BYP100 [INFINEON]
FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics); FRED二极管（快恢复二极管外延软恢复特性）
| 型号： | BYP100 |
| 厂家： | 
Infineon |
| 描述： | FRED Diode (Fast recovery epitaxial diode Soft recovery characteristics) |
| 文件： | 总2页 (文件大小：24K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BYP 100
Preliminary data
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
Type
V
I
t
rr
Package
Ordering Code
C67047-A2254-A2
RRM
FRMS
BYP 100
1000V
8A
55ns
TO-218 AD
Maximum Ratings
Parameter
Symbol
Values
Unit
Mean forward current
I
A
FAV
T = 90 °C, D = 0.5
5
8
C
RMS forward current
I
I
FRMS
FSM
Surge forward current, sine halfwave, aperiodic
T = 100 °C, f = 50 Hz
20
50
j
Repetitive peak forward current
I
FRM
T = 100 °C, t ≤ 10 µs
j
p
2
2
2
∫
i t value
i dt
A s
T = 100 °C, t = 10 ms
2
j
p
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation
V
V
P
1000
1000
V
RRM
RSM
tot
W
T = 90 °C
15
C
Chip or operating temperature
Storage temperature
T
-40 ... + 150 °C
-40 ... + 150
j
T
stg
≤
≤
Thermal resistance, chip case
R
R
-
9.8
46
K/W
-
thJC
Thermal resistance, chip-ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
thJA
E
-
40 / 150 / 56
Semiconductor Group
1
09.96
BYP 100
Preliminary data
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Forward voltage drop
V
V
F
I = 5 A, T = 25 °C
-
-
2
2.45
F
j
I = 5 A, T = 100 °C
1.7
-
F
j
Reverse current
V = 1000 V, T = 25 °C
I
mA
R
-
-
-
0.01
0.05
0.15
0.25
R
j
V = 1000 V, T = 100 °C
-
R
j
V = 1000 V, T = 150 °C
-
R
j
AC Characteristics
Reverse recovery charge
Q
µC
A
rr
RRM
rr
I = 5 A, V
= 300 V, di /dt = -800 A/µs
F
F
CC
T = 100 °C
-
-
-
-
-
0.8
22
1.5
j
Peak reverse recovery current
I = 5 A, V
= 300 V, di /dt = -800 A/µs
I
t
t
F
CC
F
T = 100 °C
-
j
Reverse recovery time
I = 5 A, V
= 300 V, di /dt = -800 A/µs
ns
F
CC
F
T = 100 °C
55
85
j
Storage time
S
I = 5 A, V
= 300 V, di /dt = -800 A/µs
F
F
CC
T = 100 °C
30
-
-
j
Softfaktor
S
-
I = 5 A, V
= 300 V, di /dt = -800 A/µs
F
F
CC
T = 100 °C
0.8
j
Semiconductor Group
2
09.96
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