BTS621L1E323 [INFINEON]
Buffer/Inverter Based Peripheral Driver;
| 型号： | BTS621L1E323 |
| 厂家： | 
Infineon |
| 描述： | Buffer/Inverter Based Peripheral Driver 驱动 接口集成电路 |
| 文件： | 总15页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
PROFET
BTS621L1
Smart Two Channel Highside Power Switch
Features
Product Summary
•
Overload protection
Overvoltage protection Vbb(AZ)
43
V
•
•
•
•
•
•
•
Current limitation
V
5.0 ... 34 V
Short circuit protection
Operating voltage
bb(on)
Thermal shutdown
both
channels: each
parallel
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
On-state resistance RON
Load current (ISO)
Current limitation
100
4.4
8
50
8.5
8
mΩ
A
1
)
Reverse battery protection
IL(ISO)
IL(SCr)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
A
•
•
•
•
•
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
TO-220AB/7
Loss of ground and loss of V protection
Electrostatic discharge (ESD) protection
bb
7
7
7
1
1
1
Application
Straight leads
SMD
Standard
•
µC compatible power switch with diagnostic
feedback for 12 V and 24 V DC grounded loads
•
•
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V
bb
4
Current
limit 1
Gate 1
Voltage
source
Overvoltage
protection
protection
V
Logic
OUT1
Limit for
Level shifter
Rectifier 1
Voltage
sensor
unclamped
ind. loads 1
1
7
Temperature
sensor 1
3
6
IN1
IN2
Charge
pump 1
Open load
Short to Vbb
detection 1
Logic
ESD
Charge
pump 2
5
Gate 2
protection
ST
Current
limit 2
OUT2
R
Level shifter
Rectifier 2
Limit for
unclamped
ind. loads 2
Load
Temperature
sensor 2
Open load
R
O1
O2
Short to Vbb
GND
detection 2
GND
PROFET
2
Signal GND
Load GND
1)
With external current limit (e.g. resistor R
=150 Ω) in GND connection, resistor in series with ST
GND
connection, reverse load current limited by connected load.
Semiconductor Group
1 of 15
2003-Oct-01
®
PROFET
BTS621L1
Pin
1
2
Symbol
OUT1 (Load, L)
GND
Function
Output 1, protected high-side power output of channel 1
Logic ground
3
IN1
Input 1, activates channel 1 in case of logical high signal
4
V
Positive power supply voltage,
bb
the tab is shorted to this pin
Diagnostic feedback: open drain, low on failure
Input 2, activates channel 2 in case of logical high signal
Output 2, protected high-side power output of channel 2
5
6
7
ST
IN2
OUT2 (Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
V
Supply voltage (overvoltage protection see page 4)
Vbb
Vbb
43
34
Supply voltage for full short circuit protection
V
Tj Start=-40 ...+150°C
4)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V VLoad dump
60
V
RI3)= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
Load current (Short circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
A
°C
75
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC =150°C const.
one channel, IL = 4.4 A, ZL = 32mH, 0 Ω: EAS
395
790
mJ
both channels parallel, IL = 8.5 A, ZL = 17mH, 0 Ω:
see diagrams on page 9
Electrostatic discharge capability (ESD)
IN: VESD
all other pins:
1.0
2.0
kV
(Human Body Model)
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7
VIN
IIN
IST
-10 ... +16
±2.0
V
mA
±5.0
2)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3)
4)
R = internal resistance of the load dump test pulse generator
I
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Semiconductor Group
2
2003-Oct-01
®
PROFET
BTS621L1
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
K/W
Thermal resistance
chip - case, both channels: RthJC
--
--
1.7
each channel:
junction - ambient (free air):
SMD version, device on PCB5):
--
--
--
3.4
75
R
thJA
--
35
Electrical Characteristics
Parameter and Conditions, each channel
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1 or 7)
IL = 2 A
RON
T=25 °C:
80
100
200
mΩ
j
each channel
T=150 °C:
160
4.4
8.5
j
Nominal load current, ISO Norm (pin 4 to 1 or 7)
VON = 0.5 V, T = 85 °C each channel: IL(ISO)
both channels parallel:
3.5
6.8
--
--
10
A
C
Output current (pin 1 or 7) while GND disconnected
IL(GNDhigh)
--
--
mA
or GND pulled up, V =30 V, V = 0, see diagram
bb
IN
page 8
Turn-on time
Turn-off time
IN
IN
to 90% VOUT: ton
to 10% VOUT: toff
80
80
200
200
400
400
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
dV /dton
-dV/dtoff
0.1
0.1
--
--
1 V/µs
1 V/µs
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V
5)
bb
connection. PCB is vertical without blown air.
Semiconductor Group
3
2003-Oct-01
®
PROFET
BTS621L1
Parameter and Conditions, each channel
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
Operating Parameters
Operating voltage6)
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(on)
5.0
3.5
--
--
--
--
34
V
V
V
j
T =-40...+150°C: Vbb(under)
5.0
j
T =-40...+25°C: Vbb(u rst)
5.0
j
T =+150°C:
j
7.0
Undervoltage restart of charge pump
Vbb(ucp)
5.6
0.2
7.0
--
V
V
--
--
see diagram page 13
T =-40...+150°C:
j
Undervoltage hysteresis
∆Vbb(under)
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection7)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
34
33
--
--
--
0.5
47
43
--
--
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
T =-40...+150°C: Vbb(AZ)
42
j
Standby current (pin 4)
VIN=0
Ibb(off)
--
--
--
14
17
--
30
35
12
µA
µA
Tj=-40...+25°C:
Tj= 150°C:
IL(off)
Leakage output current (included in Ibb(off)
)
VIN=0
Operating current (Pin 2)8), VIN=5 V
both channels on, Tj =-40...+150°C
Operating current (Pin 2)8)
IGND
IGND
--
--
4
2
6
3
mA
mA
one channel on, Tj =-40...+150°C:
6)
7)
8)
At supply voltage increase up to V = 5.6 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
See also V
in table of protection functions and circuit diagram page 8.
ON(CL)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Semiconductor Group
4
2003-Oct-01
®
PROFET
BTS621L1
Parameter and Conditions, each channel
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
typ
max
9)
Protection Functions
Initial peak short circuit current limit (pin 4 to 1
IL(SCp)
or 7)
Tj =-40°C:
11
9
18
14
8
25
22
14
A
A
Tj =25°C:
Tj =+150°C:
5
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 11)
--
8
--
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C: VON(CL)
41
150
--
47
--
10
--
53
--
--
32
V
°C
K
Thermal overload trip temperature
Thermal hysteresis
Tjt
∆Tjt
-Vbb
Reverse battery (pin 4 to 2) 10)
--
V
Reverse battery voltage drop (V > V
)
out
bb
IL = -2.9 A, each channel
T=150 °C: -VON(rev)
--
mV
j
610
--
Diagnostic Characteristics
Open load detection current
Tj=-40 °C: IL (OL)
20
20
2
--
--
3
400
300
mA
V
(on-condition)
Tj=25 ..150°C:
Open load detection voltage11) (off-condition)
VOUT(OL)
4
Tj=-40..150°C:
Internal output pull down
(pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C
RO
4
10
30
kΩ
9)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
10)
Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 8).
11)
External pull up resistor required for open load detection in off state.
Semiconductor Group
5
2003-Oct-01
®
PROFET
BTS621L1
Parameter and Conditions, each channel
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
2.5
typ
max
12)
Input and Status Feedback
Input resistance
RI
3.5
6
kΩ
Tj=-40..150°C, see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Tj =-40..+150°C: VIN(T+)
Tj =-40..+150°C: VIN(T-)
∆ VIN(T)
1.7
1.5
--
--
--
0.5
--
3.5
--
V
V
--
V
Off state input current (pin 3 or 6), VIN = 0.4 V,
IIN(off)
1
50
µA
Tj =-40..+150°C
On state input current (pin 3 or 6), VIN = 3.5 V,
Tj =-40..+150°C
IIN(on)
20
50
90
µA
µs
Delay time for status with open load after switch
td(ST OL4)
100
320
800
off (other channel in off state)
(see timing diagrams, page 12), Tj =-40..+150°C
Delay time for status with open load after switch
td(ST OL5)
td(ST)
--
--
5
20
µs
µs
off (other channel in on state)
(see timing diagrams, page 12), Tj =-40..+150°C
Status invalid after positive input slope
200
600
(open load)
T =-40 ... +150°C:
j
Status output (open drain)
Zener limit voltage T =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage
5.4
--
--
6.1
--
--
--
0.4
0.6
V
j
T =-40...+25°C, IST = +1.6 mA: VST(low)
j
T = +150°C, IST = +1.6 mA:
j
12)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Semiconductor Group
6
2003-Oct-01
®
PROFET
BTS621L1
Truth Table
Normal operation
Open load
IN1
IN2
OUT1
OUT2
ST
BTS621L1
L
L
H
H
L
L
H
L
H
X
L
L
H
L
H
X
L
X
H
L
H
X
X
X
L
H
L
L
L
H
H
Z
Z
H
L
H
X
H
H
H
L
H
X
L
L
L
L
L
X
X
L
L
H
L
H
H
H
H
L
H
L
H
13)
Channel 1
H(L
)
)
H
X
H
X
H
L
13)
Channel 2
Channel 1
L
L
H
L
H
X
L
L
H
L
H
X
X
X
L
H
X
Z
Z
H
L
H
X
H
H
H
L
L
L
X
X
L
L
L
H(L
H
L
14)
Short circuit to V
bb
L
H
15)
H(L
)
)
14)
Channel 2
L
H
15)
H(L
both channel
Overtemperature
H
L
L
H
L
H
L
H
Channel 1
Channel 2
Undervoltage/ Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
Terms
Input circuit (ESD protection)
R
I
I
V
bb
ON1
IN
V
4
V
bb
I
ON2
IN1
V
3
bb
I
IN1
IN2
ST
L1
1
7
ESD-ZDI
OUT1
OUT2
I
I
IN2
I
PROFET
I
6
5
L2
V
GND
I
ST
V
V
GND
2
IN2
IN1
V
ST
OUT1
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
V
I
OUT2
GND
R
GND
13)
14)
With additional external pull up resistor
An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
Low resistance to Vbb may be detected in the ON-state by the no-load-detection
15)
Semiconductor Group
7
2003-Oct-01
®
PROFET
BTS621L1
Open-load detection
Status output
ON-state diagnostic condition: VON < RON * IL(OL); IN
+5V
high
+ V
bb
RST(ON)
ST
ESD-
ZD
V
ON
ON
GND
ESD-Zener diode: 6.1 V typ., max 5 mA;
OUT
R
< 380 Ω at 1.6 mA, ESD zener diodes are not
ST(ON)
Open load
detection
Logic
unit
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
Inductive and overvoltage output clamp
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
+ V
bb
V
Z
R
EXT
VON
OFF
OUT
V
OUT
PROFET
GND
Open load
detection
Logic
unit
R
O
V
ON
clamped to 47 V typ.
Signal GND
Overvolt. and reverse batt. protection
+ V
bb
GND disconnect
V
Z2
R
I
I
IN1
bb
V
4
bb
IN2
Logic
V
3
bb
IN1
1
ST
OUT1
R
ST
PROFET
IN2
6
V
Z1
OUT2
7
ST
5
GND
GND
R
2
GND
V
V
V
V
IN2
IN1
GND
ST
Signal GND
V
= 6.1 V typ., V = 47 V typ., R = 3.5 kΩ typ,
Z2 I
GND
Z1
R
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+)
Due to VGND >0, no VST = low signal available.
.
= 150 Ω
Semiconductor Group
8
2003-Oct-01
®
PROFET
BTS621L1
GND disconnect with GND pull up
Inductive Load switch-off energy
dissipation
E
4
bb
V
3
bb
E
IN1
IN2
ST
AS
1
7
OUT1
OUT2
V
IN1
E
E
Load
L
PROFET
V
6
IN2
bb
IN
V
GND
2
5
OUT
PROFET
=
ST
GND
L
V
V
GND
ST
V
Z
{
bb
R
L
L
E
R
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
V
disconnect with energized inductive
bb
Energy stored in load inductance:
2
load
1
E = / ·L·I
L
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
4
V
3
bb
IN1
IN2
ST
1
7
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0Ω:
OUT1
OUT2
high
PROFET
6
5
IL·L
IL·RL
GND
2
E =
AS
·(Vbb +|VOUT(CL)|)· ln (1+
)
2·RL
|VOUT(CL)|
Maximum allowable load inductance for
a single switch off (both channels parallel)
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0 Ω
V
bb
Normal load current can be handled by the PROFET
itself.
L [mH]
10000
V
disconnect with charged external
bb
inductive load
4
1000
100
10
V
3
bb
IN1
1
7
OUT1
OUT2
high
PROFET
IN2
6
D
ST
5
GND
2
V
bb
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
1
3
5
7
9
11
I
[A]
L
Semiconductor Group
9
2003-Oct-01
®
PROFET
BTS621L1
Typ. transient thermal impedance chip case
Z
Z
thJC = f(tp), one Channel active
thJC [K/W]
10
1
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
[s]
t
p
Typ. transient thermal impedance chip case
Z
Z
thJC = f(tp), both Channel active
thJC [K/W]
1
0.1
D=
0.5
0.2
0.1
0.05
0.02
0.01
0
0.01
1E-5 1E-4 1E-3 1E-2 1E-1 1E0
1E1
[s]
t
p
Semiconductor Group
10
2003-Oct-01
®
PROFET
BTS621L1
Both channels are symmetric and consequently the diagrams
are valid for each channel as well as for permuted channels
Timing diagrams
Figure 1a: V turn on:
Figure 2b: Switching an inductive load
bb
IN1
IN2
IN
V
bb
t
d(ST)
ST
*)
V
OUT1
V
OUT
V
OUT2
I
L
ST open drain
I
L(OL)
t
t
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp:
Figure 3a: Short circuit
IN
shut down by overtempertature, reset by cooling
other channel: normal operation
IN
ST
V
OUT
I
L
I
L(SCp)
I
L(SCr)
I
L
t
ST
t
Heating up may require several milliseconds, depending on
external conditions
Semiconductor Group
11
2003-Oct-01
®
PROFET
BTS621L1
Figure 4a: Overtemperature:
Figure 5b: Open load: detection in ON-state, turn
Reset if T <T
on/off to open load
j
jt
IN1
IN
IN2
channel 2: normal operation
ST
V
OUT1
V
OUT
I
L1
channel 1: open load
T
t
t
t
J
t
d(ST)
d(ST OL4)
d(ST)
d(ST OL5)
ST
t
t
Figure 5c: Open load: detection in ON- and OFF-state
Figure 5a: Open load: detection in ON-state, open
(with R
), turn on/off to open load
EXT
load occurs in on-state
IN1
IN1
IN2
channel 2: normal operation
IN2
channel 2: normal operation
V
V
OUT1
OUT1
IL1
channel 1:
I
channel 1: open load
t
L1
open
load
open
load
normal
load
t
t
d(ST OL1)
t
ST
t
d(ST OL1)
t
d(ST OL2)
t
d(ST OL2)
d(ST)
d(ST)
d(ST OL5)
ST
t
t
td(ST OL5) depends on external circuitry because of high
impedance
td(ST OL1) = 30 µs typ., td(ST OL2) = 20 µs typ
Semiconductor Group
12
2003-Oct-01
®
PROFET
BTS621L1
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V
bb
V
V
V
V
ON(CL)
bb(over)
bb(o rst)
bb
V
V
bb(u cp)
bb(under)
V
bb(u rst)
V
OUT
V
OUT
ST
ST open drain
t
t
Figure 6b: Undervoltage restart of charge pump
V
ON(CL)
V
on
V
bb(over)
V
V
bb(o rst)
bb(u rst)
V
bb(u cp)
V
bb(under)
V
bb
charge pump starts at Vbb(ucp) =5.6 V typ.
Semiconductor Group
13
2003-Oct-01
®
PROFET
BTS621L1
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/7
Ordering code
Q67060-S6304-A2
SMD TO 220AB/7, Opt. E3128 Ordering code
BTS621L1
BTS621L1 E3128A T&R:
Q67060-S6304-A4
Changed since 04.96
Date Change
Dec
td(ST OL4) max reduced from 1500
1996 to 800µs, typical from 400 to
320µs, min limit unchanged
TO 220AB/7, Opt. E3230
Ordering code
Q67060-S6304-A3
EAS maximum rating and diagram
BTS621L1 E3230
added
Zth specification added
max Output leakage current IL(off)
reduced from 20 to 12 µA
increased ESD capability
Typ. reverse battery voltage drop -
VON(rev) added
Semiconductor Group
14
2003-Oct-01
®
PROFET
BTS621L1
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© Infineon Technologies AG 2001
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Semiconductor Group
15
2003-Oct-01
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