BXY44P-FPS [INFINEON]
Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED, FP-4;
| 型号： | BXY44P-FPS |
| 厂家： | 
Infineon |
| 描述： | Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED, FP-4 半导体 二极管 开关 微波 衰减器 |
| 文件： | 总8页 (文件大小：133K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiRel Silicon PIN Diode
BXY 44
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ Current controlled RF resistor for RF attenuators and
switches
¥ High reverse voltage
¥ Hermetically sealed microwave package
T
¥
qualified
¥ ESA/SCC Detail Spec. No.: 5513/030
ESD:
Electrostatic discharge sensitive device, observe
handling precautions!
T1
T2
FP
Type
Marking Ordering Pin
Pack.
Code
Configuration
BXY 44-T (ql)
-
see below
T
BXY 44-T1 (ql) -
BXY 44-T2 (ql) -
BXY 44-FP (ql) -
see below
see below
see below
T1
T2
FP
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X148
H: High Rel Quality,
S: Space Quality,
Ordering Code: on request
Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X162
(see Chapter Order Instructions for ordering example)
Semiconductor Group
1
Draft A03 1998-04-01
BXY 44
Table 1
Maximum Ratings
Parameter
Symbol
VR
Limit Values
200
Unit
V
Reverse voltage
Forward current
IF
400
mA
mW
°C
Power dissipation
Ptot
500
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Top
- 55 to + 150
- 65 to + 175
+ 235
Tstg
Tsol
Tj
°C
°C
175
°C
Thermal resistance junction-case
BXY 44-T
Rth(j-c)
K/W
110
140
110
110
BXY 44-T1
BXY 44-T2
BXY 44-FP
Semiconductor Group
2
Draft A03 1998-04-01
BXY 44
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Reverse current 1
VR1 = 200 V
IR1
IR2
VF
-
-
100
nA
nA
V
Reverse current 2
VR2 = 100 V
-
-
-
5
Forward voltage
1.0
1.05
IF = 100 mA
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Total capacitance
VR = 50 V, f = 1 MHz
BXY 44-T, -T1, T2
BXY 44-FP
CT
pF
-
-
0.20
0.50
0.35
0.75
Forward resistance
f = 100 MHz, IF1 = 10 mA
BXY 44-T, -T1, T2
BXY 44-FP
RF1
RF2
RF3
tL
W
W
W
ns
800
700
900
900
1300
1200
Forward resistance
f = 100 MHz, IF2 = 1 mA
BXY 44-T, -T1, T2
BXY 44-FP
12
11
16
20
28
27
Forward resistance
f = 100 MHz, IF3 = 10 mA
BXY 44-T, -T1, T2
BXY 44-FP
2.0
2.0
3.0
3.8
5.0
5.0
Minority carrier lifetime
300
800
-
IF = 10 mA, IR = 6 mA, IR = 3 mA
Semiconductor Group
3
Draft A03 1998-04-01
BXY 44
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: QÉ
BXY44- (x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X162
BXY44-FP ES
For BXY44 in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
Ð HiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
Semiconductor Group
4
Draft A03 1998-04-01
BXY 44
Figure 1
Symbol
T Package
Millimetre
max.
min.
1.30
1.15
-
A
B
C
1.45
1.35
0.40
Semiconductor Group
5
Draft A03 1998-04-01
BXY 44
Figure 2
Symbol
T1 Package
Millimetre
max.
1.45
1.35
0.40
0.50
0.30
0.10
-
min.
1.30
1.15
-
A
B
C
D
E
F
0.10
-
0.06
5.50
0.40
G
H
0.60
Semiconductor Group
6
Draft A03 1998-04-01
BXY 44
Figure 3
Symbol
T2 Package
Millimetre
max.
1.45
min.
1.3
ÆA
ÆB
C
2.0
2.20
0.6
1.25
D
0.08
0.20
Semiconductor Group
7
Draft A03 1998-04-01
BXY 44
Figure 4
Symbol
FP Package
Millimetre
max.
3.55
3.30
1.70
0.65
0.15
0.40
2.60
-
min.
3.10
3.00
1.30
0.55
0.10
0.25
2.40
5.50
B
B1
D
D1
d
d1
F
L
Semiconductor Group
8
Draft A03 1998-04-01
相关型号：
©2020 ICPDF网 联系我们和版权申明