BUZ91A [INFINEON]
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated); SIPMOS大功率晶体管（N沟道增强型雪崩额定）
| 型号： | BUZ91A |
| 厂家： | 
Infineon |
| 描述： | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
| 文件： | 总9页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUZ 91 A
®
SIPMOS Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
V
DS
I
R
)
DS(on
Package
Ordering Code
D
BUZ 91 A
600 V
8 A
0.9 Ω
TO-220 AB
C67078-S1342-A3
Maximum Ratings
Parameter
Symbol
Values
Unit
Continuous drain current
I
I
I
A
D
T = 33 °C
C
8
Pulsed drain current
Dpuls
AR
T = 25 °C
C
32
8
Avalanche current,limited by T
jmax
Avalanche energy,periodic limited by T
Avalanche energy, single pulse
E
13
mJ
jmax
AR
AS
E
I = 8 A, V = 50 V, R = 25 Ω
D
DD
GS
L = 16.3 mH, T = 25 °C
570
j
±
Gate source voltage
Power dissipation
V
P
20
V
GS
W
tot
T = 25 °C
C
150
Operating temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
Storage temperature
stg
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R
≤ 0.83
K/W
thJC
thJA
R
75
E
55 / 150 / 56
Semiconductor Group
1
07/96
BUZ 91 A
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain- source breakdown voltage
V
V
V
(BR)DSS
GS(th)
DSS
V
GS
= 0 V, I = 0.25 mA, T = 25 °C
600
2.1
-
-
D
j
Gate threshold voltage
=
V
V
I = 1 mA
3
4
GS DS, D
Zero gate voltage drain current
I
I
µA
V
DS
V
DS
= 600 V, V = 0 V, T = 25 °C
-
-
0.1
10
1
GS
j
= 600 V, V = 0 V, T = 125 °C
100
GS
j
Gate-source leakage current
= 20 V, V = 0 V
nA
GSS
V
GS
-
-
10
100
0.9
DS
Drain-Source on-resistance
= 10 V, I = 5 A
R
Ω
DS(on)
V
GS
0.8
D
Semiconductor Group
2
07/96
BUZ 91 A
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Dynamic Characteristics
Transconductance
g
S
fs
≥
V
2 I
R I = 5 A
5
-
8.5
-
DS
* D * DS(on)max, D
Input capacitance
= 0 V, V = 25 V, f = 1 MHz
C
C
C
pF
iss
oss
V
1400
180
65
2100
270
100
GS
DS
Output capacitance
= 0 V, V = 25 V, f = 1 MHz
V
-
GS
DS
Reverse transfer capacitance
= 0 V, V = 25 V, f = 1 MHz
rss
V
-
GS
DS
Turn-on delay time
= 30 V, V = 10 V, I = 3 A
t
t
t
t
ns
d(on)
V
DD
GS
D
Ω
R
GS
= 50
-
-
-
-
20
30
Rise time
= 30 V, V = 10 V, I = 3 A
r
V
DD
GS
D
Ω
R
GS
= 50
70
110
330
100
Turn-off delay time
= 30 V, V = 10 V, I = 3 A
d(off)
V
DD
GS
D
Ω
R
GS
= 50
250
80
Fall time
= 30 V, V = 10 V, I = 3 A
f
V
DD
GS
D
Ω
= 50
R
GS
Semiconductor Group
3
07/96
BUZ 91 A
Electrical Characteristics, at T = 25°C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Reverse Diode
Inverse diode continuous forward current I
A
S
T = 25 °C
-
-
-
-
-
-
8
32
1.2
-
C
Inverse diode direct current,pulsed
I
SM
T = 25 °C
C
-
Inverse diode forward voltage
V
SD
V
V
GS
= 0 V, I = 16 A
1.1
480
6.5
F
Reverse recovery time
V = 100 V, I =l di /dt = 100 A/µs
t
ns
µC
rr
R
F S,
F
Reverse recovery charge
Q
rr
=
V = 100 V, I l di /dt = 100 A/µs
R
-
F S,
F
Semiconductor Group
4
07/96
BUZ 91 A
Drain current
Power dissipation
ƒ
I = (T )
ƒ
P
= (T )
D
C
tot
C
≥
parameter: V
10 V
GS
9
160
W
A
ID
Ptot
7
120
100
80
6
5
4
3
2
60
40
20
1
0
0
0
0
20
40
60
80 100 120
°C 160
TC
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
D
DS
p
parameter: D = 0.01, T = 25°C
parameter: D = t / T
C
p
10 2
10 0
t
= 3.8µs
p
A
K/W
10 µs
ID
ZthJC
100 µs
10 1
10 -1
I
1 ms
V
10 ms
D = 0.50
R
0.20
0.10
0.05
0.02
0.01
10 0
10 -2
single pulse
DC
10 -1
10 -3
10 0
10 1
10 2
V 10 3
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
VDS
tp
5
07/96
Semiconductor Group
BUZ 91 A
Typ. output characteristics
ƒ(
Typ. drain-source on-resistance
ƒ(
I =
V
)
R
=
I )
D
D
DS
DS (on)
parameter: t = 80 µs
parameter: V
p
GS
2.8
18
P
tot = 150W
k
a
b
c
h
g
j
i
f
Ω
e
A
14
12
10
8
d
2.4
V
[V]
GS
a
ID
RDS (on)
2.2
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
10.0
20.0
b
c
d
e
f
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
c
g
h
i
d
e
f
g
h
j
6
i
b
j
k
l
k
4
0.4
V
[V] =
b
GS
a
2
0
a
c
d
e
f
g
h
i
j
k
0.2
0.0
4.5 5.0 5.5 6.0 6.5 7.0
7.5 8.0 9.0 10.0 20.0
0
5
10 15 20 25 30 35 40
V
50
0
2
4
6
8
10 12 14
A
18
VDS
ID
Typ. transfer characteristics I = f (V
)
Typ. forward transconductance g = f (I )
D
fs
D
GS
parameter: t = 80 µs
parameter: t = 80 µs,
p
p
≥
≥
V
DS
2 x I x R
V
DS
2 x I x R
D
DS(on)max
D
DS(on)max
10
A
8
12
S
10
9
ID
gfs
7
8
6
7
5
6
5
4
4
3
3
2
2
1
0
1
0
0
1
2
3
4
5
6
7
8
V
10
0
1
2
3
4
5
6
7
A
9
VGS
ID
Semiconductor Group
6
07/96
BUZ 91 A
Gate threshold voltage
Drain-source on-resistance
ƒ
= (T )
j
V
ƒ
= (T )
j
R
GS (th)
DS (on)
parameter: V = V , I = 1 mA
parameter: I = 5 A, V = 10 V
GS
DS
D
D
GS
4.0
4.6
V
98%
Ω
4.0
VGS(th)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
RDS (on)
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
typ
2%
98%
typ
0.4
0.0
0.4
0.0
-60
-20
20
60
100
°C
Tj
160
-60
-20
20
60
100
°C
Tj
160
Typ. capacitances
Forward characteristics of reverse diode
C = f (V )
ƒ
I = (V
)
DS
F
SD
parameter:V = 0V, f = 1MHz
parameter: T , t = 80 µs
GS
j
p
10 1
10 2
nF
A
IF
C
Ciss
10 0
10 -1
10 -2
10 1
10 0
10 -1
Coss
Tj = 25 °C typ
Crss
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0
5
10
15
20
25
30
V
40
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VDS
VSD
7
07/96
Semiconductor Group
BUZ 91 A
ƒ
Avalanche energy E = (T )
Typ. gate charge
AS
j
ƒ
parameter: I = 8 A, V = 50 V
V
= (Q
)
D
DD
GS
Gate
Ω
R
= 25 , L = 16.3 mH
parameter: I
= 12 A
D puls
GS
600
mJ
16
V
500
450
400
350
300
250
200
150
100
EAS
VGS
12
10
8
V
V
DS max
0,2
0,8
DS max
6
4
2
50
0
0
0
20
40
60
80
100
120
°C
Tj
160
20
40
60
80
100
130
QGate
Drain-source breakdown voltage
ƒ
= (T )
j
V
(BR)DSS
710
V
680
V(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100
°C
Tj
160
Semiconductor Group
8
07/96
BUZ 91 A
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
相关型号：
BUZ91A-E3045
Power Field-Effect Transistor, 8A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ91A-E3046
Power Field-Effect Transistor, 8A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ92-E3044
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ92-E3045
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ92-E3046
Power Field-Effect Transistor, 3.3A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ93-E3044
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ93-E3045
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
BUZ93-E3046
Power Field-Effect Transistor, 3.6A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明