BUZ50B [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode); SIPMOS大功率晶体管（ N沟道增强模式）
| 型号： | BUZ50B |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor (N channel Enhancement mode) |
| 文件： | 总9页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 50 B
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
)
DS(on
Package
Ordering Code
D
BUZ 50 B
1000 V
2 A
8 Ω
TO-220 AB
C67078-A1307-A4
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain source voltage
Drain-gate voltage
V
V
1000
V
DS
DGR
Ω
R
= 20 k
1000
2
GS
Continuous drain current
I
I
A
D
T = 25 °C
C
Pulsed drain current
Dpuls
T = 25 °C
C
8
Gate source voltage
Power dissipation
V
P
± 20
V
GS
W
tot
T = 25 °C
C
78
Operating temperature
Storage temperature
T
T
-55 ... ...+ 150 °C
-55 ... ...+ 150
j
stg
≤
Thermal resistance, chip case
R
R
1.6
K/W
thJC
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
75
thJA
C
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 50 B
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I = 0.25 mA, T = 25 °C
1000
2.1
-
-
D
j
Gate threshold voltage
=
V
V
I = 1 mA
3
4
GS DS, D
Zero gate voltage drain current
I
I
µA
V
DS
V
DS
= 1000 V, V = 0 V, T = 25 °C
-
-
20
250
GS
j
= 1000 V, V = 0 V, T = 125 °C
100
1000
GS
j
Gate-source leakage current
= 20 V, V = 0 V
nA
GSS
V
GS
-
-
10
100
8
DS
Drain-Source on-resistance
= 10 V, I = 1.5 A
R
Ω
DS(on)
V
GS
6.5
D
Semiconductor Group
2
07/96
BUZ 50 B
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = 1.5 A
0.7
1.5
1600
70
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
-
-
-
2100
120
55
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
30
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 2 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
30
45
Rise time
= 30 V, V = 10 V, I = 2 A
r
V
DD
GS
D
Ω
R
GS
= 50
40
60
Turn-off delay time
= 30 V, V = 10 V, I = 2 A
d(off)
V
DD
GS
D
Ω
R
GS
= 50
110
60
140
80
Fall time
= 30 V, V = 10 V, I = 2 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 50 B
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
2
8
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 6 A
1.05
2
1.3
-
F
Reverse recovery time
V = 100 V, I =l di /dt = 100 A/µs
t
µs
µC
rr
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 100 V, I l di /dt = 100 A/µs
R
15
-
F S,
F
Semiconductor Group
4
07/96
BUZ 50 B
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
2.2
A
80
W
1.8
ID
Ptot
60
50
40
30
20
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0
0
20
40
60
80 100 120
°C 160
TC
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 2
10 1
A
K/W
ID
ZthJC
t
= 880.0ns
1 µs
10 1
10 0
p
10 µs
I
100 µs
10 0
10 -1
D = 0.50
V
0.20
0.10
0.05
0.02
0.01
1 ms
R
10 ms
10 -1
10 -2
single pulse
DC
10 -2
10 -3
10 0
10 1
10 2
V 10 3
VDS
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
5
07/96
Semiconductor Group
BUZ 50 B
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
4.5
26
P
tot = 78W
l
j
k
g
h
i
Ω
a
b
c
d
f
A
3.5
3.0
2.5
2.0
1.5
1.0
V
[V]
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
22
GS
a
ID
RDS (on)
20
b
c
d
e
f
e
18
16
14
12
10
8
d
g
h
i
e
f
j
g
i
j
k 10.0
h
c
a
l
20.0
k
6
b
4
V
[V] =
b
GS
a
0.5
0.0
c
d
e
f
g
h
i
j
k
2
0
4.5 5.0 5.5 6.0 6.5 7.0
7.5 8.0 9.0 10.0 20.0
0
10
20
30
40
50
60
V
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
A
3.6
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
fs
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
2.0
3.0
A
ID
gfs
S
2.0
1.5
1.0
1.0
0.5
0.0
0.5
0.0
0
1
2
3
4
5
6
7
8
V
10
0.0
0.5
1.0
1.5
2.0
A
3.0
VGS
ID
Semiconductor Group
6
07/96
BUZ 50 B
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 1.5 A, V = 10 V
GS
DS
D
D
GS
38
4.6
V
Ω
98%
4.0
32
28
24
20
16
12
8
VGS(th)
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
typ
2%
98%
typ
4
0
0.4
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 1
10 1
nF
A
IF
C
Ciss
10 0
10 -1
10 -2
10 0
10 -1
10 -2
Tj = 25 °C typ
Coss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
Crss
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 50 B
Typ. gate charge
Drain-source breakdown voltage
ƒ
V
= (Q
)
ƒ
= (T )
j
V
GS
Gate
(BR)DSS
parameter: I
= 4 A
D puls
16
1200
V
V
1160
VGS
V(BR)DS1S140
1120
1100
1080
1060
1040
1020
1000
980
12
10
8
V
V
DS max
0,2
0,8
DS max
6
4
960
2
940
920
900
0
0
10
20
30
40
50 nC
QGate
65
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
07/96
BUZ 50 B
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
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