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C67076-S1013-A2

更新时间：2024-09-18 02:21:32
品牌：INFINEON
描述：SIMOPAC Module (Power module Single switch N channel Enhancement mode)

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C67076-S1013-A2 概述

SIMOPAC Module (Power module Single switch N channel Enhancement mode) SIMOPAC模块（电源模块，单开关N沟道增强模式）

C67076-S1013-A2 数据手册

通过下载C67076-S1013-A2数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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SIMOPAC® Module  
BSM 111 AR  
VDS  
I D  
= 100 V  
= 200 A  
R DS(on) = 8.5 mΩ  
● Power module  
● Single switch  
● N channel  
● Enhancement mode  
● Package with insulated metal base plate  
● Package outline/Circuit diagram: 11)  
Type  
Ordering Code  
BSM 111 AR  
C67076-S1013-A2  
Maximum Ratings  
Parameter  
Symbol  
VDS  
Values  
100  
Unit  
Drain-source voltage  
V
Drain-gate voltage, RGS = 20 kΩ  
Gate-source voltage  
VDGR  
VGS  
100  
± 20  
Continuous drain current, TC = 25 ˚C  
Pulsed drain current, TC = 25 ˚C  
Operating and storage temperature range  
Power dissipation, TC = 25 ˚C  
ID  
200  
A
ID puls  
Tj, Tstg  
Ptot  
600  
– 55 … + 150  
700  
˚C  
W
Thermal resistance  
Chip-case  
RthJC  
≤ 0.18  
K/W  
Insulation test voltage2), t = 1 min.  
Creepage distance, drain-source  
Clearance, drain-source  
Vis  
–
2500  
Vac  
16  
mm  
–
11  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
–
F
–
–
55/150/56  
1)  
See chapter Package Outline and Circuit Diagrams.  
Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with  
DIN 50 014, IEC 146, para. 492.1.  
2)  
Semiconductor Group  
24  
03.96  
BSM 111 AR  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Drain-source breakdown voltage  
VGS = 0, ID = 0.25 mA  
V(BR)DSS  
VGS(th)  
IDSS  
V
100  
2.1  
–
–
Gate threshold voltage  
VDS = VGS, ID = 1 mA  
3.0  
4.0  
Zero gate voltage drain current  
VDS = 100 V, VGS = 0  
Tj = 25 ˚C  
µA  
–
–
50  
300  
250  
1000  
Tj = 125 ˚C  
Gate-source leakage current  
IGS  
nA  
V
GS = 20 V, VDS = 0  
Drain-source on-state resistance  
GS = 10 V, ID = 130 A  
–
–
10  
7
100  
RDS(on)  
mΩ  
V
8.5  
Dynamic Characteristics  
Forward transconductance  
VDS ≥ 2 × ID × RDS(on) max., ID = 130 A  
gfs  
60  
–
75  
10  
5
–
S
Input capacitance  
Ciss  
13  
7.5  
2.7  
nF  
V
GS = 0, VDS = 25 V, f = 1 MHz  
Output capacitance  
GS = 0 , VDS = 25 V, f = 1 MHz  
Reverse transfer capacitance  
GS = 0, VDS = 25 V, f = 1 MHz  
Turn-on time ton (ton = td (on) + tr)  
CC = 50 V, VGS = 10 V  
C
oss  
–
V
C
rss  
–
1.8  
V
–
–
280  
220  
–
–
ns  
td (on)  
tr  
V
ID = 130 A, RGS = 3.3 Ω  
Turn-off time toff (toff = td (off) + tf)  
–
–
220  
60  
–
–
td (off)  
tf  
V
CC = 50 V, VGS = 10 V  
ID = 130 A, RGS = 3.3 Ω  
Semiconductor Group  
25  
BSM 111 AR  
Electrical Characteristics (cont’d)  
at T = 25 ˚C, unless otherwise specified.  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse diode  
Continuous reverse drain current  
IS  
A
TC = 25 ˚C  
–
–
–
–
–
–
200  
Pulsed reverse drain current  
TC = 25 ˚C  
ISM  
VSD  
trr  
–
600  
Diode forward on-voltage  
IF = 400 A , VGS = 0  
V
1.25  
400  
3.5  
1.6  
Reverse recovery time  
IF = IS, diF/dt = 100 A/ µs, VR = 30 V  
ns  
–
Reverse recovery charge  
IF = IS, diF/dt = 100 A/ µs, VR = 30 V  
Qrr  
µC  
Semiconductor Group  
26  
BSM 111 AR  
Characteristics at Tj = 25 ˚C, unless otherwise specified.  
Power dissipation Ptot = f (TC)  
parameter: Tj = 150 ˚C  
Typ. output characteristics ID = f (VDS)  
parameter: = 80 µs pulse test  
Safe operating area ID = f (VDS)  
parameter: single pulse, TC = 25 ˚C  
Tj ≤ 150 ˚C  
Typ. transfer characteristic ID = f (VGS)  
parameter: = 80 µs pulse test, VDS = 25 V  
Semiconductor Group  
27  
BSM 111 AR  
Continuous drain-source current  
ID = f (TC),  
Drain-source breakdown voltage  
V(BR)DSS (Tj) = b × V(BR)DSS (25 ˚C)  
parameter: VGS ≥ 10 V, T j = 150 ˚C  
Drain source on-state resistance  
Typical capacitances C = f (VDS)  
parameter: VGS = 0, f =1 MHz  
R
DS(on) = f (Tj)  
parameter: ID = 130 A; VGS = 10 V (spread)  
Semiconductor Group  
28  
BSM 111 AR  
Forward characteristics of reverse diode  
IF = f (VSD)  
parameter: Tj, tp = 80 µs (spread)  
Semiconductor Group  
29  
BSM 111 AR  
Transient thermal impedance ZthJC = f (tp)  
parameter: D = tp/T  
Typ. gate charge VGS = f (QGate  
parameter: IDputs = 300 A  
)
Semiconductor Group  
30  

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