CF739 [INFINEON]
GaAs FET (N-channel dual-gate GaAs MES FET); 砷化镓场效应管（N沟道双栅极的GaAs MES FET）的
| 型号： | CF739 |
| 厂家： | 
Infineon |
| 描述： | GaAs FET (N-channel dual-gate GaAs MES FET) |
| 文件： | 总7页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs FET
CF 739
Features
● N-channel dual-gate GaAs MES FET
● Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF,
Sat-TV tuners
● Low noise
● High gain
● Low input capacitance
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
SOT-143
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
4
CF 739
MS
Q62702-F1215
S
D
G
2
G
1
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
V
DS
10
6
V
– VG1S
– VG2S
6
ID
80
1
mA
Gate 1-source peak current
Gate 2-source peak current
Total power dissipation, TS ≤ 66 ˚C2)
Channel temperature
Storage temperature range
+ IG1SM
+ IG2SM
1
P
tot
240
150
mW
˚C
T
ch
Tstg
– 55 … + 150
Thermal Resistance
Channel - soldering point3)
RthchS
≤ 350
K/W
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
3)
TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group
1
04.96
CF 739
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Drain-source breakdown voltage
ID = 100 µA, – VG1S = – VG2S = 4 V
V
(BR)DS
10
–
–
–
–
–
–
–
–
V
Gate 1 leakage current
– VG1S = 5 V, VG2S = VDS = 0
– IG1SS
– IG2SS
20
20
60
2.5
2.5
µA
Gate 2 leakage current
– VG2S = 5 V, VG1S = VDS = 0
–
Drain current
IDSS
6
mA
V
VG1S = 0, VG2S = 0, VDS = 3 V
Gate 1-source pinch-off voltage
= 200 µA
– VG1S(P)
– VG2S(P)
–
V
G2S = 0, VDS = 5 V, I
D
Gate 2-source pinch-off voltage
= 200 µA
–
V
G1S = 0, VDS = 5 V, I
D
AC Characteristics
Forward transconductance
g
fs
–
–
–
25
–
–
–
mS
pF
V
DS = 5 V, VG2S = 2 V, I
D
= 10 mA, f = 1 kHz
Gate 1 input capacitance
C
C
F
gfss
dss
0.95
0.5
V
G2S = 2 V, VDS = 5 V, I
D
D
= 10 mA, f = 1 MHz
= 10 mA, f = 1 MHz
Output capacitance
VG2S = 2 V, VDS = 5 V, I
Noise figure
dB
V
G2S = 2 V, VDS = 5 V, I
D
D
= 10 mA, f = 1.75 GHz
= 10 mA, f = 800 MHz
–
–
1.8
1.1
–
–
V
G2S = 2 V, VDS = 5 V, I
Power gain
Gps
V
G2S = 2 V, VDS = 5 V, I
D
D
= 10 mA, f = 1.75 GHz
= 10 mA, f = 800 MHz
–
–
17
22
–
–
V
G2S = 2 V, VDS = 5 V, I
Control range
∆ Gpsc
–
50
–
VG2S = 2 V … – 3 V
Semiconductor Group
2
CF 739
Total power dissipation Ptot = f (T
A
*; T
S
)
Output characteristics I = f (VDS)
D
*Package mounted on alumina
VG2S = 2 V
Gate 1 forward transconductance
Gate 1 forward transconductance
gfs1 = f (VG1S
)
gfs1 = f (VG2S)
V
DS = 5 V, f = 1 kHz
VDS = 5 V, f = 1 kHz
Semiconductor Group
3
CF 739
Drain current I
D
= f (VG1S
)
Drain current I = f (VG2S)
D
VDS = 5 V
VDS = 5 V
Gate 1 input transconductance
Output capacitance Cdss = f (VDS
)
C
g1ss = f (I
D)
V
G2S = 2 V, I
D
= 10 mA, f =0.1 – 1 GHz
VG2S = 2 V, VDS = 5 V, f =0.1 – 1 GHz
Semiconductor Group
4
CF 739
Common Source Admittance Parameters, G
2
RF grounded
Gate 1 forward transfer admittance y21s
= 10 mA
Gate 1 input admittance y11s
V
DS = 5 V, VG2S = 2 V, I
D
= 10 mA
V
DS = 5 V, VG2S = 2 V, I
D
Output admittance y22s
V
DS = 5 V, VG2S = 2 V, I = 10 mA
D
Semiconductor Group
5
CF 739
Common Source S-Parameters, G
2
RF grounded
f
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V
DS = 5 V, VG2S = 2 V, I
D
= 10 mA, Z
0
= 50 Ω
0.06
0.08
0.10
0.15
0.20
0.25
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.50
1.60
1.80
2.00
2.20
2.40
2.50
2.60
2.80
3.00
0.999
0.998
0.998
0.997
0.993
0.989
0.987
0.975
0.965
0.951
0.935
0.918
0.900
0.877
0.883
0.773
0.744
0.720
0.666
0.614
0.556
0.497
0.466
0.449
0.408
0.375
– 2.4 3.21
– 3.2 3.21
– 4.1 3.21
– 6.0 3.22
– 8.0 3.22
– 10.1 3.21
– 12.1 3.21
– 16.0 3.18
– 19.9 3.15
– 23.8 3.12
– 27.5 3.09
– 31.4 3.05
– 35.2 3.03
– 39.0 3.02
– 46.6 2.96
– 53.7 2.85
– 56.8 2.77
– 60.1 2.74
– 66.2 2.64
– 72.8 2.59
– 80.3 2.53
– 87.2 2.45
– 90.2 2.38
– 92.8 2.34
– 97.1 2.24
– 101.7 2.17
176.9
175.5
174.3
171.4
168.4
165.5
162.5
156.6
150.7
145.0
139.3
134.0
128.5
122.9
111.4
99.7
94.4
89.2
78.9
68.6
57.4
45.6
40.0
34.5
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.012
0.012
0.010
0.009
0.008
0.005
0.002
81.8
0.963
0.963
0.962
0.962
0.962
0.962
0.962
0.961
0.960
0.960
0.961
0.958
0.956
0.955
0.953
0.949
0.949
0.949
0.948
0.945
0.941
0.937
0.936
0.936
0.937
0.934
– 1.0
– 1.4
– 1.7
– 2.5
– 3.4
– 4.3
– 5.2
– 6.8
– 8.5
– 10.3
– 12.0
– 13.7
– 15.4
– 17.0
– 20.6
– 24.3
– 26.2
– 27.9
– 31.5
– 35.3
– 39.4
– 44.4
– 47.0
– 49.6
– 54.6
– 59.1
85.8
90.8
84.2
88.1
84.4
83.3
79.6
78.6
78.0
76.6
73.3
70.4
69.5
66.4
59.9
59.9
57.5
54.1
49.2
43.7
39.4
35.2
32.2
25.1
– 25.0
23.6
12.2
Semiconductor Group
6
CF 739
S11, S22 = f (f), Z-plane
V
DS = 5 V,VG2S = 2 V,I
D
= 10 mA,Z = 50 Ω
0
S12, S21 = f (f)
V
DS = 5 V,VG2S = 2 V,I
D
= 10 mA,Z = 50 Ω
0
Semiconductor Group
7
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