BTS7008-1EPZ [INFINEON]
The device is suitable for applications with extended or/and high temperature mission profiles.;型号: | BTS7008-1EPZ |
厂家: | Infineon |
描述: | The device is suitable for applications with extended or/and high temperature mission profiles. |
文件: | 总60页 (文件大小:1658K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BTS7008-1EPZ
PROFET™ +2 12V
1x 8 mΩ
Smart High-Side Power Switch
Package
Marking
PG-TSDSO-14
7008-1Z
1
Overview
Potential Applications
•
•
•
Suitable for resistive, inductive and capacitive loads
Replaces electromechanical relays, fuses and discrete circuits
Driving capability suitable for 10 A loads and high inrush current loads
such as H9 65W / Xenon 65W lamps or equivalent electronic loads (e.g.
LED modules)
•
•
•
Applications with extended or/and high temperature mission profiles
Under the hood applications requiring an extended junction temperature range, up to 175 °C
Suitable for powertrain systems such as transmission applications
VBAT
ZWIRE
Optional
Optional
CVSGND
CVS
RGND
T1
Logic Supply
VDD
GND
VS
GPIO
RIN
IN
OUT
GPIO
RDEN
DEN
COUT0
PROFET™ +2
12V
Microcontroller
DZ2
CVS2
ADC
VSS
RADC
RIS_PROT
IS
CSENSE
DZ1
Logic GND
Power GND
Optional
Chassis GND
*See Chapter 1 „Potential Applications“
App_1CH_INTDIO_CVG.emf
Figure 1
BTS7008-1EPZ Application Diagram. Further information in Chapter 10
Data Sheet
www.infineon.com
Rev. 1.10
2020-12-14
1
BTS7008-1EPZ
PROFET™ +2 12V
Overview
Basic Features
•
•
•
•
•
High-Side Switch with Diagnosis and Embedded Protection
Part of PROFET™ +2 12V Family
ReverseON for low power dissipation in Reverse Polarity
Switch ON capability while Inverse Current condition (InverseON)
Green Product (RoHS compliant)
Protection Features
•
•
•
•
Absolute and dynamic temperature limitation with controlled restart
Overcurrent protection (tripping) with Intelligent Restart Control
Undervoltage shutdown
Overvoltage protection with external components
Diagnostic Features
•
•
•
Proportional load current sense
Open Load in ON and OFF state
Short circuit to ground and battery
Product Validation
Qualified for automotive applications. Product validation according to AEC-Q100 Grade 0.
Description
The BTS7008-1EPZ is a Smart High-Side Power Switch, providing protection functions and diagnosis. The
device is integrated in SMART7 technology.
Table 1
Product Summary
Parameter
Symbol
VS(OP)
Values
4.1 V
Minimum Operating voltage (at switch ON)
Minimum Operating voltage (cranking)
Maximum Operating voltage
VS(UV)
3.1 V
VS
28 V
Minimum Overvoltage protection (TJ ≥ 25 °C)
Maximum current in Sleep mode (TJ ≤ 85 °C)
Maximum operative current
VDS(CLAMP)_25
IVS(SLEEP)_85
IGND(ACTIVE)
RDS(ON)_150
RDS(ON)_175
IL(NOM)
35 V
0.5 µA
4 mA
16.4 mΩ
19 mΩ
10 A
Maximum ON-state resistance (TJ = 150 °C)
Maximum ON-state resistance (TJ = 175 °C)
Nominal load current (TA = 85 °C)
Nominal load current (TA = 125 °C)
IL(NOM)_125
kILIS
6.5 A
Typical current sense ratio at IL = IL(NOM)
9500
Data Sheet
2
Rev.1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Block Diagram and Terms
2
Block Diagram and Terms
2.1
Block Diagram
VS
SupplyVoltage
Monitoring
Overvoltage
Protection
Internal Power Supply
Intelligent Restart
Control
Channel
IS
SENSE Output
Voltage Sensor
T
Overtemperature
Overvoltage
Clamping
IN
ESD
Protection
+
Gate Control
+
Overcurrent
Protection
Driver
Logic
Chargepump
DEN
Input Logic
ReverseON
InverseON
OUT
Internal Reverse
PolarityProtection
Load Current Sense
Output Voltage Limitation
GND Circuitry
GND
Block_PROFET1ch_REVON.emf
Figure 2
Block Diagram of BTS7008-1EPZ
Data Sheet
3
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Block Diagram and Terms
2.2
Terms
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
IVS
VSIS
VS
IIN
VDS
IN
IDEN
DEN
IL
VS
OUT
VIN
IIS
VDEN
IS
VOUT
GND
VIS
IGND
Terms_1CH.emf
Figure 3
Voltage and Current Convention
Data Sheet
4
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
GND
IN
DEN
IS
n.c.
n.c.
n.c.
1
2
3
4
5
6
7
14
13
12
11
10
9
OUT
OUT
OUT
n.c.
n.c.
n.c.
n.c.
VS
expos ed pad (bo tto m)
8
PinOut_PROFET1ch.emf
Figure 4
Pin Configuration
Data Sheet
5
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Pin Configuration
3.2
Pin Definitions and Functions
Table 2
Pin
Pin Definition
Symbol
Function
EP
VS
Supply Voltage
(exposed pad)
Battery voltage
1
2
GND
Ground
Signal ground
IN
Input Channel
Digital signal to switch ON the channel (“high” active)
If not used: connect with a 10 kΩ resistor either to GND pin or to module
ground
3
4
DEN
IS
Diagnostic Enable
Digital signal to enable device diagnosis (“high” active) and to clear the
protection counter of channel
If not used: connect with a 10 kΩ resistor either to GND pin or to module
ground
SENSE current output
Analog/digital signal for diagnosis
If not used: left open
5-7, 8-11 n.c.
12-14 OUT
Not connected, internally not bonded
Output
Protected high-side power output channel1)
1) All output pins of the channel must be connected together on the PCB. All pins of the output are internally connected
together. PCB traces have to be designed to withstand the maximum current which can flow.
Data Sheet
6
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings - General
Table 3
Absolute Maximum Ratings1)
TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design; all voltages
with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Supply pins
Power Supply Voltage
Load Dump Voltage
VS
-0.3
–
–
–
28
35
V
V
–
P_4.1.0.1
P_4.1.0.3
VBAT(LD)
suppressed
Load Dump
acc. to
ISO16750-2
(2010).
Ri = 2 Ω
Supply Voltage for Short Circuit VBAT(SC)
Protection
0
–
–
–
24
16
V
V
Setup acc. to
AEC-Q100-012
P_4.1.0.25
P_4.1.0.5
Reverse Polarity Voltage
-VBAT(REV)
t ≤ 2 min
TA = +25 °C
Setup as
described in
Chapter 10
Current through GND Pin
IGND
-50
–
50
mA
RGND according P_4.1.0.9
to Chapter 10
Logic & control pins (Digital Input = DI)
DI = IN, DEN, DSEL
2)
Current through DI Pin
IDI
-1
-1
–
–
2
mA
mA
P_4.1.0.14
2)
Current through DI Pin
IDI(REV)
10
P_4.1.0.36
Reverse Battery Condition
t ≤ 2 min
IS pin
Voltage at IS Pin
Current through IS Pin
VIS
IIS
-1.5
-25
–
–
VS
V
IIS = 10 μA
P_4.1.0.16
P_4.1.0.18
IIS(SAT),M mA
–
AX
Temperatures
Junction Temperature
Storage Temperature
TJ
-40
-55
–
–
175
175
°C
°C
–
–
P_4.1.0.19
P_4.1.0.20
TSTG
Data Sheet
7
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
Table 3
Absolute Maximum Ratings1) (continued)
TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design; all voltages
with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
ESD Susceptibility
ESD Susceptibility all Pins
(HBM)
VESD(HBM)
-2
–
–
–
–
2
kV
kV
V
HBM3)
P_4.1.0.21
P_4.1.0.22
P_4.1.0.23
P_4.1.0.24
ESD Susceptibility OUT vs GND VESD(HBM)_OU -4
and VS connected (HBM)
4
HBM3)
CDM4)
CDM4)
T
ESD Susceptibility all Pins
(CDM)
VESD(CDM)
-500
500
750
ESD Susceptibility Corner Pins VESD(CDM)_CR -750
V
(CDM)
N
(pins 1, 7, 8, 14)
1) Not subject to production test - specified by design.
2) Maximum VDI to be considered for Latch-Up tests: 5.5 V.
3) ESD susceptibility, Human Body Model “HBM”, according to AEC Q100-002.
4) ESD susceptibility, Charged Device Model “CDM”, according to AEC Q100-011.
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
8
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
4.2
Absolute Maximum Ratings - Power Stages
4.2.1
Power Stage - 8 mΩ
Table 4
Absolute Maximum Ratings1)
TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design; all voltages
with respect to ground, positive current flowing into pin (unless otherwise specified)
Parameter
Symbol
Values
Typ.
–
Unit Note or
Test Condition
Number
Min.
Max.
Maximum Energy Dissipation
Single Pulse
EAS
–
65
mJ
IL = 2*IL(NOM)
TJ(0) = 150 °C
VS = 28 V
P_4.2.1.5
Maximum Energy Dissipation
Repetitive Pulse
EAR
–
–
–
–
–
–
20
16
mJ
IL = IL(NOM)
TJ(0) = 85 °C
VS = 13.5 V
1M cycles
P_4.2.1.6
P_4.2.1.8
P_4.2.1.3
Maximum Energy Dissipation
Repetitive Pulse
EAR_125
mJ
A
IL = IL(NOM)_125
TJ(0) = 125 °C
VS = 13.5 V
1M cycles
Load Current
|IL|
IL(OVL),M
–
AX
1) Not subject to production test - specified by design.
4.3
Functional Range
Table 5
Functional Range - Supply Voltage and Temperature1)
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Supply Voltage Range for
Normal Operation
VS(NOR)
6
13.5
18
V
–
P_4.3.0.1
P_4.3.0.2
2)3)
Lower Extended Supply
VS(EXT,LOW)
3.1
–
6
V
Voltage Range for Operation
(parameter
deviations possible)
Data Sheet
9
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
Table 5
Functional Range - Supply Voltage and Temperature1) (continued)
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
Supply Voltage Range
reached after Overload
Protection activation
leading to“Undervoltage on
VS” condition
VS(EXT,CVG)
–
–
3.1
V
CVSGND is required
when the Overload
Protection is
triggered (see
Chapter 8.2) and
the observed
P_4.3.0.7
number of retries is
different from what
specified in
Chapter 8.3.1
3)
Upper Extended Supply
Voltage Range for Operation
VS(EXT,UP)
18
–
–
28
V
P_4.3.0.3
P_4.3.0.5
(parameter
deviations possible)
Junction Temperature
TJ
-40
175 °C
–
1) Not subject to production test - specified by design.
2) In case of VS voltage decreasing: VS(EXT,LOW),MIN = 3.1 V. In case of VS voltage increasing: VS(EXT,LOW),MIN = 4.1 V.
3) Protection functions still operative.
Note:
Within the functional or operating range, the IC operates as described in the circuit description. The
electrical characteristics are specified within the conditions given in the Electrical Characteristics
tables.
4.4
Thermal Resistance
Note:
This thermal data was generated in accordance with JEDEC JESD51 standards. For more
information, go to www.jedec.org.
Table 6
Thermal Resistance1)
Parameter
Symbol
Values
Typ.
2.3
Unit Note or
Test Condition
Number
Min.
Max.
2)
Thermal Characterization
Parameter Junction-Top
ΨJTOP
–
3.7
K/W
P_4.4.0.1
P_4.4.0.2
2)
Thermal Resistance
Junction-to-Case
RthJC
–
–
1.7
2.8
–
K/W
simulated at
exposed pad
2)
Thermal Resistance
Junction-to-Ambient
RthJA
32.6
K/W
P_4.4.0.3
1) Not subject to production test - specified by design.
2) According to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; the Product (Chip + Package) was
simulated on a 76.2 × 114.3 × 1.5 mm board with 2 inner copper layers (2 × 70 µm Cu, 2 × 35 µm Cu). Where applicable
a thermal via array under the exposed pad contacted the first inner copper layer. Simulation done at TA = 105°C,
P
DISSIPATION = 1 W.
Data Sheet
10
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
4.4.1
PCB Setup
70 µm modeled (traces, cooling area)
70 µm, 5% metalization*
*: means percentual Cu metalization on each layer
PCB_Zth_1s0p.emf
Figure 5
1s0p PCB Cross Section
70 µm modeled (traces)
35 µm, 90% metalization*
35 µm, 90% metalization*
70 µm, 5% metalization*
*: means percentual Cu metalization on each layer
PCB_Zth_2s2p.emf
Figure 6
2s2p PCB Cross Section
PCB 1s0p + 600 mm2 cooling
PCB 2s2p / 1s0p footprint
PCB_sim_setup_TSDSO14.emf
Figure 7
PCB setup for thermal simulations
PCB_ 2s2p_vias_TSDSO14.emf
Figure 8
Thermal vias on PCB for 2s2p PCB setup
Data Sheet
11
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
General Product Characteristics
4.4.2
Thermal Impedance
Figure 9
Typical Thermal Impedance. PCB setup according Chapter 4.4.1
Figure 10 Thermal Resistance on 1s0p PCB with various cooling surfaces
Data Sheet
12
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Logic Pins
5
Logic Pins
The device has 2 digital pins.
5.1
Input Pin (IN)
The input pin IN activates the output channel. The input circuitry is compatible with 3.3V and 5V
microcontroller (see Chapter 10 for the complete application setup overview). The electrical equivalent of the
input circuitry is shown in Figure 11. In case the pin is not used, it must be connected with a 10 kΩ resistor
either to GND pin or to module ground.
VS
IN
VS(CLAMP)
IDI
IDI
ESD
VDI(CLAMP)
VDI
GND
IGND
Input_IN_INTDIO.emf
Figure 11 Input circuitry
The logic thresholds for “low” and “high” states are defined by parameters VDI(TH) and VDI(HYS). The relationship
between these two values is shown in Figure 12. The voltage VIN needed to ensure a “high” state is always
higher than the voltage needed to ensure a “low” state.
VDI
VDI(TH ),MAX
VDI(TH)
VDI(HYS)
VDI(TH ),MIN
t
Internal channel
activation signal
0
x
1
x
0
t
Input_VDITH_2.emf
Figure 12 Input Threshold voltages and hysteresis
Data Sheet
13
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Logic Pins
5.2
Diagnosis Pin
The Diagnosis Enable (DEN) pin controls the diagnosis circuitry and the protection circuitry. When DEN pin is
set to “high”, the diagnosis is enabled (see Chapter 9.2 for more details). When it is set to “low”, the diagnosis
is disabled (IS pin is set to high impedance).
The transition from “high” to “low” of DEN pin clears the protection latch of the channel depending on the
logic state of IN pin and DEN pulse length (see Chapter 8.3 for more details). The internal structure of
diagnosis pins is the same as the one of input pins. See Figure 11 for more details.
5.3
Electrical Characteristics Logic Pins
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Digital Input (DI) pins = IN, DEN
Table 7
Electrical Characteristics: Logic Pins - General
Parameter
Symbol
Values
Typ.
1.3
Unit Note or
Test Condition
Number
Min.
Max.
Digital Input Voltage
Threshold
VDI(TH)
0.8
2
V
See Figure 11 and P_5.4.0.1
Figure 12
1)
Digital Input Clamping
Voltage
VDI(CLAMP1)
–
7
–
V
P_5.4.0.2
IDI = 1 mA
See Figure 11 and
Figure 12
Digital Input Clamping
Voltage
VDI(CLAMP2)
VDI(HYS)
IDI(H)
6.5
–
7.5
0.25
10
8.5
–
V
IDI = 2 mA
See Figure 11 and
Figure 12
1)
P_5.4.0.3
P_5.4.0.4
P_5.4.0.5
P_5.4.0.6
Digital Input Hysteresis
V
See Figure 11 and
Figure 12
Digital Input Current
(“high”)
2
25
25
µA
µA
VDI = 2 V
See Figure 11 and
Figure 12
Digital Input Current (“low”) IDI(L)
2
10
VDI = 0.8 V
See Figure 11 and
Figure 12
1) Not subject to production test - specified by design.
Data Sheet
14
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Supply
6
Power Supply
The BTS7008-1EPZ is supplied by VS, which is used for the internal logic as well as supply for the power output
stages. VS has an undervoltage detection circuit, which prevents the activation of the power output stage and
diagnosis in case the applied voltage is below the undervoltage threshold.
6.1
Operation Modes
BTS7008-1EPZ has the following operation modes:
•
•
•
Sleep mode
Active mode
Stand-by mode
The transition between operation modes is determined according to these variables:
•
•
Logic level at IN pin
Logic level at DEN pin
The state diagram including the possible transitions is shown in Figure 13. The behavior of BTS7008-1EPZ as
well as some parameters may change in dependence from the operation mode of the device. Furthermore,
due to the undervoltage detection circuitry which monitors VS supply voltage, some changes within the same
operation mode can be seen accordingly.
There are three parameters describing each operation mode of BTS7008-1EPZ:
•
•
•
Status of the output channel
Status of the diagnosis
Current consumption at VS pin (measured by IVS in Sleep mode, IGND in all other operative modes)
Table 8 shows the correlation between operation modes, VS supply voltage, and the state of the most
important functions (channel status, diagnosis).
Power-up
Unsupplied
VS > VS(OP)
IN = „low“
& DEN = „low“
IN = „high“
Sleep
IN = „low“ &
DEN = „high“
IN = „low“
& DEN = „low“
IN = „high“
Active
DEN = „high“
Stand-by
IN = „low“
& DEN = „high“
DEN = „low“
PowerSupply_OpMode_PROFET.emf
Figure 13 Operation Mode State Diagram
Data Sheet
15
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Supply
Table 8
Device function in relation to operation modes and VS voltage
Operative Mode Function
VS in undervoltage
VS not in undervoltage
Sleep
Channel
Diagnosis
Channel
Diagnosis
Channel
Diagnosis
OFF
OFF
OFF
OFF
OFF
OFF
OFF
OFF
Active
available
available in OFF and ON states
OFF
Stand-by
available in OFF state
6.1.1
Unsupplied
In this state, the device is either unsupplied (no voltage applied to VS pin) or the supply voltage is below the
undervoltage threshold.
6.1.2
Power-up
The Power-up condition is entered when the supply voltage (VS) is applied to the device. The supply is rising
until it is above the undervoltage threshold VS(OP) therefore the internal Power-On signals are set.
6.1.3
Sleep mode
The device is in Sleep mode when all Digital Input pins (IN, DEN) are set to “low”. When BTS7008-1EPZ is in
Sleep mode, the output is OFF. The current consumption is minimum (see parameter IVS(SLEEP)). No
Overtemperature or Overload protection mechanism is active when the device is in Sleep mode. The device
can go in Sleep mode only if the protection is not active (counter = 0, see Chapter 8.3.1 for further details).
6.1.4
Stand-by mode
The device is in Stand-by mode as long as DEN pin is set to “high” while input pin is set to “low”. All channels
are OFF therefore only Open Load in OFF diagnosis is possible. Depending on the load condition, either a fault
current IIS(FAULT) or an Open Load in OFF current IIS(OLOFF) may be present at IS pin. In such situation, the current
consumption of the device is increased.
6.1.5
Active mode
Active mode is the normal operation mode of BTS7008-1EPZ. The device enters Active mode as soon as IN pin
is set to “high”. Device current consumption is specified with IGND(ACTIVE) (measured at GND pin because the
current at VS pin includes the load current). Overload, Overtemperature and Overvoltage protections are
active. Diagnosis is available.
Data Sheet
16
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Supply
6.2
Undervoltage on VS
Between VS(OP) and VS(UV) the undervoltage mechanism is triggered. If the device is operative (in Active mode)
and the supply voltage drops below the undervoltage threshold VS(UV), the internal logic switches OFF the
output channel.
As soon as the supply voltage VS is above the operative threshold VS(OP), if the input pin is set to “high” the
channel is switched ON again. The restart is delayed with a time tDELAY(UV) which protects the device in case the
undervoltage condition is caused by a short circuit event (according to AEC-Q100-012), as shown in Figure 14.
If the device is in Sleep mode and one input is set to “high”, the corresponding channel is switched ON if
VS > VS(OP) without waiting for tDELAY(UV)
.
VS
VS(OP)
VS(HYS)
VS(UV)
t
t
Channel
activation signal
VOUT
tDELAY(UV)
t
PowerSupply_UVRVS.emf
Figure 14 VS undervoltage behavior
Data Sheet
17
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Supply
6.3
Electrical Characteristics Power Supply
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
Table 9
Electrical Characteristics: Power Supply - General
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
VS pin
Power Supply Undervoltage VS(UV)
Shutdown
1.8
2.3
3.0
3.1
V
VS decreasing
IN = “high”
From VDS ≤ 0.5 V to
P_6.4.0.1
V
DS = VS
See Figure 14
Power Supply Minimum
Operating Voltage
VS(OP)
2.0
4.1
V
VS increasing
IN = “high”
P_6.4.0.3
From VDS = VS to
V
DS ≤ 0.5 V
See Figure 14
1)
Power Supply Undervoltage VS(HYS)
Shutdown Hysteresis
–
0.7
5
–
V
P_6.4.0.6
P_6.4.0.7
P_6.4.0.9
VS(OP) - VS(UV)
See Figure 14
Power Supply Undervoltage tDELAY(UV)
Recovery Time
2.5
16
7.5
30
ms
V
dVS/dt ≤ 0.5 V/µs
VS ≥ -1 V
See Figure 14
1)
Breakdown Voltage
between GND and VS Pins in
Reverse Battery
-VS(REV)
–
IGND(REV) = 7 mA
TJ = 150 °C
1) Not subject to production test - specified by design.
Data Sheet
18
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Supply
6.4
Electrical Characteristics Power Supply - Product Specific
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
6.4.1
BTS7008-1EPZ
Table 10 Electrical Characteristics: Power Supply BTS7008-1EPZ
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
1)
Power Supply Current
IVS(SLEEP)_85
–
0.01
0.5
µA
P_6.5.10.1
Consumption in Sleep Mode
with Loads at TJ ≤ 85 °C
VS = 18 V
VOUT = 0 V
IN = DEN = “low”
TJ ≤ 85 °C
Power Supply Current
IVS(SLEEP)_150
–
2.5
10
µA
VS = 18 V
P_6.5.10.2
Consumption in Sleep Mode
with Loads at TJ = 150 °C
VOUT = 0 V
IN = DEN = “low”
TJ = 150 °C
Operating Current in Active IGND(ACTIVE)
Mode
–
–
3
4
mA
mA
VS = 18 V
IN = DEN = “high”
P_6.5.10.3
P_6.5.10.5
Operating Current in Stand- IGND(STBY)
1.2
1.8
VS = 18 V
by Mode
IN = “low”
DEN = “high”
1) Not subject to production test - specified by design.
Data Sheet
19
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7
Power Stages
The high-side power stage is built using a N-channel vertical Power MOSFET with charge pump.
7.1
Output ON-State Resistance
The ON-state resistance RDS(ON) depends mainly on junction temperature TJ. Figure 15 shows the variation of
RDS(ON) across the whole TJ range. The value “2” on the y-axis corresponds to the maximum RDS(ON) measured
at TJ = 150 °C.
RDS(ON) variation over TJ
2,20
Reference value:
"2" = RDS(ON),MAX @ 150
2,00
1,80
1,60
1,40
1,20
1,00
0,80
0,60
0,40
Typical
0,20
0,00
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
Junction Temperature (°C)
Figure 15
RDS(ON) variation factor
The behavior in Reverse Polarity is described in Chapter 8.4.1.
Data Sheet
20
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7.2
Switching loads
7.2.1
Switching Resistive Loads
When switching resistive loads, the switching times and slew rates shown in Figure 16 can be considered. The
switch energy values EON and EOFF are proportional to load resistance and times tON and tOFF
.
IN
VIN(TH)
VIN(HYS)
t
VOUT
tON
90% of VS
tOFF(DELAY)
70% of VS
70% of VS
30% of VS
-(dV/dt)OFF
(dV/dt)ON
30% of VS
10% of VS
tON(DELAY)
tOFF
t
PDMOS
EON
EOFF
t
Power St age_SwitchRes.emf
Figure 16 Switching a Resistive Load
Data Sheet
21
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7.2.2
Switching Inductive Loads
When switching OFF inductive loads with high-side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device due
to overvoltage, a voltage clamp mechanism is implemented. The clamping structure limits the negative
output voltage so that VDS = VDS(CLAMP). Figure 17 shows a concept drawing of the implementation. The
clamping structure protects the device in all operation modes listed in Chapter 6.1.
VS
High-side
Channel
VS
VDS
VSIS(CLAMP)
VDS(CLAMP)
IS
IL
VOUT
VS(CLAMP)
OUT
GND
L,
RL
IL
PowerStage_Clamp_INTDIO_1CH.emf
Figure 17 Output Clamp concept
During demagnetization of inductive loads, energy has to be dissipated in BTS7008-1EPZ. The energy can be
calculated with Equation (7.1):
RL IL
ln 1 – ------------------------------------------- + IL
VS – VDS(CLAMP)
-------------------------------------------
RL
L
RL
æ
ö
------
E = VDS(CLAMP)
(7.1)
è
ø
VS – VDS(CLAMP)
The maximum energy, therefore the maximum inductance for a given current, is limited by the thermal design
of the component.
Data Sheet
22
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7.2.3
Output Voltage Limitation
To increase the current sense accuracy, VDS voltage is monitored. When the output current IL decreases while
the channel is diagnosed (DEN pin set to “high” - see Figure 18) bringing VDS equal or lower than VDS(SLC), the
output DMOS gate is partially discharged. This increases the output resistance so that VDS = VDS(SLC) even for
very small output currents. The VDS increase allows the current sensing circuitry to work more efficiently,
providing better kILIS accuracy for output current in the low range.
IN
t
DEN
tsIS(ON)
tsIS(OFF)
t
IL
t
VDS
VS
VDS(SLC)
t
PowerStage_GBR_diag.emf
Figure 18 Output Voltage Limitation activation during diagnosis
7.3
Advanced Switching Characteristics
7.3.1
Inverse Current behavior
When VOUT > VS, a current IINV flows into the power output transistor (see Figure 19). This condition is known
as “Inverse Current”.
If the channel is in OFF state, the current flows through the intrinsic body diode generating high power losses
therefore an increase of overall device temperature. If the channel is in ON state, RDS(INV) can be expected and
power dissipation in the output stage is comparable to normal operation in RDS(ON)
.
During Inverse Current condition, the channel remains in ON or OFF state as long as IINV < IL(INV)
.
With InverseON, it is possible to switch ON the channel during Inverse Current condition as long as IINV < IL(INV)
(see Figure 20).
Data Sheet
23
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
VBAT
VS
Gate
Driver
VINV = VOU T > VS
IINV
Device
Logic
INV
Comp.
OUT
GND
PowerStage_InvCurr_INTDIO.emf
Figure 19 Inverse Current Circuitry
IN
IN
CASE 1 : Switch is ON
CASE 2 : Switch is OFF
OFF
ON
t
t
t
IL
IL
NORMAL
NORMAL
NORMAL
NORMAL
t
INVERSE
OFF
INVERSE
ON
DMOS state
DMOS state
t
t
CASE 3 : Switch ON into Inverse Current
CASE 4 : Switch OFF into Inverse Current
IN
IN
OFF
ON
OFF
ON
t
t
IL
IL
NORMAL
NORMAL
NORMAL
NORMAL
t
t
t
t
INVERSE
INVERSE
DMOS state
DMOS state
ON
OFF
OFF
ON
PowerStage_InvCurr_INVON.emf
Figure 20 InverseON - Channel behavior in case of applied Inverse Current
Note:
No protection mechanism like Overtemperature or Overload protection is active during applied
Inverse Currents.
Data Sheet
24
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7.3.2
Cross Current robustness with H-Bridge configuration
When BTS7008-1EPZ is used as high-side switch e.g. in a bridge configuration (therefore paired with a low-side
switch as shown in Figure 21), the maximum slew rate applied to the output by the low-side switch must be
lower than | dVOUT / dt |.
VBAT
R/L cable
HSS1
HSS 2
VS
VS
T
T
IN
OFF
ON(DC) IN
OUT
OUT
| dVOUT /dt |
Cross
Current
Current through Motor
M
ON( PWM)
OFF
PowerStag_e PassiveSlew_ PROFET1Ch.emf
Figure 21 High-Side switch used in Bridge configuration
Data Sheet
25
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
7.4
Electrical Characteristics Power Stages
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
Table 11 Electrical Characteristics: Power Stages - General
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Voltages
Drain to Source Clamping VDS(CLAMP)_-40 33
Voltage at TJ = -40 °C
36.5
38
42
V
V
IL = 5 mA
P_7.4.0.1
P_7.4.0.2
TJ = -40°C
See Figure 17
1)
Drain to Source Clamping VDS(CLAMP)_25 35
Voltage at TJ ≥ 25 °C
44
IL = 5 mA
TJ ≥ 25°C
See Figure 17
1) Tested at TJ = 150°C.
7.4.1
Electrical Characteristics Power Stages - PROFET™
Table 12 Electrical Characteristics: Power Stages - PROFET™
Parameter
Symbol
Values
Typ.
Unit Note or
Number
Test Condition
Min.
Max.
Timings
Switch-ON Delay
tON(DELAY)
tOFF(DELAY)
tON
10
35
25
60
50
20
60
μs
μs
μs
μs
μs
VS = 13.5 V
P_7.4.1.1
P_7.4.1.2
P_7.4.1.3
P_7.4.1.4
P_7.4.1.5
VOUT = 10% VS
See Figure 16
Switch-OFF Delay
Switch-ON Time
Switch-OFF Time
10
30
15
-20
50
VS = 13.5 V
VOUT = 90% VS
See Figure 16
110
100
60
VS = 13.5 V
VOUT = 90% VS
See Figure 16
tOFF
VS = 13.5 V
VOUT = 10% VS
See Figure 16
Switch-ON/OFF Matching
ΔtSW
VS = 13.5 V
tON - tOFF
Data Sheet
26
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
Table 12 Electrical Characteristics: Power Stages - PROFET™ (continued)
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Voltage Slope
Switch-ON Slew Rate
(dV/dt)ON
0.3
0.6
0.9
V/μs VS = 13.5 V
P_7.4.1.6
VOUT = 30% to 70%
of VS
See Figure 16
Switch-OFF Slew Rate
-(dV/dt)OFF 0.3
0.6
0.9
V/μs VS = 13.5 V
P_7.4.1.7
VOUT = 70% to 30%
of VS
See Figure 16
Slew Rate Matching
(dV/dt)ON - (dV/dt)OFF
Δ(dV/dt)SW -0.15
0
7
0.15
18
V/μs VS = 13.5 V
P_7.4.1.8
P_7.4.1.9
Voltages
1)
Output Voltage Drop
Limitation at Small Load
Currents
VDS(SLC)
2
mV
DEN = “high”
IL = IL(OL) = 20 mA
See Figure 18
1) Not subject to production test - specified by design.
7.5
Electrical Characteristics - Power Output Stages
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
7.5.1
Power Output Stage - 8 mΩ
Table 13 Electrical Characteristics: Power Stages - 8 mΩ
Parameter
Symbol
Values
Typ.
Unit Note or
Test Condition
Number
Min.
Max.
Output characteristics
1)
ON-State Resistance at
TJ = 25 °C
RDS(ON)_25
RDS(ON)_150
RDS(ON)_175
–
–
–
–
9
–
–
–
–
mΩ
mΩ
mΩ
mΩ
P_7.5.1.1
P_7.5.1.17
P_7.5.1.18
P_7.5.1.3
TJ = 25 °C
TJ = 150 °C
ON-State Resistance at
TJ = 150 °C
16.4
19
20
1)
ON-State Resistance at
TJ = 175 °C
TJ = 175 °C
ON-State Resistance in
Cranking
RDS(ON)_CRAN
TJ = 150 °C
VS = 3.1 V
IL = 2 A
K
Data Sheet
27
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
Table 13 Electrical Characteristics: Power Stages - 8 mΩ (continued)
Parameter
Symbol
Values
Typ.
10
Unit Note or
Test Condition
Number
Min.
Max.
1)
ON-State Resistance in
RDS(INV)_25
–
–
mΩ
P_7.5.1.4
Inverse Current at TJ = 25 °C
TJ = 25 °C
VS = 13.5 V
IL = -4 A
DEN = “low”
see Figure 19
ON-State Resistance in
Inverse Current at TJ = 150 °C
RDS(INV)_150
–
–
–
–
20
20
mΩ
mΩ
TJ = 150 °C
VS = 13.5 V
IL = -4 A
DEN = “low”
see Figure 19
1)
P_7.5.1.5
ON-State Resistance in
RDS(INV)_175
P_7.5.1.20
Inverse Current at TJ = 175 °C
TJ = 175 °C
VS = 13.5 V
IL = -4 A
DEN = “low”
see Figure 19
1)
ON-State Resistance in
Reverse Polarity at TJ = 25 °C
RDS(REV)_25
–
–
10
–
–
mΩ
mΩ
P_7.5.1.6
P_7.5.1.7
TJ = 25 °C
VS = -13.5 V
IL = -4 A
RSENSE = 1.2 kΩ
ON-State Resistance in
Reverse Polarity at
TJ = 150 °C
RDS(REV)_150
33
TJ = 150 °C
VS = -13.5 V
IL = -4 A
RSENSE = 1.2 kΩ
1)
Nominal Load Current per
Channel (all Channels
Active)
IL(NOM)
–
–
–
10
–
A
P_7.5.1.8
P_7.5.1.23
P_7.5.1.9
TA = 85 °C
TJ ≤ 150 °C
1)
Nominal Load Current per
Channel (all Channels
Active)
IL(NOM)_125
6.5
0.01
–
A
TA = 125 °C
150 °C < TJ ≤ 175 °C
1)
Output Leakage Current at IL(OFF)_85
TJ ≤ 85 °C
0.5
μA
VOUT = 0 V
IN = “low”
TA ≤ 85 °C
Output Leakage Current at IL(OFF)_150
TJ = 150 °C
–
–
2.5
15
8
μA
μA
VOUT = 0 V
IN = “low”
TA = 150 °C
1)
P_7.5.1.10
P_7.5.1.22
Output Leakage Current at IL(OFF)_175
TJ = 175 °C
50
VOUT = 0 V
IN = “low”
TA = 175 °C
Data Sheet
28
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Power Stages
Table 13 Electrical Characteristics: Power Stages - 8 mΩ (continued)
Parameter
Symbol
Values
Unit Note or
Test Condition
Number
Min. Typ. Max.
1)
Inverse Current Capability IL(INV)
–
10
–
A
P_7.5.1.11
VS < VOUT
IN = “high”
-40 °C < TJ ≤ 150 °C
see Figure 19
Voltage Slope
1)
Passive Slew Rate (e.g. for |dVOUT / dt|
Half Bridge Configuration)
–
–
–
10
V/μs
P_7.5.1.12
P_7.5.1.13
VS = 13.5 V
see Figure 21
Voltages
Drain Source Diode Voltage |VDS(DIODE)
|
550
700
mV
IL = -190 mA
TJ = 150 °C
Switching Energy
1)
Switch-ON Energy
EON
–
–
0.40
0.51
–
–
mJ
mJ
P_7.5.1.14
P_7.5.1.15
VS = 18 V
see Figure 16
1)
Switch-OFF Energy
EOFF
VS = 18 V
see Figure 16
1) Not subject to production test - specified by design.
Data Sheet
29
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
8
Protection
The BTS7008-1EPZ is protected against Overtemperature, Overload, Reverse Battery (with ReverseON) and
Overvoltage. Overtemperature and Overload protections are working when the device is not in Sleep mode.
Overvoltage protection works in all operation modes. Reverse Battery protection works when the GND and VS
pins are reverse supplied.
8.1
Overtemperature Protection
The device incorporates both an absolute (TJ(ABS)) and a dynamic (TJ(DYN)) temperature protection circuitry for
the channel. An increase of junction temperature TJ above either one of the two thresholds (TJ(ABS) or TJ(DYN)
)
switches OFF the overheated channel to prevent destruction. The channel remains switched OFF until
junction temperature has reached the “Restart” condition described in Table 14. The behavior is shown in
Figure 22 (absolute Overtemperature Protection) and Figure 23 (dynamic Overtemperature Protection).
TJ(REF) is the reference temperature used for dynamic temperature protection.
IN
t
t
DEN
IL
IL(OVL)
t
TJ
TJ(ABS)
t
tIS(FAUL T)_D
IIS
IIS(SA T)
IIS(FAUL T)
IL / kILIS
t
t
In ter nal
count er
0
1
Protection_PROFET_OT_IRC.emf
Figure 22 Overtemperature Protection (Absolute)
Data Sheet
30
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
IN
t
t
DEN
IL
IL(OVL)
t
TJ
TJ(ABS)
TJ(REF)
t
tIS(FAUL T)_D
IIS
IIS(FAUL T)
IL / kILIS
t
t
In ter nal
counter
0
1
2
Protection_PROFET_dT_IRC.emf
Figure 23 Overtemperature Protection (Dynamic)
When the Overtemperature protection circuitry allows the channel to be switched ON again, the retry strategy
described in Chapter 8.3 is followed.
Data Sheet
31
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
8.2
Overload Protection
The BTS7008-1EPZ is protected in case of Overload or short circuit to ground. Two Overload thresholds are
defined (see Figure 24) and selected automatically depending on the voltage VDS across the power DMOS:
•
•
IL(OVL0) when VDS < 13 V
IL(OVL1) when VDS > 22 V
IL(OVL0)
IL(OVL1)
Figure 24 Overload Current Thresholds variation with VDS
In order to allow a higher load inrush at low ambient temperature, Overload threshold is maximum at low
temperature and decreases when TJ increases (see Figure 25). IL(OVL0) typical value remains approximately
constant up to a junction temperature of +75 °C.
Data Sheet
32
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
IL(OVL0) variation over TJ
1,3
1,2
1,1
1,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
reference value
"1" = IL(OVL0) typ @ -40 °C
Typ
0,0
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction Temperature (°C)
Figure 25 Overload Current Thresholds variation with TJ
Power supply voltage VS can increase above 18 V for short time, for instance in Load Dump or in Jump Start
condition. Whenever VS ≥ VS(JS), the overload detection current is set to IL(OVL_JS) as shown in Figure 26.
IL(OVL)
IL(OVL0)
IL(OVL_JS)
VS
VS(JS),min VS(JS),max
Protection_JS.emf
Figure 26 Overload Detection Current variation with VS voltage
When IL ≥ IL(OVL) (either IL(OVL0), IL(OVL1) or IL(OVL_JS)), the channel is switched OFF. The channel is allowed to restart
according to the retry strategy described in Chapter 8.3.
Data Sheet
33
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
8.3
Protection and Diagnosis in case of Fault
Any event that triggers a protection mechanism (either Overtemperature or Overload) has 2 consequences:
•
•
The channel switches OFF and the internal counter is incremented
If the diagnosis is active for the channel, a current IIS(FAULT) is provided by IS pin (see Chapter 9.2.2 for
further details)
The channel can be switched ON again if all the protection mechanisms fulfill the “restart” conditions
described in Table 14. Furthermore, the device has an internal retry counter to maximize the robustness in
case of fault.
Table 14 Protection “Restart” Condition
Fault condition
Switch OFF event
“Restart” Condition
Overtemperature
TJ ≥ TJ(ABS) or (TJ - TJ(REF)) ≥ TJ(DYN)
TJ < TJ(ABS) and (TJ - TJ(REF)) < TJ(DYN)
(including hysteresis)
Overload
IL ≥ IL(OVL)
IL < 50 mA
TJ within TJ(ABS) and TJ(DYN) ranges
(including hysteresis)
8.3.1
Retry Strategy
When IN is set to “high”, the channel is switched ON. In case of fault condition the output stage is switched
OFF. The channel can be allowed to restart only if the “restart” conditions for the protection mechanisms are
fulfilled (see Table 14).
The channel is allowed to switch ON for nRETRY(CR) times before switching OFF. After a time tRETRY, if the input pin
is set to “high”, the channel switches ON again for nRETRY(NT) times before switching OFF again (“retry” cycle).
After nRETRY(CYC) consecutive “retry” cycles, the channel latches OFF. It is necessary to set the input pin to “low”
for a time longer than tDELAY(CR) to de-latch the channel (“counter reset delay” time) and to reset the internal
counter to the default value.
During the “counter reset delay” time, if the input is set to “high” the channel remains switched OFF and the
timer counting tDELAY(CR) is reset, starting to count again as soon as the input pin is set to “low” again. If the
input pin remains “low” for a time longer than tDELAY(CR) the internal retry counter is reset to the default value,
allowing nRETRY(CR) retries at the next channel activation.
The retry strategy is shown in Figure 29 (flowchart), Figure 27 (timing diagram - input pin always “high”) and
Figure 28 (timing diagram - channel controlled in PWM).
Data Sheet
34
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
IN
t
t
Short circu it
to ground
nRETRY(CYC)
"retry" cycle
nRETRY(CR)
nRETRY(NT)
nRETRY(NT)
IL
t
tRETRY
tRETRY
tDELA Y(CR)
In ter nal
0
1
nRETRY(CR)
nRETRY(CR) + nRETRY(NT)
nRETRY(CR) + (nRETRY(CYC) * nRETRY(NT)
)
0
counter
t
DEN
IIS(FAUL T)
t
IL / kILIS
IL / kILIS
IIS
t
Protection_PROFET_time_noPWM.emf
Figure 27 Retry Strategy Timing Diagram
IN
t
t
Short circu it
to ground
nRETRY(CYC)
"retry" cycle
nRETRY(CR)
nRETRY(NT)
nRETRY(NT)
IL
t
tRETRY
tRETRY
tDELA Y(CR)
In ter nal
counter
0
1
nRETRY(CR)
nRETRY(CR) + nRETRY(NT)
nRETRY(CR) + (nRETRY(CYC) * nRETRY(NT)
)
0
t
Protection_PROFET_Timings.emf
Figure 28 Retry Strategy Timing Diagram - Channel operated in PWM
Data Sheet
35
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
START
Channel remains OFF
no
IN is "high"
yes
yes
"Retry" cycles =
nRETRY(CYC)
no
no
ALL "Restart"
conditions fulfilled
Switch channel OFF
no
yes
Switch channel ON
IN is "high"
yes
Channel remains ON
no
Fault
(Overtemperature or
Overload)
yes
Switch channel OFF
Counter++
"Retry" cycles++
Wait for tRETRY
Counter < nRETRY(CR)
yes
no
"Retry" cycles =
nRETRY(CYC)
no
yes
Wait until IN is "low" then
start counting for tDELAY(CR)
no
IN is "low"
yes
Continue counting for
tDELAY(CR)
tDELAY(CR) elapsed
no
yes
Counter = 0
"Retry" cycles = 0
Protection_PRO FET _Flow.emf
Figure 29 Retry Strategy Flowchart
Data Sheet
36
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
It is possible to “force” a reset of the internal counter without waiting for tDELAY(CR) by applying a pulse (rising
edge followed by a falling edge) to the DEN pin while IN pin is “low”. The pulse applied to DEN pin must have
a duration longer than tDEN(CR) to ensure a reset of the internal counter.
The timings are shown in Figure 30.
IN
t
Short circu it
to ground
t
nRETRY(CR)
nRETRY(CR)
IL
t
In ter nal
counter
0
1
nRETRY(CR)
0
1
nRETRY(CR)
0
t
t
DEN
tDEN(CR)
tDEN(CR)
tDEN(CR)
Protection_PROFET_DENforce_time2.emf
Figure 30 Retry Strategy Timing Diagram with Forced Reset
8.4
Additional protections
8.4.1
Reverse Polarity Protection
In Reverse Polarity condition (also known as Reverse Battery), the output stage is switched ON (see parameter
RDS(REV)) because of ReverseON feature which limits the power dissipation in the output stage. Each ESD diode
of the logic contributes to total power dissipation. The reverse current through the output stage must be
limited by the connected load. The current through Digital Input pins has to be limited as well by an external
resistor (please refer to the Absolute Maximum Ratings listed in Chapter 4.1 and to Application Information in
Chapter 10).
Figure 31 shows a typical application including a device with ReverseON. A current flowing into GND pin (-IGND
)
during Reverse Polarity condition is necessary to activate ReverseON, therefore a resistive path between
module ground and device GND pin must be present.
Data Sheet
37
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
-VBA T(REV)
High-side
Channel
VS
IDI
Microcontroller
DO
DI
RDI
ReverseON
OUT
-IL
GND
IS
GND
L, C, R
-IIS
-IGND
Protection_RevBatt_HEAT.emf
Figure 31 Reverse Battery Protection (application example)
8.4.2
Overvoltage Protection
In the case of supply voltages between VS(EXT,UP) and VBAT(LD), the output transistor is still operational and
follows the input pin. In addition to the output clamp for inductive loads as described in Chapter 7.2.2, there
is a clamp mechanism available for Overvoltage protection for the logic and the output channel, monitoring
the voltage between VS and GND pins (VS(CLAMP)).
8.5
Protection against loss of connection
8.5.1
Loss of Battery and Loss of Load
The loss of connection to battery or to the load has no influence on device robustness when load and wire
harness are purely resistive. In case of driving an inductive load, the energy stored in the inductance must be
handled. PROFET™ +2 12V devices can handle the inductivity of the wire harness up to 10 µH with IL(NOM). In
case of applications where currents and/or the aforementioned inductivity are exceeded, an external
suppressor diode (like diode DZ2 shown in Chapter 10) is recommended to handle the energy and to provide
a well-defined path to the load current.
8.5.2
Loss of Ground
In case of loss of device ground, it is recommended to have a resistor connected between any Digital Input pin
and the microcontroller to ensure a channel switch OFF (as described in Chapter 10).
Note:
In case any Digital Input pin is pulled to ground (either by a resistor or active) a parasitic ground
path is available, which could keep the device operational during loss of device ground.
Data Sheet
38
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
8.6
Electrical Characteristics Protection
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
Table 15 Electrical Characteristics: Protection - General
Parameter
Symbol
Values
Typ.
190
Unit Note or
Test Condition
Number
Min.
Max.
1)2)
Thermal Shutdown
Temperature (Absolute)
TJ(ABS)
175
205
°C
P_8.6.0.10
P_8.6.0.2
P_8.6.0.3
P_8.6.0.6
See Figure 22
3)
Thermal Shutdown
Hysteresis (Absolute)
THYS(ABS)
TJ(DYN)
–
–
30
–
K
See Figure 22
3)
Thermal Shutdown
Temperature (Dynamic)
80
–
K
See Figure 23
Power Supply Clamping
Voltage at TJ = -40 °C
VS(CLAMP)_-40 33
36.5
42
V
IVS = 5 mA
TJ = -40 °C
See Figure 17
2)
Power Supply Clamping
Voltage at TJ ≥ 25 °C
VS(CLAMP)_25 35
38
44
V
V
P_8.6.0.7
P_8.6.0.8
IVS = 5 mA
TJ ≥ 25 °C
See Figure 17
3)
Power Supply Voltage
Threshold for Overcurrent
Threshold Reduction in case
of Short Circuit
VS(JS)
20.5
22.5
24.5
Setup acc. to AEC-
Q100-012
1) Functional test only.
2) Tested at TJ = 150°C only.
3) Not subject to production test - specified by design.
8.6.1
Electrical Characteristics Protection - PROFET™
Table 16 Electrical Characteristics: Protection - PROFET™
Parameter
Symbol
Values
Typ.
5
Unit Note or
Number
Test Condition
Min.
Max.
1)
Automatic Retries in Case of nRETRY(CR)
–
–
P_8.6.1.1
Fault after a Counter Reset
See Figure 27 and
Figure 28
1)
Automatic Retries in Case of nRETRY(NT)
Fault after the First tRETRY
Activation
–
–
1
2
–
–
P_8.6.1.3
P_8.6.1.4
See Figure 27 and
Figure 28
1)
Maximum “Retry” Cycles
allowed before Channel
Latch OFF
nRETRY(CYC)
See Figure 27 and
Figure 28
Data Sheet
39
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
Table 16 Electrical Characteristics: Protection - PROFET™ (continued)
Parameter
Symbol
Values
Typ.
70
Unit Note or
Test Condition
Number
Min.
Max.
1)
Auto Retry Time after Fault tRETRY
Condition
40
100
ms
ms
µs
P_8.6.1.5
See Figure 27 and
Figure 28
1)
Counter Reset Delay Time
after Fault Condition
tDELAY(CR)
40
50
70
100
150
P_8.6.1.6
P_8.6.1.7
See Figure 27 and
Figure 28
2)
Minimum DEN Pulse
tDEN(CR)
100
Duration for Counter Reset
See Figure 30
1) Functional test only.
2) Not subject to production test - specified by design.
8.7
Electrical Characteristics Protection - Power Output Stages
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
8.7.1
Protection Power Output Stage - 8 mΩ
Table 17 Electrical Characteristics: Protection - 8 mΩ
Parameter
Symbol
Values
Typ.
88
Unit Note or
Test Condition
Number
Min.
Max.
1)
Overload Detection Current IL(OVL0)_-40
at TJ = -40 °C
77
99
A
A
A
P_8.7.1.1
TJ = -40 °C
dI/dt = 0.4 A/µs
see Figure 24 and
Figure 25
2)
Overload Detection Current IL(OVL0)_25
at TJ = 25 °C
77
65
88
75
99
85
P_8.7.1.7
P_8.7.1.8
TJ = 25 °C
dI/dt = 0.4 A/µs
see Figure 24 and
Figure 25
2)
Overload Detection Current IL(OVL0)_150
at TJ = 150 °C
TJ = 150 °C
dI/dt = 0.4 A/µs
see Figure 24 and
Figure 25
Data Sheet
40
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Protection
Table 17 Electrical Characteristics: Protection - 8 mΩ (continued)
Parameter
Symbol
Values
Typ.
70
Unit Note or
Test Condition
Number
Min.
Max.
2)
Overload Detection Current IL(OVL0)_175
at TJ = 175 °C
60
78
A
P_8.7.1.2
TJ = 175 °C
dI/dt = 0.4 A/µs
see Figure 24 and
Figure 25
2)
Overload Detection Current IL(OVL1)
at High VDS
–
–
54
54
–
–
A
A
P_8.7.1.5
P_8.7.1.6
dI/dt = 0.4 A/µs
see Figure 24
2)
Overload Detection Current IL(OVL_JS)
Jump Start Condition
VS > VS(JS)
dI/dt = 0.4 A/µs
see Figure 26
1) Functional test only.
2) Not subject to production test - specified by design.
Data Sheet
41
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9
Diagnosis
For diagnosis purpose, the BTS7008-1EPZ provides a combination of digital and analog signals at pin IS. These
signals are generically named SENSE and written IIS. In case of disabled diagnostic (DEN pin set to “low”), IS
pin becomes high impedance.
A sense resistor RSENSE must be connected between IS pin and module ground if the current sense diagnosis is
used. RSENSE value has to be higher than 820 Ω (or 400 Ω when a central Reverse Battery protection is present
on the battery feed) to limit the power losses in the sense circuitry. A typical value is RSENSE = 1.2 kΩ.
Due to the internal connection between IS pin and VS supply voltage, it is not recommended to connect the IS
pin to the sense current output of other devices, if they are supplied by a different battery feed.
See Figure 32 for details as an overview.
VS
Output Channel
T
Overtemperature
IS Pin Control
Internal Counter
Logic
OUT
IN
DEN
IL / kILIS
VDS(OLOFF)
+
IIS(FAULT)
IIS(OLOFF)
MUX
IS
RSENSE
Diag nosis_PROFET_1CH.emf
Figure 32 Diagnosis Block Diagram
Data Sheet
42
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.1
Overview
Table 18 gives a quick reference to the state of the IS pin during BTS7008-1EPZ operation.
Table 18 SENSE Signal, Function of Application Condition
Application Condition
Input level DEN level VOUT
Diagnostic Output
Normal operation
“low”
“high”
~ GND
Z
IIS(FAULT) if counter > 0
Short circuit to GND
~ GND
Z
IIS(FAULT) if counter > 0
Overtemperature
Z
IIS(FAULT)
Short circuit to VS
VS
IIS(OLOFF)
(IIS(FAULT) if counter > 0)
Open Load
< VS - VDS(OLOFF)
> VS - VDS(OLOFF)
Z
1)
IIS(OLOFF)
(in both cases IIS(FAULT) if
counter > 0)
Inverse current
~ VINV = VOUT > VS IIS(OLOFF)
(IIS(FAULT) if counter > 0)
Normal operation
Overcurrent
“high”
~ VS
< VS
~ GND
Z
IIS = IL / kILIS
IIS(FAULT)
Short circuit to GND
Overtemperature
Short circuit to VS
Open Load
IIS(FAULT)
IIS(FAULT)
VS
IIS < IL / kILIS
IIS = IIS(EN)
2)
~ VS
3)
Under load (e.g. Output Voltage
Limitation condition)
~ VS
IIS(EN) < IIS < IL(NOM) / kILIS
Inverse current
~ VINV = VOUT > VS IIS = IIS(EN)
n.a.
All conditions
n.a.
“low”
Z
1) With additional pull-up resistor.
2) The output current has to be smaller than IL(OL)
3) The output current has to be higher than IL(OL)
.
.
9.2
Diagnosis in ON state
A current proportional to the load current (ratio kILIS = IL / IIS) is provided at pin IS when the following conditions
are fulfilled:
•
•
•
The power output stage is switched ON with VDS < VDS(OLOFF)
The diagnosis is enabled
No fault (as described in Chapter 8.3) is present or was present and not cleared yet (see Chapter 9.2.2 for
further details)
If a “hard” failure mode is present or was present and not cleared yet a current IIS(FAULT) is provided at IS pin.
Data Sheet
43
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.2.1
Current Sense (kILIS)
The accuracy of the sense current depends on temperature and load current. IIS increases linearly with IL
output current until it reaches the saturation current IIS(SAT). In case of Open Load at the output stage (IL close
to 0 A), the maximum sense current IIS(EN) (no load, diagnosis enabled) is specified. This condition is shown in
Figure 34. The blue line represents the ideal kILIS line, while the red lines show the behavior of a typical
product.
An external RC filter between IS pin and microcontroller ADC input pin is recommended to reduce signal ripple
and oscillations (a minimum time constant of 1 µs for the RC filter is recommended).
The kILIS factor is specified with limits that take into account effects due to temperature, supply voltage and
manufacturing process. Tighter limits are possible (within a defined current window) with calibration:
•
•
•
A well-defined and precise current (IL(CAL)) is applied at the output during End of Line test at customer side
The corresponding current at IS pin is measured and the kILIS is calculated (kILIS @ IL(CAL)
)
Within the current range going from IL(CAL)_L to IL(CAL)_H the kILIS is equal to kILIS @ IL(CAL) with limits defined by
ΔkILIS
The derating of kILIS after calibration is calculated using the formulas in Figure 33 and it is specified by ΔkILIS
Diagnosis_dKILIS.emf
Figure 33 ΔkILIS calculation formulas
The calibration is intended to be performed at TA(CAL) = 25°C. The parameter ΔkILIS includes the drift
overtemperature as well as the drift over the current range from IL(CAL)_L to IL(CAL)_H
.
IIS
IIS(OL)
IIS(EN)
IL
IL(OL)
Diagnosis_ OLON _adv .emf
Figure 34 Current Sense Ratio in Open Load at ON condition
Data Sheet
44
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.2.2
Fault Current (IIS(FAULT))
As soon a protection event occurs, changing the value of the internal retry counter (see Chapter 8.3 for more
details) from its reset state, a current IIS(FAULT) is provided by pin IS when DEN is set to “high”. The following 3
situations may occur:
•
If the channel is ON and the number of retries is lower than “nRETRY(CR) + nRETRY(CYC) * nRETRY(NT)”, the current
IS(FAULT) is provided for a time tIS(FAULT)_D after the channel is allowed to restart, after which IIS = IL / kILIS (as
I
shown in Figure 35). During a retry cycle (while timer tRETRY is running) the current IIS(FAULT) is provided each
time the channel diagnosis is checked
•
•
If the channel is ON and the number of retries is equal than “nRETRY(CR) + nRETRY(CYC) * nRETRY(NT)”, the current
IIS(FAULT) is provided until the internal counter is reset (either by expiring of tDELAY(CR) time or by DEN pin
pulse, as described in Chapter 8.3.1)
If the channel is OFF and the internal counter is not in the reset state, the current IIS(FAULT) is provided each
time the channel diagnosis is checked
IN
t
t
IL
IL(OVL)
In ter nal
counter
0
1
2
0
t
DEN
tIS(FAUL T)_D
IIS(FAUL T)
t
IIS(FAUL T)
IIS
IL / kILIS
t
Diagnosis_PROFET_IISFAULT_load.emf
Figure 35 IIS(FAULT) at Load Switching
Figure 36 adds the behavior of SENSE signal to the timing diagram seen in Figure 28, while Figure 37 shows
the relation between IIS = IL / kILIS, IIS(SAT) and IIS(FAULT)
.
Data Sheet
45
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
IN
t
t
Short circu it
to ground
nRETRY(CYC)
"retry" cycle
nRETRY(CR)
nRETRY(NT)
nRETRY(NT)
IL
t
tRETRY
tRETRY
tDELA Y(CR)
In ter nal
counter
0
1
nRETRY(CR)
nRETRY(CR) + nRETRY(NT)
nRETRY(CR) + (nRETRY(CYC) * nRETRY(NT)
)
0
t
DEN
t
IIS(FAUL T)
IIS(FAUL T)
IIS(FAUL T)
IL / kILIS
IIS
t
Diagnosis_PROFET_IISFAULT.emf
Figure 36 SENSE behavior in Fault condition
IIS
IIS(SA T),max
IIS(SAT)
IIS(FAUL T),max
IIS(FAUL T)
IIS(SA T),min
=
IIS(FAUL T),min
IL / kILIS
IL(OVL)
IL
Diagnosis_PROFET_IISFAULT_IISSAT.emf
Figure 37 SENSE behavior - overview
9.3
Diagnosis in OFF state
When a power output stage is in OFF state, the BTS7008-1EPZ can measure the output voltage and compare
it with a threshold voltage. In this way, using some additional external components (a pull-down resistor and
a switchable pull-up current source), it is possible to detect if the load is missing or if there is a short circuit to
battery. If a Fault condition was detected by the device (the internal counter has a value different from the
reset value, as described in Chapter 9.2.2) a current IIS(FAULT) is provided by IS pin each time the channel
diagnosis is checked also in OFF state.
Data Sheet
46
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.3.1
Open Load current (IIS(OLOFF))
In OFF state, when DEN pin is set to “high”, the VDS voltage is compared with a threshold voltage VDS(OLOFF). If
the load is properly connected and there is no short circuit to battery, VDS ~ VS therefore VDS > VDS(OLOFF). When
the diagnosis is active and VDS ≤ VDS(OLOFF), a current IIS(OLOFF) is provided by IS pin. Figure 38 shows the
relationship between IIS(OLOFF) and IIS(FAULT) as functions of VDS. The two currents do not overlap making it always
possible to differentiate between Open Load in OFF and Fault condition.
IIS
IIS(FAULT)
IIS(OLOFF)
VDS(OLOFF)
VDS
Figure 38 IIS in OFF State
It is necessary to wait a time tIS(OLOFF)_D between the falling edge of the input pin and the sensing at pin IS for
Open Load in OFF diagnosis to allow the internal comparator to settle. In Figure 39 the timings for an Open
Load detection are shown - the load is always disconnected.
IN
t
DEN
tIS(OLOFF)_D
t
VOUT
VDS(OLOFF)
~ VS
Load
conn ect ed
t
t
IIS
IIS(OLOFF)
IIS(OL)
Diagnosis_PROFET_OLOFF_time.emf
Figure 39 Open Load in OFF Timings - load disconnected
Data Sheet
47
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.4
SENSE Timings
Figure 40 shows the timing during settling tsIS(ON) and disabling tsIS(OFF) of the SENSE (including the case of load
change). As a proper signal cannot be established before the load current is stable (therefore before tON),
tsIS(DIAG) = tsIS(ON) + tON
.
IN
OFF
OFF
ON
t
t
DEN
tO FF
IL
t
t
tsIS(LC)
tsIS(O FF)
tsIS(ON)
tsIS(O FF)
tsIS(DI AG)
IIS
Diagnose_PROFET_SENSE_timings.emf
Figure 40 SENSE Settling / Disabling Timing
IN
OFF
OFF
ON
t
DEN
IL
t
t
tsIS(ON)_SLC
tsIS(ON)
tsIS(LC)_SLC
IIS
t
Diagnose_PROFET_SENSE_timings_SLC.emf
Figure 41 SENSE Timing with Small Load Current
Data Sheet
48
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.5
Electrical Characteristics Diagnosis
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
Table 19 Electrical Characteristics: Diagnosis - General
Parameter
Symbol
Values
Typ.
–
Unit Note or
Test Condition
Number
Min.
Max.
1)
SENSE Saturation Current
IIS(SAT)
4.4
15
mA
mA
µA
P_9.6.0.13
VS = 8 V to 18 V
R
See Figure 37
1)
SENSE = 1.2 kΩ
SENSE Saturation Current
IIS(SAT)
4.1
–
–
15
0.5
3
P_9.6.0.14
P_9.6.0.2
P_9.6.0.18
VS = 6 V to 18 V
R
See Figure 37
SENSE = 1.2 kΩ
SENSE Leakage Current
when Disabled
IIS(OFF)
0.01
0.08
DEN = “low”
IL ≥ IL(NOM)
VIS = 0 V
-40 °C < TJ ≤ 150 °C
1)
SENSE Leakage Current
when Disabled
IIS(OFF)_175
–
µA
DEN = “low”
IL ≥ IL(NOM)
VIS = 0 V
150 °C < TJ ≤ 175 °C
1)
SENSE Leakage Current
IIS(EN)_85
–
0.2
1
µA
P_9.6.0.3
when Enabled at TJ ≤ 85 °C
TJ ≤ 85 °C
DEN = “high”
IL = 0 A
See Figure 34
SENSE Leakage Current
when Enabled at TJ = 150 °C
IIS(EN)_150
–
–
0.2
0.2
1
1
µA
µA
TJ = 150 °C
DEN = “high”
IL = 0 A
See Figure 34
1)
P_9.6.0.4
SENSE Leakage Current
IIS(EN)_175
P_9.6.0.19
when Enabled at TJ = 175 °C
TJ = 175 °C
DEN = “high”
IL = 0 A
See Figure 34
1)
Saturation Voltage in kILIS
Operation
VSIS_k
–
0.5
1
V
P_9.6.0.6
VS = 6 V
(VS - VIS)
IN = DEN = “high”
IL ≤ 1.2 * IL(NOM)
Data Sheet
49
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
Table 19 Electrical Characteristics: Diagnosis - General (continued)
Parameter
Symbol
Values
Typ.
0.5
Unit Note or
Test Condition
Number
Min.
Max.
1)
Saturation Voltage in Open VSIS_OL
Load at OFF Diagnosis
(VS - VIS)
–
1
V
V
P_9.6.0.7
VS = 6 V
IN = “low”
DEN = “high”
1)
Saturation Voltage in Fault VSIS_F
Diagnosis
(VS - VIS)
–
–
0.5
0.6
1
P_9.6.0.8
VS = 6 V
IN = “low”
DEN = “high”
counter >0
-40 °C < TJ ≤ 150 °C
1)
Saturation Voltage in Fault VSIS_F_175
1.2
V
P_9.6.0.20
Diagnosis
VS = 6 V
(VS - VIS)
IN = “low”
DEN = “high”
counter > 0
150 °C < TJ ≤ 175 °C
Power Supply to IS Pin
Clamping Voltage at
TJ = -40 °C
VSIS(CLAMP)_- 33
36.5
38
42
44
V
V
IIS = 1 mA
TJ = -40 °C
See Figure 17
2)
P_9.6.0.9
40
Power Supply to IS Pin
Clamping Voltage at
TJ ≥ 25 °C
VSIS(CLAMP)_25 35
P_9.6.0.10
IIS = 1 mA
TJ ≥ 25 °C
See Figure 17
1) Not subject to production test - specified by design.
2) Tested at TJ = 150°C.
9.5.1
Electrical Characteristics Diagnosis - PROFET™
Table 20 Electrical Characteristics: Diagnosis - PROFET™
Parameter
Symbol
Values
Typ.
5.5
Unit Note or
Test Condition
Number
Min.
Max.
SENSE Fault Current
IIS(FAULT)
IIS(OLOFF)
tIS(FAULT)_D
4.4
10
mA
mA
µs
See Figure 37 and P_9.6.1.1
Figure 38
SENSE Open Load in OFF
Current
1.9
–
2.5
3.5
–
See Figure 37 and P_9.6.1.2
Figure 38
1)
SENSE Delay Time at
Channel Switch ON after
Last Fault Condition
500
P_9.6.1.3
See Figure 35
Data Sheet
50
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
Table 20 Electrical Characteristics: Diagnosis - PROFET™ (continued)
Parameter
Symbol
Values
Typ.
70
Unit Note or
Test Condition
Number
Min.
tIS(OLOFF)_D 30
Max.
SENSE Open Load in OFF
Delay Time
120
µs
VDS < VOL(OFF)
from IN falling
edge to IIS =
P_9.6.1.4
IS(OLOFF),MIN * 0.9
DEN = “high”
counter = 0
See Figure 39
Open Load VDS Detection
Threshold in OFF State
VDS(OLOFF)
tsIS(ON)
1.3
–
1.8
5
2.3
20
V
See Figure 38
P_9.6.1.5
P_9.6.1.6
SENSE Settling Time with
Nominal Load Current
Stable
µs
IL = IL(CAL)
from DEN rising
edge to IIS = IL /
(kILIS,MAX @ IL) * 0.9
See Figure 40
1)
SENSE Settling Time with
Small Load Current Stable
tsIS(ON)_SLC
–
–
60
µs
P_9.6.1.13
IL = IL(CAL)_OL
from DEN rising
edge to IIS = IL /
(kILIS,MAX @ IL) * 0.9
1)
SENSE Disable Time
tsIS(OFF)
–
–
5
5
20
20
µs
µs
P_9.6.1.8
P_9.6.1.9
From DEN falling
edge to IIS = IIS(OFF)
See Figure 40
1)
SENSE Settling Time after
Load Change
tsIS(LC)
from IL = IL(CAL)_L to
IL = IL(CAL) (see
ΔkILIS(NOM)
)
See Figure 40
1)
SENSE Settling Time after
Load Change with Small
Load Current
tsIS(LC)_SLC
–
250
400
µs
P_9.6.1.14
DEN = “high”
from Load Change
toIIS = IL /(kILIS @ IL)
from IL(CAL) to
IL(CAL)_OL
1) Not subject to production test - specified by design.
Data Sheet
51
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Diagnosis
9.6
Electrical Characteristics Diagnosis - Power Output Stages
VS = 6 V to 18 V, TJ = -40 °C to +150 °C; TJ = +150 °C to +175 °C not subject to production test - specified by design
Typical values: VS = 13.5 V, TJ = 25 °C
Typical resistive load connected to the output for testing (unless otherwise specified):
RL = 3.3 Ω
9.6.1
Diagnosis Power Output Stage - 8 mΩ
Table 21 Electrical Characteristics: Diagnosis - 8 mΩ
Parameter
Symbol
Values
Typ.
38
Unit Note or
Test Condition
Number
Min.
Max.
Open Load Output Current IL(OL)_4u
at IIS = 4 µA
13
63
mA
IIS = IIS(OL) = 4 µA
See Figure 34
P_9.7.31.1
P_9.7.31.6
P_9.7.31.9
P_9.7.31.12
P_9.7.31.15
P_9.7.31.18
P_9.7.31.20
P_9.7.31.22
P_9.7.31.27
Current Sense Ratio at
IL = IL02
kILIS02
kILIS05
kILIS08
kILIS11
kILIS14
kILIS16
kILIS18
ΔkILIS(OL)
-65% 9500
-65% 9500
-50% 9500
-30% 9500
-10% 9500
+65%
+65%
+50%
+30%
+10%
+8%
IL02 = 20 mA
IL05 = 100 mA
IL08 = 250 mA
IL11 = 1 A
Current Sense Ratio at
IL = IL05
Current Sense Ratio at
IL = IL08
Current Sense Ratio at
IL = IL11
Current Sense Ratio at
IL = IL14
IL14 = 2.8 A
Current Sense Ratio at
IL = IL16
-8%
-8%
-30
9500
9500
0
IL16 = 5.5 A
1)
Current Sense Ratio at
IL = IL18
+8%
IL18 = 10 A
1)
SENSE Current Derating
with Low Current
Calibration
+30
%
%
IL(CAL)_OL = IL05
IL(CAL)_OL_H = IL08
IL(CAL)_OL_L = IL02
TA(CAL) = 25 °C
See Figure 33
1)
SENSE Current Derating
with Nominal Current
Calibration
ΔkILIS(NOM) -4
0
+4
P_9.7.31.28
IL(CAL) = IL16
IL(CAL)_H = IL18
IL(CAL)_L = IL14
TA(CAL) = 25 °C
See Figure 33
1) Not subject to production test - specified by design.
Data Sheet
52
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Application Information
10
Application Information
Note:
10.1
The following information is given as a hint for the implementation of the device only and shall not
be regarded as a description or warranty of a certain functionality, condition or quality of the device.
Application Setup
VBAT
ZWIRE
Optional
Optional
CVSGND
CVS
RGND
T1
Logic Supply
VDD
GND
VS
GPIO
RIN
IN
OUT
GPIO
RDEN
DEN
COUT0
PROFET™ +2
12V
Microcontroller
DZ2
CVS2
ADC
VSS
RADC
RIS_PROT
IS
CSENSE
DZ1
Logic GND
Power GND
Optional
Chassis GND
*See Chapter 1 „Potential Applications“
App_1CH_INTD IO_CVG.emf
Figure 42 BTS7008-1EPZ Application Diagram
Note:
This is a very simplified example of an application circuit. The function must be verified in the real
application.
Table 22 Loads considered for Reverse Polarity setup (see P_4.1.0.5)
Output
RDS(ON),max @ TJ = 150 °C
Load connected
8 mΩ
16.4 mΩ
H9_65W
Data Sheet
53
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Application Information
10.2
External Components
Table 23 Suggested Component values
Reference
Value
Purpose
RIN
4.7 kΩ
Protection of the microcontroller during Overvoltage and Reverse Polarity
Necessary to switch OFF BTS7008-1EPZ output during Loss of Ground
RDEN
RPD
4.7 kΩ
47 kΩ
Protection of the microcontroller during Overvoltage and Reverse Polarity
Necessary to switch OFF BTS7008-1EPZ output during Loss of Ground
Output polarization (pull-down)
Ensures polarization of BTS7008-1EPZ outputs to distinguish between
Open Load and Short to VS in OFF Diagnosis
ROL
1.5 kΩ
Output polarization (pull-up)
Ensures polarization of BTS7008-1EPZ output during Open Load in OFF
diagnosis
COUT
T1
10 nF
Protection of BTS7008-1EPZ output during ESD events and BCI
Switch the battery voltage for Open Load in OFF diagnosis
Filtering of voltage spikes on the battery line
BC 807
100 nF
47 nF
CVS
CVSGND
Buffer capacitor for fast transient
See Table 5 (P_4.3.0.7) for the boundary conditions
A placeholder on PCB layout is recommended
DZ2
33 V TVS Diode Transient Voltage Suppressor diode
Protection during Overvoltage and in case of Loss of Battery while driving
an inductive load
CVS2
–
Filtering / buffer capacitor located at VBAT connector
SENSE resistor
RSENSE
RIS_PROT
1.2 kΩ
4.7 kΩ
Protection during Overvoltage, Reverse Polarity, Loss of Ground
Value to be tuned according to microcontroller specifications
DZ1
7 V Z-Diode
Protection of microcontroller during Overvoltage
RADC
4.7 kΩ
Protection of microcontroller ADC input during Overvoltage, Reverse
Polarity, Loss of Ground
Value to be tuned according to microcontroller specifications
CSENSE
RGND
220 pF
Sense signal filtering
A time constant (RADC * CSENSE) longer than 1 µs is recommended
47 Ω
Protection in case of Overvoltage and Loss of Battery while driving
inductive loads
10.3
Further Application Information
•
•
Please contact us for information regarding the Pin FMEA
For further information you may contact http://www.infineon.com/
Data Sheet
54
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Package Outlines
11
Package Outlines
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Data Sheet
55
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Package Outlines
Green product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant
with government regulations the device is available as a green product. Green products are RoHS-Compliant
(i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Further information on packages
https://www.infineon.com/packages
Data Sheet
56
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Revision History
12
Revision History
Table 24 BTS7008-1EPZ - List of changes
Revision
1.10, 2020-12-14 Typo fixed (PROFET™+2 → PROFET™ +2)
Table 2 updated (adjusted content in column “Function” for DEN)
Changes
Figure 1, Figure 21, Figure 26, Figure 38 updated
Figure 17, Figure 31 updated (typo fixed)
Chapter 8.2 updated
Chapter 8.4.1 updated (typo fixed)
P_9.6.0.6 updated (Parameter: SENSE Operative Range for kILIS Operation (VS - VIS) →
Saturation Voltage in kILIS Operation (VS - VIS))
P_9.6.0.7 updated (Parameter: SENSE Operative Range for Open Load at OFF Diagnosis (VS
- VIS) → Saturation Voltage in Open Load at OFF Diagnosis (VS - VIS))
P_9.6.0.8 updated (Parameter: SENSE Operative Range for Fault Diagnosis (VS - VIS) →
Saturation Voltage in Fault Diagnosis (VS - VIS)
P_9.6.0.20 updated (Parameter: SENSE Operative Range for Fault Diagnosis (VS - VIS) →
Saturation Voltage in Fault Diagnosis (VS - VIS))
1.00, 2019-10-15 Data Sheet available
Data Sheet
57
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Table of Contents
Table of Contents
1
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
2.1
2.2
Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
3.1
3.2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
4.1
4.2
4.2.1
4.3
4.4
4.4.1
4.4.2
General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute Maximum Ratings - General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Absolute Maximum Ratings - Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Power Stage - 8 mΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PCB Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5
Logic Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input Pin (IN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Diagnosis Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Electrical Characteristics Logic Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
5.1
5.2
5.3
6
6.1
Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Operation Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Unsupplied . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Stand-by mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Active mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Undervoltage on VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Electrical Characteristics Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Electrical Characteristics Power Supply - Product Specific . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
BTS7008-1EPZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6.1.1
6.1.2
6.1.3
6.1.4
6.1.5
6.2
6.3
6.4
6.4.1
7
7.1
7.2
Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Output ON-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Switching loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Switching Resistive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Switching Inductive Loads . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Output Voltage Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Advanced Switching Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Inverse Current behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Cross Current robustness with H-Bridge configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Electrical Characteristics Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electrical Characteristics Power Stages - PROFET™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electrical Characteristics - Power Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Power Output Stage - 8 mΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7.2.1
7.2.2
7.2.3
7.3
7.3.1
7.3.2
7.4
7.4.1
7.5
7.5.1
Data Sheet
58
Rev. 1.10
2020-12-14
BTS7008-1EPZ
PROFET™ +2 12V
Table of Contents
8
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
8.1
8.2
8.3
8.3.1
8.4
8.4.1
8.4.2
8.5
8.5.1
8.5.2
8.6
8.6.1
8.7
8.7.1
Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Overload Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Protection and Diagnosis in case of Fault . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Retry Strategy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Additional protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Protection against loss of connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Loss of Battery and Loss of Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Loss of Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Electrical Characteristics Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Electrical Characteristics Protection - PROFET™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Electrical Characteristics Protection - Power Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Protection Power Output Stage - 8 mΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
9
9.1
9.2
Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Diagnosis in ON state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Current Sense (kILIS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Fault Current (IIS(FAULT)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Diagnosis in OFF state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Open Load current (IIS(OLOFF)) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
SENSE Timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
Electrical Characteristics Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Electrical Characteristics Diagnosis - PROFET™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Electrical Characteristics Diagnosis - Power Output Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Diagnosis Power Output Stage - 8 mΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
9.2.1
9.2.2
9.3
9.3.1
9.4
9.5
9.5.1
9.6
9.6.1
10
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Application Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
External Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
10.1
10.2
10.3
11
12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Data Sheet
59
Rev. 1.10
2020-12-14
Please read the Important Notice and Warnings at the end of this document
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IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2020-12-14
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
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values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
WARNINGS
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All Rights Reserved.
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dangerous substances. For information on the types
in question please contact your nearest Infineon
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a written document signed by
Document reference
Z8F65709405
相关型号:
BTS7040-1EPZ
The device is suitable for applications with extended or/and high temperature mission profiles.
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