BTS949 [INFINEON]
Smart Lowside Power Switch; 智能低压侧电源开关
| 型号： | BTS949 |
| 厂家： | 
Infineon |
| 描述： | Smart Lowside Power Switch |
| 文件： | 总11页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HITFET BTS 949
Smart Lowside Power Switch
Features
Product Summary
Drain source voltage
On-state resistance
Current limit
• Logic Level Input
• Input Protection (ESD)
• Thermal Shutdown
• Overload protection
• Short circuit protection
60
18
V
V
DS
R
mΩ
DS(on)
9.5 A
19
I
I
D(lim)
Nominal load current
Clamping energy
A
D(ISO)
6000 mJ
E
AS
• Overvoltage protection
• Current limitation
• Maximum current adjustable with external resistor
• Current sense
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS chip on chip tech-
nology. Fully protected by embedded protected functions.
V
bb
+
LOAD
M
2
NC
Drain
3
Overvoltage
protection
Current
dv/dt
1
4
limitation
limitation
IN
CC
Over-
temperature
protection
Overload
protection
Short circuit
ESD
protection
R
CC
5
Source
HITFET
Page 1
02.12.1998
Semiconductor Group
BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
Unit
Drain source voltage
60
V
V
V
DS
Drain source voltage for short circuit protection
DS(SC)
R
= 0 Ω
15
50
CC
without R
CC
1)
Continuous input current
-0.2V ≤ V ≤ 10V
mA
I
IN
no limit
IN
V < -0.2V or V > 10V
| I | ≤ 2
IN
IN
IN
Operating temperature
Storage temperature
Power dissipation
- 40 ... +150
- 55 ... +150
240
°C
W
mJ
V
T
T
P
j
stg
tot
T = 25 °C
C
Unclamped single pulse inductive energy
= 19 A
6000
3000
E
V
AS
I
D(ISO)
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
2)
ESD
Load dump protection V
= V + V
V
LoadDump
A
S
LD
V =low or high; V =13.5 V
IN
A
td = 400 ms, R = 2 Ω, I =0,5*19A
110
92
I
D
td = 400 ms, R = 2 Ω, I = 19A
I
D
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
0.7
75
45
K/W
R
thJC
junction - ambient:
R
thJA
3)
SMD version, device on PCB:
R
thJA
1
A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2
V
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
3
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Page 2
02.12.1998
Semiconductor Group
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Drain source clamp voltage
60
-
-
73
25
V
V
DS(AZ)
T = - 40 ...+ 150°C, I = 10 mA
j
D
Off state drain current
= 32 V, T = -40...+150 °C, V = 0 V
-
1.3
-
µA
V
I
DSS
V
DS
j
IN
Input threshold voltage
I = 3,9 mA
1.7
-
2.2
V
IN(th)
D
100 µA
Input current - normal operation, I <I
:
D(lim)
IIN(1)
D
V = 10 V
IN
-
400 1000
Input current - current limitation mode, I =I
: I
D D(lim)
IN(2)
IN(3)
IN(H)
V = 10 V
IN
1500 3000 6000
Input current - after thermal shutdown, I =0 A:
I
I
D
V = 10 V
IN
Input holding current after thermal shutdown
T = 25 °C
500
300
-
-
j
T = 150 °C
j
-
-
On-state resistance
R
R
mΩ
DS(on)
DS(on)
D(ISO)
I = 19 A, V = 5 V, T = 25 °C
-
-
18
30
22
44
D
IN
j
I = 19 A, V = 5 V, T = 150 °C
D
IN
j
On-state resistance
I = 19 A, V = 10 V, T = 25 °C
-
-
14
25
18
36
D
IN
j
I = 19 A, V = 10 V, T = 150 °C
D
IN
j
Nominal load current (ISO 10483)
V = 10 V, V = 0.5 V, T = 85 °C
19
-
-
A
I
IN
DS
C
Page 3
02.12.1998
Semiconductor Group
BTS 949
Electrical Characteristics
Parameter
Symbol
Values
typ. max.
Unit
at T =25°C, unless otherwise specified
min.
j
Characteristics
Initial peak short circuit current limit
-
175
-
A
I
D(SCp)
V = 10 V, V = 12 V
IN
DS
1)
Current limit
I
D(lim)
V = 10 V, V = 12 V, t = 350 µs,
IN
DS
m
T = -40...+150 °C, without R
9.5
19
40
j
CC
V = 10 V, V = 12 V, t = 350 µs,
IN
DS
m
T = -40...+150 °C, R = 0 Ω
150
220
270
j
CC
Dynamic Characteristics
Turn-on time V to 90% I :
R = 1 Ω, V = 0 to 10 V, V = 12 V
-
-
-
-
40
70
1
100
170
3
t
µs
IN
D
on
off
L
IN
bb
Turn-off time
V to 10% I :
t
IN
D
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
ꢀG9 ꢁGW
V/µs
Slew rate on
70 to 50% V :
'6 RQ
bb
R = 1 Ω, V = 0 to 10 V, V = 12 V
L
IN
bb
G9 ꢁGW
1
3
Slew rate off
50 to 70% V :
'6 RII
bb
R = 1 Ω, V = 10 to 0 V, V = 12 V
L
IN
bb
Protection Functions
Thermal overload trip temperature
150
165
-
°C
T
E
jt
Unclamped single pulse inductive energy
mJ
AS
I = 19 A, T = 25 °C, V = 32 V
6000
1800
-
-
-
-
D
j
bb
I = 19 A, T = 150 °C, V = 32 V
D
j
bb
Inverse Diode
Inverse diode forward voltage
-
1,1
-
V
V
SD
I = 5*19A, t = 300 µS, V = 0 V
F
m
IN
1
Device switched on into existing short circuit (see diagram Determination of I
. Dependant on the
D(lim)
application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the
device is on condition
Page 4
02.12.1998
Semiconductor Group
BTS 949
Block Diagramm
Terms
Inductive and overvoltage output clamp
R
L
D
V
Z
I
3
I
IN
D
IN
1
V
V
D
bb
DS
S
HITFET
HITFET
R
CC
5
CC
S
4
V
IN
V
CC
Short circuit behaviour
The ground lead impedance of R
should be as low as possible
CC
V
IN
I
Input circuit (ESD protection)
D(SCp)
I
D(Lim)
I
D
IN
ESD-ZD
I
Source
t 2
t 0
tm
t 1
t :
0
Turn on into a short circuit
Measurementpoint for I
ESD zener diodes are not designed
t :
m
D(lim)
for DC current > 2 mA @ V >10V.
IN
t :
1
Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
Thermal shutdown caused by the second
t :
2
temperature sensor, achieved by an
integrating measurement.
Page 5
02.12.1998
Semiconductor Group
BTS 949
On-state resistance
Maximum allowable power dissipation
R
= f(T ); I =19A; V =10V
P
= f(T )
ON
j
D
IN
tot
c
BTS 949
40
260
W
mΩ
220
200
180
160
140
120
100
80
30
25
20
15
10
5
R
P
max.
typ.
60
40
20
0
0
°C
-50 -25
0
25
50
75
100
150
°C
150
0
20
40
60
80 100 120
160
T
j
On-state resistance
= f(T ); I = 19A; V =5V
Typ. input threshold voltage
R
V
= f(T ); I =3,9A; V =12V
ON
j
D
IN
IN(th)
j
D
DS
45
2.2
V
mΩ
1.8
1.6
35
30
25
20
15
10
5
1.4
max.
R
V
1.2
1.0
0.8
0.6
0.4
0.2
0.0
typ.
0
°C
-50 -25
0
25
50
75
100
150
°C
-50 -25
0
25
50
75
100
150
T
T
j
j
Page 6
02.12.1998
Semiconductor Group
BTS 949
Typ. transfer characteristics
Typ. short circuit current
I = f(V ); V =12V; T =25°C
I
= f(Tj); R =0Ω, V =12V
D
IN
DS
j
Dlim CC DS
Parameter: V
IN
250
160
A
10V
9V
A
120
100
80
60
40
20
0
8V
7V
150
I
I
6V
5V
100
50
4V
3V
0
V
°C
0
1
2
3
4
5
7
-50 -25
0
25
50
75
100
150
V
T
j
IN
Typ. output characteristic
Safe Operating Area
= f(V ); T =25°C
I = f(V ); T =25°C
I
D
DS
j
D(SC)
DS
j
Parameter: V
IN
150
300
10V
A
A
6V
100
200
150
100
50
I
5V
I
75
50
25
0
4V
VIN=3V
7
0
V
0
1
2
3
4
5
V
0
10
20
30
50
V
V
DS
DS
Page 7
02.12.1998
Semiconductor Group
BTS 949
Typ. current limit versus R
CC
Typ. current sense characteristics
V = f(I ); V =10V
CC
I
= f(R ); T =25°C
D(lim)
CC
j
D
IN
Parameter: V
IN
Parameter: R , T
CC
j
250
600
mV
A
10V
no Rcc
500
450
400
200
175
25°C
150
I
V
82 Ohm
47 Ohm
350
300
250
200
150
100
50
125
100
75
50
25
0
125°C
5V
22 Ohm
10 -2
10 -1
10 0
10 1
10 2
10 4
0
A
0
10
20
30
40
50
65
Ω
R
CC
I
D
Transient thermal impedance
= f(t )
Z
thJC
P
Parameter: D=t /T
P
10 0
K/W
D=0.5
0.2
10 -1
0.1
0.05
Z
0.02
10 -2
0.01
0.005
10 -3
0
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
10 2
s
t
P
Page 8
02.12.1998
Semiconductor Group
BTS 949
Application examples:
Current Sense Features and Status
Signals
D
IN
HITFET
V
µC
bb
CC
S
R
V
CC
CC
IN
open
load
Vcc
thermal
shutdown
Vcc
reached triptemperature
The accuray of Vcc is at each
temperature about ±10 %
Status signal of thermal shutdown by
monitoring input current
R
St
D
IN
HITFET
V
V
µC
IN
bb
CC
S
V
∆
V
IN
thermal shutdown
∆V = R *I
ST IN(3)
Page 9
02.12.1998
Semiconductor Group
BTS 949
Package and ordering code
all dimensions in mm
Ordering code: Q67060-S6703-A4
Ordering Code: Q67060-S6703-A2
Ordering Code: Q67060-S6703-A3
Page 10
02.12.1998
Semiconductor Group
BTS 949
Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
As far as patents or other rights of third parties are concerned, liability is only assumed for components,
not for applications, processes and circuits implemented within components or assemblies.
The information describes a type of component and shall not be considered as warranted characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
or the Siemens Companies and Representatives worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Siemens Office, Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Packing
Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales
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For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
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Components used in life-support devices or systems must be expressly authorized for such purpose!
1
Critical components of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
2
systems with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Page 11
02.12.1998
Semiconductor Group
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