C67079-A1052-A8_技术文档

BRT 21, BRT 22, BRT 23

SITAC AC Switches

With Zero Voltage Switch

out Zer Voltage Switch

AC switch with zero-voltage detector

•

Electrically insulated between input and output circuit

Microcomputer-compatible by very low trigger current

UL-tested (file no. E 52744), code letter "J"

Available with the following options:

Option 1: VDE 0884-approved

Option 6: Pins in 10.16 mm spacing

Option 7: Pins for sourface mounting

Type

Opt.

V

DRM

I

FT

dv/dt

cr

Marking

Ordering Code

TRMS

-

400 V

300 mA 2 mA 10 kV/µs

300 mA 3 mA 10 kV/µs

300 mA 2 mA 10 kV/µs

300 mA 3 mA 10 kV/µs

BRT 21 H

BRT 22 H

BRT 22 M

BRT 23 H

BRT 23 M

BRT 21 H

BRT 22 H

BRT 22 M

BRT 23 H

BRT 23 M

C67079-A1020-A6

C67079-A1050-A16

C67079-A1021-A6

C67079-A1051-A5

C67079-A1051-A11

C67079-A1051-A16

C67079-A1051-A17

C67079-A1021-A10

C67079-A1051-A6

C67079-A1022-A6

C67079-A1052-A8

C67079-A1052-A11

C67079-A1052-A14

C67079-A1022-A10

1 + 6 400 V

-

600 V

1

7

1 + 6 600 V

1 + 7 600 V

-

600 V

800 V

1

-

6

7

1 + 6 800 V

-

800 V

Information

Package

Pin Configuration

4

1

2

3

5

6

Cathode

Anode Kathode not

50 pcs per tube P-DIP-6

A1

do not

connect

A2

connected

Semiconductor Group

1

12.96

BRT 21, BRT 22, BRT 23

T

j

Maximum Ratings, at Tj = 25 °C, unless otherwise specified.

AC Switch

Parameter

Symbol

Value

Unit

mW

°C

Max. Power dissipation

P

630

tot

Chip or operating temperature

Storage temperature

T

j

-40 ...+ 100

-40 ...+ 150

T

stg

Insulation test voltage ¹⁾

between input/output circuit

(climate in acc. with DIN 40046, part2, Nov.74)

V

5300

IS

RMS

Reference voltage in acc. with VDE 0110 b

(insulation group C)

V

500

600

V

ref

RMS

DC

Creepage tracking resistance

C

R

(group IIIa

acc. to DIN

VDE 0109)

175

TI

is

(in acc. with DIN IEC 112/VDE 0303, part 1)

Insulation resistance

Ω

12

V

= 500 V, T = 25 °C

≥

IO

A

10

11

= 500 V, T = 100 °C

≥

IO

A

10

DIN humidity category, DIN 40 040

Creepage distance (input/output circuit)

Clearance (input/output circuit)

F

-

≥ 7.2

mm

≥

7.2

Input Circuit

Parameter

Symbol

Value

6

Unit

V

Param VR

V

R

Continuous forward current

Surge forward current,

I

20

mA

A

F

I

1.5

30

FSM(I)

, t ≤ 10 µs

Max. power dissipation t

µ

P

mW

tot

Output Circuit

Parameter

Symbol BRT BRT BRT Unit

21 22 23

Repetitive peak off-state voltage

RMS on-state current

V

I

400 600 800

300

V

DRM

mA

A

TRMS

Single cycle surge current (50 Hz)

Max. power dissipation

I

TSM(I)

3

P

600

mW

tot

Semiconductor Group

2

12.96

BRT 21, BRT 22, BRT 23

Characteristics

at TTj = 25 °C, unless otherwise specified.

j

Input Circuit

Parameter

Symbol

Values

Unit

min. typ. max.

Forward Voltage,

V

-

1.1 1.35 V

F

I = 10 mA

F

Reverse current,

I

-

10 µA

R

V = 6 V

R

Thermal resistance ²⁾

junction - ambient

R

750 K/W

thJA

Output Circuit

Parameter

Symbol

Values

Unit

min. typ. max.

Critical rate of rise of off-state voltage

dv/dt

kV/µs

cr

V = 0.67 V

, T = 25 °C

10

5

-

j

D

DRM

V = 0.67 V

, T = 80 °C

j

D

Critical rate of rise of voltage at current

commutation

dv/dt

crq

nication

V = 0.67 VV

, TT ==2255°°CC,,ddii//ddtt ≤≤1155AA//mmss

10

5

-

D

DRM jj

DRM

crq

V

T = 80 °C, di/dt

≤

crq

V = 0.67 V

, T = 80 °C, di/dt ≤ 15 A/ms

j

D

DRM

D

Critical rate of rise of on-state current

Pulse current

di/dt

8

-

A/µs

A

cr

I

2

tp

t ≤≤5 µs, ff= 100 Hz,i di t/d≤t ≤ 8 A/ms

5 µs, = 100 , d /d 8 A/µs

p

tp

On-state voltage,

V

T

-

2.3 V

I = 300 mA

T

Off-state current

I

D

µA

T = 25 °C, V

-

7

30

100

C

DRM

T = 80 °C, V

12 1000

C

DRM

Holding current,

V = 10 V

I

H

-

80

500

D

Thermal resistance ²⁾

junction - ambient

R

thJA

-

125 K/W

Semiconductor Group

3

12.96

BRT 21, BRT 22, BRT 23

Response Characteristics

T

at = 25 °C, unless otherwise specified.

j

Parameter

Symbol

Values

Unit

min. typ. max.

I

Trigger current 1

mA

FT1

V

= 6 V

D

type H

type M

0.4

-

2

3

I

Trigger current 2

FT2

V

t

T

j

= 220 V, ƒ = 50 Hz, = 100°C

op

> 10 ms

pF

type H

type M

-

6

9

I

∆

T

∆

/

j

Trigger current temperature gradient

-

7

14 µA/K

FT1

I

∆

T

/∆

j

FT2

I

V

DINH

Inhibit voltage,

=

-

8

12

-

V

F

FT1

V

∆

I

Inhibit voltage temperature gradient

/

-20

mV/K

DINH

T

j

Off-state current in inhibit state

7-

-

50

-

200 µA

DINH

I

V

,

FT1 DRM

=

F

C

Capacitance between input and output circuit

2

pF

IO

V

f

= 0 V, = 1 kHz

R

1) Static air, SITAC soldered in pcb or base plate.

2) Test AC voltage in acc. with DIN 57883, June 1980.

3) The SITAC switch is soldered in pcb or base plate.

4) Termocouple measurement has to be performed potentially separated to A1 and A2.

The measuring junction should be as near as possible at the case.

T

5) The SITAC zero voltage switch can be triggered only in the hatched area below the curves.

j

Semiconductor Group

4

12.96

BRT 21, BRT 22, BRT 23

Characteristics

at Tj = 25 °C, unless otherwise specified.

T

j

Typical input characteristics

ƒ V

Typical output characteristics

I

ƒ V

= (

T

I

= (

)

T

F

I

T

I

T

= ƒ(

PIN5

Current reduction

= ƒ(

)

A

Current reduction

)

TRMS

4)

R

3)

R

= 125 K/W

= 16,5 K/W

thJA

thJ-PIN5

Semiconductor Group

5

12.96

BRT 21, BRT 22, BRT 23

t

f I I

= ( /

Typical trigger delay time

)

Power dissipation for 40 ... 60 Hz

line operation

gd

F FT25°C

V

= 200V

D

P

ƒ I

= (

)

TRMS

tot

5)

Typ.static inhibit voltage limit

I

ƒ I I

= ( /

Typ. inhibit current

)

DINH

F FT 25°C

V

ƒ I I

= ( /

T

),parameter:

j

DINHmin

F FT 25°C

V

= 800 V

D

Semiconductor Group

6

12.96


型号：	C67079-A1052-A8
厂家：	Infineon
描述：	SITACO AC Switches Without Zero Voltage Switch With Zero Voltage Switch SITACO AC开关无零电压开关零电压开关开关
文件：	总6页 (文件大小：350K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

C67079-A1052-A8 [INFINEON]

相关型号：

C671

C6713BZDPA200CIS

C672

C673

C674

C67401

C67401A

C67401AJ

C67401AN

C67401ANL

C67401J

C67401N