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BUZ215 [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode FREDFET); SIPMOS大功率晶体管（N沟道增强型FREDFET ）
BUZ215
型号： BUZ215
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode FREDFET)
SIPMOS大功率晶体管（N沟道增强型FREDFET ）

晶体 晶体管
文件： 总9页 (文件大小：122K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BUZ 215  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• FREDFET  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
)
DS(on  
Package  
Ordering Code  
D
BUZ 215  
500 V  
5 A  
1.5 Ω  
TO-220 AB  
C67078-A1400-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
V
500  
V
DS  
DGR  
Ω
R
= 20 k  
500  
5
GS  
Continuous drain current  
I
I
A
D
T = 30 °C  
C
Pulsed drain current  
Dpuls  
T = 25 °C  
C
20  
Gate source voltage  
Power dissipation  
V
P
± 20  
V
GS  
W
tot  
T = 25 °C  
C
75  
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
≤
Thermal resistance, chip case  
R
R
1.67  
75  
K/W  
thJC  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
thJA  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  
BUZ 215  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
GS  
= 0 V, I = 0.25 mA, T = 25 °C  
500  
2.1  
-
-
D
j
Gate threshold voltage  
=
V
V
I = 1 mA  
3.5  
4
GS DS, D  
Zero gate voltage drain current  
I
I
µA  
V
DS  
V
DS  
= 500 V, V = 0 V, T = 25 °C  
-
-
20  
250  
GS  
j
= 500 V, V = 0 V, T = 125 °C  
100  
1000  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
nA  
GSS  
V
GS  
-
-
10  
100  
1.5  
DS  
Drain-Source on-resistance  
= 10 V, I = 3.2 A  
R
Ω
DS(on)  
V
GS  
1.4  
D
Semiconductor Group  
2
07/96  
BUZ 215  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
DS  
2 I  
R I = 3.2 A  
1.7  
2.7  
-
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
oss  
V
GS  
-
-
-
1500  
110  
40  
2000  
170  
70  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 2.6 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R
GS  
= 50  
-
-
-
-
30  
45  
Rise time  
= 30 V, V = 10 V, I = 2.6 A  
r
V
DD  
GS  
D
Ω
R
GS  
= 50  
40  
60  
Turn-off delay time  
= 30 V, V = 10 V, I = 2.6 A  
d(off)  
V
DD  
GS  
D
Ω
R
GS  
= 50  
110  
50  
140  
65  
Fall time  
= 30 V, V = 10 V, I = 2.6 A  
f
V
DD  
GS  
D
Ω
= 50  
R
GS  
Semiconductor Group  
3
07/96  
BUZ 215  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
5
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
C
-
20  
Inverse diode forward voltage  
V
SD  
V
V
GS  
= 0 V, I = 10 A  
1.3  
180  
0.65  
1.6  
250  
1.2  
F
Reverse recovery time  
V = 100 V, I =l di /dt = 100 A/µs  
t
ns  
µC  
rr  
R
F S,  
F
Reverse recovery charge  
Q
rr  
=
V = 100 V, I l di /dt = 100 A/µs  
R
F S,  
F
Semiconductor Group  
4
07/96  
BUZ 215  
Drain current  
Power dissipation  
ƒ
I = (T )  
ƒ
P
= (T )  
D
C
tot  
C
≥
parameter: V  
10 V  
GS  
5.5  
A
80  
W
4.5  
ID  
Ptot  
60  
50  
40  
30  
20  
10  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
0
0
0
20  
40  
60  
80 100 120  
°C 160  
TC  
20  
40  
60  
80 100 120  
°C 160  
TC  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
I = (V  
)
Z
= (t )  
th JC  
D
DS  
p
parameter: D = 0.01, T = 25°C  
parameter: D = t / T  
C
p
10 1  
10 2  
K/W  
A
t
= 630.0ns  
1 µs  
p
ID  
ZthJC  
10 0  
10 1  
10 µs  
I
V
10 -1  
D = 0.50  
0.20  
100 µs  
R
10 0  
0.10  
1 ms  
0.05  
10 -2  
0.02  
single pulse  
10 ms  
0.01  
DC  
10 -1  
10 -3  
10 0  
10 1  
10 2  
V 10 3  
VDS  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
5
07/96  
Semiconductor Group  
BUZ 215  
Typ. output characteristics  
ƒ(  
Typ. drain-source on-resistance  
ƒ(  
I =  
V
)
R
=
I )  
D
D
DS  
DS (on)  
parameter: t = 80 µs  
parameter: V  
p
GS  
5.0  
12  
P
tot = 75W  
A
10  
9
Ω
l
a
b
c
d
e
f
k
j
i
V
[V]  
GS  
4.0  
a
b
c
d
e
f
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
ID  
RDS (on)  
h
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
8
g
7
f
g
h
i
6
g
5
h
i
j
e
4
k 10.0  
l 20.0  
j
3
d
b
2
V
[V] =  
b
GS  
a
c
a
0.5  
0.0  
c
d
e
f
g
h
i
j
1
0
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0  
0
4
8
12  
16  
20  
24  
28  
V
34  
0
1
2
3
4
5
6
7
8
A
10  
VDS  
ID  
Typ. transfer characteristics I = f (V  
)
Typ. forward transconductance g = f (I )  
D
fs  
D
GS  
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
≥
≥
V
DS  
2 x I x R  
V
DS  
2 x I x R  
D
DS(on)max  
D
DS(on)max  
5.0  
S
6.0  
A
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
ID  
gfs  
0.5  
0.0  
0.5  
0.0  
0
1
2
3
4
5
6
7
8
V
10  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
A
7.0  
VGS  
ID  
Semiconductor Group  
6
07/96  
BUZ 215  
Gate threshold voltage  
Drain-source on-resistance  
ƒ
= (T )  
j
V
ƒ
= (T )  
j
R
GS (th)  
DS (on)  
parameter: V = V , I = 1 mA  
parameter: I = 3.2 A, V = 10 V  
GS  
DS  
D
D
GS  
4.5  
4.6  
V
98%  
typ  
Ω
4.0  
VGS(th)  
RDS (on)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
2%  
98%  
typ  
0.5  
0.0  
0.4  
0.0  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Typ. capacitances  
Forward characteristics of reverse diode  
C = f (V )  
ƒ
I = (V  
)
DS  
F
SD  
parameter:V = 0V, f = 1MHz  
parameter: T , t = 80 µs  
GS  
j
p
10 1  
10 2  
nF  
A
IF  
C
Ciss  
10 0  
10 -1  
10 -2  
10 1  
10 0  
10 -1  
Coss  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
Crss  
0
5
10  
15  
20  
25  
30  
V
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
7
07/96  
Semiconductor Group  
BUZ 215  
Drain-source breakdown voltage  
ƒ
= (T )  
j
V
(BR)DSS  
600  
V
580  
V(BR)DSS570  
560  
550  
540  
530  
520  
510  
500  
490  
480  
470  
460  
450  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Semiconductor Group  
8
07/96  
BUZ 215  
Package Outlines  
TO-220 AB  
Dimension in mm  
Semiconductor Group  
9
07/96  

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