BTS6143DXT [INFINEON]
Buffer/Inverter Based Peripheral Driver, 8A, MOS, PSSO4, GREEN, PLASTIC, TO-252, DPAK-5;
| 型号： | BTS6143DXT |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver, 8A, MOS, PSSO4, GREEN, PLASTIC, TO-252, DPAK-5 驱动 接口集成电路 |
| 文件： | 总18页 (文件大小：674K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET BTS 6143 D
Smart Highside Power Switch
Reversave
Product Summary
Operating voltage
On-state resistance
Nominal current
Load current (ISO)
Current limitation
•
Reverse battery protection by self turn on of
power MOSFET
V
5.5...38
V
bb(on)
R
10
8
33
75
mΩ
A
A
ON
Features
I
I
I
L(nom)
L(ISO)
•
•
•
•
•
•
•
Short circuit protection with latch
Current limitation
Overload protection
Thermal shutdown with restart
Overvoltage protection (including load dump)
Loss of ground protection
L12(SC)
A
Package
PG-TO252-5-11
(DPAK 5 pin; less than half the size as TO 220 SMD)
Loss of V protection (with external diode for
bb
charged inductive loads)
Very low standby current
•
•
•
•
Fast demagnetisation of inductive loads
Electrostatic discharge (ESD) protection
Optimized static electromagnetic compatibility
(EMC)
Green Product (RoHS compliant)
AEC qualified
•
•
Diagnostic Function
•
Proportional load current sense (with defined fault signal in case of overload operation, overtemperature
shutdown and/or short circuit shutdown)
Application
•
•
•
Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
All types of resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
+ V
bb
R
bb
Voltage
source
Current
limit
Gate
protection
Overvoltage
protection
1, 5
OUT
Limit for
Voltage
sensor
Charge pump
Level shifter
Rectifier
unclamped
ind. loads
I
L
Current
Sense
Output
Voltage
detection
2
Load
IN
Logic
ESD
I
IN
Temperature
sensor
I
IS
PROFET
IS
Load GND
4
V
IN
R
V
IS
IS
Logic GND
Data Sheet
1 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Pin
Symbol
OUT
IN
Function
1
O
I
Output; output to the load; pin 1 and 5 must be externally shorted* .
Input; activates the power switch if shorted to ground.
2
Tab/(3)
V
bb
+
Supply Voltage; positive power supply voltage; tab and pin3 are internally
shorted.
4
IS
S
Sense Output; Diagnostic feedback; provides at normal operation a sense
current proportional to the load current; in case of overload,
overtemperature and/or short circuit a defined current is provided (see
Truth Table on page 8)
5
OUT
O
Output; output to the load; pin 1 and 5 must be externally shorted* .
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Vbb
Vbb
Values
Unit
V
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection 1)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.5 Ω, td= 400 ms, IN= low or high
38
30
45
V
V
2)
VLoad dump
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC)
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
A
°C
59
W
J
Inductive load switch-off energy dissipation 3)
EAS
0.3
single pulse IL = 20 A, Vbb= 12V
T=150 °C:
j
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
VESD
3.0
kV
Current through input pin (DC)
Current through current sense pin (DC)
see internal circuit diagrams page 9
Input voltage slew rate
IIN
IIS
+15, -120
+15, -120
mA
self-limited V/µs
Vbb ≤ 16V : dVbIN / dt
Vbb > 16V 4):
20
1)
Short circuit is defined as a combination of remaining resistances and inductances. See schematic on
page11.
2)
3)
4)
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
See also diagram on page 11.
See also on page 8. Slew rate limitation can be achieved by means of using a series resistor RIN in the input
path. This resistor is also required for reverse operation. See also page 10.
Data Sheet
2 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
--
typ
max
1.1
--
RthJC
chip - case:
K/W
--
80
Thermal resistance
junction - ambient (free air): RthJA
SMD version, device on PCB
--
--
6)
45
55
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at T= 25, V = 12 V unless otherwise specified
j
bb
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
VIN= 0, Vbb= 5.5V, IL = 7.5 A
T=25 °C: RON
T=150 °C:
j
--
--
10
18
14
24
mΩ
j
VIN= 0, Vbb= 12V, IL = 7.5 A
T=25 °C:
T=150 °C:
j
--
--
8
14
10
18
j
Output voltage drop limitation at small load
currents (Tab to pin 1,5) 5)
T=-40...150 °C:
VON(NL)
--
30
65 mV
j
Nominal load current (Tab to pin 1,5)
ISO Proposal: VON ≤ 0.5 V, T = 85°C, Tj ≤ 150°C IL(ISO)
33
8
41
10
--
--
A
C
SMD 6), VON ≤ 0.5 V, T = 85°C, Tj ≤ 150°C
IL(nom)
to 90% VOUT: ton
to 10% VOUT: toff
A
Turn-on time
Turn-off time
--
--
250
250
500
500
µs
RL = 2.2 Ω, T=-40...150 °C
j
Slew rate on
25 to 50% VOUT, RL = 2.2 Ω, T=-40...150 °C
Slew rate off
50 to 25% VOUT, RL = 2.2 Ω, T=-40...150 °C
dV /dton
-dV/dtoff
--
--
0.3
0.3
0.5 V/µs
0.6 V/µs
j
j
5) See figure 7a on page 15.
6)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
bb
connection. PCB is vertical without blown air.
Data Sheet
3 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Parameter and Conditions
Symbol
Values
Unit
at T= 25, V = 12 V unless otherwise specified
j
bb
min.
typ.
max.
Operating Parameters
Operating voltage (VIN=0)
Undervoltage shutdown 7) 8)
T=-40...150 °C: Vbb(on)
5.5
--
--
--
2.5
4
38
3.5
5.5
V
V
V
j
VbIN(u)
Vbb(ucp)
Undervoltage restart of charge pump
Overvoltage protection 9)
VZ,IN
V
63
67
--
Ibb=15 mA
Standby current
IIN=0
Tj=-40...+150°C:
Tj=-40...+120°C: Ibb(off)
Tj=150°C:
--
--
3
6
6
14
µA
Reverse Battery
Reverse battery voltage 10)
-Vbb
--
--
16
V
On-state resistance (pin 1,5 to pin 3)
Vbb= - 8V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ, 8)
RON(rev)
--
--
9.5
16
13
22
T=25 °C:
mΩ
j
T=150 °C:
j
--
--
9
15
12
20
Vbb= -12V, VIN= 0, IL = -7.5 A, RIS = 1 kΩ,T=25 °C:
j
T=150 °C:
j
Integrated resistor in Vbb line
Rbb
--
100
150
Ω
Inverse Operation 11)
Output voltage drop (pin 1,5 to pin 3) 8)
- VON(inv)
--
--
700
300
-- mV
--
IL = -7.5 A, RIS = 1 kΩ,
IL = -7.5 A, RIS = 1 kΩ,
T=25 °C:
j
T=150 °C:
j
Turn-on delay after inverse operation; IL > 0A 8)
VIN(inv) = VIN(fwd) = 0 V
td(inv)
--
1
--
ms
7)
VbIN=Vbb-VIN see schematic on page 8 and page 14.
Not subject to production test, specified by design.
8)
9)
See also V
in schematic page 9.
Z(IN)
10)
11)
For operation at voltages higher then |16V| please see required schematic on page 10.
Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS.
In this case the device switches on with a time delay td(inv) after the transition from inverse to forward mode.
)
Data Sheet
4 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Parameter and Conditions
Symbol
Values
Unit
at T= 25, V = 12 V unless otherwise specified
j
bb
min.
typ.
max.
Protection Functions 12)
Short circuit current limit (Tab to pin 1,5) 13)
14)
Short circuit current limit at VON = 6V
Tj =-40°C: IL6(SC)
--
110
105
90
80
75
60
60
55
50
40
40
35
140
--
A
A
A
A
A
Tj =25°C:
--
Tj =+150°C:
70
--
Short circuit current limit at VON = 12V
Tj(start) =-40°C: IL12(SC)
--
--
45
--
--
33
--
--
20
--
--
15
110
--
tm=170µs
Tj(start) =25°C:
Tj(start) =+150°C:
--
14)
Short circuit current limit at VON = 18V
Tj(start) =-40°C: IL18(SC)
80
--
--
60
--
--
40
--
--
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit current limit at VON = 24V
Tj(start) =-40°C: IL24(SC)
tm=170µs
Tj(start) =25°C:
Tj(start) =+150°C:
14)
Short circuit current limit at VON = 30V
Tj(start) =-40°C: IL30(SC)
25
25
25
Tj(start) =25°C:
Tj(start) =+150°C:
Short circuit shutdown detection voltage
(pin 3 to pins 1,5)
VON(SC)
td(SC1)
2.5
3.5
4.5
V
Short circuit shutdown delay after input current
positive slope, VON > VON(SC), Tj =-40...+150°C
min. value valid only if input "off-signal" time exceeds 30 µs
350
650 1200
µs
Short circuit shutdown delay during on condition14)
VON > VON(SC)
td(SC2)
--
2
--
--
µs
Output clamp (inductive load switch off) 15)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA
VON(CL)
39
42
V
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
150
--
175
10
--
--
°C
K
12)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
13)
14)
15)
Short circuit current limit for max. duration of t
d(SC1)
, prior to shutdown, see also figures 3.x on page 13.
Not subject to production test, specified by design.
See also figure 2b on page 12.
Data Sheet
5 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Parameter and Conditions
Symbol
Values
Unit
at T= 25, V = 12 V unless otherwise specified
j
bb
min.
typ.
max.
Diagnostic Characteristics
Current sense ratio, static on-condition
kILIS
-- 10 000
--
16)
kILIS =IL :IIS, IIS < IIS,lim
,
VIS <VOUT - 5V, VbIN >4.5V
IL = 30A, Tj = -40°C:
Tj = +25°C:
8300 10000 11000
8300 9700 10600
8300 9300 10000
Tj = +150°C:
IL = 7.5A, Tj = -40°C:
Tj = +25°C:
7500 10000 11400
8000 9700 10800
8200 9300 10200
Tj = +150°C:
IL = 2.5A, Tj = -40°C:
Tj = +25°C:
7100 10000 13400
7700 9700 12500
8000 9300 12000
Tj = +150°C:
IL = 0.5A, Tj = -40°C:
Tj = +25°C:
5000 12000 21000
5500 12000 19000
6000 12000 18000
Tj = +150°C:
IIN = 0 (e.g. during deenergizing of inductive loads):
--
0
--
Sense current under fault conditions 17)
V
>1V, typ
T =-40...+150°C:
j
IIS,fault
IIS,lim
4.0
5.2
6.0
7.5 mA
7.5 mA
ON
Sense saturation current
V
<1V, typ
T =-40...+150°C:
j
4.0
ON
Fault-Sense signal delay after input current positive tdelay(fault)
350
650 1200
µs
slope, VON >1V, T = -40...+150°C
j
Current sense leakage current, IIN =0
IIS(LL)
IIS(LH)
IL(MIN)
--
--
0.1
0.1
--
0.5
1
µA
µA
Current sense offset current, VIN =0, IL ≤0
Minimum load current for sense functionality,
50
-- mA
VIN =0, T = -40...+150°C
j
Current sense settling time to IIS static after input
current positive slope, 18)
tson(IS)
--
250
500
µs
IL = 0
Current sense settling time during on condition, 18)
IL = 10 20 A, Tj= -40...+150°C
20 A, Tj= -40...+150°C
tslc(IS)
--
50
67
100
--
µs
Overvoltage protection
Ibb =15mA
63
V
Tj =-40...+150°C: VZ,IS
16)
See also figures 4.x and 6.x on page 13 and 14.
Fault conditions are overload during on (i.e. VON>1V typ.), overtemperature and short circuit; see also truth
table on page 8.
17)
18)
Not subject to production test, specified by design.
Data Sheet
6 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Parameter and Conditions
Symbol
Values
Unit
at T= 25, V = 12 V unless otherwise specified
j
bb
min.
--
--
typ.
max.
2.2 mA
30 µA
Input
Required current capability of input switch
Tj =-40..+150°C:
IIN(on)
1.4
--
Input current for turn-off
Tj =-40..+150°C: IIN(off)
Data Sheet
7 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Truth Table
Input
Output
Current
Current
level
Sense
IIS
level
L
H
Normal
operation
L
H
≈0 (I
)
)
)
)
)
IS(LL)
nominal
19)
L
H
L
H
L
H
L
H
L
H
L
L
L
L
H
H
≈0 (I
Overload
IS(LL)
I
IS,fault
20)
≈0 (I
Short circuit to GND
Overtemperature
IS(LL)
I
IS,fault
≈0 (I
IS(LL)
I
IS,fault
Short circuit to Vbb
Open load
≈0 (I
IS(LL)
21)
<nominal
≈0 (I
≈0 (I
L
H
Z
H
)
IS(LL)
IS(LH)
)
L = "Low" Level
H = "High" Level
Z = high impedance, potential depends on external circuit
Terms
I
bb
3
V
bIN
V
V
ON
bb
I
L
IN
OUT
V
2
bb
1,5
PROFET
R
IN
IS
4
I
V
V
IS
S
IN
bIS
I
D
IN
V
OUT
R
V
IS
IS
Two or more devices can easily be connected in
parallel to increase load current capability.
19)
20)
21)
Overload is detected at the following condition: 1V (typ.) < VON < 3.5V (typ.) . See also page 11.
Short Circuit is detected at the following condition: VON > 3.5V (typ.) . See also page 11.
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Data Sheet
8 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Input circuit (ESD protection)
Inductive and overvoltage output clamp
+ Vbb
V
bb
VZ1
V
R
ON
bb
ZD
V
Z,IN
V
bIN
OUT
IN
PROFET
I
IN
V
ON
is clamped to V
=42V typ
ON(Cl)
V
IN
Overvoltage protection of logic part
ESD-Zener diode: 67 V typ., max 15 mA;
+ Vbb
Current sense output
Normal operation
Rbb
VZ,IN
VZ,IS
RIN
IN
V
Logic
bb
R
ZD
bb
VOUT
V
Z,IS
I
IS,fault
PROFET
IS
IS
V
R
Z,VIS
IS
R
I
V
IS
V
IS
Signal GND
R
IS
R
=100Ω typ., V
= V =67V typ., R =1kΩ
Z,IS IS
bb
Z,IN
nominal. Note that when overvoltage exceeds 67V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
V
=67V (typ.), R =1 kΩ nominal (or 1 kΩ /n, if n
IS
Z,IS
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. Therefore RIS should be less than
Vbb − 5V
.
7.5mA
Note: For large values of R the voltage V can reach
IS
IS
almost V . See also overvoltage protection.
bb
If you don't use the current sense output in your
application, you can leave it open.
Data Sheet
9 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
V
load
disconnect with energised inductive
Reversave (Reverse battery protection)
bb
Provide a current path with load current capability by
V
-
bb
using a diode, a Z-diode, or a varistor. (V +V <39 V if
ZL
D
R
bb
R
=0). For higher clamp voltages currents at IN and
IN
IS have to be limited to 120 mA.
IN
Version a:
OUT
Power
Transistor
R
Logic
IN
V
bb
V
bb
OUT
IN
PROFET
R
L
IS
R
D
IS
V
V
Signal GND
Power GND
D
ZL
R
typ. 1kΩ. Add R for reverse battery protection in
IS
IN
applications with V above 16V;
bb
1
1
0.08A
|Vbb | −12V
recommended value:
+
=
RIN RIS
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through R
IS.
Since the current via R generates additional heat in
bb
the device, this has to be taken into account in the
overall thermal consideration.
Inverse load current operation
V
bb
V
bb
- I
L
OUT
IN
+
-
PROFET
IS
V
+
-
OUT
I
IS
V
IN
V
R
IS
IS
The device can be operated in inverse load current
mode (VOUT > Vbb > 0V). The current sense feature is
not available during this kind of operation (IIS = 0). In
case of inverse operation the intrinsic drain source
diode is eventually conducting resulting in considerably
increased power dissipation.
The transition from inverse to forward mode can result
in a delayed switch on.
Note: Temperature protection during inverse load
current operation is not possible!
Data Sheet
10 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Short circuit detection
Fault Condition: VON > VON(SC) (3.5V typ.) and t> td(SC)
(typ.650 µs).
Inductive load switch-off energy
dissipation
E
bb
E
AS
Overload detection
Fault Condition: VON > 1V typ.
E
E
Load
L
V
bb
i (t)
L
V
+ V
bb
bb
OUT
PROFET
IN
VON
L
IS
{
Z
L
I
E
R
IN
R
OUT
R
L
IS
detection
circuit
Logic
unit
Energy stored in load inductance:
2
L
1
E = / ·L·I
L
2
Short circuit
While demagnetizing load inductance, the energy
dissipated in PROFET is
Short circuit is a combination of primary and
secondary impedance’s and a resistance’s.
E
AS
= Ebb + EL - ER= VON(CL)·i (t) dt,
L
∫
with an approximate solution for R > 0Ω:
L
V
OUT
I ·L
L
I ·R
L L
OUT(CL)
bb
5uH
E =
AS
(V +|V
|) ln (1+
OUT(CL)
)
bb
2·R
|V
|
L
L
SC
SC
Z
PROFET
IN
10mOhm
IS
R
Maximum allowable load inductance for
a single switch off
I
IN
SC
L = f (I ); T
= 150°C, V = 12 V, R = 0 Ω
V
L
j,start
bb
L
bb
L
1000
L [mH]
Allowable combinations of minimum, secondary
resistance for full protection at given secondary
inductance and supply voltage for single short circuit
100
10
1
event
:
L
SC
V
[uH]
15
: 16V
24V
bb
18V
30V
10
5
0,1
R
SC
300 [mOhm]
0
0
100
200
0,01
1
I_L [A]
10
100
Data Sheet
11 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Timing diagrams
Figure 2a: Switching motors and lamps:
Figure 1a: Switching a resistive load,
change of load current in on-condition:
IIN
IIN
VOUT
VOUT
dV/dtoff
90%
t
on
IIL
dV/dton
10%
t
off
t
t
IL
slc(IS)
slc(IS)
IIS
IIS,faut / I IS,lim
t
Load 1
Load 2
t
As long as V
exceed I
< V
Z,IS
the sense current will never
bIS
IS,fault
and/or I
.
IS,lim
IIS
t
son(IS)
t
soff(IS)
Figure 2b: Switching an inductive load:
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
IIN
VOUT
VON(CL)
IL
IIS
t
Data Sheet
12 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Figure 3a: Typ. current limitation characteristic
Figure 3c: Short circuit type two:
shut down by short circuit detection, reset by I =0.
IN
[A]
I
L(SC)
IIN
100
Internal Switch off
IL
80
60
40
20
0
td(SC2)
depending on the
external impedance
VON
1V typ.
I
IS
V
ON
IL
k ilis
I
IS,fault
0
10
VON(SC)
20
30
[V]
t
In case of VON > VON(SC) (typ. 4 V) the device will be
switched off by internal short circuit detection.
Shut down remains latched until next reset via input.
Figure 4a: Overtemperature
Reset if T <T
Figure 3b: Short circuit type one:
shut down by short circuit detection, reset by I =0.
j
jt
IN
IIN
IIN
VON > VON(SC)
IL
I
IL(SC)
IIS
IS,fault
td(SC1)
tm
Auto Restart
VOUT
I
IS
I
IS,fault
t
tdelay(fault)
Tj
Shut down remains latched until next reset via input.
t
Data Sheet
13 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Figure 4b: Overload
T <T
Figure 6a: Current sense versus load current:
j
jt
[mA] I
4
IS
I
IS,lim
IIN
IL
Vbb -V OUT
3
I
L,lim
2
1
VON=1V typ.
RON*I L,lim
IS
I
IS(LH)
I
L
t
0
10
20
30
40 [A]
I
IL
k ilis
L(MIN)
IIS,lim
IIS,fault
Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp
22
Figure 6b: Current sense ratio :
k
ILIS
VOUT
20000
15000
V = 0
IN
V
10000
dynamic, short
Undervoltage
not below
ON(CL)
V
5000
bIN(u)
I
[A]
L
0
0
5
10
20
I = 0
IN
V
ON(CL)
0
Vbb
V
0
V
bIN(u)
bIN(ucp)
22
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised by
means of calibration the value of kILIS for every
single device.
Data Sheet
14 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Figure 7a: Output voltage drop versus load current:
V
[V]
0.1
ON
R
ON
V
0.05
0.0
ON(NL)
I
L
[A]
0
1
2
3
4
5
6
7
8
Data Sheet
15 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Package Outlines
All dimensions in mm
D-Pak-5 Pin: PG-TO252-5-11
Sales Code
BTS 6143 D
Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
16 of 18
Rev. 1.0, 2007-02
®
PROFET BTS 6143 D
Revision History
Version Date
Changes
Rev. 1.0
2007-02-21 RoHS-compliant version of BTS6143D
Page 1, page 16: RoHS compliance statement and Green product feature added
Page 1, page 16: Change to RoHS compliant package PG-TO252-5-11
Legal disclaimer updated
Data Sheet
17 of 18
Rev. 1.0, 2007-02
Edition 2007-02
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body, or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
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