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BUZ71S2 [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); SIPMOS大功率晶体管（N沟道增强型雪崩额定）
BUZ71S2
型号： BUZ71S2
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
SIPMOS大功率晶体管（N沟道增强型雪崩额定）

晶体 晶体管 功率场效应晶体管
文件： 总9页 (文件大小：133K)
中文：  中文翻译
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BUZ 71 S2  
Not for new design  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
I
R
Package  
Ordering Code  
DS  
D
DS(on)  
Ω
BUZ 71 S2  
60 V  
14 A  
0.1  
TO-220 AB  
C67078-S1316-A9  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
I
I
A
D
T = 28 °C  
14  
C
Pulsed drain current  
Dpuls  
T = 25 °C  
56  
14  
1
C
Avalanche current,limited by T  
jmax  
AR  
Avalanche energy,periodic limited by T  
Avalanche energy, single pulse  
E
mJ  
jmax  
AR  
AS  
E
Ω
I = 14 A, V = 25 V, R = 25  
D
DD  
GS  
L = 30.6 µH, T = 25 °C  
6
j
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
40  
C
Operating temperature  
Storage temperature  
T
T
-55 ... + 150 °C  
-55 ... + 150  
j
stg  
≤
≤
Thermal resistance, chip case  
R
R
3.1  
75  
K/W  
thJC  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
thJA  
E
55 / 150 / 56  
Semiconductor Group  
1
07/96  
BUZ 71 S2  
Not for new design  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
= 0 V, I = 0.25 mA, T = 25 °C  
60  
-
-
GS  
D
j
Gate threshold voltage  
I = 1 mA  
V
=V  
2.1  
3
4
GS DS, D  
Zero gate voltage drain current  
I
I
µA  
V
V
= 60 V, V = 0 V, T = 25 °C  
-
-
0.1  
10  
1
DS  
DS  
GS  
j
= 60 V, V = 0 V, T = 125 °C  
100  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
nA  
GSS  
V
-
-
10  
100  
0.1  
GS  
DS  
Ω
Drain-Source on-resistance  
= 10 V, I = 9 A  
R
DS(on)  
V
0.08  
GS  
D
Semiconductor Group  
2
07/96  
BUZ 71 S2  
Not for new design  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
2 I  
R I = 9 A  
4
-
7.7  
450  
220  
85  
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
V
600  
350  
150  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
V
-
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
-
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 3 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R
= 50  
-
-
-
-
20  
40  
55  
40  
30  
60  
70  
55  
GS  
Rise time  
= 30 V, V = 10 V, I = 3 A  
r
V
DD  
GS  
D
Ω
= 50  
R
GS  
Turn-off delay time  
= 30 V, V = 10 V, I = 3 A  
d(off)  
V
DD  
GS  
D
R
= 50 Ω  
GS  
Fall time  
= 30 V, V = 10 V, I = 3 A  
f
V
DD  
GS  
D
R
= 50 Ω  
GS  
Semiconductor Group  
3
07/96  
BUZ 71 S2  
Not for new design  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
14  
56  
1.8  
-
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
-
C
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 28 A  
1.5  
60  
0.1  
GS  
F
Reverse recovery time  
t
ns  
µC  
rr  
=
V = 30 V, I l di /dt = 100 A/µs  
R
F S,  
F
Reverse recovery charge  
Q
rr  
=
V = 30 V, I l di /dt = 100 A/µs  
-
R
F S,  
F
Semiconductor Group  
4
07/96  
BUZ 71 S2  
Not for new design  
Drain current  
Power dissipation  
ƒ
I = (T )  
ƒ
P
= (T )  
D
C
tot  
C
≥
parameter: V  
10 V  
GS  
15  
A
45  
W
35  
30  
25  
20  
15  
10  
5
12  
11  
10  
9
ID  
Ptot  
8
7
6
5
4
3
2
1
0
0
0
0
20  
40  
60  
80 100 120  
°C 160  
TC  
20  
40  
60  
80 100 120  
°C 160  
TC  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
I = (V  
)
Z
= (t )  
th JC  
D
DS  
p
parameter: D = 0.01, T = 25°C  
parameter: D = t / T  
C
p
10 1  
10 2  
t
= 4.0µs  
10 µs  
p
I
K/W  
A
100 µs  
V
ID  
ZthJC  
10 0  
R
10 1  
1 ms  
10 -1  
10 ms  
D = 0.50  
0.20  
0.10  
0.05  
0.02  
0.01  
10 0  
10 -2  
DC  
single pulse  
10 -1  
10 -3  
10 0  
10 1  
V 10 2  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
VDS  
tp  
5
07/96  
Semiconductor Group  
BUZ 71 S2  
Not for new design  
Typ. output characteristics  
ƒ(  
Typ. drain-source on-resistance  
ƒ(  
I =  
V
)
R
=
I )  
D
D
DS  
DS (on)  
parameter: t = 80 µs  
parameter: V  
p
GS  
32  
0.32  
P
tot = 40W  
l
a
b
c
d
e
f
g
k
j
i
Ω
A
24  
20  
16  
12  
8
V
h
[V]  
GS  
a
4.0  
ID  
RDS (on)  
0.24  
b
c
d
e
f
4.5  
5.0  
g
e
5.5  
0.20  
0.16  
0.12  
0.08  
6.0  
f
6.5  
g
h
i
7.0  
7.5  
8.0  
h
j
9.0  
d
b
i
k
l
10.0  
20.0  
j
k
c
a
V
[V] =  
b
GS  
a
4
0
0.04  
0.00  
c
d
e
f
g
h
i
j
k
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0  
0.0  
1.0  
2.0  
3.0  
4.0  
V
6.0  
0
4
8
12  
16  
20  
24  
A
30  
VDS  
ID  
Typ. transfer characteristics I = f (V  
)
Typ. forward transconductance g = f (I )  
D
D
GS  
fs  
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
≥
≥
V
DS  
2 x I x R  
V
DS  
2 x I x R  
D
DS(on)max  
D
DS(on)max  
10  
S
8
18  
A
ID  
gfs  
14  
12  
10  
8
7
6
5
4
6
3
4
2
2
0
1
0
0
1
2
3
4
5
6
7
8
V
VGS  
10  
0
2
4
6
8
10  
12  
A
ID  
16  
Semiconductor Group  
6
07/96  
BUZ 71 S2  
Not for new design  
Gate threshold voltage  
Drain-source on-resistance  
ƒ
= (T )  
j
V
ƒ
= (T )  
j
R
GS (th)  
DS (on)  
parameter: V = V , I = 1 mA  
parameter: I = 9 A, V = 10 V  
GS  
DS  
D
D
GS  
0.32  
4.6  
V
98%  
Ω
4.0  
VGS(th)  
RDS (on)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.24  
0.20  
0.16  
0.12  
0.08  
typ  
2%  
98%  
typ  
0.04  
0.00  
0.4  
0.0  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Typ. capacitances  
Forward characteristics of reverse diode  
ƒ
C = f (V )  
I = (V  
)
DS  
F
SD  
parameter: T , t = 80 µs  
parameter:V = 0V, f = 1MHz  
j
p
GS  
10 1  
10 2  
nF  
A
C
IF  
10 0  
10 -1  
10 -2  
10 1  
10 0  
10 -1  
Ciss  
Coss  
Crss  
Tj = 25 °C typ  
Tj = 150 °C typ  
Tj = 25 °C (98%)  
Tj = 150 °C (98%)  
0
5
10  
15  
20  
25  
30  
V
VDS  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
7
07/96  
Semiconductor Group  
BUZ 71 S2  
Not for new design  
ƒ
Avalanche energy E = (T )  
Typ. gate charge  
AS  
j
ƒ
parameter: I = 14 A, V = 25 V  
V
= (Q  
)
D
DD  
GS  
Gate  
Ω
R
= 25 , L = 30.6 µH  
parameter: I  
= 22 A  
D puls  
GS  
6.5  
mJ  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
16  
V
EAS  
VGS  
12  
V
V
DS max  
0,2  
0,8  
DS max  
10  
8
6
4
2
0.5  
0.0  
0
0
20  
40  
60  
80  
100  
120  
°C  
Tj  
160  
4
8
12  
16  
20  
24 nC 30  
QGate  
Drain-source breakdown voltage  
ƒ
= (T )  
j
V
(BR)DSS  
71  
V
68  
V(BR)DSS  
66  
64  
62  
60  
58  
56  
54  
-60  
-20  
20  
60  
100  
°C  
Tj  
160  
Semiconductor Group  
8
07/96  
BUZ 71 S2  
Not for new design  
Package Outlines  
TO-220 AB  
Dimension in mm  
Semiconductor Group  
9
07/96  

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