BXY43T1ESZZZA1 [INFINEON]

Pin Diode,;
BXY43T1ESZZZA1
型号: BXY43T1ESZZZA1
厂家: Infineon    Infineon
描述:

Pin Diode,

文件: 总5页 (文件大小:188K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BXY43  
HiRel Silicon PIN Diode  
T
T1  
HiRel Discrete and Microwave  
Semiconductor  
Current controlled RF resistor for RF  
attenuators and switches  
High reverse voltage  
Hermetically sealed microwave  
package  
Space Qualified  
ESA/SCC Detail Spec. No.: 5513/030  
Type Variant No.s 01 to 03  
ESD: Electrostatic discharge sensitive device,  
observe handling precautions!  
Type  
Marking Ordering Code  
see below  
Pin Configuration Package  
BXY43-T (ql)  
-
T
1
1
2
BXY43-T1 (ql)  
T1  
2
(ql) Quality Level:  
P: Professional Quality  
H: High Rel Quality  
S: Space Quality  
ES: ESA Space Quality  
(see order instructions for ordering example)  
IFAG IMM RPD D HIR  
1 of 5  
V2, February 2011  
BXY43  
Maximum Ratings  
Parameter  
Symbol  
VR  
Values  
150  
Unit  
V
Reverse Voltage  
Forward Current  
IF  
400  
mA  
mW  
°C  
Power Dissipation 1)  
Operating Temperature Range  
Storage Temperature Range  
Soldering Temperature 2)  
Junction Temperature  
Ptot  
500  
Top  
-55 to +150  
-65 to +175  
+235  
Tstg  
Tsol  
Tj  
°C  
°C  
150  
°C  
Thermal Resistance Junction-Case  
Rth(j-c)  
K/W  
100  
125  
BXY43-T  
BXY43-T1  
Notes.:  
1.)For BXY43-T:  
At TCASE = 100 °C. For TCASE > 100 °C derating is required.  
For BXY43-T1: At TCASE = 87,5 °C. For TCASE > 87,5 °C derating is required.  
2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have  
elapsed.  
Electrical Characteristics  
at TA=25°C; unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
100  
10  
DC Characteristics  
Reverse Current 1  
VR1=150V  
IR1  
IR2  
VF  
-
-
-
-
nA  
nA  
V
Reverse Current 2  
VR2=100V  
-
Forward Voltage  
IF=100mA  
0,97  
1
IFAG IMM RPD D HIR  
2 of 5  
V2, February 2011  
BXY43  
Electrical Characteristics (continued)  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
AC Characteristics  
Total Capacitance  
CT  
pF  
VR=50V; f=1MHz  
BXY43-T, -T1  
-
-
0,3  
55  
0,45  
70  
Forward Resistance 1  
f=100MHz, IF1=20µA  
Forward Resistance 2  
f=100MHz, IF2=1mA  
Forward Resistance 3  
f=100MHz, IF3=10mA  
Minority Carrier Lifetime  
IF=10mA, IR=6mA, IR=3mA  
RF1  
RF2  
RF3  
τL  
ns  
-
2,2  
0,9  
650  
3,0  
1,5  
-
250  
IFAG IMM RPD D HIR  
3 of 5  
V2, February 2011  
BXY43  
T Package  
B
X1  
A
C
Symbol  
Millimetre  
Y1  
Y2  
min  
1,30  
1,15  
-
max  
1,45  
1,35  
0,40  
A
B
C
2
1
T1 Package  
Symbol  
Millimetre  
min  
1,30  
1,15  
-
0,10  
-
0,06  
5,50  
0,40  
max  
1,45  
1,35  
0,40  
0,50  
0,30  
0,10  
-
X1  
B
A
A
B
C
D
E
F
Y1  
Y2  
C
2
1
D
E
F
H
G
G
G
H
0,60  
IFAG IMM RPD D HIR  
4 of 5  
V2, February 2011  
BXY43  
Edition 2011-02  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© Infineon Technologies AG 2011  
All Rights Reserved.  
Attention please!  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or  
hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation warranties of non-infringement of intellectual  
property rights of an third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For  
information on the types in question please contact your nearest Infineon Technologies  
Office.  
Infineon Technologies Components may only be used in life-support devices or systems with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system, or to affect  
the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body, or to  
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be endangered.  
IFAG IMM RPD D HIR  
5 of 5  
V2, February 2011  

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