BUZ81 [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); SIPMOS大功率晶体管(N沟道增强型雪崩额定)型号: | BUZ81 |
厂家: | Infineon |
描述: | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
文件: | 总9页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BUZ 81
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
)
DS(on
Package
Ordering Code
D
BUZ 81
800 V
4 A
2.5 Ω
TO-220 AB
C67078-S1345-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
I
I
A
D
T = 48 °C
C
4
Pulsed drain current
Dpuls
AR
T = 25 °C
C
16
4
Avalanche current,limited by T
jmax
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
E
13
mJ
jmax
AR
AS
E
I = 4 A, V = 50 V, R = 25 Ω
D
DD
GS
L = 48 mH, T = 25 °C
410
j
±
Gate source voltage
Power dissipation
V
P
20
V
GS
W
tot
T = 25 °C
C
125
Operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Thermal resistance, chip case
R
≤ 1
K/W
thJC
thJA
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 81
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I = 0.25 mA, T = 25 °C
800
2.1
-
-
D
j
Gate threshold voltage
=
V
V
I = 1 mA
3
4
GS DS, D
Zero gate voltage drain current
I
I
µA
V
DS
V
DS
= 800 V, V = 0 V, T = 25 °C
-
-
0.1
10
1
GS
j
= 800 V, V = 0 V, T = 125 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
nA
GSS
V
GS
-
-
10
2
100
2.5
DS
Drain-Source on-resistance
= 10 V, I = 2.8 A
R
Ω
DS(on)
V
GS
D
Semiconductor Group
2
07/96
BUZ 81
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = 2.8 A
1
-
4
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
900
95
50
1350
140
75
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
-
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 2.1 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
15
25
Rise time
= 30 V, V = 10 V, I = 2.1 A
r
V
DD
GS
D
Ω
R
GS
= 50
65
85
Turn-off delay time
= 30 V, V = 10 V, I = 2.1 A
d(off)
V
DD
GS
D
Ω
R
GS
= 50
200
65
270
85
Fall time
= 30 V, V = 10 V, I = 2.1 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 81
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
4
16
1.4
-
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 8 A
1
F
Reverse recovery time
V = 100 V, I =l di /dt = 100 A/µs
t
µs
µC
rr
0.3
2.5
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 100 V, I l di /dt = 100 A/µs
R
-
F S,
F
Semiconductor Group
4
07/96
BUZ 81
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
4.5
A
130
W
110
100
90
ID
Ptot
3.5
3.0
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
0.5
0.0
10
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 2
10 1
K/W
10 0
A
ID
ZthJC
t
= 25.0µs
p
10 1
10 -1
10 -2
10 -3
100 µs
1 ms
I
D = 0.50
0.20
V
10 0
0.10
10 ms
0.05
R
0.02
single pulse
10 -4
0.01
DC
V 10 3
10 -1
10 -5
10 0
10 1
10 2
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
5
07/96
Semiconductor Group
BUZ 81
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
l
9
8.0
P
tot = 125W
k
j
i
h
f
g
e
a
b
c
A
7
6
5
4
3
2
Ω
V
[V]
GS
a
4.0
ID
RDS (on)
b
c
d
e
f
4.5
5.0
6.0
d
5.5
5.0
4.0
3.0
2.0
6.0
6.5
g
h
i
7.0
c
7.5
d
8.0
e
f
j
9.0
g
h
k
l
10.0
20.0
i
j
b
k
V
[V] =
b
GS
a
1.0
0.0
1
0
c
d
e
f
g
h
i
j
k
a
4.55.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0
5
10 15 20 25 30 35 40
V
50
0.0
1.0
2.0
3.0
4.0
5.0
A
7.0
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
fs
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
5.0
S
5.5
A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID
gfs
0.5
0.0
0.5
0.0
0
1
2
3
4
5
6
7
8
V
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
A
5.0
VGS
ID
Semiconductor Group
6
07/96
BUZ 81
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 2.8 A, V = 10 V
GS
DS
D
D
GS
12
4.6
V
Ω
98%
4.0
10
9
VGS(th)
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
typ
2%
8
7
6
5
98%
typ
4
3
2
0.4
0.0
1
0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 1
10 2
nF
A
IF
C
10 0
10 -1
10 -2
10 1
10 0
10 -1
Ciss
Coss
Crss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 81
ƒ
Avalanche energy E = (T )
Typ. gate charge
AS
j
ƒ
parameter: I = 4 A, V = 50 V
V
= (Q
)
D
DD
GS
Gate
Ω
R
= 25 , L = 48 mH
parameter: I
= 6 A
D puls
GS
450
mJ
16
V
EAS
VGS
350
300
250
200
150
100
12
V
V
DS max
0,2
0,8
10
8
DS max
6
4
2
0
50
0
20
40
60
80
100
120
°C
Tj
160
0
20 40 60 80 100 120 140 160 nC 200
QGate
Drain-source breakdown voltage
ƒ
= (T )
j
V
(BR)DSS
960
V
920
V(BR)DSS
900
880
860
840
820
800
780
760
740
720
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
07/96
BUZ 81
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
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