protection (including load dump)

Loss of ground protection

Loss of V_bbprotection (with external diode for charged inductive loads)

Electrostatic discharge protection (ESD)

Diagnostic Functions

•

Enable function for diagnosis and reporting

Provides capability for muliplexing of the reporting signal from multiple devices by DEN pin.

In ON-state:

•

Provides analog sense signal of load current in normal operation mode

Provides defined fault current signal in case of overload, over temperature and short circuit to ground

Open load detection in ON-state by load current sense

In OFF-State:

•

Open load and short to battery detection

Applications

•

µC compatible high-side power switch with diagnostic feedback for 12 V system grounded loads

All types of resistive, inductive and capacitive loads

Most suitable for loads with high inrush currents, such as glow plugs, PTC heaters, or lamps

Replaces electromechanical relays, fuses and discrete circuits

Datasheet

4

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Block Diagram and Terms

2

Block Diagram and Terms

2.1

Block Diagram

control chip

base chip

V_bb

voltage sensor

internal

power

T

over

supply

temperature

clamp for

inductive load

IN

gate control

&

driver

logic

over current

switch-off

charge pump

ESD

DEN

IS

protection

OUT

load current sense

open load detection @OFF

Overview.emf

GND

Figure 1

Block Diagram

2.2

Terms

V_bb

I_bb

V_bIS

V_DS

or V_ON

orV_OFF

VBB

I_IN

I_L

IN

OUT

IS

V

V_OUT

I_DEN

I_IS

IN

DEN

V_DEN

V_IS

GND

R_IS

I_GND

Terms. emf

Figure 2

Terms

Datasheet

5

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Pin Configuration

3

Pin Configuration

3.1

Pin Assignment BTS50060-1EGA

(top view)

GND

IN

1

2

3

4

5

6

12

11

10

9

NC

OUT

NC

IS

DEN

NC

8

7

heatslug (V_bb)

PDSO12.emf

Figure 3

Pin Configuration

3.2

Pin Definitions and Functions

1

Symbol I/O Function

GND

-

Ground connection for control chip

2

IN

I

Input: activates power switch. Has an internal pull down resistor.

3

IS

O

Sense Output: With diagnosis enabled, provides a sense current proportional to the

load current during normal operation. During open load in ON provides no current.

Provides a defined fault current in case of overload, over temperature or short circuit

during ON or open load or short to battery during OFF (see Table 1 “Truth Table” on

Page 24)

4

DEN

I

Diagnosis ENable: with high level enables diagnosis reporting and open load / short to

battery detection in OFF. Resets a protective, latched switch-off by falling edge

acknowledgement. Has an internal pull down resistor.

5, 6, 7, NC

12

8, 9, 10, OUT

11

-

Not connected. For recommendation on handling the NC pins, please see Chapter 8.1.

Output: output to the load; pins 8 to 11 must be externally shorted together¹⁾

Supply Voltage: positive power supply for logic and output

O

-

heatslug V_bb

1) Not shorting all output pins will considerably increase the on-state resistance, reduce the peak current capability, the

clamping capability and decrease the current sense accuracy.

Datasheet

6

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

General Product Characteristics

4

General Product Characteristics

4.1

Absolute Maximum Ratings

Operation outside the parameters listed here may cause permanent damage to the device. Exposure to maximum

rating conditions for extended periods may affect device reliability

Absolute Maximum Ratings ¹⁾

Tj = -40 °C to +150 °C (unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Max.

Unit Conditions

Min.

Supply Voltage

4.1.1

4.1.2

4.1.3

Supply voltage

Reverse polarity voltage

V_bb

-V_bb(rev)

0

42

16

28

V

T_j= 25 °C ²⁾

3)

Supply voltage for short circuit protection V_bat(SC)

(single pulse)

4.1.4

Supply Voltage for Load Dump

protection

V_bb(LD)

-

42

V

R_I= 2 Ω ⁴⁾,

R_L= 1Ω

t_d=400 ms

T_j= 25 °C

Input Pins

4.1.5

4.1.6

4.1.7

4.1.8

Voltage at IN pin

Current through IN pin

Voltage at DEN pin

V_IN

I_IN

V_DEN

I_DEN

-0.3

-2

-0.3

-2

6

2

6

2

V

mA

V

-

2)

-

2)

Current through DEN pin

mA

Output Pins

4.1.9

4.1.10

Voltage at sense pin

Current through sense pin IS

V_IS

I_IS

-0.3

V_ZIS

10

V

mA

-

-10²⁾⁵⁾

Power Stages

4.1.11

4.1.12

Load current ⁶⁾

|I_L|

-

I_L(SC)

A

mJ

-

Inductive load switch-off energy (single E_AS

170

V_bb=13.5V⁷⁾,

pulse)

I_L(0)= 50A,

T

_j(0)≤ 150 °C

4.1.13

Inductive load switch-off energy

(repetitive pulses)

E_AR

-

83

mJ

V_bb=13.5V⁷⁾⁸⁾

,

I

_L(0)= 20A,

_j(0)≤105 °C

T

Temperatures

4.1.14

4.1.15

Junction temperature

Dynamic temperature increase while

switching

T_j

∆T_j

-40

-

150

60

°C

K

-

4.1.16

Storage temperature

T_stg

-55

150

°C

-

ESD Susceptibility

4.1.17

ESD susceptibility HBM

V_ESD

kV

according to

EIA/JESD 22-A

114B

IN, DEN, IS, V_bb, OUT

-2

-4

2

4

V_bbversus OUT

1) Not subject to production test, specified by design.

2) t ≤ 2 min

Datasheet

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V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

General Product Characteristics

3) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 15.

4) V_bb(LD)is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. R_Iis the internal resistance of

the Load Dump pulse generator

5) Valid at disabled diagnosis.

6) Over current threshold switch-off is a protection feature. Protection features are not designed for continuous repetitive

operation.

7) See also Chapter 5.5 .

8) Resuls from simulation of temperature swing. Not subject to production test, specified by design.

Note:Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute

maximum rating conditions for extended periods may affect device reliability.

Note:Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are

not designed for continuous repetitive operation.

4.2

Functional Range

Pos.

Parameter

Symbol

Limit Values

Max.

Unit

Conditions

Min.

Supply Voltage

4.2.1

4.2.2

4.2.3

Supply voltage range for normal

V_bb(nor)

9

16

V

-

operation

2)

Extended supply voltage range for V_bb(ext)

6

28¹⁾

V

operation

Operating current

V_IN= 0V, V_DS> V_DS(OL)

V_IN= 5V

I_GND

mA

V

_DEN= 5V,

V_IS< 5.5V,

_bb= V_bb(nor)

I_IS- I_IS(LH)> 30 µA,

_IS(lim)> I_IS,

_bb= V_bb(nor)

-

4

24

59

V

4.2.4

Load current range for sense

I_L(IS)

1.5

A

functionality ¹⁾

I

V

,

V_IN= V_DEN= 5 V,

V

_bIS> 5 V

4.2.5

Junction temperature

T_j

-40

150

°C

-

1) Not subject to production test, specified by design

2) In extended supply voltage range, the device is functional but electrical parameters are not specified.

Note:Within the functional or operating range, the IC operates as described in the circuit description. The electrical

characteristics are specified within the conditions given in the Electrical Characteristics table.

Datasheet

8

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

General Product Characteristics

4.3

Thermal Resistance

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

-

Max.

1.3

2)

3)

4.3.1

4.3.2

4.3.3

Junction to case ¹⁾

R_thjc

R_thj(cc)c

R_thja

-

K/W

Control chip to case ¹⁾

40

-

Junction to ambient ¹⁾

–

device on PCB⁴⁾

-

27

-

1) Not subject to production test, specified by design

2) Specified R_thjcvalue is simulated at natural convection on a cold plate setup. T_a= 25 °C.

3) Specified R_thj(cc)cvalue is simulated at natural convection on a cold plate setup. T_a= 25 °C, I_L= 0A.

4) Specified R_thjavalue and Figure 4 are according Jedec JESD51_7 at natural convection on FR4 2s2p board. The

BTS50060-1EGA was measured on a 76.2 x 114.3 x 1.6 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu)

applying power losses of 1.4W at the channel. According to JESD51-5 a thermal via array under the exposed pad contacted

the first inner copper layer. T_a= 25 °C.

Figure 4 shows the typical transient thermal impedance of BTS50060-1EGA.

ꢂꢀꢀ

ꢁ _{ꢁꢂꢃꢄꢅꢆ}

ꢂꢀ

ꢆꢇꢈ

ꢂ

ꢀꢁꢂ

ꢃꢄꢅ

ꢂꢀ ꢂꢀꢀ ꢂꢀꢀꢀ

ꢀ _ꢀ

ꢀ

ꢀꢁꢀꢂ ꢀꢁꢂ

ꢂ

Figure 4

Transient Thermal Impedance Z_th(JA)=f(t_p) ⁴⁾

4.4

Package

Pos.

4.4.1

4.4.2

Parameter

Jedec humidity category acc. J-STD-020-D

Jedec classification temperature acc. J-STD-020-D 260°C

Value

MSL3

Test Conditions

-

Datasheet

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V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

5

Power Stages

The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump.

5.1

Input Circuit

Figure 5 shows the input circuit of the BTS50060-1EGA. The input resistor to ground ensures that the input signal

is low in case of open input pin. The zener diode protects the input circuit against ESD pulses.

IN

R_IN

GND

Input.emf

Figure 5

Input Circuit

A high signal at the input pin causes the DMOS to switch on.

5.2

Output On-State Resistance

The on-state resistance R_DS(ON)depends on the supply voltage V_bband the junction temperature T_j. Figure 6

shows these dependencies for the typical on-state resistance. The on-state resistance in reverse polarity mode is

described in Chapter 6.5.

ꢂꢀ

ꢂ _{ꢇꢈꢃꢉꢊꢆ}

ꢂꢀ

ꢂ _{ꢇꢈꢃꢉꢊꢆ}

ꢑꢒꢓꢔ

V_bb= 13.5 V

T_j= 25°C

ꢏꢏꢐΩ

ꢋꢁꢊ

ꢏꢏꢐΩ

ꢊ

ꢉꢁꢊ

ꢀ

ꢊ

ꢉꢁꢊ

ꢀ

ꢑꢒꢓꢔ

ꢏꢏꢛꢜ

ꢂꢉꢀ ꢂꢎꢀ

ꢚꢌꢀ

ꢀ

ꢌꢀ

ꢍꢀ

ꢀ

ꢌ

ꢍ

ꢂꢉ ꢂꢎ ꢉꢀ ꢉꢌ ꢉꢍ

ꢏꢏꢕ

ꢄ _ꢌ

ꢀ _{ꢖꢖꢗꢘꢙ}

ꢃ _ꢋꢋ

Figure 6

Typical On-State Resistance

5.3

Output Timing

The power stage is designed for high side configuration (Figure 9).

Datasheet

10

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

The power stage has a defined switching behavior. Defined slew rates as well as edge shaping support PWM’ing

of the load while achieving lowest EMC emission at minimum switching losses.

V_IN

V_{IN (H ),min}

V_IN(L),max

t

t_ON

t_r

t_OFF

V_{OU T}

90%

t

f

50%

30%

10%

(dV/

dt)_ON

dt)_OFF

t

I_bb

t_standby

I_bb(OFF)

SwitchOn.emf

Figure 7

Switching a Load (resistive)

5.4

Switching losses for resistive loads

Switching the device on and off may cause switching losses E_ONand E_OFF. In case of a resistive load, the switching

losses depend on the supply voltage V_bbas well as on the load current I_Land the junction temperature T_j. Figure 8

shows this dependencies of the switching losses.

Datasheet

11

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

E _ON,

E _OFF

E _ON,

E _OFF

30

100

mJ

typ.,

T _j= 25°C,

V _bb= 13.5V

25

mJ

R _L= 1Ω

20

15

10

5

10

E _OFF

To be added after final

E _ON

1

E _ON

silicon available.

0,1

0

5

10

15

20

25

V

30

V _bb

0,1

1

10

R _L

Ω

E

_ON,4

E _OFF

mJ

3

2

1

0

E _ON

typ.,

V _bb=13.5V,

R _L= 1Ω

-50

0

50

100

°C

150

T _j

Figure 8

Typical switching losses E_ONand E_OFF

5.5

Output Inductive Clamp

When switching off inductive loads, the output voltage V_OUTdrops below ground potential due to the inductive

properties of the load ( -di_L/dt = -v_L/L ; -V_OUT≅ -V_L).

Datasheet

12

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

VBB

control chip

base chip

V_DS(CL)

V_bb

i_L

OUT

V_OUT

GND

OutputClamp.emf

Figure 9

Output Clamp

To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop

across the device at a certain level. At nominal battery voltage the output is clamped to V_OUT(CL). At over voltages

the output is clamped to V_DS(CL). See Figure 9 and Figure 10 for details. The maximum allowed load inductance

is limited.

V_OUT

ON

OFF

V_bb

V_{DS( CL)}

t

V_{DS( CL)}

V_OUT(CL)

I_L

V_bb

V_OUT(CL)

V_OUT

InductiveLoad.emf

Figure 10 Switching an Inductance

Maximum Load Inductance

While de-energizing inductive loads, energy has to be dissipated in the BTS50060-1EGA. This energy can be

calculated by the following equation:

– V_OUT(CL)





R_L⋅ I_L

V_OUT(CL)

L

R_L

------------------------------

------

E = (V_bb+ V_OUT(CL)) ⋅

⋅ ln 1 + ------------------------- + I_L

⋅





R_L





In the event of de-energizing very low ohmic inductances (R_L≈0) the following, simplified equation can be used:

V_DS(CL)

2

1

--

------------------------------------

V_DS(CL)– V_bb

E = LI_L

⋅

2

The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 11 for the

maximum allowed energy dissipation.

Datasheet

13

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

T_j(0)= 105°C, V_bb= 13.5V

T_j(0)= 150°C, V_bb= 13.5V

ꢝꢊꢀ

180

ꢆ _ꢅꢈ

E _AR

mJ

160

ꢐꢞ

ꢝꢀꢀ

140

120

100

80

ꢉꢊꢀ

ꢉꢀꢀ

ꢂꢊꢀ

ꢂꢀꢀ

ꢊꢀ

60

40

20

ꢀ

0

A

80 100

I _L(0)

!

ꢍꢀ ꢂꢀꢀ

ꢅ _ꢍꢃꢎꢆ

ꢀ

ꢉꢀ

ꢌꢀ

ꢎꢀ

0

20

40

60

Figure 11 Maximum energy dissipation^{1) 2)}

Note:Clamping overrides all protection functionalities. In order to avoid device destruction resulting from inductive

switch-off or over voltage the device has to be operated within the maximum ratings.

5.6

Inverse Operation Capability

The BTS50060-1EGA can be operated in inverse load current condition (+V_OUT> +V_bb). The device can not block

the current flow during inverse mode.

In ON condition a voltage drop across the activated channel of

-V_ON(inv)=R_ON(inv)*(-I_L) can be observed.

In OFF condition a voltage drop across the intrinsic body diode of -V_OFF(inv)=f(-I_L) can be observed.

As long as the inverse current does not exceed |-I_L| ≤ |-I_L(inv)| the logic will operate and report according Table 1

and the BTS50060-1EGA will be able to remain in ON mode.

+V_bb

VBB

control chip

base chip

V_ON(inv)

V_bb

GND

OUT

+

-

-I_L

Inverse_capability.emf

Figure 12 Inverse current capability

1) Not subject to production test, specified by design.

2) Resuls for E_ARfrom simulation of temperature swing.

Datasheet

14

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

Note:Activation of any protection mechanism will not block the current flow. Over temperature detection and

current sense is not functional during inverse mode.

5.7

Undervoltage shutdown and restart

The BTS50060-1EGA is supplied by V_bb. The internal logic permanently monitors the supply voltage V_bb. In the

event that the supply voltage drops below the under voltage shutdown threshold V_bb(u), the BTS50060-1EGA will

switch off. If the supply voltage reaches nominal operating voltage range V_bb(ext), the BTS50060-1EGA will switch

on after a delay t_delay(UV), assuming V_IN=High. Protective latch is reset by undervoltage shutdown.

V_bb

V_bb(ext)

V_bb(u)

t

V_OUT

ON

t_delay(UV)

Z

t

Undervoltage.emf

Figure 13 Undervoltage shutdown and restart

Datasheet

15

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

5.8

Electrical Characteristics: Power Stages

Note:Characteristics show the deviation of parameters at the given supply voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing.

V

_bb= 9 V to 16 V, T_j= -40 °C to +150 °C (unless otherwise specified)

typical values: V_bb= 13.5 V, T_j= 25 °C

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

General

5.8.1

2)

Stand-by current

T_j= -40 °C, T_j= 25 °C

T_j≤ 85 °C ¹⁾

I_bb(OFF)

µA

,

-

6

8

10

|V_IN|=|V_DEN|≤0.3V³⁾,

V

_OUT=V_IS=0V,

T_j= 150 °C

100

t > t_standby,

no fault condition

5.8.2

Stand-by time ^{1) 2)}

t_standby

-

0.5

1

ms

|V_IN|=|V_DEN|≤0.3V,

V

-

_OUT=V_IS=0V

5.8.3

5.8.4

Undervoltage shutdown¹⁾

V_bb(u)

t_delay(UV)

-

5.7

10

6

-

V

ms

Undervoltage recovery time¹⁾

Input characteristics

5.8.5

5.8.6

5.8.7

5.8.8

L-input level

H-input level

input hysteresis

input pull down resistor

V_IN(L)

V_IN(H)

V_IN(hys)

R_IN

-0.3

2.0

-

1.0

5.5

-

V

mV

-

1)

100

50

200 kΩ

-

Output characteristics

5.8.9

On-state resistance

R_DS(ON)

mΩ

V_IN=5V, I_L=20A

T_j=25°C

-

6

8.5

8

-

T_j=150°C

12

-

V_bb=6V, T_j=25°C

V_bb=6V, T_j=150°C

10

20

-

5.8.10 Nominal load current ¹⁾⁴⁾

5.8.11 Output leakage current

5.8.12 Output clamp during switch-off

I_L(nom)

-

15

3

A

T_A= 85 °C

T_j≤ 150 °C

I_L(OFF)

-

100 µA

V_IN=V_DEN=0V,

V

_OUT=0V

5)

-V_OUT(CL)

16

42

18

20

50

51

20

25

-

V

_OUT≥V_bb−V_DS(CL)

,

I_L= 40 mA

V

_OUT≥V_bb−V_DS(CL)

I_L= 20 A ¹⁾

5)

5.8.13 Output clamp during over voltage V_DS(CL)

V_DS≤V_bb-V_OUT(CL)

,

I_L= 40 mA

5)

-

V_DS≤V_bb-V_OUT(CL)

I_L= 20 A ¹⁾

5.8.14 Switch-On energy 5N95% V_OUT

5.8.15 Switch-Off energy 95P5% V_OUT

E_ON

E_OFF

R_ON(inv)

-

3

3.5

5

mJ

mΩ

V_bb= 13.5 V,

R_L= 1 Ω

5.8.16 Inverse operation

on-state resistance

T_j=25°C

V_IN= 5 V,

I_L= -20 A,

no protective

switch-off

-

6

8.5

-

12

T_j=150°C

Datasheet

16

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Power Stages

V

_bb= 9 V to 16 V, T_j= -40 °C to +150 °C (unless otherwise specified)

typical values: V_bb= 13.5 V, T_j= 25 °C

Pos. Parameter

Symbol

Limit Values

Typ. Max.

Unit

Conditions

Min.

5.8.17 Inverse operation output voltage

-V_OFF(inv)

mV

V_IN=0V,

drop

I_L= -10 A

T_j=25°C

T_j=150°C

-

20

700

400

-

900

800

-

5.8.18 Inverse current capability¹⁾

-I_L(inv)

A

-

Timings

5.8.19 Turn-on time to

t_ON

µs

V

_bb= 13.5 V

R_L= 1Ω

_bb= 13.5 V

R_L= 1 Ω

_bb= 13.5 V

R_L= 1 Ω

_bb= 13.5 V

R_L= 1 Ω

90%V_OUT

-

250

0.12

500

0.21

5.8.20 Turn-off time to

t_OFF

µs

V

10%V_OUT

5.8.21 Slew rate On 30N50% V_OUT

(dV/

V/µs

V

dt)_ON

0.07

5.8.22 Slew rate Off 50P30% V_OUT

T_j= -40 °C, T_j= 25 °C

T_j≤ 85 °C¹⁾

-(dV/

V

dt)_OFF

0.07

0.12

0.23

0.215

0.21

T_j= 150 °C

1) Not subject to production test, specified by design

2) In case of protective switch-off STANDBY is only reached if the fault was acknowledged while IN=LOW by

DEN=HIGHPLOW and t_standbyexpired. See also Chapter 6.4 for details.

3) Tested at V_IN=V_DEN=0V only

4) according JESD51_7, FR4 2s2p board, 76.2 x 114.3 x 1.6 mm, 2x70µm Cu, 2x35µm Cu.

5) See Figure 10.

Datasheet

17

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Protection Functions

6

Protection Functions

The BTS50060-1EGA provides embedded protective functions. Integrated protection functions are designed to

prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as

“outside” normal operating range. Protection functions are neither designed for continuous nor repetitive

operation.

6.1

Short Circuit Protection

The internal logic permanently monitors the load current I_L. In the event the load current exceeds the short circuit

shutdown threshold (I_L>I_L(SC)), the device will switch off immediately. Any protective switch off latches the output.

Please refer to Figure 14 for details. The protective switch off remains latched until the fault is acknowledged and

reset by a falling edge at the DEN pin. See also Chapter 6.4.

V_IN

t

V_DEN

t

I_L

I_L(SC)

t

reset

latch

reset

latch

reset

latch

I_L(SC)_detect.emf

Figure 14 Shutdown by short circuit current detection

Before switching on, the device is measuring the battery voltage V_bb(0). In case V_bb(0)is above V_bb(SCT), the short

circuit current threshold I_L(SC)highis reduced to a lower level I_L(SC)low

.

Note:In case of a short circuit between OUT and ground, an impedance between V_batand V_bbpin of the device

(see Figure 15) may cause the device’s supply voltage to drop below V_bb(u)before short circuit shutdown

threshold is reached. In that case, the device will detect an undervoltage condition and behave as described

in Chapter 5.7.

6.2

Short Circuit Impedance

The capability to handle single short circuit events depends on the battery voltage as well as on the primary and

secondary short impedance. Figure 15 outlines allowable combinations for a single short circuit event of

maximum, secondary inductance for given secondary resistance.

Datasheet

18

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Protection Functions

15

L_SC

V_bb

L_SC

R_SC

µH

5uH

IN OUT

10

PROFET

Applicable impedances

for:

10mΩ

GND

V

_bat≤ V_bat(SC)

V_bat

5

I

_L(SC)= I_L(SC)Highfor

V_bb< V_bb(SCT)

I_L(SC)= I_L(SC)Lowfor

V_bb≥ V_bb(SCT)

SHORT

;

CIRCUIT

;

0

short_circuit.emf

0

10

20

30 mΩ 50

R_SC

L-R.emf

Figure 15 Short circuit

6.3

Over Temperature Protection

The internal logic permanently monitors the junction temperature of the output stage. In the event of an over

temperature (T_j> T_jt) the output will switch off immediately. Please refer to Figure 16 for details.The protective

switch off remains latched until the fault is acknowledged and reset by a falling edge at the DEN pin. See also

Chapter 6.4.

V_IN

t

V_DEN

ϑ_jt

t

ϑ_j

reset

latch

reset

latch

reset

latch

Over_Temp.emf

Figure 16 Over temperature detection

6.4

Infineon^®INTELLIGENT LATCH - fault acknowledge and latch reset

®

The BTS50060-1EGA provides Infineon INTELLIGENT LATCH to avoid permanent resetting of a protective,

latched switch off in PWM applications. To reset a latched protective switch off the fault has to be acknowledged

by a falling edge at the DEN pin. For a reset signal it’s recommended to set the DEN signal to HIGH for 20µs before

setting DEN to LOW for 20µs.

Please refer to Figure for details.

Datasheet

19

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Smart High-Side Power Switch

BTS50060-1EGA

Protection Functions

IN

t

DEN

over temp. /

short circuit

V_OUT

I_bb

latch

reset

latch

reset

fault_acknowledge.emf



Infineon INTELLIGENT LATCH - fault acknowledge and latch reset

6.5

Reverse Polarity Protection - ReverSave^TM

The device can not block a current flow in reverse battery condition. In order to minimize power dissipation, the

device offers ReverSave^TMfunctionality. Under reverse polarity condition, the output stage will be switched on,

provided a sufficient gate to source voltage is generated V_GS≈V_{GND_bb}. Please refer to Figure 17 for details.

-V_bb

VBB

control chip

base chip

V_ON(rev)

V_bb

OUT

GND

-I_L

Reverse.emf

Figure 17 Reverse battery protection

Use the following formula for estimation of overall power dissipation P_diss(rev)in reverse polarity mode.

2

P

≈ R

⋅ I

diss(rev)

ON(rev)

L

Note:No protection mechanism is active during reverse polarity. The control chip is not functional. Potentials of

logic pins can become negative. Affected pins have to be protected by means of series resistors.

Datasheet

20

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Smart High-Side Power Switch

BTS50060-1EGA

Protection Functions

6.6

ESD Protection

All logic pins have ESD protection. Beside the output clamp for the power stage as described in Section 5.5 there

is a clamp mechanism implemented for pin IS. See Figure 18 for details.

V_bb

control chip

IN

base chip

DEN

IS

OUT

GND

OverVoltage.emf

Figure 18 Over-Voltage Protection

6.7

Loss of Ground Protection

In case of complete loss of the device ground connections the BTS50060-1EGA securely changes to or remains

in OFF state, if the sense resistor R_ISis higher than 500Ω.

6.8

Loss of Load Protection, Loss of V_bbProtection

In case of loss of load with charged primary inductances the maximum supply voltage has to be limited. It is

recommended to use a Z-diode, a varistor (V_Za< 42 V) or V_bbclamping power switches with connected loads in

parallel.

In case of loss of V_bbconnection with charged inductive loads, a current path with load current capability has to

be provided, to demagnetize the charged inductances. It is recommended to use a diode, a Z-diode or a varistor

(V_Zb< 16 V, V_ZL+V_D< 16 V, ).

For higher clamp voltages currents through all pins have to be limited according to the maximum ratings. Please

refer to Figure 19 for details.

VBB

control

chip

control

chip

base chip

V_Zb

V_Za

OUT

V_D

GND

V_ZL

Vbb_Load_disconnect.emf

Vbb_disconnect.emf

Figure 19 Loss of V_bb

In case of complete loss of V_bbthe BTS50060-1EGA remains in OFF state.

Datasheet

21

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Protection Functions

6.9

Electrical Characteristics: Protection Functions

Note:Characteristics show the deviation of parameters at the given supply voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing

V

_bb= 9 V to 16 V, T_j= -40 °C to +150 °C (unless otherwise specified)

typical values: V_bb= 13.5 V, T_j= 25 °C

Pos. Parameter

Symbol

Limit Values

Typ. Max.

Unit

Conditions

Min.

Over-Load Protection

6.9.1

6.9.2

6.9.3

6.9.4

Short circuit shutdown threshold

I_L(SC)high

100

150

200

95

25

-

A

V_IN= 5 V

(SCT)

V

_bb(0)< V_bb(SCT)

Short circuit shutdown threshold at I_L(SC)low

42

20

70

22

A

V_IN= 5 V

high battery voltages

V

_bb(0)> V_bb(SCT)

Supply voltage for reduced short

V_bb(SCT)

T_jt

V

-

circuit shutdown threshold¹⁾

Thermal shut down temperature

150

170

°C

-

1)

Reverse Battery

6.9.5

On-State resistance in case of

R_ON(rev)

mΩ

I_L= -10A,

R_IS= 1 kΩ

reverse polarity

V_bb=-8V, T_j=150°C ¹⁾

V_bb=-12V, T_j=150°C

-

12

10

20

12

Over-Voltage

6.9.6 Over-voltage protection Sense pin V_IS(CL)

1) Not subject to production test, specified by design

5.5

7

-

V

I_IS= -2 mA

Datasheet

22

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Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

7

Diagnostic Functions



For diagnosis purposes, the BTS50060-1EGA provides an Infineon ENHANCED SENSE signal at the pin IS.

7.1

Diagnosis Enable

In ON-State, diagnosis is allways enabled. Providing a low signal at the DEN pin will disable the reporting. In OFF-

state, both, reporting and diagnosis can be disabled by a low signal at DEN pin. The pin IS will be set to tri-state

mode when a low signal is provided at the DEN pin. A high signal at the DEN pin enables the reporting and the

open load and short to battery diagnosis during OFF mode. A falling edge at the DEN resets a preceding latched

output and reporting condition. Please see Figure 20 and Table 1 for details.

V_bb

V_b,IS

V_DS

VBB

I_IS(fault)

IN

1

0

current

DEN

IS

I_L/k_ILIS

sense

reporting enable

I_L(OL)

V_IS

&

ESD

0

1

protection

I_L

open load

diagnosis

OUT

I_L>I_{L( SC )}

ϑ_j>ϑ_jT

&

≥1

&

S

R

Q

I_IS

≥1

&

V

_DS<V_DS(OL)

open load

@OFF detection

INTELLIGENT LATCH

GND

fault

R_IS

GND

Sense.emf

Figure 20 Block Diagram: Diagnosis

Datasheet

23

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

Table 1

Truth Table

Operation Mode

Input (IN)

Level

Output Level

Diagnostic Output (IS)

DEN = H

I_IS= I_L/ k_ILIS

Z

I_IS(fault)

I_IS<I_L/k_ILIS

Z

DEN = L

Normal Operation (ON)

H

~V_bb

>V_bb

Z

Inverse Operation (-I_L

Short Circuit to GND

Over Temperature

Short Circuit to V_bb

Open Load

Protective switch-off resulting from

Short Circuit to GND or Over

Temperature ¹⁾

)

Z

V_bb

~V_bb

Z

X

L

I_IS(fault)

Z

Normal Operation (OFF)

Z

>V_bb

Z

Inverse Operation (-I_L

Short Circuit to GND

Over Temperature

Short Circuit to V_bb

)

I_IS(fault)

I_IS(fault)²⁾, Z³⁾

>V_bb-V_DS(OL)

<V_bb-V_DS(OL)

I_IS(fault)

Z

Open Load

>V_bb-V_DS(OL)

<V_bb-V_DS(OL)

I_IS(fault)

Z

L = Low Level, H = High Level, Z = high impedance, only leakage provided, potential depends on external circuit

1) Output and fault reporting remains latched until falling DEN edge acknowledge.

2) Before fault acknowledgement and latch reset.

3) After fault acknowledgement and latch reset.

7.2

Diagnosis during ON

During normal operation, an enabled IS pin provides a sense current, which is proportional to the load current as

long as V_b,IS>5V and as long as I_IS*R_IS<V_Z,IS. The ratio of the output current is defined as k_ILIS=I_L/I_IS. During switch-

on sense current is provided after a sense settling time t_sIS(ON). During inverse operation and switch-off no current

is provided.

The output sense current is limited to I_IS,lim. Please refer to Figure 21 for details.

Datasheet

24

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

normal operation

V_IN

t

V_ON

I_L2

I_L

I_L1

I_{IS(lim )}

I_IS

I_IS2

I_IS1

0.9*I_{IS 1}

I_IS(LL)

t

0.1*IIS

t_{sIS (ON )}

t_{sIS (LC)}

t_{sIS (off)}

SwitchOn.emf

Figure 21 Timing of Diagnosis Signal in ON-state

The accuracy of the provided current sense ratio (k_ILIS= I_L/ I_IS) depends on the load current. Please refer to

Figure 22 for details. A typical resistor R_ISof 1 kΩ is recommended (see also Chapter 6.7).

ꢍꢀꢀꢀꢀ

ꢇ _ꢏꢍꢏꢈ

ꢎꢀꢀꢀꢀ

ꢌꢀꢀꢀꢀ

ꢐ"#

ꢑꢒꢓꢔ

ꢐ$%

ꢉꢀꢀꢀꢀ

ꢀ

ꢂꢀ ꢉꢀ ꢝꢀ ꢌꢀ ꢊꢀ ꢎꢀ

!

ꢅ _ꢍ

1)

Figure 22 Current sense ratio k_ILIS

The diagnosis signal can be switched off by a low signal at the diagnosis enable pin DEN. See Figure 23 for

details on the timing between the DEN pin and the diagnosis signal I_IS. Please note that the diagnosis is disabled,

when no signal is provided at the pin DEN.

1) The curves show the behavior based on characterization data. The marked points are described in this Datasheet in

Section 7.5 (Position 7.5.5).

Datasheet

25

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

I_IS

t

t_{sIS( DEN)}

t_{dIS( DEN)}

DEN

t

reset protective latch

sense_enable .emf

Figure 23 Timing of Sense Enable Signal

During fault condition an enabled IS pin provides a defined fault current I_IS(fault).Fault conditions are over-current,

over-temperature and short circuit switch-off. Any protective switch-off during on-state causes a latched OFF of

the output and reporting, until being reset by a falling edge at the pin DEN. See Figure 24 for details.

IN

t

DEN

t

Short /

Over Temp

t

V_OUT

t

I_IS(fault)

I_IS

I_L/k_ILIS

t

latch

reset

latch

reset

f

a

ult acknowledge@O

N

.

e

mf

Figure 24 Fault acknowledge and latch reset

7.3

Diagnosis during OFF

During normal operation a disabled IS pin provides no current.

In case of shorted load to battery, open load or inverse operation an enabled IS pin provides a defined fault current

I_IS(fault). See Figure 25 for details.

IN

t

DEN

t

I_OL

V_OUT

I_IS

V_bb-V_DS(OL)

I_{IS (fault)}

t

t_d(OL)

fault@OFF.emf

Figure 25 Fault reporting

Datasheet

26

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

7.4

Diagnosis Disable

In order to achieve minimum standby current, the IN pin and the DEN pin have to be low level. A possible

preceding fault condition and reporting has to be reset by a falling edge at the pin DEN. See also Chapter 6.4 for

details.

Datasheet

27

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

7.5

Electrical Characteristics: Diagnostic Functions

Note:Characteristics show the deviation of parameters at the given supply voltage and junction temperature.

Typical values show the typical parameters expected from manufacturing.

V

_bb= 9 V to 16 V, T_j= -40 °C to +150 °C (unless otherwise specified)

typical values: V_bb= 13.5 V, T_j= 25 °C

Pos. Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

Input characteristics for Diagnosis Enable

7.5.1

7.5.2

7.5.3

7.5.4

L-input level

H-input level

input hysteresis

input pull down resistor

V_DEN(L)

V_DEN(H)

V_DEN(hys)

R_DEN

-0.3

2.0

–

-

1.0

5.5

-

V

mV

–

1)

100

50

100

21

200 kΩ

–

Load Current Sense

7.5.5

Current sense ratio, static on-

condition

k_ILIS

-

k

V_IN= V_DEN= 5 V,

I_IS< I_IS(lim),

V_IS< V_Z,IS

,

I_L=40A

I_L=10A

I_L=5A

17

15

12.5

9

21

25.6

27.5

31.5

74

V

_b,IS> 5 V

I_L=1.5A

V_IN= 0 (e.g. during de energizing of

disabled

–

inductive loads)

7.5.6

7.5.7

Sense saturation current ¹⁾

I_IS(lim)

3.5

6

10

mA

V

_DEN= 5 V,

_ON< 400 mV, typ.

_b,IS> 5 V

Sense current under fault

conditions

I_IS(fault)

6

mA

_DEN= 5 V,

_b,IS> 5 V,

_ON> 400 mV,typ.

or V_OFF<V_DS(OL)

V_IN=V_DEN=0V

7.5.8

7.5.9

Current sense leakage current

I_IS(LL)

I_IS(LH)

–

0.1

0.5

µA

Current sense offset current

T_j= -40 °C, T_j= 25 °C

T_j= 150 °C

V_IN=V_DEN=5V,

–

8

18

30

60

I_L≤ 0A

7.5.10 Current sense leakage, while

I_IS(dis)

–

1

2

µA

V_IN= 5V,

diagnosis disabled

V

_DEN= 0V

7.5.11 Current sense settling time to 90% t_sIS(ON)

–

350

700 µs

V_IN= 0N5V (switch-

1)

I_{IS_stat.}

on),

V

_DEN= 5 V,

R_L= 0.5 Ω

7.5.12 Current sense settling time to 10% t_sIS(OFF)

–

8

30

µs

V_IN= 5P0V (switch-

1)

I_{IS_stat.}

off),

V

_DEN= 5V,

R_L= 0.5Ω

7.5.13 Current sense settling time to 90% t_sIS(LC)

–

15

8

50

30

µs

V_IN=V_DEN=5V,

1)

I_{IS_stat.}

I_L= 10N20A

7.5.14 Current sense settling time to 90% t_sIS(DEN)

V_IN= 5V,

1)

I_{IS_stat.}

OUT=ON,

V

_DEN= 0N5V

Datasheet

28

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Diagnostic Functions

V

_bb= 9 V to 16 V, T_j= -40 °C to +150 °C (unless otherwise specified)

typical values: V_bb= 13.5 V, T_j= 25 °C

Pos. Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

7.5.15 Current sense deactivation time to t_dIS(DEN)

–

2

20

µs

V_IN= 5V,

1)

10% I_{IS_stat.}

V_DEN= 5P0V

Open Load at OFF state

7.5.16 Open load output current

I_L(OL)

3

5

10

mA

V_IN= 0V,

V

_DEN= 5V,

_DS= 2V

7.5.17 Open load detection threshold

voltage

V_DS(OL)

2

–

2.8

0.3

3.5

1

V

V_IN= 0V,

_DEN= 5V

V_IN= 5P0 V,

V

7.5.18 Open load blanking after negative t_d(OL)

ms

input slope¹⁾

V_DEN= 5V,

V_bb= 13.5V,

1) Not subject to production test, specified by design

Datasheet

29

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Application schematic

8

Application schematic

Figure 26 shows an example for an application schematic.

V_bat

+5V

47nF

VBB

10K

IN

BTS50060-1EGA

10K

LOAD

µC

DEN

OUT

IS

GND

47nF

1k

application_example.emf

GND

Figure 26 application example

Note:This is a simplified example of an application circuit. The function must be verified in the real application.

8.1

Hints for PCB layout

•

Handling of NC pins: It is recommended to connect all NC pins on a defined potential. E.g. pin 7 and pin 12

could be connected to OUT potential, while pin 5 and 6 could be connected to OUT or DEN.

EMC filter cap between Vbb and GND: It is recommended to place the filter cap as close as possible to the

device to minimize the inductance of the loop.

The resistors connecting µC and IN-pin as well as µC and DEN-pin are recommended to protect the µC inputs

against fast electrical transients.

Ground shift: It is recommended to avoid a ground shift between µC ground and device pin GND of more than

0.3V during normal operation.

8.2

Further Application Information

•

Please contact us to get the Pin FMEA

Please contact us to get a test report on short circuit robustness according to AEC Q100-012

Please contact us for Application Note “Diagnosis with BTS500x0-1EGA”

For further information you may contact http://www.infineon.com/

Datasheet

30

V1.0, 2009-04-06

Smart High-Side Power Switch

BTS50060-1EGA

Package Outlines

9

Package Outlines

ꢀ)

±±.ꢀ

7.5

B

+±.±75

-±.±35

±.25

(±.2)

±.ꢀ

C

±±.ꢀ5

±.7

±±.ꢀ

ꢀ2x

±.ꢀ

7.8

(Heatslug)

±±.3

ꢀ±.3

C

±.25 B

Seating Plane

Bottom View

ꢀ)

±±.ꢀ

6.4

A

7

ꢀ2

7

ꢀ

6

ꢀ

6

Index Marking

±.4^+±.ꢀ3

Heatslug

ꢀ

ꢀ2x

±.25

±±.ꢀ

5.ꢀ

M

C A B

5 x ꢀ = 5

ꢀ) Does not include plastic or metal protrusion of ±.ꢀ5 max. per side

PG-DSO-ꢀ2-4, -5, -8, -ꢀꢀ, -ꢀ2, -ꢀ6-PO V±4

8.ꢀ

±.65 MAX.

ꢀ

PG-DSO-ꢀ2-4, -5, -8, -ꢀꢀ, -ꢀ2, -ꢀ6-FP V±ꢀ

Figure 27 PG-DSO-12-16 (Plastic Dual Small Outline Package)

Green Product (RoHS compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with

government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e

Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

You can find all of our packages, sorts of packing and others in our

Dimensions in mm

V1.0, 2009-04-06

Infineon Internet Page “Products”: http://www.infineon.com/products.

Datasheet

31

Smart High-Side Power Switch

BTS50060-1EGA

Revision History

10

Revision History

BTS50060-1EGA

Revision History: V1.0, 2009-04-06

Version

Date

Changes

Datasheet 2009-04-06

Rev. 1.0

Initial version of datasheet.

Datasheet

32

V1.0, 2009-04-06

Edition 2009-04-06

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure

of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may

be endangered.

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.67
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-609代码：	e3
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

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