BUZ356 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); SIPMOS大功率晶体管（N沟道增强型雪崩额定）
| 型号： | BUZ356 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
| 文件： | 总9页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 356
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
)
DS(on
Package
Ordering Code
D
BUZ 356
800 V
5.3 A
2 Ω
TO-218 AA
C67078-S3108-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
I
I
A
D
T = 25 °C
C
5.3
Pulsed drain current
Dpuls
AR
T = 25 °C
C
21
5.1
15
Avalanche current,limited by T
jmax
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
E
mJ
jmax
AR
AS
E
I = 6 A, V = 50 V, R = 25 Ω
D
DD
GS
L = 37.5 mH, T = 25 °C
720
j
±
Gate source voltage
Power dissipation
V
P
20
V
GS
W
tot
T = 25 °C
C
125
Operating temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
Storage temperature
stg
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤ 1
K/W
thJC
thJA
R
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 356
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I = 0.25 mA, T = 25 °C
800
2.1
-
-
D
j
Gate threshold voltage
=
V
V
I = 1 mA
3
4
GS DS, D
Zero gate voltage drain current
I
I
µA
V
DS
V
DS
= 800 V, V = 0 V, T = 25 °C
-
-
-
1
GS
j
= 800 V, V = 0 V, T = 125 °C
10
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
nA
GSS
V
GS
-
-
10
100
2
DS
Drain-Source on-resistance
= 10 V, I = 3.9 A
R
Ω
DS(on)
V
GS
1.6
D
Semiconductor Group
2
07/96
BUZ 356
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
DS
2 I
R I = 3.9 A
2.5
6.8
-
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
GS
-
-
-
1750
190
100
2350
290
150
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 2.1 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
25
40
Rise time
= 30 V, V = 10 V, I = 2.1 A
r
V
DD
GS
D
Ω
R
GS
= 50
130
400
130
200
530
175
Turn-off delay time
= 30 V, V = 10 V, I = 2.1 A
d(off)
V
DD
GS
D
Ω
= 50
R
GS
Fall time
= 30 V, V = 10 V, I = 2.1 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 356
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
4
16
1.4
-
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 12 A
0.95
0.3
2.5
F
Reverse recovery time
V = 100 V, I =l di /dt = 100 A/µs
t
µs
µC
rr
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 100 V, I l di /dt = 100 A/µs
R
-
F S,
F
Semiconductor Group
4
07/96
BUZ 356
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
5.5
A
130
W
110
100
90
4.5
ID
Ptot
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
0.5
0.0
10
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 1
10 2
K/W
A
t
= 29.0µs
p
ID
ZthJC
10 0
100 µs
10 1
I
10 -1
1 ms
D = 0.50
0.20
V
10 0
0.10
R
10 ms
0.05
10 -2
0.02
0.01
single pulse
10 -3
DC
V 10 3
10 -1
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
5
07/96
Semiconductor Group
BUZ 356
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
6.5
12
Ptot
= 125W
k
j
i
l
h g
Ω
e
f
a
b
A
10
9
5.5
V
[V]
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
GS
a
ID
RDS (on)
5.0
d
b
c
d
e
f
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
8
7
c
g
h
i
6
c
5
d
e
j
4
f
h
k 10.0
g
i
l
20.0
3
j
b
2
V
[V] =
b
GS
a
c
d
e
f
g
h
i
j
1
0
0.5
0.0
a
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0
10
20
30
40
50
V
65
0
1
2
3
4
5
6
7
8
A
10
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
fs
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
10
S
8
16
A
ID
gfs
12
10
8
7
6
5
4
6
3
4
2
2
0
1
0
0
1
2
3
4
5
6
7
8
V
10
0
2
4
6
8
A
12
VGS
ID
Semiconductor Group
6
07/96
BUZ 356
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 3.9 A, V = 10 V
GS
DS
D
D
GS
8.0
4.6
V
98%
Ω
4.0
VGS(th)
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
6.0
5.0
4.0
3.0
2.0
typ
2%
98%
typ
1.0
0.0
0.4
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 4
10 2
pF
A
IF
C
Ciss
10 3
10 2
10 1
10 1
10 0
10 -1
Coss
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 356
ƒ
Avalanche energy E = (T )
Typ. gate charge
AS
j
ƒ
parameter: I = 6 A, V = 50 V
V
= (Q
)
D
DD
GS
Gate
Ω
R
= 25 , L = 37.5 mH
parameter: I
= 9 A
D puls
GS
16
750
mJ
V
650
EAS 600
550
VGS
12
500
10
8
450
V
V
DS max
0,2
0,8
DS max
400
350
300
6
250
200
4
150
100
2
50
0
0
0
20
40
60
80
100
120
°C
Tj
160
20 40 60 80 100 120 140 160 nC 190
QGate
Drain-source breakdown voltage
ƒ
= (T )
j
V
(BR)DSS
960
V
920
V(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
07/96
BUZ 356
Package Outlines
TO-218 AA
Dimension in mm
Semiconductor Group
9
07/96
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